上海曹扬环浜污染水体的生态修复

曹扬环浜是一条环形封闭水道,水质低于地表水V类标准,水体处于严重超富营养化水平,全浜暴发蓝藻水华现象。在采用截污、造流、生态恢复等生态工程措施综合治理后,随着健康水生态系统的建立,河浜水质逐步变好(由劣V类改善为接近Ⅲ类标准),水体透明见底,沉水植物覆盖率达70%~90%,水体一直维持“清水草型稳态”。重点介绍了河道治理中采用的生态修复措施及其作用,并从截污、营养盐、水生生物等方面分析了各项工程措施对抑制藻类生长、水质改善的影响,对我国城市小型河道的综合治理有很好的借鉴作用。

长江水系草鱼遗传多样性的微卫星DNA分析

利用已发表的鲤微卫星引物在草鱼中进行PCR扩增 ,结果有 5对引物 (6个座位 )能成功扩增并且有较高多态性 ,等位基因数在 3— 7个之间。这些异种扩增的草鱼微卫星符合孟德尔遗传规律。测序证明草鱼中的微卫星核心重复序列部分与鲤中的原始核心序列相似 ,也有一些变化。随后用这 6个多态微卫星座位研究了来自长江水系的四个草鱼群体的遗传结构 ,结果显示每个群体的平均等位基因数在 3 8与 4 8之间 ,平均观测杂合度 (Ho)在0 4 0 0 0与 0 5 74 1之间 ,平均期望杂合度 (HE)在 0 4 7

A photonic crystal waveguide with silicon on insulator in the near-infrared band

A two-dimensional (2D) photonic crystal waveguide in the Gamma-K direction with triangular lattice on a silicon-on insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.

基于收益机制发布/订阅系统时间约束保障技术

发布／订阅系统技术具有异步、松散耦合和多对多通信的特点，有着广阔的应用前景．但是，已有的发布／订阅系统技术不能满足动态环境下有延迟需求的应用要求．针对时间约束问题，扩展了发布／订阅系统的语法，建立了延迟模型，提出了一种基于收益机制的分布式发布／订阅系统时间约束保障技术和使系统获益最大化的调度算法MTEP（maximumto tal earning priority），其特点是能够满足订阅者和发布者指定延迟约束的需求，通过与订阅者商定的价格和违约成本信息来有效地利用网络带宽，适应网络环境的动态变化．实验结果表明，该调度策略和FCFS（first come first service）、最短时间优先和固定优先级等传统策略相比，可使订阅者接收到的有效事件明显增多，并使系统收益显著改善．

Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2)

Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p(+)-n-n(+)) induced by very high fluence neutron (VHFN) irradiation (1.7x10(15) n/cm(2)). As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels (E(t) < 0.33 eV) are in the order of 10(13)cm(-3), while those for relatively deep levels (E(t) > 0.33 eV) are in the order of 10(14) cm(-3). TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N-eff) in the order of 2x10(14) cm(-3). Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.