利用等效层的消偏振宽带减反膜设计

分析了倾斜入射条件下导致光学薄膜产生偏振的原因, 针对不同偏振态的等效导纳与等效相位进行了分析, 并计算了对称膜层在45°入射条件下不同偏振态的等效折射率与等效相位厚度, 采用等效层方法设计了光学性能良好的600～900 nm波段消偏振宽带减反膜。最后利用电子束蒸发技术制备了薄膜样品, 样品的光谱性能完全能够满足使用要求。其中在600～900 nm波段范围内, 平均反射率均小于1.38%, 反射率的偏振度均低于0.89％。另外, 通过对其理论及实验光学性能、角度敏感性、膜层厚度误差敏感性等方面的分析结果可

三硼酸锂晶体上1064 nm, 532 nm, 355 nm三倍频增透膜的设计

采用矢量法设计了三硼酸锂晶体上1064 nm、532 nm和355 nm三倍频增透膜,结果表明1064 nm、532 nm和355 nm波长的剩余反射率分别为0.0017％、0.0002％和0.0013％。根据误差分析,薄膜制备时沉积速率精度控制在＋5.5％时,1064 nm、532 nm和355 nm波长的剩余反射率分别增加至0.20％、0.84％和1.89％。当材料折射率的变化控制在＋3％时,1064 nm处的剩余反射率增大为0.20％,532 nm和355 nm处分别达0.88％和0.24％。与薄膜

LBO晶体上具有不同厚度过渡层的倍频增透膜的设计和制备

Design and preparation of frequency doubling antireflection coating with different thicknesses of interlayer were investigated for LiB₃O₅ (LBO) substrate. The design was based on the vector method. The thickness of the inserted SiO₂ interlayer could be changed in a wide range for the four-layer design with two zeros at 1064 and 532 nm. The coatings without any interlayer and with 0.1 quarter-wave (λ/4), 0.3 λ/4, 0.5 λ/4 SiO₂ interlayer were deposited respectively on LBO by using electron beam evaporation technique. All the prepared coatings with SiO₂ interlayer indicated satisfying optical behavior. This expanded our option for the thickness of an interlayer when coating on LBO substrate. The prepared films with SiO₂ interlayer showed better adhesion than that without any interlayer. The thickness of the interlayer affected the adhesion, the adhesion for the coating with 0.5 λ/4 SiO₂ interlayer was not as good as the other two.}

LBO晶体上1064，532nm倍频增透膜的镀制及性能分析

用电子束蒸发沉积方法在X切LBO（X-LBO）晶体上镀制了两种不同膜系结构的1064和532nm倍频增透膜，其中一种膜系结构为基底／ZrO2／Y2O3／A12O3／SiO2／空气，另一种为基底／0．5Al2O3／ZrO2／Y2O3／A12O3／SiO2／空气，两种膜系结构的主要差别在于有无氧化铝过渡层。测量了薄膜的反射率光谱曲线，发现两种增透膜在1064和532nm处的反射率均小于0．5％，实际镀制结果与理论设计曲线的差异主要是由材料折射率的变化引起的。且对样品在空气环境中进行了温度为473K的退火处理，

4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备

在4H-SiC基底上设计并制备了Al2O3/SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性。利用编程计算得到Al2O3和SiO2的最优物理膜厚分别为42.0nm和96.1nm以及参考波长λ=280nm处最小反射率为0.09%。由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率。实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715。用电子束蒸发法在4H-SiC基底上淀积Al2O3/SiO2双层膜,厚度分别为42nm和96nm。SEM截面图表明淀积的薄膜和基底间具有较强的附着力。实测反射率极小值为0.33%,对应λ=276nm,与理论结果吻合较好。与传统SiO2单层膜相比,Al2O3/SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景。

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films

4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al2O3/SiO2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A/W at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. (C) 2008 American Institute of Physics.

LiB3O5晶体上四倍频增透膜设计

采用矢量法设计了三硼酸锂（LiB3O5，LBO）晶体上1064nm、532nm、355nm和266nm四倍频增透膜．结果表明，在1064nm、532nm、355nm和266nm波长的剩余反射率分别为0．0019％、0．0031％、0．0061％和0．0047％．根据容差分析，薄膜制备时沉积速率准确度控制在＋6．5％时，基频、二倍频、三倍频和四倍频波长的剩余反射率分别增加至0．24％、0．92％、2．38％和4．37％．当薄膜材料折射率的变化控制在＋3％时，1064nm波长的剩余反射率增大为0．18％，532nm、355nm和266nm波长分别达0．61％，0．59％，0．20％．与薄膜物理厚度相比，膜层折射率对剩余反射率的影响大．对膜系敏感层的分析表明，在1064nm和266nm波长，从入射介质向基底过渡的第二层膜厚度变化对剩余反射率的影响最大，其次是第一膜层．在532nm和355nm波长，从入射介质向基底过渡的第一和第四膜层是该膜系的敏感层．误差分析也表明，薄膜材料的色散对特定波长的剩余反射率具有明显影响，即1064nm、532nm、355nm和266nm波长的剩余反射率分别增加至0．30％、0．23％、0．58％和3．13％．

Novel method for design of surface relief guided-mode resonant gratings at normal incidence

We demonstrate that the surface relief guided-mode resonant gratings with specified central wavelength and FWHM in the visible wavelength range can be designed by analyzing the complex poles of Reflectance and transmission coefficient matrix algorithm (RTCM), a variant of S-matrix propagation algorithm proposed for calculation of multilayer gratings. In addition, FWHM is computed with couple-mode (CM) theory of resonant gratings which is firstly extended by Norton et al. in calculation of waveguide grating. Furthermore, the side band reflections of the filter can be reduced to less than 5% in the visible wavelength with the antireflection (AR) design technique widely used in the thin-film field. (C) 2008 Elsevier B.V. All rights reserved.

反射型导模共振滤波器设计

导模共振滤波器由于其高峰值反射率,低旁带反射,窄带以及带宽可控等优良特性引起了人们极大的关注,采用亚波长光栅的导模共振效应可以实现传统基于高低折射率介质的多层膜滤波器所无法实现的特殊功能,在弱调制模式下,其共振带宽可以被压缩到零点几纳米,但是由于介质表面和空气层的菲涅耳反射,使得偏离或者远离共振区时的反射率偏高,根据等效介质理论,亚波长光栅在远离共振区可以被看为均匀的薄膜,本文通过对导模共振光栅进行单层、双层以及三层抗反射设计,有效的降低了导模共振光栅的旁带反射率,从而在可见光波段获得了性能优良的共振滤波器.

引入过渡层提高介质减反膜的抗激光损伤阈值

提出了一种用于提高介质减反膜的损伤阈值的新的方法，在H2.5L (H:HfO2, L:SiO2)的膜层与基底之间引入4个1/4光学厚度的SiO2薄膜，发现抗激光损伤阈值提高了50%，并且保持1064nm处的反射率低于0.09%。本文分析了造成这一提高的机制，一定厚度的氧化硅过渡层的引入是一种提高介质减反膜的损伤阈值的灵活有效的方法。

Influence of different substrates on laser induced damage thresholds at 1064 nm of Ta2O5 films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection (AR) and high reflector (HR) substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds (LIDTs) at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters: substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.

355nm增透膜的设计、制备与性能

用热舟蒸发法结合修正挡板技术制备了355 nm LaF3/MgF2增透膜,并对部分样品进行了真空退火。采用Lambda 900光谱仪测试了增透膜的低反光谱和透射光谱,并考察了其光谱稳定性;使用脉冲8 ns的355 nm激光测试了增透膜的激光损伤阈值(LIDT);采用Normarski显微镜对增透膜的表面缺陷密度和破斑形貌进行了观察。实验结果表明,制备得到的增透膜的剩余反射率较低,光谱稳定性好;真空退火对增透膜的激光损伤阈值没有改善;增透膜的破环形貌为散点形式,结合破斑深度测试表明薄膜的破坏源于薄膜和基底界面的缺陷点。JGS1熔石英基底由于有好的表面状况、固有的高激光损伤阈值和以其为基底的增透膜具有更低的表面场强,使得其上的增透膜有更高的抗激光损伤能力。

Nonpolarizing guided-mode resonance filter

A normal-incidence nonpolarizing guided-mode resonance filter is designed. There are two waveguide layers and one grating layer in the filter. By adjusting the distance between the two waveguide layers, the same resonance wavelength for both TE and TM polarization can be achieved. An antireflection design method is also used to decrease the sideband reflection of the filter. The results show that the filter has high reflection, more than 99.9% at 500 nm, and the FW-HMs of TE- and TM-polarized light are 2.16 and 0.15 nm, respectively. (C) 2009 Optical Society of America