Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment

We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3](2-) defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3](2-) is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000 degrees C annealing, [-SiO3](2-) defects still exist in the films.

Spin precession and electron spin polarization wave in [001]-grown quantum wells

We theoretically study the spatial behaviors of spin precessions modulated by an effective magnetic field in a two-dimensional electron system with spin-orbit interaction. Through analysis of interaction between the spin and the effective magnetic field, we find some laws of spin precession in the system, by which we explain some previous phenomena of spin precession, and predict a controllable electron spin polarization wave in [001]-grown quantum wells. The shape of the wave, like water wave, mostly are ellipse-like or circle-like, and the wavelength is anisotropic in the quantum wells with two unequal coupling strengths of the Rashba and Dresselhaus interactions, and is isotropic in the quantum wells with only one spin orbit interaction.

Electron spin quantum beats and room temperature g factor in GaAsN

We report on the investigation of electron spin quantum beats at room temperature in GaAsN thin films by time-resolved Kerr rotation technique. The measurement of the quantum beats, which originate from the Larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. We show that the g factor of GaAs1-xNx thin films is significantly changed by the introduction of a small nitrogen fraction.

Electron spin relaxation by nuclei and holes in single InAs quantum dots

Electron spin relaxation of charged excitons X+ and X2+ are investigated by time-resolved and polarization-resolved photoluminescence spectroscopy. For X+ configuration, the electron spin relaxation shows a typical decay curve induced by hyperfine interaction with nuclei, whereas for X2+ state the electron spin relaxation is affected not only by nuclei but also by electron-hole exchange interaction, leading to a power-law time dependence.

Optical manipulation of single electron spin in doped and undoped quantum dots

The optical manipulation of electron spins is of great benefit to solid-state quantum information processing. In this letter, we provide a comparative study on the ultrafast optical manipulation of single electron spin in the doped and undoped quantum dots. The study indicates that the experimental breakthrough can be preliminarily made in the undoped quantum dots, because of the relatively less demand.

Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices

The paper reports a method of depositing SiO2, SiNx, a:Si, Si3N4 and SiOxNy dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ECR CVD) on InP, InGaAs and other compound semiconductor optoelectronic devices,and give a technology of depositing dielectric thin films and optical coatings by ECR CVD on Laser's Bars. The experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property,optical properties and the other properties. In addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implatation masks in the paper. In the finally, the dielectric film refractive index can be accurately controlled by the N-2/O-2/Ar gas flow rate.

Electron spin dynamics in heavily Mn-doped (Ga,Mn)As

Electron spin relaxation and related mechanisms in heavily Mn-doped (Ga,Mn) As are studied by performing time-resolved magneto-optical Kerr effect measurements. At low temperature, s-d exchange scattering dominates electron spin relaxation, whereas the Bir-Aronov-Pikus mechanism and Mn impurity scattering play important roles at high temperature. The temperature-dependent spin relaxation time exhibits an anomaly around the Curie temperature (T(c)) that implies that thermal fluctuation is suppressed by short-range correlated spin fluctuation above T(c). (C) 2010 American Institute of Physics. [doi:10.1063/1.3531754]

36-segmented high magnetic field hexapole magnets for electron cyclotron resonance ion source

Two high magnetic field hexapoles for electron cyclotron resonance ion source (ECRIS) have successfully fabricated to provide sufficient radial magnetic confinement to the ECR plasma. The highest magnetic field at the inner pole tip of one of the magnets exceeds 1.5 T, with the inner diameter (i.d.)=74 mm. The other hexapole magnet provides more than 1.35 T magnetic field at the inner pole tip, and the i.d. is 84 mm. In this article, we discuss the necessity to have a good radial magnetic field confinement and the importance of a Halbach hexapole to a high performance ECRIS. The way to design a high magnetic field Halbach structure hexapole and one possible solution to the self-demagnetization problem are both discussed. Based on the above discussions, two high magnetic field hexapoles have been fabricated to be utilized on two high performance ECRISs in Lanzhou. The preliminary results obtained from the two ECR ion sources are given

Experiments and modification on electron cyclotron resonance ion sources at the Institute of Modern Physics

Uranium ion beams were produced from electron cyclotron resonance (ECR) ion sources by sputtering method this year at the Institute of Modern Physics. At first, we chose the Lanzhou ECR No. 3 ion source to implement the production experiment of U ion beams. Finally, 11 e mu A of U28+, 5 e mu A of U32+, and 1.5 e mu A of U35+ were obtained. A U26+ ion beam produced by the LECR2 ion source was accelerated successfully by the cyclotron. This means that the Heavy Ion Research Facility in Lanzhou (HIRFL) has accomplished the acceleration of the ion beam of the heaviest element according to the designed parameters. The Lanzhou ECR ion source No. 2 (LECR2), which was built in 1997, has served the HIRFL for eight years and needed to be upgraded to provide more intense high charge state ion beams for HIRFL cooling storage ring. We started the upgrading project of LECR2 last year, and the modified design just has been finished. (c) 2006 American Institute of Physics.

Advanced superconducting electron cyclotron resonance ion source SECRAL: Design, construction, and the first test result

Superconducting electron cyclotron resonance (ECR) ion source with advanced design in Lanzhou (SECRAL) is a next generation ECR ion source and aims for developing a very compact superconducting ECR ion source with a structure and high performances for highly charged ion-beam production. The ion source was designed to be operated at 18 GHz at initial operation and finally will be extended to 28 GHz. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. At full excitation, this magnet assembly can produce peak mirror fields on the axis of 3.6 T at injection, 2.2 T at extraction, and a radial sextupole field of 2.0 T at plasma chamber wall. What is different from the traditional design, such as LBNL VENUS and LNS SERSE, is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. SECRAL may open the way for building a compact and high-performance 18-28 GHz superconducting ECR ion source. Very preliminary commissioning results are promising. Detailed design, construction issues and very preliminary test results of the ion source at 18 GHz are presented.

Experimental study on the electric-sweep scanner and ion beam emittance of electron cyclotron resonance ion source

With a latest developed electric-sweep scanner system, we have done a lot of experiments for studying this scanner system and ion beam emittance of electron cyclotron resonance (ECR) ion source. The electric-sweep scanner system was installed on the beam line of Lanzhou electron resonance ion source No. 3 experimental platform of Institute of Modem Physics. The repetition experiments have proven that the system is a relatively dependable and reliable emittance scanner, and its experiment error is about 10%. We have studied the influences of the major parameters of ECR ion source on the extracted ion beam emittance. The typical results of the experiments and the conclusions are presented in this article.

Intense beam production of highly charged heavy ions by the superconducting electron cyclotron resonance ion source SECRAL (invited)

There has been increasing demand to provide higher beam intensity and high enough beam energy for heavy ion accelerator and some other applications, which has driven electron cyclotron resonance (ECR) ion source to produce higher charge state ions with higher beam intensity. One of development trends for highly charged ECR ion source is to build new generation ECR sources by utilization of superconducting magnet technology. SECRAL (superconducting ECR ion source with advanced design in Lanzhou) was successfully built to produce intense beams of highly charged ion for Heavy Ion Research Facility in Lanzhou (HIRFL). The ion source has been optimized to be operated at 28 GHz for its maximum performance. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. An innovative design of SECRAL is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. For 28 GHz operation, the magnet assembly can produce peak mirror fields on axis of 3.6 T at injection, 2.2 T at extraction, and a radial sextupole field of 2.0 T at plasma chamber wall. During the commissioning phase at 18 GHz with a stainless steel chamber, tests with various gases and some metals have been conducted with microwave power less than 3.5 kW by two 18 GHz rf generators. It demonstrates the performance is very promising. Some record ion beam intensities have been produced, for instance, 810 e mu A of O7+, 505 e mu A of Xe20+ 306 e mu A of Xe27+, and so on. The effect of the magnetic field configuration on the ion source performance has been studied experimentally. SECRAL has been put into operation to provide highly charged ion beams for HIRFL facility since May 2007.

New development of advanced superconducting electron cyclotron resonance ion source SECRAL (invited)

Superconducting electron cyclotron resonance ion source with advance design in Lanzhou (SECRAL) is an 18-28 GHz fully superconducting electron cyclotron resonance (ECR) ion source dedicated for highly charged heavy ion beam production. SECRAL, with an innovative superconducting magnet structure of solenoid-inside-sextupole and at lower frequency and lower rf power operation, may open a new way for developing compact and reliable high performance superconducting ECR ion source. One of the recent highlights achieved at SECRAL is that some new record beam currents for very high charge states were produced by 18 GHz or 18+14.5 GHz double frequency heating, such as 1 e mu A of Xe-129(43+), 22 e mu A of Bi-209(41+), and 1.5 e mu A of Bi-209(50+). To further enhance the performance of SECRAL, a 24 GHz/7 kW gyrotron microwave generator was installed and SECRAL was tested at 24 GHz. Some promising and exciting results at 24 GHz with new record highly charged ion beam intensities were produced, such as 455 e mu A of Xe-129(27+) and 152 e mu A of Xe-129(30+), although the commissioning time was limited within 3-4 weeks and rf power only 3-4 kW. Bremsstrahlung measurements at 24 GHz show that x-ray is much stronger with higher rf frequency, higher rf power. and higher minimum mirror magnetic field (minimum B). Preliminary emittance measurements indicate that SECRAL emittance at 24 GHz is slightly higher that at 18 GHz. SECRAL has been put into routine operation at 18 GHz for heavy ion research facility in Lanzhou (HIRFL) accelerator complex since May 2007. The total operation beam time from SECRAL for HIRFL accelerator has been more than 2000 h, and Xe-129(27+), Kr-78(19+), Bi-209(31+), and Ni-58(19+) beams were delivered. All of these new developments, the latest results, and long-term operation for the accelerator have again demonstrated that SECRAL is one of the best in the performance of ECR ion source for highly charged heavy ion beam production. Finally the future development of SECRAL will be presented.

Electron transfer between Eu3+ and Tb3+ in BaB4O7 matrix

The BaB4O7:Eu, Tb phosphors are first synthesized in air atmosphere. We investigate their luminescent properties, and find that europium(II) and europium(III) can coexist in the BaB4O7:Eu phosphor. We observed that the relative intensity of europium(II) is increased when terbium(III) is incorporated. The electron spin resonance (ESR) spectra are carried out. The intensity of ESR peaks corresponding to europium(II) is also increased when terbium(III) is increased, so the valency state of europium is influenced by terbium(III). We explain these phenomena by an electron transfer mechanism. (C) 1996 Academic Press, Inc.

ELECTRON-TRANSFER BETWEEN EU AND TB IN COMPLEX FLUORIDES

Europium (II) and europium (III) have been observed in MMgF(4):xEu, yTb (M=Ca, Sr, Ba) phosphors using their typical photoluminescence spectra when are synthesized in Ar or an Ar/H-2 stream. The valence state of Eu is influenced by terbium. It is notable that the intensities of the electron spin resonance peaks corresponding to Eu2+ change in a regular way when terbium ions are incorporated which can be explained by an electron transfer mechanism.