Gas transport properties of novel cardo poly(aryl ether ketone)s with pendant alkyl groups

Gas transport of hydrogen, oxygen, nitrogen, carbon dioxide, and methane in four cardo poly(aryl ether ketone)s containing different alkyl substituents on the phenyl ring has been examined from 30 to 100 degrees C. The permeability, diffusivity, solubility, and their temperature dependency were studied by correlations with gas shape, size, and critical temperature as well as polymeric structural factors including glass transition, secondary transition, cohesive energy density, and free volume. The bulky, stiff cardo and alkyl groups in tetramethyl-substituted TMPEK-C resulted in increased H-2 permeability (by 55%) and H-2/N-2 permselectivity (by 106%) relative to bisphenol A polysulfone (PSF). Moreover, the weak dependence of gas transport on temperature in TMPEK-C made it maintain high permselectivities (alpha(H2/N2) in 68.3 and alpha(O2/N2) in 5.71) up to 100 degrees C, exhibiting potential for high-temperature gas separation applications.

Transport property of polyaniline and its molecular weight dependence

The electrical conductivity of polyaniline doped with camphor sulfonic acid (PAn-CSA) was studied. The results indicate that there is a critical temperature (T-c) and the temperature dependence of PAn-CSA conductivity shows metallic and semiconductor characteristics above and below T-c, respectively. The higher the molecular weight of PAn, the lower the T-c. The conductivity was enhanced remarkably when PAn-CSA film was stretched, its room temperature conductivity is up to 750 S/cm when elogonation is 60%; however, T-c was independent of elongation.

Critical crystallization temperature for the occurrence of epitaxy between high-density polyethylene and isotactic polypropylene

The crystallization behavior of high-density polyethylene (HDPE) on highly oriented isotactic polypropylene (iPP) at elevated temperatures (e.g., from 125 to 128 degrees C), was studied using transmission electron microscopy and electron diffraction. The results show that epitaxial crystallization of HDPE on the highly oriented iPP substrates occurs only in a thin layer which is in direct contact with the iPP substrate, when the HDPE is crystallized from the melt on the oriented iPP substrates at 125 degrees C. The critical layer thickness of the epitaxially crystallized HDPE is not more than 30 nm when the HDPE is isothermally crystallized on the oriented iPP substrates at 125 degrees C. When the crystallization temperature is above 125 degrees C, the HDPE crystallizes in the form of crystalline aggregates and a few individual crystalline lamellae. But both the crystalline aggregates and the individual crystalline lamellae have no epitaxial orientation relationship with the iPP substrate. This means that there exists a critical crystallization temperature for the occurrence of epitaxial crystallization of HDPE on the melt-drawn oriented iPP substrates (i.e., 125 degrees C). (C) 1997 John Wiley & Sons, Inc.

Effect of temperature on dislocation emission from crack tip for BCC metal Mo

The effect of thermally activated energy on the dislocation emission from a crack tip in BCC metal Mo is simulated in this paper. Based on the correlative reference model on which the flexible displacement boundary scheme is introduced naturally, the simulation shows that as temperature increases the critical stress intensity factor for the first dislocation emission will decrease and the total number of emitted dislocations increase for the same external load. The dislocation velocity and extensive distance among partial dislocations are not sensitive to temperature. After a dislocation emission, two different deformation slates are observed, the stable and unstable deformation states. In the stable deformation slate, the nucleated dislocation will emit from the crack tip and piles up at a distance far away from the crack tip, after that the new dislocation can not be nucleated unless the external loading increases. In the unstable deformation state, a number of dislocations can be emitted from the crack lip continuously under the same external load.

Influence Of Free Surface Curvature Of A Liquid Layer On The Critical Marangoni Convection

The Pearson instability was suggested to discuss the onset of Marangoni convection in a liquid layer of large Prandtl number under an applied temperature difference perpendicular to the free surface in the microgravity environment. In this case, the temperature distribution on the curved free surface is nonuniform, and the thermocapillary convection is induced and coupled with the Marangoni convection. In the present paper the effect of volume ratio of the liquid layer on the critical Marangoni convection and the corresponding spatial variation of the convection structure in zero-gravity condition were numerically investigated by two-dimensional model. (C) 2008 Elsevier Ltd. All rights reserved.

Critical serrated flow features during nanoindentation in La-based bulk metallic glasses

La57.6Al17.5(Cu,Ni)(24.9) and La64Al14(Cu,Ni)(22) bulk metallic glasses (BMGs) were prepared by copper-mould casting method. Plastic deformation behavior of the two BMGs at various loading rates was studied by nanoindentation. The results showed that the La57.6Al17.5(Cu,Ni)(24.9) BMG with a glass transition temperature of 423 K exhibited prominent serrated flow at low loading rates, whereas less pronounced serrated flow at high rates during nanoindentation. In contrast, the La64Al14(Cu,Ni)(22) BMG with a glass transition temperature of 401 K exhibited prominent serrated flow at high loading rates. The different rate dependency of serrated flow in the two La-based BMGs is related to the different glass transition temperature, and consequently the degree of viscous flow during indentation at room temperature. A smoother flow occurs in the alloy with relatively lower glass transition temperature, due to the relaxation of stress concentration.

How to determine critical Marangoni number in half floating zone convection

In the present paper, the coordinated measurements of the temperature profile inside the liquid bridge and the boundary variation of Free surface, in addition to other quantities, were obtained in the same time for the half floating zone convection. The results show that the onset of free surface oscillation is earlier than the one of temperature oscillation during the increasing of applied temperature difference, and the critical Marangoni numbers, defined usually by temperature measurement, are larger than the one defined by free surface measurement, and the difference depends on the volume of liquid bridge. These results induce the question, ''How to determine experimentally the critical Marangoni number?'' Copyright (C) 1996 Elsevier Science Ltd.

Effects of high-frequency vibration on critical marangoni number

The influence of vibration on thermocapillary convection and critical Marangoni number in liquid bridge of half floating zone was discussed for the low frequency range 0.4-1.5 Hz and the intermediate frequency range 2.5-15 Hz in our previous papers. This paper extends the study to high frequency range 15-100Hz. This ground based experiment was completed on the deck of an electromagnetic vibration machine. The results of our experiment shows when the frequency of the applied acceleration is high enough, the amplitude of the time varying part of the temperature response is disappear and the shape of the free surface of the liquid bridge exhibits no fluctuations due to inertia. The critical Marangoni number which is defined to describe the transitions from a peroidical convection in response to vibration to an oscillatory convection due to internal instability is nearly the same as the critical Marangoni number for oscillatory flow in the absence of vibration.

Effects of g-jitter on the critical marangoni number

A half floating zone is fixed on a vibrational deck, which supports a periodical applied acceleration to simulate the effect of g-jitter. This paper deals with the effects of g-jitter on the fluid fields and the critical Marangoni number, which describes the transition from a forced oscillation of thermocapillary convection into an instability oscillatory convection in a liquid bridge of half floating zone with top rod heated. The responses of g-jitter field on the temperature profiles and flow pattern in the liquid bridge were obtained experimentally. The results indicated that the critical Marangoni number decreases with the increasing of g-jitter effect and is slightly smaller for higher frequency of g-jitter with fixed strength of applied gravity.

Temperature-Dependent Growth and Life Cycle of Nemoura sichuanensis (Plecoptera: Nemouridae) in a Chinese Mountain Stream

Plecoptera constitute a numerically and ecologically significant component in mountain streams all over the world, but little is known of their life cycles in Asia. The life cycle of Nemoura sichuanensis and its relationship to water temperature was investigated during a 4-year study in a headwater stream (known as the Jiuchong torrent) of the Xiangxi River in Central China. Size structure histograms suggest that the life cycle was univoltine, and the relationships between the growth of Nemoura sichuanensis, physiological time, and effective accumulated water temperature were described using logistic regressions. The growth pattern was generally similar within year classes but growth rates did vary between year-classes. Our field data suggest a critical thermal threshold for emergence in Nemoura sichuanensis, that was close to 9 degrees C. The total number of physiological days required for completing larval development was 250 days. The effective accumulated water temperature was 2500 degree-days in the field. Development during the life cycle increased somewhat linearly with the physiological time and the effective accumulated water temperature, but some non-linear relationships were best developed by logistic equations.

DTADH and quantum critical phenomena caused by anisotropy and external magnetic field for spin-1/2 Heisenberg diamond chains

Using the transfer matrix renormalization group (TMRG) method, we study the connection between the first derivative of the thermal average of driving-term Hamiltonian (DTADH) and the trace of quantum critical behaviors at finite temperatures. Connecting with the exact diagonalization method, we give the phase diagrams and analyze the properties of each phase for both the ferromagnetic and anti-ferromagnetic frustrated J(3) anisotropy diamond chain models. The finite-temperature scaling behaviors near the critical regions are also investigated. Further, we show the critical behaviors driven by external magnetic field, analyze the formation of the 1/3 magnetic plateau and the influence of different interactions on those critical points for both the ferrimagnetic and anti-ferromagnetic distorted diamond chains.

Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films

Ga1-xMnxAs films with exceptionally high saturation magnetizations of approximate to 100 emu/cm(3) corresponding to effective Mn concentrations of x(eff)approximate to 0.10 still have a Curie temperature T-C smaller than 195 K contradicting mean-field predictions. The analysis of the critical exponent beta of the remnant magnetization-beta = 0.407(5)-in the framework of the models for disordered/amorphous ferromagnets suggests that this limit on T-C is intrinsic and due to the short range of the ferromagnetic interactions resulting from the small mean-free path of the holes. This result questions the perspective of room-temperature ferromagnetism in highly doped GaMnAs.

High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs

In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mu m InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20 degrees C to 60 degrees C. The highest output power of 0.435mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed.

Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures

We report on optimizing the GaAs capping layer growth of 1.3 mu m InAs quantum dots (QDs) by a combined two-temperature and annealing process at low temperatures using metalorganic chemical vapor deposition. The initial part (tnm) of the capping layer is deposited at a low temperature of 500 degrees C, which is the same for the growth of both the QDs and a 5-nm-thick In0.15Ga0.85As strain-reducing capping layer on the QDs, while the remaining part is grown at a higher temperature of 560 degrees C after a rapid temperature rise and subsequent annealing period at this temperature. The capping layer is deposited at the low temperatures (<= 560 degrees C) to avoid postgrowth annealing effect that can blueshift the emission wavelength of the QDs. We demonstrate the existence of an optimum t (=5 nm) and a critical annealing time (>= 450s) during the capping, resulting in significantly enhanced photoluminescence from the QDs. This significant enhancement in photoluminescence is attributed to a dramatic reduction of defects due to the optimized capping growth. The technique reported here has important implications for realizing stacked 1.3 mu m InAs/GaAs QD lasers. (C) 2008 Elsevier B.V. All rights reserved.