Principle of the moving-mirror-pair interferometer and the tilt tolerance of the double moving mirror

A novel type of interferometer, the moving-mirror-pair interferometer, is presented, and its principle and properties are studied. The new interferometer is built with three flat mirrors, which include two flat moving mirrors fixed as a single moving part by a rigid structure and one flat fixed mirror. The optical path difference (OPD) is obtained by the straight reciprocating motion of the double moving mirror, and the OPD value is four times the physical shift value of the double moving mirror. The tilt tolerance of the double moving mirror of the novel interferometer is systematically analyzed by means of modulation depth and phase error. Where the square aperture is concerned, the formulas of the tilt tolerance were derived. Due to the novel interferometer's large OPD value and low cost, it is very applicable to the high-spectral-resolution Fourier-transform spectrometers for any wavenumber region from the far infrared to the ultraviolet. (C) 2008 Optical Society of America.

A theoretical model for the tilt of the GaAs/Si epilayers

The crystallographic tilt of the epilayers with respect to their substrates has been observed in many heteroepitaxial systems. Many models have been proposed to explain this phenomenon, but none of them is suitable for the large mismatched system, such as GaAs/Si. Here a new model is proposed for GaAs/Si epilayers, which can also be used in other large mismatched systems. The magnitude of the tilt calculated from this model coincide well with the experimental results. Especially, this model can correctly predict the tilt direction of the GaAs/Si epilayers.

Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask

We proposed a new method to suppress the crystallographic tilt in the lateral epitaxial overgrowth of GaN by using an oxide mask with a newly designed pattern. A rhombus mask with edges oriented in the direction of <10 - 10>(GaN) was used instead of the traditional stripe mask. The morphology evolution during the LEO GaN with the rhombus mask was investigated by SEM, and the crystallographic tilt in the LEO GaN was measured by DC-XRD. It is found that using the new rhombus mask can decrease the crystallographic tilt in the LEO GaN. In addition, this method makes the ELO GaN stripes easy to coalesce. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sensitivity of the Australian summer monsoon to tilt and precession forcing

IEECAS SKLLQG

Temperature phase tilt in unstable baroclinic waves

A general property on the phase relation in linear baroclinic instability is proved analytically: in a potential vorticity homogenization regime, the complex geometry of the quasigeostrophic equations determines that the phase lines of temperature and pressure disturbances tilt with height in opposite directions.