电子废物污染地区水生生物体内多氯联苯的异构体分布特征和毒性

电子废物已被证实是众多污染物的释放源,其引起的环境问题正日益受到人们的关注。利用同位素稀释GC/MS法测定了电子废物污染区的田螺、泥鳅和鲫鱼三种水生生物体内的PCBs含量和异构体组成特征。研究结果表明,田螺、泥鳅和鲫鱼体内PCBs平均浓度分别高达1303.53、3845.00和5645.34 ng/g脂重;毒性当量(TEQs)分别为1.35、8.44和29.18 pg WHO-TEQ/g湿重。其中,泥鳅和鲫鱼体内PCBs的TEQs都高于2006年欧盟规定的鱼类可食用部分最大TEQs允许值。此外,PCB 1

秀丽隐杆线虫抗性基因研究进展

从3个方面总结了秀丽隐杆线虫在抗性基因方面的研究进展。秀丽隐杆线虫的先天性免疫系统在抗病原菌、抗氧化应激等方面至关重要,它主要是通过MAPK、DAF-2、TGF-β三条信号途径发挥作用;另外,含TIR区蛋白和抗菌多肽也是秀丽隐杆线虫抗微生物感染机制的重要组成部分。在秀丽隐杆线虫的抗药性基因研究方面,发现了许多抗药性相关蛋白,如P-糖蛋白和多药耐药性相关蛋白MRP在抵抗多种药物的过程中发挥重要作用;而抗驱虫剂相关蛋白也在专门针对各种驱虫剂作用机制的研究中被发现;转录因子SKN-1、信息沉默调节蛋白SIR2、

内陆水环境修复技术进展

水环境退化是全球普遍面临的重要问题,退化后的水环境修复、重建,已成为当前各国重视的焦点,也是环境科学与工程研究的热点。该文全面综述了国内外水环境修复技术的研究进展,并在此基础上对水环境修复的重点和热点进行了分析和归纳。文章指出,为改善我国水环境,还有待于进一步加强水环境修复的方法学、基础理论、应用技术和示范推广等方面的研究工作。

Quantitative Determination of Microcystins in Rat Plasma by LC-ESI Tandem MS

A rapid and sensitive method was developed and validated for the determination of MCYST (microcystin)-RR, -LR, and [Dha(7)] MCYST-LR in rat plasma by liquid chromatography-tandem mass spectrometry. The analytes were extracted from rat plasma by protein precipitation, followed by solid-phase extraction. Liquid chromatography with electrospray ionization mass spectrometry, operating in selected reaction monitoring (SRM) mode, was used to quantify MCYST-RR, -LR, and [Dha(7)] MCYST-LR in rat plasma. The recoveries for each analyte in rat plasma ranged from 70.8 to 88.7%. The calibration curve was linear within the range from 0.005 to 1.25 mu g mL(-1). The limit of detection were 1.4, 1.0, 0.6 ng mL(-1) for MCYST-RR, -LR, and [Dha(7)] MCYST-LR. The overall precision was determined on three different days. The values for within- and between-day precision in rat plasma were within 15%. This method was applied to the identification and quantification of microcystins in rat plasma with acute exposure of microcystins via intravenous injection.

Epitaxial growth of SiC on complex substrates

Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.

Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells

Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.

MoNi/gamma-Al2O3 Catalyst: Preparation and Catalytic Activity for Acetic Acid Hydrotreating

MoNi/gamma-Al2O3 catalysts were prepared by the impregnation method. The catalyst samples were characterized by XRD and TPR. The effects of Mo promoter content and the catalyst reducing temperature Oil hydrotreatment activity of the catalyst were studied under 200 degrees C and 3 MPa hydrogen pressure using acetic acid as the model compound. The XRD results indicate that the addition of Mo promoter is beneficial to the uniformity of nickel species on the catalyst and decreases the Interaction between nickel species and the support Which results in the decrease the of NiAl2O4 spinel formation. The addition of Mo promoter also decreases the reducing temperature of the catalyst. After the catalyst of 0.06 MoNi/gamma-Al2O3 being reduced Under the atmosphere of H-2/N-2(5/95, V/V), nickel oxide was reduced to Ni-0. The reaction was promoted obviously upon the addition of the MoNi/gamma-Al2O3 catalyst reduced at 600 degrees C. The Mo-modified Ni/gamma-Al2O3 catalyst reduced at 600 degrees C displayed the highest activity during the reaction, the conversion of acetic acid reached the highest point of 33.2%. The products included ethyl acetate and water.

高产抗旱优质谷子新品种辐谷7号的选育与推广利

利用400Gy 60Co γ射线处理87070谷子品系干种子,选育出辐谷7号新品种。该品种具有株型紧凑、茎秆矮、高产抗旱优质并且适应种植地区广等特点。2002年2月通过陕西省农作物品种审定委员会审定,截止2008年在黄土高原地区累计推广10.8万hm2。

水文条件对紫色土坡面土壤侵蚀及养分流失的影响

采用人工模拟降雨试验,研究水文条件对紫色土坡面土壤侵蚀及氮和磷养分流失的影响。试验处理包括2个施肥水平(低肥和高肥水平),4个水文条件(自由下渗、土壤水分饱和、壤中流、壤中流+降雨)和一个降雨强度(60 mm/h,历时60 min)。结果表明:壤中流+降雨和土壤水分饱和条件下的土壤侵蚀量分别是自由下渗条件下的3.1和1.7倍,同自由下渗相比,壤中流、壤中流+降雨和土壤水分饱和条件下,地表径流中NO3-N、HPO4-P的浓度和流失量有显著增加;低肥水平条件下,自由下渗、土壤水分饱和、壤中流和壤中流+降雨地表径流中,NO3-N的浓度分别是0.88、58.90、698.41和87.80 mg/L,对应水文条件下地表径流中,HPO4-P的浓度分别是0.252、0.322、0.811和0.383 mg/L,高肥水平条件下,径流中的NO3-N和HPO4-P的浓度也有相同的趋势;土壤水分饱和条件下,地表径流中NO3-N和HPO4-P的流失量分别是自由下渗条件下的27~39和1.3倍,壤中流+降雨条件下,地表径流中NO3-N和HPO4-P的流失量分别是自由下渗条件下的100~114和1.5~1.7倍,同时,壤中流+降雨和土壤...

垂直腔面发射激光器的热学特性

通过求泊松方程、电流密度方程、载流子扩散方程以及有源层结压降方程自洽解的方法,计算了垂直腔面发射激光器(VCSEL)的电势分布,进而求解热传导方程,得到VCSEL的温度分布.详细分析了注入电流密度小于或等于阈值电流密度时,晶片键合结构垂直腔面发射激光器的键合界面阻抗、氧化层限制孔径、外加电压以及分布布拉格反射镜的热导率的大小对VCSEL内部温度分布的影响.

ECR plasma CVD法淀积980 nm大功率半导体激光器端面光学膜技术

介绍了电子回旋共振等离子体化学气相沉积(简称ECR plasma CVD)法淀积980nm大功率半导体激光器两端面光学膜的工艺条件，探索了膜系监控的方法和优越性，讨论了这种淀积方法的优点和淀积的光学膜的优良特性。

Epitaxial growth of SiC on complex substrates

Epitaxial growth of SiC on complex substrates was carried out at substrate temperature from 1200 degreesC to 1400 degreesC. Three kinds of new complex substrates, c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire, were used in this study. We obtained a growth rate in the range of 1-6 mum/h. Thick (6 mum) SIC epitaxial layers with no cracks were successfully obtained on AlN/sapphire and GaN/AlN/sapphire substrates. X-ray diffraction patterns have confirmed that single-crystal SiC was obtained on these complex substrates. Analysis of optical transmission spectra of the SIC grown on sapphire substrates shows the lowest-energy gap near 2.2 eV, which is the value for cubic SiC. The undoped SIC showed n-type electrical conductivity. (C) 2001 Elsevier Science B.V. All rights reserved.