Patterns and levels of PCDD/F in a Chinese graphite electrode sludge

The graphite electrode sludge was sampled from a huge chloralkali plant in central China. The total level of PCDD/F was found as high as 378.85 mu g/kg sludge (dry weight). The patterns of PCDD/F in each homologue indicated the predominance of tetra- to octa-chlorinated PCDFs, Furthermore, the toxic 2,3,7,8-substituted PCDFs constituted over 80% of the total PCDFs in the sludge and the corresponding PCDDs were only at 15 mu g/kg level. The calculated value of the international toxic equivalence (I-TEQ) in sludge was 21.65 mu g/kg sludge (dry weight). This typical "dioxin chloralkali pattern" was apparently identified in the sediments near the effluent outlet of the chloralkali plant.

Influence of ZnS and MgO Shell on the Photoluminescence Properties of ZnO Core/Shell Nanowire

Chinese Academy of Sciences；National Science Fund for Distinguished Young Scholar 60925016；National High Technology Research and Development program of China 2009AA034101；Postdoctoral Foundation 0971050000

Synthesis and luminescence of ZnMgS : Mn2+ nanoparticles

Efficient green emission from ZnMgS:Mn2+ nanoparticles prepared by co-doping Mg2+ and Mn2+ ions into ZnS lattices has been observed. The synthesis is carried out in aqueous solution, followed by a post-annealing process, thus showing the features of less complexity, low cost, and easy incorporation of dopants. In comparison with the emission of ZnS:Mn2+ nanoparticles, which is located generally around 590 nm, the photoluminescence of ZnMgS:Mn2+ nanoparticles is blue-shifted by 14 nm in wavelength, leading to the enhanced green emission. The X-ray diffraction, electron spin resonance, and pressure dependent photoluminescence measurements suggest that the change of the crystal field caused by Mg2+ ionic doping and the lower symmetry in the nanoparticles may account for the blue-shift of the photoluminescence. The ZnMgS:Mn2+ nanoparticles with 1% Mn2+ doping exhibit the strongest luminescence, which could potentially meet the requirements for the construction of green light emitting diodes.

The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates

AlN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.

A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate

Contactless electroreflectance (CER) and photoreflectance (PR) measurements have been performed on samples with the structure of an n-doped GaAs epitaxial layer on a semi- insulating GaAs substrate. Modulated reflectance signals from the n-GaAs surface and those from the n-GaAs/SI-GaAs interface are superposed in PR spectra. For the case of CER measurement, however, Franz-Keldysh oscillations (FKOs) from the interface, which are observed in PR spectra, cannot be detected. This discrepancy is attributed to different modulation mechanisms of CER and PR. In CER experiments, the electric field modulation cannot be added to the interfacial electric field because of the effective screening by the fast response of carriers across the interface. FKOs from the interface without any perturbation by the surface signals are extracted by subtracting CER spectra from PR spectra.

Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

The effect of using an indium flux during the MBE growth of GaN layers was investigated. The properties of these layers were studied using electron probe microanalysis, secondary ion mass spectroscopy, photoluminescence and cathodoluminescence. The optical properties of the GaN layers are shown to improve as compared with undoped GaN layers grown under nominally the same conditions but without an additional indium flux.

A Smart Frequency Presetting Technique for Fast Lock-in LC-PLL Frequency Synthesizer

This paper proposes a smart frequency presetting technique for fast lock-in LC-PLL frequency synthesizer. The technique accurately presets the frequency of VCO with small initial frequency error and greatly reduces the lock-in time. It can automatically compensate preset frequency variation with process and temperature. A 2.4GHz synthesizer with 1MHz reference input was implemented in 0.35 mu m CMOS process. The chip core area is 0.4mm(2). Output frequency of VCO ranges from 2390 to 2600MHz. The measured results show that the typical lock-in time is 3 mu s. The phase noise is -112dBc/Hz at 600KHz offset from center frequency. The test chip consumes current of 22mA that includes the consumption of the I/O buffers.

面向XML文档的细粒度强制访问控制模型

XML文档存放的信息需要受到访问控制策略的保护.现有的一些面向XML文档的访问控制模型都是基于自主访问控制策略或基于角色的访问控制.高安全等级系统需要强制访问控制来保证系统内信息的安全.首先扩展了XML文档模型使其包含标签信息,并给出了扩展后的文档模型需要满足的规则.然后通过讨论XML文档上的4种操作,描述了面向XML文档的细粒度强制访问控制模型的详细内容.该模型基于XML模式技术,它的控制粒度可以达到文档中的元素或者属性.最后讨论了该模型的体系结构和一些实现机制。

面向有差异群体的联合决策方案

公平性、透明性是联合决策的基本安全需求.结合多机构商务合作背景,利用具有同态性质的Paillier公钥密码系统和门限密码技术,提出了面向有差异群体的联合决策策略与方案,并对其安全性进行了分析和证明.

SOA-based actively mode-locked fiber ring laser by forward injecting an external pulse train

An actively mode-locked fiber ring laser based on cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA) is demonstrated to operate stably with a simple configuration. By forward injecting an easily-generated external pulse train, the mode-locked fiber laser can generate an optical-pulse sequence with pulsewidth about 6 ps and average output power about 7.9 mW. The output pulses show an ultra-low RMS jitter about 70.7 fs measured by a RF spectrum analyzer. The use of the proposed forward-injection configuration can realize the repetition-rate tunability from I to 15 GHz for the generated optical-pulse sequences. By employing a wavelength-tunable optical band-pass filter in the laser cavity, the operation wavelength of the designed SOA-based actively mode-locked fiber laser can be tuned continuously in a wide span between 1528 and 1565 nm. The parameters of external-injection optical pulses are studied experimentally to optimize the mode-locked fiber laser. (C) 2009 Elsevier B.V. All rights reserved.

稳定可调谐的单纵模多环形腔掺铒光纤激光器

提出了一种多环形腔(MRC)结构的稳定可调的单纵模(SLM)掺铒光纤激光器,多环形腔结构由双环形有源腔和两个次级无源腔组成。这种激光器是利用光纤法布里-珀罗可调滤波器(FFP-TF)以及光学光栅滤波器(OGF)两种滤波器和多环形腔结构相结合来共同选模。可实现波长调节范围为1528～1565 nm,在整个波长调节范围内边模抑制比大于44.53 dB,在1554 nm附近边模抑制比可以达到最大值51.18 dB, 输出功率为-8.84 dBm,通过应用多环型腔结构,激光器的输出很稳定,在18 min的观察时间内,中心波长的变化小于0.02 nm,输出功率的变化小于0.04 dBm,实现了稳定且可调谐的单纵模输出。

CMOS超高频整流器

提出了一个适用于无源UHF RFID标签芯片的全CMOS整流器.整流器包括射频-直流转换电路、偏置电路、直流-直流转换电路和振荡器电路.整流器的工作频率范围是860～960 MHz.基于0.18μm,1p6m的标准数字CMOS工艺,设计并实现了无源UHF RFID标签芯片的整流器.该设计采用开关电容电路技术动态地消除了CMOS管开启电压的问题,在标准数字CMOS工艺下实现了高效率的超高频整流器.整流器的面积为180μm×140μm.当输入900MHz,-16dBm的射频信号时,整流器的输出电压为1.2V,启动时间为980μs.