White light emission from fiber pigtailed laser module

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emit in the yellow. The InGaN laser diode was coupled to an optical fiber firstly and the phosphor was excited by the laser light output from the fiber. At 350 mA injection current the luminous flux and the luminous efficacy was 73 lm and 42.7 lm/W, respectively. The luminance was estimated to be 50 cd/mm(2). The relationship of the luminous flux and the luminous efficacy of the white light with injection current were measured and discussed.

High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy

High-quality GaNAs/GaAs quantum wells with high substitutional N concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate in a range of 0.125-1 mu m/h. No phase separation is observed and the GaNAs well thickness is limited by the critical thickness. Strong room-temperature photoluminescence with a record long wavelength of 1.44 mu m is obtained from an 18-nm-thick GaN0.06As0.94/GaAs quantum well. (C) 2005 American Institute of Physics.

Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m

Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying I-V characteristics. Dark line defects are found in the QW Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials

The preparation of high quality ZnO/Si substrates for the growth of GaN blue light emitting materials is considered. ZnO thin films have been deposited on Si(100) and Si(lll) substrates by conventional magnetron sputtering. Morphology, crystallinity and c-axis preferred orientation of ZnO thin films have been investigated by transmitting electron microscopy (TEM), X-ray diffraction (XRD) and X-ray rocking curve (XRC). It is proved that the ZnO thin films have perfect structure. The full-width-at-half-maximum (FWHM) of the ZnO(002) XRC of these films is about 1 degrees, while the minimum is 0.353 degrees. This result is better than the minimum FWHM (about 2 degrees) reported by other research groups. Moreover, comparison and discussion are given on film structure of ZnO/Si(100) and ZnO/Si(lll).

Strong red light emission from silicon nanocrystals embedded in SIO2 matrix

In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250degreesC to RT, the PL intensity increases by two orders of magnitude.

Tb3+/Yb3+ heavily-doped tellurite glasses with efficient green light emission

Without introducing concentration quenching phenomenon, a few wt% of Tb3+ and Yb3+ ions were doped into a group of easily-fiberized tellurite glasses characterized by loose polyhedron structures and rich interstitial positions. Intense green upconversion emission from Tb3+ ions centered at 539 nm due to transition 5D4→7F5 was observed by direct excitation of Yb3+ ions with a laser diode at 976 nm. Optimizing the concentration ratio of Tb3+/Yb3+, a tellurite glass with composition of 80TeO2-10ZnO-10Na2O (mol%)+1.0wt% Tb2O3+3.0wt% Yb2O3 was found to present the highest green light intensity and therefore is especially suitable for efficient green fiber laser development.

White light emission on amplified spontaneous emission with dye content controlled polymer system

White light emission from amplified spontaneous emission (ASE) was realized by optically pumping fluorescent dye 4-(dicy-anomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped semiconducting poly(9,9-dioctylfluorene) (PFO) polymer thin films. Two individual ASE peaks originating from DCJTB and PFO were observed by carefully controlling the DCJTB concentration in PFO. The studies of the ASE characteristics of DCJTB:PFO thin films lead to the conclusion that the DCJTB:PFO system with 0.3% w/w DCJTB dopant concentration in PFO showed the best ASE performance.

White light emission from Eu3+ in CaIn2O4 host lattices

CaIn2O4:xEu(3+) (x=0.5%,1.0%,1.5%) phosphors were prepared by the Pechini sol-gel process [U.S. Patent No. 3,330,697 (1967)] and characterized by x-ray diffraction and photoluminescence and cathodoluminescence spectra as well as lifetimes. Under the excitation of 397 nm ultraviolet light and low voltage electron beams, these phosphors show the emission lines of Eu3+ corresponding to D-5(0,1,2,3)-F-7(J) (J=0,1,2,3,4) transitions from 400 to 700 nm (whole visible spectral region) with comparable intensity, resulting in a white light emission with a quantum efficiency near 10%. The luminescence mechanism for Eu3+ in CaIn2O4 has been elucidated.

Tight intermolecular packing through supramolecular interactions in crystals of cyano substituted oligo(para-phenylene vinylene): a key factor for aggregation-induced emission

Strong supramolecular interactions, which induced tight packing and rigid molecules in crystals of cyano substituent oligo(para-phenylene vinylene) (CN-DPDSB), are the key factor for the high luminescence efficiency of its crystals; opposite to its isolated molecules in solution which have very low luminescence efficiency.

A new 1D metal-organic coordination polymer with blue fluorescent emission: [Cd-2(1,10 '-phen)(2)(betc)(H2O)](n)

A new coordination polymer [Cd-2(1,10'-phen)(2)(betc)(H2O)](n) (1) (betc = benzene-1,2,4,5-tetracarboxylate, 1,10'-phen = 1,10'-phenanthroline) was hydrothermally synthesized from CdCl2.2.5H(2)O, H(4)betc and 1,10'-phen at 160 degreesC. It was characterized by IR, XPS, TG and single-crystal X-ray diffraction. Compound 1 possesses infinite chair-like chains which construct 3D framework through pi-pi interactions and the hydrogen bond interactions. The fluorescent spectrum study shows that compound 1 exhibits blue fluorescent emission in the solid at room temperature.

Blue light-emitting poly(fluorene-co-benzene) containing an oxadiazole moiety

A new kind of polyfluorene containing oxadiazole as the side chain was synthesized. The introduction of oxadiazole moiety as more bulky group prevents the aggregation and reduces the crystallinity of the polymers. Efficient intramolecular energy transfer from oxadiazole moiety to the conjugated backbone has been realized, leading to 70% improvement of photoluminescence quantum efficiency of the designed polymers. Compared with PAF, the PFOXD exhibits significant improvement in electroluminescence properties, with luminous efficiency of 0.8 cd/A and maximum luminance of 1800 cd/m(2).

Synthesis and characterization of blue-light-emitting poly(aryl ether)s containing oligofluorenes in the main chain

A series of blue light-emitting poly(aryl ether)s (PAEs) containing ter- or pentafluorenes in the main chain have been synthesized via nucleophilic substitution polycondensation reaction. The energy levels of the polymers were tuned by introducing hole-transporting triaryamine groups in the side chains and/or incorporating electron-transporting oxadiazole segments in the main chain. The optical properties of the polymers are dominantly determined by the well-defined oligofluorene segments, and therefore all polymers show high photoluminescence quantum yield. Differential scanning calorimeter (DSC) characterizations indicate that they are vitrified polymers with high glass transition temperature (up to 156 degrees C). The polymers comprising pentafluorenes exhibit electroluminescent properties equal to or better than fully conjugated fluorene homopolymers. With the device structure of ITO/PEDOT:PSS/polymer/Ca/Al, an external quantum efficiency of 1.4% along with Commission Internationale de L'Eclairage (CIE) coordinates of (0.17, 0.09) has