Numerical-Value Perturbation Method with Application of Solving Convective-Diffusion Integral Equation

The convective--diffusion equation is of primary importance in such fields as fluid dynamics and heat transfer hi the numerical methods solving the convective-diffusion equation, the finite volume method can use conveniently diversified grids (structured and unstructured grids) and is suitable for very complex geometry The disadvantage of FV methods compared to the finite difference method is that FV-methods of order higher than second are more difficult to develop in three-dimensional cases. The second-order central scheme (2cs) offers a good compromise among accuracy, simplicity and efficiency, however, it will produce oscillatory solutions when the grid Reynolds numbers are large and then very fine grids are required to obtain accurate solution. The simplest first-order upwind (IUW) scheme satisfies the convective boundedness criteria, however. Its numerical diffusion is large. The power-law scheme, QMCK and second-order upwind (2UW) schemes are also often used in some commercial codes. Their numerical accurate are roughly consistent with that of ZCS. Therefore, it is meaningful to offer higher-accurate three point FV scheme. In this paper, the numerical-value perturbational method suggested by Zhi Gao is used to develop an upwind and mixed FV scheme using any higher-order interpolation and second-order integration approximations, which is called perturbational finite volume (PFV) scheme. The PFV scheme uses the least nodes similar to the standard three-point schemes, namely, the number of the nodes needed equals to unity plus the face-number of the control volume. For instanc6, in the two-dimensional (2-D) case, only four nodes for the triangle grids and five nodes for the Cartesian grids are utilized, respectively. The PFV scheme is applied on a number of 1-D problems, 2~Dand 3-D flow model equations. Comparing with other standard three-point schemes, The PFV scheme has much smaller numerical diffusion than the first-order upwind (IUW) scheme, its numerical accuracy are also higher than the second-order central scheme (2CS), the power-law scheme (PLS), the QUICK scheme and the second-order upwind(ZUW) scheme.

Surface-Bound Selectin-Ligand Binding Is Regulated By Carrier Diffusion

Two-dimensional (2D) kinetics of receptor-ligand interactions governs cell adhesion in many biological processes. While the dissociation kinetics of receptor-ligand bond is extensively investigated, the association kinetics has much less been quantified. Recently receptor-ligand interactions between two surfaces were investigated using a thermal fluctuation assay upon biomembrane force probe technique (Chen et al. in Biophys J 94:694-701, 2008). The regulating factors on association kinetics, however, are not well characterized. Here we developed an alternative thermal fluctuation assay using optical trap technique, which enables to visualize consecutive binding-unbinding transition and to quantify the impact of microbead diffusion on receptor-ligand binding. Three selectin constructs (sLs, sPs, and PLE) and their ligand P-selectin glycoprotein ligand 1 were used to conduct the measurements. It was indicated that bond formation was reduced by enhancing the diffusivity of selectin-coupled carrier, suggesting that carrier diffusion is crucial to determine receptor-ligand binding. It was also found that 2D forward rate predicted upon first-order kinetics was in the order of sPs > sLs > PLE and bond formation was history-dependent. These results further the understandings in regulating association kinetics of surface-bound receptor-ligand interactions.

The effect of diffusion and overhangs/vacancies on the microstructure of zig-zag thin film

Basing on some growth models of thin film, we have investigated the growth mechanism of glancing angle deposition (GLAD) film. The simulation verifies that the overhangs/vacancies also contribute to the columnar growth as well as the self-shadowing effect for GLAD thin film. Besides, we have studied the effect of the deposition rate, surface and bulk diffusions on the microstructure of thin film using the time-dependent Monte Carlo method. The results show that the surface and bulk diffusions can significantly enhance the packing density of thin film in GLAD growth, and the increase of the deposition rate induce the moderate decrease of the packing density. (c) 2006 Elsevier B.V. All rights reserved.

Genetic evidence supports demic diffusion of Han culture

The spread of culture and language in human populations is explained by two alternative models: the demic diffusion model, which involves mass movement of people; and the cultural diffusion model, which refers to cultural impact between populations and in

Prefrontal white matter abnormalities in young adult with major depressive disorder: A diffusion tensor imaging study

Prefrontal impairments have been hypothesized to be most strongly associated with the cognitive and emotional dysfunction in depression. Recently, white matter microstructural abnormalities in prefrontal lobe have been reported in elderly patients with ma

Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion

AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at 540 degrees C were studied using room-temperature photo luminescence (PL) spectroscopy. As the diffusion time increased from 40 to 120 min, PL blue shift taken on the AlGaInP/GaInP quantum well regions increased from 36.3 to 171.6 meV. Moreover, when the diffusion time was equal to or above 60 min, it was observed firstly that a PL red shift occurred with a PL blue shift on the samples. After detailed analysis, it was found that the red-shift PL spectra were measured on the Ga0.51In0.49P buffer layer of the samples, and the mechanism of the PL red shift and the PL blue shift were studied qualitatively. (C) 2007 Elsevier B.V. All rights reserved.

Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings

Circular dichromatic absorption difference spectroscopy is developed to measure the spin diffusion dynamics of electrons in bulk n-GaAs. This spectroscopy has higher detection sensitivity over homodyne detection of spin-grating-diffracted signal. A model to describe circular dichromatic absorption difference signal is derived and used to fit experimental signal to retrieve decaying rate of spin gratings. A spin diffusion constant of D-s=201 +/- 25 cm(2)/s for bulk n-GaAs has been measured at room temperature using this technique and is close to electron diffusion constant (D-c), which is much different from the case in GaAs quantum wells where D-s is markedly less than D-c.

Ferromagnetism in Mn and Cr doped GaN by thermal diffusion

Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity. (c) 2004 Elsevier B.V. All rights reserved.

A study on the minority carrier diffusion length in n-type GaN films

The minority carrier diffusion length of n-type GaN films grown by metalorganic chemical vapor deposition (MOCVD) has been studied by measuring the surface photovoltaic (PV) spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.

As-doped p-type ZnO films by sputtering and thermal diffusion process

As-doped p-type ZnO films were grown on GaAs by sputtering and thermal diffusion process. Hall effect measurements showed that the as-grown films were of n-type conductivity and they were converted to p-type behavior after thermal annealing. Moreover, the hole concentration of As-doped p-type ZnO was very impressible to the oxygen ambient applied during the annealing process. In addition, the bonding state of As in the films was investigated by x-ray photoelectron spectroscopy. This study not only demonstrated an effective method for reliable and reproducible p-type ZnO fabrication but also helped to understand the doping mechanism of As-doped ZnO. (c) 2006 American Institute of Physics.

Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

We investigate the effects of lightly Si doping on the minority carrier diffusion length in n-type GaN films by analyzing photovoltaic spectra and positron annihilation measurements. We find that the minority carrier diffusion length in undoped n-type GaN is much larger than in lightly Si-doped GaN. Positron annihilation analysis demonstrates that the concentration of Ga vacancies is much higher in lightly Si-doped GaN and suggests that the Ga vacancies instead of dislocations are responsible for the smaller minority carrier diffusion length in the investigated Si-doped GaN samples due to the effects of deep level defects. (c) 2006 American Institute of Physics.

Fe-diffusion-induced defects in InP annealed in iron phosphide ambient

Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe.

Impurity-free vacancy diffusion technique for InGaAsP/InP multiple quantum well laser structure

Bandgap tuning of the InGaAsP/InP multiple quant um well (MQW) laser structure by the impurity-free vacancy diffusion (IFVD) is investigated using photoluminescence. It has been demonstrated that the effects of the plasma bombardment to the:sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure. The reliability of the IFVD technique, particularly the effects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer, has been discussed.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.