An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy

Rapid thermal annealing (RTA) has been demonstrated as an effective way to improve the crystal quality of GaInNAs(Sb) quantum wells (QWs). However, few investigations have been made into its application in laser growth and fabrication. We have fabricated 1.3 mu m GaInNAs lasers, both as -grown and with post-growth RTA. Enhanced photoluminescence (PL) intensity and decreased threshold current are obtained with RTA, but the characteristic temperature T-o and slope efficiency deteriorate. Furthermore, T-o has an abnormal dependence on the cavity length. We attribute these problems to the deterioration of the wafer's surface. RTA with deposition Of SiO2 was performed to avoid this deterioration, T-o was improved over the samples that underwent RTA without SiO2. Post-growth and in situ annealing were also investigated in a 1.55 mu m GaInNAsSb system. Finally, continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 Elsevier B.V. All rights reserved.

Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers

Rapid thermal annealing (RTA) has been demonstrated as an important way to improve the crystal quality of GaInNAs(Sb)/GaAs quantum wells. However little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. When a GaAs-based laser is grown, AlGaAs is usually used for cladding layers. The growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the GaInNAs(Sb) active region, which affects the material quality. To investigate this effect, various post-growth annealing processes were performed to simulate this process. Great enhancement of the PL intensity was obtained by a two-step process which consisted of annealing first at 700 degrees C for 60 s and then at 600 degrees C for 45 min. We transferred this post-growth annealing to in situ annealing. Finally, a GaInNAsSb laser was grown with a 700 degrees C in situ annealing process. Continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time.

High efficiency fiber to waveguide optical coupler in silicon-on-insulator-based slot waveguides - art. no. 68310R

We propose a novel optical fiber-to-waveguide coupler for integrated optical circuits. The proper materials and structural parameters of the coupler, which is based on a slot waveguide, are carefully analyzed using a full-vectorial three dimensional mode solver. Because the effective refractive index of the mode in a silicon-on-insulator-based slot waveguide can be extremely close to that of the fiber, a highly efficient fiber-to-waveguide coupling application can be realized. For a TE-like mode, the calculated minimum mismatch loss is about 1.8dB at 1550nm, and the mode conversion loss can be less than 0.5dB. The discussion of the present state-of-the-art is also involved. The proposed coupler can be used in chip-to-chip communication.

Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device

Poly(3,4-ethylenedioxythiopliene):poly(styrene sulfonate) (PEDOT:PSS) films have been electrochemically polymerized in situ on ITO glass substrate in boron trifluoride diethyl etherate electrolyte (BFEE). Cyclic voltammograms show good redox activity and stability of the PEDOT films. These films had been directly used to fabricate organic-inorganic hybrid solar cells with the structure of ITO/PEDOT/ZnO:MDMC-PPV/Al. The solar cells made of electrochemically polymerized films exhibit higher energy conversion efficiencies compared with that prepared by the spin-coating method, and the highest value is 0.33%. This in-situ electropolymerized method effectively simplifies fabricating procedures and may blaze a facile and economical route for producing high-efficiency solar cells.

Long-wavelength Si-based MQW photodetectors for application in optical fiber communication

Si-based SiGe/Si strained MQW long-wavelength photodetectors (PD) with cycle type (Ring Shape) waveguide (CWG) and resonant-cavity-enhanced (RCE) structure have been investigated for the first time for improving the quantum efficiency and response time. The results show that the responsivities are higher than that of conventional PD with a same Ge content reported previously. In addition, RCE-PD has an obvious narrow band response with FWHM less than 6nm.

Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application

Electroabsorption (EA) modulator integrated with partially gain coupling distributed feedback (DFB) lasers have been fabricated and shown high single mode yield and wavelength stability. The small signal bandwidth is about 7.5 GHz. Strained Si1-chiGechi/Si multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetectors with SiO2/Si distributed Bragg reflector (DBR) as the mirrors have been fabricated and shown a clear narrow bandwidth response. The external quantum efficiency at 1.3 mum is measured to be about 3.5% under reverse bias of 16 V. A novel GaInNAs/GaAs MQW RCE p-i-n photodetector with high reflectance GaAs/ALAs DBR mirrors has also been demonstrated and shown the selectively detecting function with the FWHM of peak response of 12 nm.

Application of the characteristic CIP method to a shallow water model on the sphere

Semi-implicit algorithms are popularly used to deal with the gravitational term in numerical models. In this paper, we adopt the method of characteristics to compute the solutions for gravity waves on a sphere directly using a semi-Lagrangian advection scheme instead of the semi-implicit method in a shallow water model, to avoid expensive matrix inversions. Adoption of the semi-Lagrangian scheme renders the numerical model always stable for any Courant number, and which saves CPU time. To illustrate the efficiency of the characteristic constrained interpolation profile (CIP) method, some numerical results are shown for idealized test cases on a sphere in the Yin-Yang grid system.

Epitaxy-Assisted Creation of PCBM Nanocrystals and Its Application in Constructing Optimized Morphology for Bulk-Heterojunction Polymer Solar Cells

PCBM (a C-60 derivative) is so far the most successful electron acceptor for bulk-heterojunction polymer photovoltaic (PV) cells. Here we present a novel method epitaxy-assisted creation of PCBM nanocrystals and their homogeneous distribution in the matrix using freshly cleaved mica sheet as the substrate. The highly matched epitaxy relationship between the unit cell of PCBM crystal and crystallographic (001) surface of mica induces abundant PCBM nuclei, which subsequently develop into nanoscale crystals with homogeneous dispersion in the composite film.

Phase Diagram of [Amim]Cl plus Salt Aqueous Biphasic Systems and Its Application for [Amim]Cl Recovery

In this study, binodal curves and tie line data of [Amim]Cl + salt (K3PO4, K2HPO4, K2CO3) + water aqueous biphasic systems (ABS) were measured and correlated satisfactorily with the Merchuk equation and Othmer-Tobias and Bancroft equations, respectively. [Amim]Cl could be recovered from aqueous solutions using the ABS, and the recovery efficiency could reach 96.80%. The recovery efficiency was influenced by the concentrations of the salts and their Homeister series: K3PO4 > K2HPO4 > K2CO3. Our method provides a new and effective route for the recovery of hydrophilic IL using [Amim]Cl + salt + water ABS from aqueous solutions.

Application of a New Cyclic Guanidinium Ionic Liquid on Dye-Sensitized Solar Cells (DSCs)

A new cyclic guanidinium ionic liquid OGI (1,3-dimethyl-2-N ''-methyl-N ''-octylimidazoguanidinium iodide) has been used as a quasi-solid-state electrolyte for dye-sensitized solar cells (DSCs), and 6.38% conversion efficiency was achieved at AM 1.5 simulated sunlight (9.81 mW cm(-2)). Further gelation with SiO2 nanoparticles afforded the solid-state electrolyte, which presented overall conversion efficiency of 5.85%. The diffusion properties of these OGI-based electrolytes were investigated. In the meantime, the optimal structure and ion-pairing interaction in OGI have been proposed by density functional theoretical calculation (DFT) at the B3LYP/6-21G(d,p) level.

Realization of high efficiency microcavity top-emitting organic light-emitting diodes with highly saturated colors and negligible angular dependence

An alternative way to optimize the emission characteristics of a microcavity top-emitting organic light-emitting diode (TOLED) based on a simple device structure is demonstrated via combining a comprehensive theoretical analysis in the microcavity effects with the experimental modification in the carrier injection of both electrodes. It can be seen that the resulting TOLED exhibits much higher efficiencies and a more saturated color than those of the corresponding conventional bottom-emitting device, as well as hardly detectable color shift with viewing angles. Such a strategy may be more feasible in practical application for active-matrix organic light-emitting diode displays.

Synthesis and Application of Thiadiazoloquinoxaline-Containing Chromophores as Dopants for Efficient Near-Infrared Organic Light-Emitting Diodes

series of a donor-acceptor-donor type of near-infrared (NIR) fluorescent chromophores based on [1,2,5]thiadiazolo[3,4-g]quinoxaline (TQ) as an electron acceptor and triphenylamine as an electron donor are synthesized and characterized. By introducing pendent phenyl groups or changing the pi-conjugation length in the TQ core, we tuned tile energy levels of these chromophores, resulting in the NIR emission in a range from 784 to 868 nm. High thermal stability and glass transition temperatures allow these chromophores to be used as dopant emitters, which can be processed by vapor deposition for the fabrication of organic light-emitting diodes (OLEDs) having the multilayered structure of ITO/MoO3/NPB/Alq(3):dopant emitter/BCP/Alq(3)/LiF/Al. The electroluminescence spectra of the devices based on these new chromophores cover a range from 748 to 870 nm. With 2 wt % of dopant 1, the LED device shows an exclusive NIR emission at 752 nm with the external quantum efficiency (EQE) as high as 1.12% over a wide range of current density (e.g., around 200 mA cm(-2)).

High efficiency tandem organic light-emitting devices with Al/WO3/Au interconnecting layer

An interconnecting layer of Al (2 nm)/WO3 (3 nm)/Au (16 nm) was studied for application in tandem organic light-emitting devices. It can be seen that the Al/WO3/Au structure plays the role of an excellent interconnecting layer. The introduction of WO3 in the connection unit significantly improves the device efficiency as compared to the case of Al/Au. Thus, the current efficiency of the two-unit tandem devices is enhanced by two factors with respect to the one-unit devices. The green two-unit tandem device of indium tin oxide/MoO3/4,4(')-N,N-'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl(NPB)/tris(8-hydroxylquinoline) aluminum (Alq(3)):10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]benzopyrano[6,7,8-ij]quinolizin-11-one (C545T)/Alq(3)/LiF/Al/WO3/Au/MoO3/NPB/Alq(3):C545T/Alq(3)/LiF/Al showed a maximum current efficiency of 33.9 cd/A and a power efficiency of 12.0 lm/W.

Tuning the saturated red emission: synthesis, electrochemistry and photophysics of 2-arylquinoline based iridium(III) complexes and their application in OLEDs

A series of novel iridium(III) complexes with two 2-arylquinoline derivatives as cyclometalated ligands and one monoanionic ligand, such as acetylacetonate (acac), N,N'-diethyldithiocarbamate (Et(2)dtc) and O,O'-diethyldithiophosphate (Et(2)dtp), as ancillary ligands have been synthesized and structurally characterized by H-1 NMR, MS and elemental analysis (EA). The cyclic voltammetry, absorption, emission and electroluminescence properties of these complexes were systematically investigated. Through extending pi-conjugation, introducing electron-donating groups in the ligand frame, or changing the ancillary ligands, the HOMO energy levels of the iridium(III) complexes can be tuned, while their LUMO levels remain little affected; in consequence, the emission wavelengths of the iridium(III) complexes can be tuned in the range 606-653 nm. The highly efficient organic light-emitting diodes (OLEDs) with saturated red emission have been demonstrated. A maximum current efficiency of 10.79 cd A(-1), at a current density of 0.74 mA cm(-2), with an emission wavelength of 616 nm and Commisioon Internationale de L'Eclairage (CIE) coordinates of (0.65, 0.35), which are very close to the National Television System Comittee (NSTC) standard red emission, have been achieved when using complex (DPQ)(2)Ir(acac) as a phosphor dopant.