High efficiency tandem organic light-emitting devices with Al/WO3/Au interconnecting layer


Autoria(s): Zhang HM; Dai YF; Ma DG; Zhang HM
Data(s)

2007

Resumo

An interconnecting layer of Al (2 nm)/WO3 (3 nm)/Au (16 nm) was studied for application in tandem organic light-emitting devices. It can be seen that the Al/WO3/Au structure plays the role of an excellent interconnecting layer. The introduction of WO3 in the connection unit significantly improves the device efficiency as compared to the case of Al/Au. Thus, the current efficiency of the two-unit tandem devices is enhanced by two factors with respect to the one-unit devices. The green two-unit tandem device of indium tin oxide/MoO3/4,4(')-N,N-'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl(NPB)/tris(8-hydroxylquinoline) aluminum (Alq(3)):10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]benzopyrano[6,7,8-ij]quinolizin-11-one (C545T)/Alq(3)/LiF/Al/WO3/Au/MoO3/NPB/Alq(3):C545T/Alq(3)/LiF/Al showed a maximum current efficiency of 33.9 cd/A and a power efficiency of 12.0 lm/W.

Identificador

http://ir.ciac.jl.cn/handle/322003/13935

http://www.irgrid.ac.cn/handle/1471x/149700

Idioma(s)

英语

Fonte

Zhang HM;Dai YF;Ma DG;Zhang HM.High efficiency tandem organic light-emitting devices with Al/WO3/Au interconnecting layer,APPLIED PHYSICS LETTERS,2007 ,91(12):文献编号:123504

Palavras-Chave #THIN-FILMS #DIODES
Tipo

期刊论文