Attractor crisis and bursting in a fluid flow with two no-slip directions

Characteristic burtsing behavior is observed in a driven, two-dimensional viscous flow, confined to a square domain and subject to no-slip boundaries. Passing a critical parameter value, an existing chaotic attractor undergoes a crisis, after which the flow initially enters a transient bursting regime. Bursting is caused by ejections from and return to a limited subdomain of the phase space, whereas the precrisis chaotic set forms the asymptotic attractor of the flow. For increasing values of the control parameter the length of the bursting regime increases progressively. Passing another critical parameter value, a second crisis leads to the appearance of a secondary type of bursting, of very large dynamical range. Within the bursting regime the flow then switches in irregular intervals from the primary to the secondary type of bursting. Peak enstrophy levels for both types of bursting are associated to the collapse of a primary vortex into a quadrupolar state.

Stability and bifurcation behaviour of electrostatic torsional NEMS varactor influenced by dispersion forces

The influences of Casimir and van der Waals forces on the nano-electromechanical systems (NEMS) electrostatic torsional varactor are studied. A one degree of freedom, the torsional angle, is adopted, and the bifurcation behaviour of the NEMS torsional varactor is investigated. There are two bifurcation points, one of which is a Hopf bifurcation point and the other is an unstable saddle point. The phase portraits are also drawn, in which periodic orbits are around the Hopf bifurcation point, but the periodic orbit will break into a homoclinic orbit when meeting the unstable saddle point.

A delay model for noise-induced bi-directional switching

Many biological systems can switch between two distinct states. Once switched, the system remains stable for a period of time and may switch back to its original state. A gene network with bistability is usually required for the switching and stochastic effect in the gene expression may induce such switching. A typical bistable system allows one-directional switching, in which the switch from the low state to the high state or from the high state to the low state occurs under different conditions. It is usually difficult to enable bi-directional switching such that the two switches can occur under the same condition. Here, we present a model consisting of standard positive feedback loops and an extra negative feedback loop with a time delay to study its capability to produce bi-directional switching induced by noise. We find that the time delay in the negative feedback is critical for robust bi-directional switching and the length of delay affects its switching frequency.

Quantum computation based on a quantum switch in cavity QED

A feasible scheme for constructing quantum logic gates is proposed on the basis of quantum switches in cavity QED. It is shown that the light field which is fed into the cavity due to the passage of an atom in a certain state can be used to manipulate the conditioned quantum logical gate. In our scheme, the quantum information is encoded in the states of Rydberg atoms and the cavity mode is not used as logical qubits or as a communicating "bus"; thus, the effect of atomic spontaneous emission can be neglected and the strict requirements for the cavity can be relaxed.

Upper level and phase controlling group velocity in V-type system

With the external field coupling the two upper levels, we investigate the light pulse propagation properties with weak probe field in a V-type system. Due to the external upper level (UL) coupling field, the dispersion of the system has been influenced by the relative phase. It is shown that the UL field and the relative phase can be regarded as switches to manipulate light propagation between subluminal and superluminal. (c) 2007 Elsevier B.V. All rights reserved.

Routing scheme, permutation properties, and optical implementation of a four-shuffle-exchange-based Omega network

The routing scheme and some permutation properties of a four-shuffle-exchange-based Omega network are discussed. The corresponding optical setup, which is composed of 2-D phase spatial light modulators and calcite plates, is proposed and demonstrated through mapping the inputs to a 2-D array. Instead of one shuffle-exchange followed by one switching operation as in ordinary Omega networks, in our presented system, the shuffle interconnection embraced in the switches is accomplished simply by varying the switching structure of each stage. For the proposed polarization-optical modules, the system is compact in structure, efficient in performance, and insensitive to the environment. (C) 1997 Society of Photo-Optical Instrumentation Engineers.

Polarization analysis and experimental implementation of PLZT electro-optical switch using fiber Sagnac interferometers

The polarization characteristics of electro-optical (EO) switches using fiber Sagnac interferometer (FSI) structures are theoretically investigated. Analytical solutions of output fields are presented when the twists and birefringence in a Sagnac loop are considered. Numerical calculations show that the twists of fiber, the orientation of the inserted phase retarder, and the splitting ratio of the coupler will influence both the output intensity and the output polarization properties of the proposed switch. A polarization-independent EO switch based on a Sagnac interferometer and a PUT bar was experimentally implemented, which showed good coincidence with the analytical results. The experiment showed a switch with 22 dB extinction ratio and less than 31.1 ns switching time. (c) 2006 Optical Society of America.

基于双面反射镜的N×N光开关的特性分析和实验研究

报道了基于双面反射镜的N×N光开关器件。介绍了使用双面反射镜的2×2, 4×4光开关的集成光路设计和工作原理; 采用Benes网络, 以2×2和4×4光开关为基本单元的N×N光开关器件的整体结构, 并根据“一笔画”原理, 分析了4×4, 8×8和16×16光开关矩阵的可重排无阻塞特性和光开关矩阵的光路选择算法。最后, 基于2×2, 4×4光开关技术制备了16×16光开关矩阵。测试表明, 该器件具有良好的插入损耗、回波损耗、串扰和开关时间等性能, 从而验证了设计思想和工艺的可行性。在基于双面反射镜的光开关矩

单块晶体集成的N×N纵横开关网络及其控制算法

设计了一种单块晶体集成的n×n纵横开关(Crossbar)网络。通过综合考虑晶体的双折射和全内双反射现象,以及晶体的电光效应,将构成n×n纵横开关网络的所有单元器件都集成到一块具有电光效应的双折射晶体上。同时,给出了该网络的控制算法,通过对开关工作状态的控制,可以实现任意输入输出通道之间的无阻塞连接。这种单块晶体集成的纵横开关网络具有能量损耗低、无阻塞、易安装、抗干扰等优点,适合于全光网络发展的需要。

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.

Spectral anomalies of focused hollow Gaussian beams at the geometrical focal plane

On the basis of diffraction integral and the expansion of the hard-aperture function into a finite series of complex Gaussian functions, an approximate expression for spatially fully coherent polychromatic hollow Gaussian beams passing through aperture lens is obtained. Detailed numerical results indicate that remarkable spectral changes always occurs near the points where the field amplitude has zero value. The effects of truncation parameter, Fresnel number and the beam order on spectral shifts and spectral switches are investigated numerically. (C) 2008 Elsevier B.V. All rights reserved.

Effect of PbO on precipitation of laser-induced gold nanoparticles inside silicate glasses

We report on three-dimensional precipitation of Au nanoparticles in gold ions-doped silicate glasses by a femtosecond laser irradiation and further annealing. Experimental results show that PbO addition plays the double roles of inhibiting hole-trapped centers generation and promoting formation and growth of gold nanoparticles. Additionally, glass containing PbO shows an increased non-linear absorption after femtosecond laser irradiation and annealing. The observed phenomena are significant for applications such as fabrications of three-dimensional multi-colored images inside transparent materials and three-dimensional optical memory, and integrated micro-optical switches. (c) 2007 Elsevier B.V. All rights reserved.

Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network

We describe a reconfigurable binary-decision-diagram logic circuit based on Shannon's expansion of Boolean logic function and its graphical representation on a semiconductor nanowire network. The circuit is reconfigured by using programmable switches that electrically connect and disconnect a small number of branches. This circuit has a compact structure with a small number of devices compared with the conventional look-up table architecture. A variable Boolean logic circuit was fabricated on an etched GaAs nanowire network having hexagonal topology with Schottky wrap gates and SiN-based programmable switches, and its correct logic operation together with dynamic reconfiguration was demonstrated.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.

Carrier spin relaxation in (Ga, Mn) As at room temperature

In this paper, the excitation energy density dependence of carrier spin relaxation is studied at room temperature for the as-grown and annealed (Ga, Mn) As samples using femtosecond time-resolved pump-probe Kerr spectroscopy. It is found that spin relaxation lifetime of electrons lengthens with increasing excitation energy density for both samples, and the annealed ( Ga, Mn) As has shorter carrier recombination and electron spin relaxation lifetimes as well as larger Kerr rotation angle than the as-grown ( Ga. Mn) As under the same excitation condition. which shows that DP mechanism is dominant in the spin relaxation process for ( Ga, Mn)As at room temperature. The enhanced ultrafast Kerr effect in the annealed (Ga,Mn)As shows the potential application of the annealed ( Ga, Mn) As in ultrafast all-optical spin switches, and also provides a further evidence for the p-d exchange mechanism of the ferromagnetic origin of (Ga, Mn) As.