High-power Nd:YAG planar waveguide laser with YAG and Al2O3 claddings

Thermal effects in Nd:YAG planar waveguide lasers with non-symmetrical claddings are discussed. The heat generated in the active core can be removed more efficiently by directly contacting the active core to the heat sink. Several cladding materials are compared to optimize the heat removal. Furthermore, uniform pumping is achieved with oblique edge-pumping technique. Using quasi-CW pumping at 1 KHz repetition rate, an average output power of 280 W with a slope efficiency of 38% is obtained with a positive unstable resonator. (C) 2008 Elsevier B.V. All rights reserved.

Dual-wavelength competitive output in Nd:Y3Sc1.5Al3.5O12 ceramic disk laser

In this paper, we demonstrated a dual-wavelength competitive output in Nd:Y3SC1.5Al3.5O12 ceramic disk laser. Different dual-wavelength output behaviors for Nd:YSAG and Nd:YAG ceramic disk laser were investigated and discussed. By applying the energy transfer model, we suggested the reasonable explanation for this new phenomenon as the disordered replacing of Al3+ ions by Sc3+ ions. The main advantage of the dual-wavelength ceramic laser is the possibility to serve as the seed source to generate Terahertz radiation. (C) 2008 Elsevier B.V. All rights reserved.

Welding of Al alloy plates using a novel high-average-power pulsed CO2 laser

A novel high-average-power pulsed CO2 laser with a unique electrode structure is presented. The operation of a 5-kW transverse-flow CO2 laser with the preionized pulse-train switched technique results in pulsation of the laser power, and the average laser power is about 5 kW. The characteristic of this technique is switching the preionized pulses into pulse trains so as to use the small preionized power (hundreds of watts) to control the large main-discharge power (tens of kilowatts). By this means, the cost and the complexity of the power supply are greatly reduced. The welding of LF2, LF21, LD2, and LY12 aluminum alloy plates has been successfully achieved using this laser. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Welding of Al alloy plates using a novel high-average-power pulsed CO2 laser

A novel high-average-power pulsed CO2 laser with a unique electrode structure is presented. The operation of a 5-kW transverse-flow CO2 laser with the preionized pulse-train switched technique results in pulsation of the laser power, and the average laser power is about 5 kW. The characteristic of this technique is switching the preionized pulses into pulse trains so as to use the small preionized power (hundreds of watts) to control the large main-discharge power (tens of kilowatts). By this means, the cost and the complexity of the power supply are greatly reduced. The welding of LF2, LF21, LD2, and LY12 aluminum alloy plates has been successfully achieved using this laser. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.

GaN-based violet laser diodes grown on free-standing GaN substrate

National Natural Science Foundation of China 60506001 60776047 60476021 60576003 60836003；National Basic Research Programme of China 2007CB936700

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Impurity-free vacancy diffusion technique for InGaAsP/InP multiple quantum well laser structure

Bandgap tuning of the InGaAsP/InP multiple quant um well (MQW) laser structure by the impurity-free vacancy diffusion (IFVD) is investigated using photoluminescence. It has been demonstrated that the effects of the plasma bombardment to the:sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure. The reliability of the IFVD technique, particularly the effects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer, has been discussed.

The develop of 622Mbits/s free space laser communication system

622Mbits/s free space laser communication system is developed. IT's communication rate is 622Mbits/s. The whole system include three parts which are signal in and out circuit laser driver and receive circuit and optical antenna The communication principle is introduced The experiment result shows that the transmission of data and image are satisfied with demands of design. It have a definite market value.

Characteristics of plasma induced by interaction of a free-oscillated laser pulse with a coal target in air and combustible gas

Plasma in the air is successfully induced by a free-oscillated Nd:YAG laser pulse with a peak power of 10(2-3) W. The initial free electrons for the cascade breakdown process are from the ablated particles from the surface of a heated coal target, likewise induced by the focused laser beam. The laser field compensates the energy loss of the plasma when the corresponding temperature and the images are investigated by fitting the experimental spectra of B-2 Sigma(+) -> X-2 Sigma(+) band of CN radicals in the plasma with the simulated spectra and a 4-frame CCD camera. The electron density is estimated using a simplified Kramer formula. As this interaction occurs in a gas mixture of hydrogen and oxygen, the formation and development of the plasma are weakened or restrained due to the chaining branch reaction in which the OH radicals are accumulated and the laser energy is consumed. Moreover, this laser ignition will initiate the combustion or explosion process of combustible gas and the minimum ignition energy is measured at different initial pressures. The differences in the experimental results compared to those induced by a nanosecond Q-switched laser pulse with a peak power of 10(6-8) W are also discussed. (C) 2009 Professor T. Nejat Veziroglu. Published by Elsevier Ltd. All rights reserved.

基于激光诱导击穿光谱技术的铝合金成分定量分析；Quantitative analysis of element concentration in Al alloy by using laser-induced breakdown spectroscopy

利用Nd:YAG激光器输出的532nm激光束对位于空气中的标准变形铝合金样品进行烧蚀产生了激光诱导等离子体.对测量的230—440nm波长范围的光谱进行了谱线标定,同时基于自由定标方法对样品成分进行了定量分析,确定了样品中的元素含量.分析结果与标准值具有较好的一致性.

Sensitive, Label-Free Protein Assay Using 1-ethyl-3-methylimidazolium Tetrafluoroborate Supported Microchip Electrophoresis with Laser-Induced Fluorescence Detection

Based on the dimer-monomer equilibrium movement of the fluorescent dye Pyronin Y (PY), a rapid, simple, highly sensitive, label-free method for protein detection was developed by microchip electrophoresis with LIF detection. PY formed a nonfluorescent dimer induced by the premicellar aggregation of an anionic surfactant, SDS, however, the fluorescence intensity of the system increased dramatically when proteins such as BSA, bovine hemoglobin, cytochrome c, and trypsin were added to the solution due to the transition of dimer to fluorescent monomer. Furthermore, 1-ethyl-3-methylimidazolium tetrafluoroborate (EMImBF(4)) instead of PBS was applied as running buffers in microchip electrophoresis.