Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering

Field emissions (FE) from La-doped zinc oxide (ZnO) films are both experimentally and theoretically investigated. Owing to the La-doped effect, the FE characteristic of ZnO films is remarkably enhanced compared with an undoped sample, and a startling low turn-on electric field of about 0.4 V/mu m (about 2.5 V/mu m for the undoped ZnO films) is obtained at an emission current density of 1 mu A/cm(2) and the stable current density reaches 1 mA/cm(2) at an applied field of about 2.1 V/mu m. A self-consistent theoretical analysis shows that the novel FE enhancement of the La-doped sample may be originated from its smaller work function. Due to the effect of doping with La, the Fermi energy level lifts, electrons which tunnelling from surface barrier are consumedly enhancing, and then leads to a huge change of field emission current. Interestingly, it suggests a new effective method to improve the FE properties of film materials.

Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers

Nano-crystalline Si/SiO2 multilayers were prepared by alternately changing the ultra-thin amorphous Si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. Well-defined periodic structures can be achieved with 2.5 nm thick SiO2 sublayers. It is shown that the size of formed nano-crystalline Si is about 3 nm. Room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. In order to improve the hole injection probability, p-i-n structures containing a nanocrystalline Si/SiO2 luminescent layer were designed and fabricated on different p-type substrates. It is found that the turn-on voltage of p-i-n structures is obviously reduced and the luminescence intensity increases by 50 times. It is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.

Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires

The alloy formation enthalpy and band structure of InGaN nanowires were studied by a combined approach of the valence-force field model, Monte Carlo simulation, and density-functional theory (DFT). For both random and ground-state structures of the coherent InGaN alloy, the nanowire configuration was found to be more favorable for the strain relaxation than the bulk alloy. We proposed an analytical formula for computing the band gap of any InGaN nanowires based on the results from the screened exchange hybrid DFT calculations, which in turn reveals a better band-gap tunability in ternary InGaN nanowires than the bulk alloy.

Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution electron microscope with a point resolution of 0.194 nm. The [110] high-resolution electron microscopic images that do not directly reflect the crystal structure were transformed into the structure map through image deconvolution. Based on this analysis, four types of misfit dislocations at the 3C-SiC/Si (001) interface were determined. In turn, the strain relaxation mechanism was clarified through the generation of grow-in perfect misfit dislocations (including 90 degrees Lomer dislocations and 60 degrees shuffle dislocations) and 90 partial dislocations associated with stacking faults. (C) 2009 American Institute of Physics. [doi:10.1063/1.3234380]

Magnetization of two-dimensional heavy holes with boundaries in a perpendicular magnetic field

The magnetisation of heavy holes in III-V semiconductor quantum wells with Rashba spin-orbit coupling (SOC) in an external perpendicular magnetic field is studied theoretically. We concentrate on the effects on the magnetisation induced by the system boundary, the Rashba SOC and the temperature. It is found that the sawtooth-like de Haas-van Alphen (dHvA) oscillations of the magnetisation will change dramatically in the presence of such three factors. Especially, the effects of the edge states and Rashba SOC on the magnetisation are more evident when the magnetic field is smaller. The oscillation center will shift when the boundary effect is considered and the Rashba SOC will bring beating patterns to the dHvA oscillations. These effects on the dHvA oscillations are preferably observed at low temperatures. With increasing temperature, the dHvA oscillations turn to be blurred and eventually disappear.

Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMA1 ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress. (C) 2004 Elsevier B.V. All rights reserved.

Interference and non-interference of sidebands in a quantum dot with oscillating levels

When a quantum dot is suffering an AC gate voltage, the sidebands turn up beside the static levels of the dot. We formularized the conductance and current when the effective coupling between levels in the quantum dot induced by the hybrid terms is included using a bi-unitary transform method, and we investigated the interference of the photon sidebands of deferent levels. The interference occurs if the same sidebands of deferent levels overlap, which is possible only when the static levels lie close to and overlap with each other. The overlap of different photon sidebands leads to a simple non-coherent superposition. (C) 2005 Elsevier Ltd. All rights reserved.

Current-voltage characteristics in strongly correlated double quantum dots

We have studied the current-voltage properties of a double quantum dot (DQD) connected by leads in arrangements that vary from series to symmetrical parallel configurations, in the presence of strong intradot Coulomb interaction. The influences of the connecting configurations and the difference between dot levels on the magnitude and symmetry of the total current are examined. We find that the connecting configurations of the dots can determine the number of the current paths and in turn determine the magnitude of the current, while the coupling strengths between the dots and the leads together with the difference of dot levels determine the current-voltage symmetry. The negative differential conductance observed in serial DQD can be explained in terms of the reduction of the current paths. (c) 2005 American Institute of Physics.

Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped GaAs/AlAs superlattice

A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage characteristics of a doped GaAs/AlAs superlattice in the transition process from static to dynamic electric-field domain formation caused by increasing the sample temperature. As the temperature increases, these dynamic dc voltage bands expand within each sawtooth-like branch, squeeze out the static regions, and join up together to turn the whole plateau into dynamic electric-field domain formation. These results are well explained by a general analysis of stability of the sequential tunneling current in superlattices. (C) 1999 American Institute of Physics. [S0003-6951(99)04443-5].

Temperature-induced turnover of the well and barrier layers in ZnSe/Zn0.84Mn0.16Se superlattices

Photoluminescence of ZnSe, Zn0.84Mn0.16Se alloy, and ZnSe/Zn0.84Mn0.16Se superlattice (SL) have been measured in the temperature range from 10 to 300 K. It is found that the band gap of the ZnSe was smaller than that of the Zn0.84Mn0.16Se alloy at 10 K, but larger than that of the alloy at 300 K. Then the well and barrier layers of the ZnSe/Zn0.84Mn0.16Se SL would be expected to turn over at about 180 K. This type of turn over was observed in the SL sample. The turn over took place at 80 K, somewhat lower than the expected temperature. A calculation including the strain in the ZnSe/Zn0.84Mn0.16Se SL indicates that the heavy-hole bands begin crossing at 75 K, which agrees well with experimental results. [S0163-1829(99)13127-8].

HIRFL-CSR commissioning in 2006 and 2007

HIRFL-CSR, a new heavy ion cooler-storage-ring system at IMP, had been in commissioning since the beginning of 2006. In the two years of 2006 and 2007 the CSR commissioning was finished, including the stripping injection (STI), electron-cooling with hollow electron beam, C-beam stacking with the combination of STI and e-cooling, the wide energy-range synchrotron ramping from 7 MeV/u to 1000 MeV/u by changing the RF harmonic-number at mid-energy, the multiple multi-turn injection (MMI), the beam accumulation with MMI and e-cooling for heavy-ion beams of Ar, Kr and Xe, the fast extraction from CSRm and single-turn injection to CSRe, beam stacking in CSRe and the RIBs mass-spectrometer test with the isochronous mode in CSRe by using the time-of-flight method.

Commissioning of electron cooling in CSRm

A new generation electron cooler has started operation in the heavy ion synchrotron CSRm which is used to increase the intensity of heavy ions. Transverse cooling of the ion beam after horizontal multi-turn injection allows beam accumulation at the injection energy. After optimization of the accumulation process an intensity increase in a synchrotron pulse by more than one order of magnitude has been achieved. In given accumulation time interval of 10 seconds, 108particles have been accumulated and accelerated to the final energy. The momentum spread after accumulation and acceleration in the 10−4 range has been demonstrated in six species of ion beams. Primary measurements of accumulation process varying with electron energy,electron beam current, electron beam profile, expansion factor and injection interval have been performed.The lifetimes of ion beams in the presence of electron beams were roughly measured with the help of DCCT signal.

Role of five-quark components in radiative and strong decays of the Lambda(1405) resonance

Within an extended chiral constituent quark model, the three- and five-quark structure of the S-01 resonance Lambda(1405) is investigated. Helicity amplitudes for electromagnetic decays [Lambda(1405)->Lambda(1116)gamma, Sigma(1194)gamma] and transition amplitudes for strong decays [Lambda(1405)->Sigma(1194)pi, K- p] are derived, as well as the relevant decay widths. The experimental value for the strong decay width, Gamma(Lambda(1405)->(Sigma pi)degrees) = 50 +/- 2MeV, is well reproduced with about 50% of a five-quark admixture in the Lambda(1405). Important effects owing to the configuration mixing among Lambda P-2(1)A, Lambda P-2(8)M, and Lambda P-4(8)M are found. In addition, transitions between the three- and the five-quark components in the baryons turn out to be significant in both radiative and strong decays of the Lambda(1405) resonance.

STUDY ON THE SPATIAL PATTERNS OF LAND-USE CHANGE AND ANALYSES OF DRIVING FORCES IN NORTHEASTERN CHINA DURING 1990-2000

Land-use change is an important aspect of global environment change. It is, in a sense, the direct result of human activities influencing our physical environment. Supported by the dynamic serving system of national resources, including both the environment database and GIS technology, this paper analyzed the land-use change in northeastern China in the past ten years (1990 - 2000). It divides northeastern China into five land-use zones based on the dynamic degree (DD) of land-use: woodland/grassland - arable land conversion zone, dry land - paddy field conversion zone, urban expansion zone, interlocked zone of farming and pasturing, and reclamation and abandoned zone. In the past ten years, land-use change of northeastern China can be generalized as follows: increase of cropland area was obvious, paddy field and dry land increased by 74. 9 and 276. 0 thousand ha respectively; urban area expanded rapidly, area of town and rural residence increased by 76. 8 thousand ha; area of forest and grassland decreased sharply with the amount of 1399. 0 and 1521. 3 thousand ha respectively; area of water body and unused land increased by 148. 4 and 513. 9 thousand ha respectively. Besides a comprehensive analysis of the spatial patterns of land use, this paper also discusses the driving forces in each land-use dynamic zones. The study shows that some key biophysical factors affect conspicuously the conversion of different land- use types. In this paper, the relationships between land- use conversion and DEM, accnmlated temperature(>= 10 degrees C) and precipitation were analysed and represented. We conclude that the land- use changes in northeast China resulted from the change of macro social and economic factors and local physical elements. Rapid population growth and management changes, in some sense, can explain the shaping of woodland/grassland - cropland conversion zone. The conversion from dry land to paddy field in the dry land - paddy field conversion zone, apart from the physical elements change promoting the expansion of paddy field, results from two reasons: one is that the implementation of market-economy in China has given farmers the right to decide what they plant and how they plant their crops, the other factor is originated partially from the change of dietary habit with the social and economic development. The conversion from paddy field to dry land is caused primarily by the shortfall of irrigation water, which in turn is caused by poor water allocation managed by local governments. The shaping of the reclamation and abandoned zone is partially due to the lack of environment protection consciousness among pioneer settlers. The reason for the conversion from grassland to cropland is the relatively higher profits of fanning than that of pasturing in the interlocked zone of farming and pasturing. In northeastern China, the rapid expansion of built-up areas results from two factors: the first is its small number of towns; the second comes from the huge potential for expansion of existing towns and cities. It is noticeable that urban expansion in the northeastern China is characterized by gentle topographic relief and low population density. Physiognomy, transportation and economy exert great influences on the urban expansion.

Impacts of socio-economic factors on sediment yield in the Upper Yangtze River

In recent years, the role of human activities in changing sediment yield has become more apparent for the construction of hydraulic engineering and water conservation projections in the Upper Yangtze River, but it has not been evaluated at the macro scale. Taking Sichuan Province and Chongqing City as an example, this paper studies the relationship between socio-economic factors and sediment yield in the Upper Yangtze River based on section data in 1989 and 2007. The results show that sediment yield is significantly correlated with population density and cultivated area, in which the former appears to be more closely related to sediment yield. Moreover, in the relation of sediment yield vs. population density, a critical value of population density exists, below which the sediment yield increases with the increase of population density and over which the sediment yield increases with the decrease of population density. The phenomenon essentially reflects the influence of natural factors, such as topography, precipitation and soil property, and some human activities on sediment yield. The region with a higher population density than critical value is located in the east of the study area and is characterized by plains, hills and low mountains, whereas the opposite is located in the west and characterized by middle and high mountains. In the eastern region, more people live on the lands with a low slope where regional soil erosion is slight; therefore, sediment yield is negatively related with population density. In contrast, in the western region, the population tends to aggregate in the areas with abundant soil and water resources which usually lead to a higher intensity of natural erosion, and in turn, high-intensity agricultural practices in these areas may further strengthen local soil erosion. It is also found that population tends to move from the areas with bad environment and high sediment yield to the areas with more comfortable environment and less sediment yield. The natural factors have greater influence on sediment yield of western region than that of eastern region. Generally, the natural factors play a dominant role on sediment yield in the Upper Yangtze River.