Synthesis and characterization of novel bipolar PPV-based copolymer containing triazole and carbazole units

Two new blue light-emitting PPV-based conjugated copolymers containing both an electron-withdrawing unit (triazole-TAZ) and electron-rich moieties (carbazole-CAR and bicarbazole-BCAR) were prepared by Wittig condensation polymerization between the triazole diphosphonium salt and the corresponding dialdehyde monomers. Their structures and properties were characterized by FT-IR, TGA, DSC, UV-Vis, PL spectroscopy and electrochemical measurements. The resulting copolymers are soluble in common organic solvents and thermally stable with a T-g of 147degreesC for TAZ-CAR-PPV and of 157degreesC for TAZ-BCAR-PPV. The maximum photoluminescence wavelengths of TAZ-CAR-PPV and TAZ-BCAR-PPV film appear at 460 nm and 480 nm, respectively. Cyclic voltammetry measurement demonstrates that TAZ-BCAR-PPV has good electrochemical reversibility, while TAZ-CAR-PPV exhibits the irreversible redox process. The triazole unit was found to be an effective pi-conjugation interrupter and can play the rigid spacer role in determining the emission colour of the resulting copolymer.

Probe for Measurements of Density/Conductivity in Flows of Conducting Fluids

A probe utilizing the bipolar pulse method to measure the density of a conducting fluid has been developed. The probe is specially designed such that the concentration of a stream tube can be sampled continuously. The density was determined indirectly from the measurement of solution conductivity. The probe was calibrated using standard NaCl solutions of varying molarity and was able to rapidly determine the density of a fluid with continuously varying conductance. Measurements of the conductivity profiles, corresponding density profiles, and their fluctuation levels are demonstrated in a channel flow with an electrolyte injected from a slot in one wall.

The mechanism of energy storage by shearing the solar magnetic field

In this paper, a complete set of MHD equations have been solved by numerical calculations in an attempt to study the dynamical evolutionary processes of the initial equilibrium configuration and to discuss the energy storage mechanism of the solar atmosphere by shearing the magnetic field. The initial equilibrium configuration with an arch bipolar potential field obtained from the numerical solution is similar to the configuration in the vicinity of typical solar flare before its eruption. From the magnetic induction equation in the set of MHD equations and dealing with the non-linear coupling effects between the flow field and magnetic field, the quantitative relationship has been derived for their dynamical evolution. Results show that plasma shear motion at the bottom of the solar atmosphere causes the magnetic field to shear; meanwhile the magnetic field energy is stored in local regions. With the increase of time the local magnetic energy increases and it may reach an order of 4×10^25 J during a day. Thus the local storage of magnetic energy is large enough to trigger a big solar flare and can be considered as the energy source of solar flares. The energy storage mechanism by shearing the magnetic field can well explain the slow changes in solar active regions.

Cyclin A2 is differentially expressed during oocyte maturation between gynogenetic silver crucian carp and gonochoristic color crucian carp

Silver crucian carp (Carassius auratus gibelio) is a unique gynogenetic fish. Because of its specific genetic background and reproduction mode, it is an intriguing model system for understanding regulatory mechanism of oocyte maturation division. It keeps its chromosomal integrity by inhibiting the first meiotic division (no extrusion of the first pole body). The spindle behavior during oocyte maturation is significantly different from that in gonochoristic fish. The chromosomes are first arranged in a tripolar spindle, and then they turn around and are reunited mutually to form a normal bipolar spindle. A new member of the fish A-type cyclin gene, cyclin A2, has been isolated by suppression of subtractive hybridization on the basis of its differential transcription in fully-grown oocytes between the gynogenetic silver crucian carp and gonochoristic color crucian carp. There are 18 differing amino acids in the total 428 residues of cyclin A2 between the two forms of crucian carps. In addition, cDNAs of cyclin A1 and cyclin B have also been cloned from them. Thus two members of A-type cyclins, cyclin A1 and cyclin A2, are demonstrated to exist in fish, just as in frog, humans, and mouse. Northern blotting reveals that cyclin A2 mRNA is more than 20-fold and cyclin A1 mRNA is about 2-fold in fully grown oocytes of gynogenetic silver crucian carp compared to gonochoristic color crucian carp. However, cyclin B does not show such a difference between them. Western blot analysis also shows that the cyclin A2 protein stockpiled in fully grown oocytes of gynogenetic crucian carp is much more abundant than in gonochoristic crucian carp. Moreover, two different cyclin A2 expression patterns during oocyte maturation have been revealed in the two closely related crucian carps. For color crucian carp, cyclin A2 protein is translated only after hormone stimulation. For silver crucian carp, cyclin A2 protein can be detected throughout the process of maturation division. The different expression of cyclin A2 may be a clue to understanding the special maturation division of gynogenetic silver crucian carp.

A new phototransistor with uni-travelling-carrier and optically gradual coupling properties

Based on appropriate combination of different band-gap InGaAsP, a new edge-coupled two-terminal double heterojunction phototransistor (ECTT-DHPT) was designed and fabricated, which is double heterojunction, free-aluminium, and works under uni-travelling-carrier mode and optically gradual coupling mode. This device is fully compatible with monolithic micro-wave integrated circuits (MMIC) and heterojunction bipolar transistor (HBT) in material and process. The DC characteristics reveal that the new ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52 A/W and dark current of 70 nA (when V-EC = 1 V) were obtained.

Effect of heavy boron doping on the electrical characteristics of SiGeHBTs

A modified version of the Jain-Roulston (J-R) model is developed that takes into account the compensation effect of B to Ge in strained SiGe layers for the first time. Based on this new model, the distribution of the bandgap narrowing (BGN) between the conduction and valence bands is calculated. The influence of this distribution on the transport characteristics of abrupt SiGe heterojunction bipolar transistors (HBTs) has been further considered by using the tunnelling and thermionic emission mechanisms instead of the drift and diffusion mechanisms at the interfaces where discontinuities in energy levels appear. The results show that our modified J-R model better fits the experimental values, and the energy band structure has a strong influence on electrical characteristics.

Effect of heavily doped boron on bandgap narrowing of strained SiGe layers

Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain-Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. (C) 2005 Elsevier Ltd. All rights reserved.

On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J

We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.

A direct-conversion mixer with a DC-offset cancellation for WLAN

This paper presents a 5GHz double-balanced mixer with DC-offset cancellation circuit for direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard. The analog feedback loop is used, to eliminate the DC-offset at the output of the double-balanced mixer. The test results show that the mixer with DC-offset cancellation circuit has voltage conversion gain of 9.5dB at 5.15GHz, noise figure of 13.5dB, IIP3 of 7.6 dBm, 1.73mV DC-offset voltage and 67mW power with 3.3-V power supply. The DC-offset cancellation circuit has less than 0.1mm(2) additional area and 0.3mW added power dissipation. The direct conversion WLAN receiver has been implemented in a 0.35 mu m SiGe BiCMOS technology.

Subretinal implantable artificial photoreceptor

The present study reports a subretinal implant device which can imitate the function of photoreceptor cells. Photodiode (PD) arrays on the chip translate the incident light into current according to the intensity of light. With an electrode at the end of every photodiode, the PDs transfer the current to the remnant healthy visual cells such as bipolar cells and horizontal cells and then activate these cells. Biocompatible character of the materials and artificial photoreceptor itself were tested and the photoelectric characteristics of the chips in simulative condition were described and discussed.

Kinetics of picosecond laser pulse induced charge separation and proton transfer in bacteriorhodopsin

Bacteriorhodopsin (BR) films oriented by an electrophoretic method are deposited on a transparent conductive ITO glass. A counterelectrode of copper and gelose gel is used to compose a sandwich-type photodetector with the structure of ITO/BR film/gelose gel/Cu. A single 30-ps laser pulse and a mode-locked pulse train are respectively used to excite the BR photodetector. The ultrafast failing edge and the bipolar response signal are measured by the digital oscilloscope under seven different time ranges. Marquardt nonlinear least squares fitting is used to fit all the experimental data and a good fitting equation is found to describe the kinetic process of the photoelectric signal. Data fitting resolves six exponential components that can be assigned to a seven-step BR photocycle model: BR-->K-->KL-->L-->M-->N-->O-->BR. Comparing tests of the BR photodetector with a 100-ps Si PIN photodiode demonstrates that this type of BIR photocletector has at least 100-ps response time and can also serve as a fast photoelectric switch. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

一种新型的5GHz自适应偏置及可变增益低噪声放大器

该文提出了一种新型的自适应偏置及可变增益低噪声放大器（LNA），利用电荷泵（亦称电压倍增器）将LNA输出信号转换成与LNA射频输入信号功率成比例变化的直流信号，以此信号同时反馈控制LNA的偏置和增益，来实现自适应偏置以及可变增益低噪声放大器。从而极大地改善了LNA的输入线性范围。鉴于5GHz频率下，Bipolar相对于CMOS更好的频率特性和低噪声特性，该项研究采用了BiCMOS工艺，实现了低于3．0dB的噪声系数（高增益状态下）和大约13dBm的输入三阶交调点ⅡP3的控制范围以及大于15dB的增益控制范围。

High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD

The high temperature (300～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabricated by low-pressure chemical vapor deposition on Si (100) substrates are investigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage characteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.