Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD

Polycrystalline silicon (poly-Si) films(similar to 10 mu m) were grown from dichlorosilane by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 Angstrom/s at the substrate temperature (T-s) of 1030 degrees C. The average grain size and carrier mobility of the films were found to be dependent on the substrate temperature and material. By using the poly-Si films, the first model pn(+) junction solar cell without anti-reflecting (AR) coating has been prepared on an unpolished heavily phosphorus-doped Si wafer, with an energy conversion efficiency of 4.54% (AM 1.5, 100 mW/cm(2), 1 cm(2)).

Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).

JFET SOS devices: Processing and gamma radiation effects

A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.

Guest inducing p-sulfonatocalix[4] arene into three-dimensional capsule architecture and a mixed A-B double layer framework

The reactions of sodium p-sulfonatocalix[4]arene (Na5L) and terbium/europium(III) chloride in the presence of pyrazine-N,N'-dioxide (PNNO) in aqueous solutions gave the crystalline complexes 1 and 2. Both structures contain molecular capsules of p-sulfonatocalix[4] arene with PNNO as guest molecules in the cavity of the calix[4]arenes. The molecular capsules are connected through sodium and terbium (or europium) centers forming a three-dimensional framework.

Self-assembled 3D microflowery In(OH)(3) architecture and its conversion to In2O3

Using sodium dodecyl sulfate (SDS), a 3D microflowery indium hydroxide [In(OH)(3)] structure assembled from 2D nanoflakes was fabricated in a large quantity via a hydrothermal approach at relative low temperature. The obtained In(OH)(3) flowers exhibited a narrow size range between 4 and 6 mu m. The properties of these composites were characterized by XRD, EDX, FE-SEM, TEM, SAED, and TGA. In this work, both the use of urea and SDS and the amounts of these components played important roles in the formation of In(OH)3 with different nanostructures.

Self-assembly of lambda-DNA networks/Ag nanoparticles: Hybrid architecture and active-SERS substrate

In this article, highly rough and stable surface enhanced Raman scattering (SERS)-active substrates had been fabricated by a facile layer by-layer technique. Unique lambda-DNA networks and CTAB capped silver nanoparticles (AgNP) were alternatively self-assembled on the charged mica surface until a desirable number of bilayers were reached. The as-prepared hybrid architectures were characterized by UV-vis spectroscopy, tapping mode atomic force microscopy (AFM) and confocal Raman microscopy, respectively.

Strain H-2-419-4 of Haematococcus pluvialis induced by ethyl methanesulphonate and ultraviolet radiation

Two strains H-2-410 and H-2-419 were obtained from the chemically mutated survivors of wild Haematococcus pluvialis 2 by using ethyl methanesulphonate (EMS). Strains H2-410 and H2-419 showed a fast cell growth with 13% and 20% increase in biomass compared to wild type, respectively. Then H-2-419-4, a fast cell growth and high astaxanthin accumulation strain, was obtained by exposing the strain H2-419 to ultraviolet radiation (UV) further. The total biomass, the astaxanthin content per cell, astaxanthin production of H-2-4194 showed 68%, 28%, and 120% increase compared to wild H. pluvialis 2, respectively. HPLC (High Performance Liquid Chromatography) data showed also an obvious proportional variation of different carotenoid compositions in the extracts of H2-4194 and the wild type, although no peak of carotenoids appeared or disappeared. Therefore, the main compositions in strain H-2-419-4, like its wild one, were free of astaxanthin, monoester, and diester of astaxanthin. The asexual reproduction in survivors after exposed to UV was not synchronous, and different from the normal synchronous asexual reproduction as the mother cells were motile instead of non-motile. Interestingly, some survivors from UV irradiation produced many mini-spores (or gamete?), the spores moved away from the mother cell gradually 4 or 5 days later. This is quite similar to sexual reproduction described by Elliot in 1934. However, whether this was sexual reproduction remains questionable, as no mating process has been observed.

Light histories influence the impacts of solar ultraviolet radiation on photosynthesis and growth in a marine diatom, Skeletonema costatum

Phytoplanktonic species acclimated to high light are known to show less photoinhibition. However, little has been documented on how cells grown under indoor conditions for decades without exposure to UV radiation (UVR, 280-400 nm) would respond differently to solar UVR compared to those in situ grown under natural solar radiation. Here, we have shown the comparative photosynthetic and growth responses to solar UVR in an indoor-(IS) and a naturally grown (WS) Skeletonema costatum type. In short-term experiment (<1 day), phi(PSII) and photosynthetic carbon fixation rate were more inhibited by UVR in the IS than in the WS cells. The rate of UVR-induced damages of PSII was faster and their repair was significantly slower in IS than in WS. Even under changing solar radiation simulated for vertical mixing, solar UVR-induced higher inhibition of photosynthetic rate in IS than in WS cells. During long-term (10 days) exposures to solar radiation, the specific growth rate was much lower in IS than WS at the beginning, then increased 3 days later to reach an equivalent level as that of WS. UVR-induced inhibition of photosynthetic carbon fixation in the IS was identical with that of WS at the end of the long-term exposure. The photosynthetic acclimation was not accompanied with increased contents of UV-absorbing compounds, indicating that repair processes for UVR-induced damages must have been accelerated or upgraded. (C) 2008 Elsevier B.V. All rights reserved.

Photosynthesis and growth of Arthrospira (Spirulina) platensis (Cyanophyta) in response to solar UV radiation, with special reference to its minor variant

The minor variant of the economically important cyanobacterium, Arthrospira platensis, usually appears in commercial production ponds under solar radiation. However, how sensitive the minor variant to solar UVR and whether its occurrence relates to the solar exposures are not known. We investigated the photochemical efficiency of PSII and growth rate of D-0083 strain and its minor variant in semi-continuous cultures under PAR (400-700 nm) alone, PAR + UV-A (320-400 nm) and PAR + UV-A + UV-B (280-700 nm) of solar radiation. The effective quantum yield of D-0083 at 14:00 p.m. decreased by about 86% under PAR, 87% under PAR + UV-A and 92% under PAR + UV-A + UV-B (280-315 nm), respectively. That of the minor variant was reduced by 93% under PAR and to undetectable values in the presence of UV-A or UV-A + UV-B. Diurnal change of the yield showed constant pattern during long-term (10 days) exposures, high in the early morning and late afternoon but the lowest at noontime in both strains, with the UVR-related inhibition being always higher in the variant than D-0083. During the long-term exposures, cells of D-0083 acclimated faster to solar UV radiation and showed paralleled growth rates among the treatments with or without UVR at the end of the experiment; however, growth of the minor variant was significantly reduced by UV-A and UV-B throughout the period. Comparing to the major strain D-0083, the minor variant was more sensitive to UVR in terms of its growth, quantum yield and acclimation to solar radiation. (c) 2007 Elsevier B.V. All rights reserved.

Effects of solar UV radiation on morphology and photosynthesis of filamentous cyanobacterium Arthrospira platensis

To study the impact of solar UV radiation (UVR) (280 to 400 nm) on the filamentous cyanobacterium Arthrospira (Spirulina) platensis, we examined the morphological changes and photosynthetic performance using an indoor-grown strain (which had not been exposed to sunlight for decades) and an outdoor-grown strain (which had been grown under sunlight for decades) while they were cultured with three solar radiation treatments: PAB (photosynthetically active radiation [PAR] plus UVR; 280 to 700 nm), PA (PAR plus UV-A; 320 to 700 nm), and P (PAR only; 400 to 700 nm). Solar UVR broke the spiral filaments of A. platensis exposed to full solar radiation in short-term low-cell-density cultures. This breakage was observed after 2 h for the indoor strain but after 4 to 6 h for the outdoor strain. Filament breakage also occurred in the cultures exposed to PAR alone; however, the extent of breakage was less than that observed for filaments exposed to full solar radiation. The spiral filaments broke and compressed when high-cell-density cultures were exposed to full solar radiation during long-term experiments. When UV-B was screened off, the filaments initially broke, but they elongated and became loosely arranged later (i.e., there were fewer spirals per unit of filament length). When UVR was filtered out, the spiral structure hardly broke or became looser. Photosynthetic 0, evolution in the presence of UVR was significantly suppressed in the indoor strain compared to the outdoor strain. UVR-induced inhibition increased with exposure time, and it was significantly lower in the outdoor strain. The concentration of UV-absorbing compounds was low in both strains, and there was no significant change in the amount regardless of the radiation treatment, suggesting that these compounds were not effectively used as protection against solar UVR. Self-shading, on the other hand, produced by compression of the spirals over adaptive time scales, seems to play an important role in protecting this species against deleterious UVR. Our findings suggest that the increase in UV-B irradiance due to ozone depletion not only might affect photosynthesis but also might alter the morphological development of filamentous cyanobacteria during acclimation or over adaptive time scales.

Effects of solar ultraviolet radiation on the photochemical efficiency, photosynthetic pigments and biomass production of Spirulina platensis

Effects of solar ultraviolet radiation (UVR) on Spirulina platensis were studied by investigating its photochemical efficiency, photosynthetic pigments and biomass production while exposed to full spectrum solar radiation or depleted of UVR for understanding how and to what extent UVR influences its photosynthetic physiology and production. It was found that UVR brought about an extra inhibition of photochemical efficiency by 26%-30%. The greatest inhibition of photochemical efficiency in S. platensis was observed at noontime, and then recovered to some extent in late afternoon no matter which treatment they were exposed to. The contents of chlorophyll a, phycocyanin and carotenoids increased during initial stage of the exposure, but decreased with elongated exposure. UVR decreased the biomass yield by about 6%. It indicated that filtering out UVR of solar radiation would raise the productivity of S. platensis, which is an important factor that should be considered in the production.

Effects of solar ultraviolet radiation on photosynthesis of the marine red tide alga Heterosigma akashiwo (Raphidophyceae)

In order to assess the short- and long-term impacts of UV radiation (LTVR, 280-400 nm) on the red tide alga, Heterosigma akashiwo, we exposed the cells to three different solar radiation treatments (PAB: 280-700 rim, PA: 320-700 nm, R 400-700 nm) under both solar and artificial radiation. A significant decrease in the effective quantum yield () during high irradiance periods (i.e., local noon) was observed, but the cells partially recovered during the evening hours. Exposure to high irradiances for 15, 30, and 60 min under a solar simulator followed by the recovery (8 h) under dark, 9 and 100 mu mol photons m(-2) s(-1) of PAR, highlighted the importance of the irradiance level during the recovery period. Regardless the radiation treatments, the highest recovery (both in rate and total Y) was found at a PAR irradiance of 9 mu mol photons m(-2) s(-1), while the lowest was observed at 100 mu mol photons m(-2) s(-1). In all experiments, PAR was responsible for most of the observed inhibition; nevertheless, the cells exposed only to PAR had the highest recovery in any condition, as compared to the other radiation treatments. In long-term experiments (10 days) using semi-continuous cultures, there was a significant increase of UV-absorbing compounds (UVabc) per cell from 1.2 to > 4 x 10(-6) mu g UVabc cell(-1) during the first 3-5 days of exposure to solar radiation. The highest concentration of UVabc was found in samples exposed in the PAB as compared to PA and P treatments. Growth rates (mu) mimic the behavior of UV-absorbing compounds, and during the first 5 days mu increased from < 0.2 to ca. 0.8, and stayed relatively constant at this value during the rest of the experiment. The inhibition of the Y decreased with increasing acclimation of cells. All our data indicates that H. akashiwo is a sensitive species, but was able acclimate relatively fast (3-5 days) synthesizing UV-absorbing compounds and thus reducing any impact either on photosystem 11 or on growth. (c) 2006 Published by Elsevier B.V.

High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect

High efficiency AlxGa1-xAs/GaAs heteroface solar cells have been fabricated by an improved multi-wafer squeezing graphite boat liquid phase epitaxy (LPE) technique, which enables simultaneous growth of twenty 2.3 X 2.3cm(2) epilayers in one run. A total area conversion efficiency of 17.33% is exhibited (1sun, AM0, 2.0 x 2.0cm(2)). The shallow junction cell shows more resistance to 1 MeV electron radiation than the deep one. After isochronal or isothermal annealing the density and the number of deep level traps induced by irradiation are reduced effectively for the solar cells with deep junction and bombardment under high electron fluences.