固相微萃取与色谱联用方法分析水中12种有机氯化合物

运用顶空固相微萃取与色谱联用方法(HS-SPME-GC)对水中的残留有机氯化合物进行了分析.对影响HS-SPME-GC分析灵敏度的各种实验因素如涂层种类、萃取温度、平衡时间、离子浓度等进行了讨论,并将该方法与固相萃取法(SPE)、液液萃取法(LLE)作了对比;同时考察了常见环境共存污染物直链烷基苯磺酸钠(LAS)对几种方法的影响.

Photosynthetic bicarbonate utilization by a terrestrial cyanobacterium, Nostoc flagelliforme (Cyanophyceae)

The photosynthetic characteristics of the terrestrial cyanobacterium, Nostoc flagelliforme, after complete recovery by rewetting, was investigated to see whether it could use bicarbonate as the external inorganic carbon source when submerged. The photosynthesis-pH relationship and high pH compensation point suggested that the terrestrial alga could use bicarbonate to photosynthesize when submerged. The photosynthetic oxygen evolution rates were significantly inhibited in Na+-free and Na+ + Li+ media but were not affected by the absence of Cl-, implying that the bicarbonate uptake was associated with Na+/HCO3- symport rather than Cl-/HCO3- exchange system.

Analysis of organchlorine compounds in water by solid phase microextraction and gas chromatography

In this work, both,solid phase microextraction (SPME) and solid phase extraction(SPE) were used to enrich organochlorine compounds in water samples and analyzed by gas chromatography with electron capture detector. The operating conditions of SPME have been studied and different kinds of solid phase were compared. Linear alkybenzene sulfonate(LAS) was added to the samples to investigate its effect on the analysis. The results indicated that polyacrylate was better than other commercial solid phases in extraction of moderated polar organic compounds and the sensitivity of SPME was higher than SPE. LAS affect much in liquid-liquid extraction and headspace SPME; but it has little effect on SPE and direct-SPME method. The applications showed that SPME was a fast and effective method in sample preparation.

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.

Information geometry theory of high-dimension space and application for speaker independent continuous digit speech recognition

In the light of descriptive geometry and notions in set theory, this paper re-defines the basic elements in space such as curve and surface and so on, presents some fundamental notions with respect to the point cover based on the High-dimension space (HDS) point covering theory, finally takes points from mapping part of speech signals to HDS, so as to analyze distribution information of these speech points in HDS, and various geometric covering objects for speech points and their relationship. Besides, this paper also proposes a new algorithm for speaker independent continuous digit speech recognition based on the HDS point dynamic searching theory without end-points detection and segmentation. First from the different digit syllables in real continuous digit speech, we establish the covering area in feature space for continuous speech. During recognition, we make use of the point covering dynamic searching theory in HDS to do recognition, and then get the satisfying recognized results. At last, compared to HMM (Hidden Markov models)-based method, from the development trend of the comparing results, as sample amount increasing, the difference of recognition rate between two methods will decrease slowly, while sample amount approaching to be very large, two recognition rates all close to 100% little by little. As seen from the results, the recognition rate of HDS point covering method is higher than that of in HMM (Hidden Markov models) based method, because, the point covering describes the morphological distribution for speech in HDS, whereas HMM-based method is only a probability distribution, whose accuracy is certainly inferior to point covering.

Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD

The annealing behavior of the hexagonal phase content in cubic GaN (c-GaN) thin films grown on GaAs (001) by MOCVD is reported. C-GaN thin films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). High temperature annealing is employed to treat the as-grown c-GaN thin films. The characterization of the c-GaN films is investigated by photoluminescence (PL) and Raman scattering spectroscopy. The change conditions of the hexagonal phase content in the metastable c-GaN are reported. There is a boundary layer existing in the c-GaN/GaAs film. When being annealed at high temperature, the intensity of the TOB and LOB phonon modes from the boundary layer weakens while that of the E-2 phonon mode from the hexagonal phase increases. The content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period.

Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching

The dislocations and precipitates in SI-GaAs single crystals are revealed by ultrasonic-aided Abrahams-Buiocchi etching (USAB), and the etch pits are observed and measured by metalloscope and scanning electron microscope (SEM) equipped with an energy dispersive X-ray spectrometer (EDS), respectively. The size of etch pit revealed by USAB etching is about 1 order of magnitude smaller than that revealed by molten KOH. The amount of arsenic atoms in the dislocation-dense zone is about 1% larger than that in an adjacent dislocation-free zone measured by EDS attached to SEM, which indicates that the excess arsenic atoms adjacent to the dislocation-dense zone are attracted to the dislocations and precipitate there due to the deformation energy.

40Gb／s甚短距离（VSR）光传输技术

电信局内设备连接的增长使人们迫切需要开发低成本的甚短距离（VSR）光传输技术。传统的400b／S（STM-256／0C-768）接口是为长距离传输设计的，对于传输距离在300m以内的大容量、高速传输场合并不适用，因此有必要寻找一种比现有400b／s短距离方案成本低的替代方案。详细介绍了VSR5—1．0协议。

分子束外延低温生长GaAs缓冲层及性能研究

于2010-11-23批量导入