In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates

Self-assembled InxGa1-xAs quantum dots (QDs) on (311)A/B GaAs surfaces have been grown by molecular beam epitaxy (MBE). Spontaneously ordering alignment of InxGa1-xAs with lower In content around 0.3 have been observed. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311)B surface, and is strongly dependent upon the In content x. The ordering alignment become significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) or (311)A substrates. (C) 1999 Elsevier Science B.V. All rights reserved.

Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates

The formation of triangular-shaped dot-like (TD) structures grown by molecular beam epitaxy on GaAs (311)A substrates patterned with square- and triangular-shaped holes is compared. On substrates patterned with square-shaped holes, TD structures are formed via the pinch-off of two symmetrically arranged {111} planes which develop freely in the regions between the holes on the original substrate surface, while the (111)A sidewalls of the as-etched holes develop a rough morphology during growth. The evolution of the rough ( 1 1 1)A sidewalls is eliminated on substrates patterned with triangular shaped holes resulting in similar TD structures with highly improved uniformity over the entire pattern. Spectrally and spatially resolved cathodoluminescence spectroscopy reveals the lateral variation of the quantum-well confinement energy in the TD structures generating distinct lateral energy barriers between the top portion and the nearby smooth regions with efficient radiative recombination. Formation of TD structures provides a new approach Do fabricate three-dimensionally confined nanostructures in a controlled manner.

Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy

Photoluminescence (PL) investigation was carried out on GaInP/GaAs multiple quantum wells structures grown on (001) and (311) B surfaces of GaAs by gas source molecular beam epitaxy. Superlattice structures of GaAs/GaInP grown on (001) GaAs substrate were also studied in comparison. Deep-level luminescence was seen to dominate the PL spectra from the quantum wells and superlattice structures that were grown on (001) GaAs substrate. In contrast, superior optical properties were exhibited in the same structures grown on (311) B GaAs surfaces. The results suggested that GaAs/GaInP quantum well structures on (311) B oriented substrates could efficiently suppress the deep-level emissions, result in narrower PL peaks indicating smooth interfaces. (C) 1998 American Institute of Physics.

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix

In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.

EFFECTIVE-MASS THEORY FOR GAAS/GA1-XALXAS QUANTUM WIRES AND CORRUGATED SUPERLATTICES GROWN ON (311)-ORIENTED SUBSTRATES

The electronic structures of GaAs/Ga1-xAlxAs quantum wires (corrugated superlattices) grown on (311)-oriented substrates are studied in the framework of the effective-mass envelope-function method. The electron and hole subband structure and optical transition matrix elements are calculated. When x=1, the results are compared with experiments, and it is found that the direct transition becomes an indirect transition as the widths of well and barrier become smaller.

Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100)GaAs substrates

Low-temperature photoluminescence and excitation spectra from InAs monolayer quantum structures, grown on (311)A, (311)B, and (100) GaAs substrates, are investigated, The structures were grown simultaneously by conventional molecular-beam epitaxy (MBE), The experimental results show that the quality of InAs monolayer on (311)B GaAs substrate is obviously better in crystal quality than those on the two other oriented GaAs substrates. In addition, the transition peaks of the InAs layer grown on (311) GaAs substrates shift to higher energy with respect to that from the InAs layer grown on (100) GaAs substrate.

顶部平坦化32通道AWG的设计与研制

根据优化输入端多模干涉器（MMI）结构设计，研制出32通道50GHz通道间隔、顶部平坦化的阵列波导光栅（AWG）器件。该器件的采用6μm×6μm折射率差为0．75％的Si基SiO2埋型波导结构，阵列波导数为130，罗兰圆半径为9419．72μm，相邻阵列波导长度差为128．42μm。测试结果表明

GaAs（311）A衬底上自组装InAs量子点的结构和光学特性

于2010-11-23批量导入

生长在（311）A面GaAs衬底上的InAlAs/AlGaAsⅡ型量子点的光致发光研究

于2010-11-23批量导入

Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.

落叶松人工林养分循环与养分利用效率研究

通过对抚顺市温道林场20、53和69年生长白落叶松（Larix olgensis）人工林生物量和营养元素的积累与分配、养分利用效率和养分再吸收效率、养分生物循环的研究，探讨了长白落叶松生长发育不同阶段的养分生态学特征；对东北林业大学帽儿山实验林场17年生兴安落叶松（Larix gmelinii）人工林进行5年的施肥（NH4NO3，15 g•m-2•a-1），研究了施肥对人工林养分生物循环的影响。结果表明： （1）20、53和69年生单株落叶松生物量分别为33.14 kg•tree-1、311.42 kg•tree-1和408.46 kg•tree-1，随林龄的增长而增加。各器官生物量的分配格局为：树干>根>树枝>树皮>针叶。树干生物量的分配比例为50.16%~69.20%，随林龄的增长比例增大，而其他器官生物量的分配比例则逐渐减小。20、53和69年生单株落叶松净生产力分别为3.04 kg•tree-1•a-1、9.68 kg•tree-1•a-1和10.21 kg•tree-1•a-1，随林龄的增长而增大。针叶和树干的净生产力最大，分别占整株林木净生产力的40.07%~47.93%和27.32%~40.97%，并且随林龄的增长而增大。树枝、树皮和根的净生产力则表现出随林龄的增长呈抛物线状。 （2）20、53和69年生单株落叶松N、P、K、Ca、Mg等5种营养元素的总贮量分别为308.14 g•tree-1、2021.01 g•tree-1和2485.24 g•tree-1，随林龄的增长而增加。5种营养元素的贮量大小为：Ca>N>K>Mg>P。树干养分贮量的分配比例为19.74%~34.23%，随林龄的增长呈抛物线状。针叶、树枝和树皮的养分贮量占整株林木养分贮量的比例为35.16%~45.59%，建议在采伐木材时实施去皮、打枝等措施，留下针叶、树枝和树皮在林地中，让其自然分解以使营养元素重新归还利用，对于维持林地的养分平衡和长期生产力具有积极作用。 （3）20、53和69年生单株落叶松年吸收养分量分别为35.31 g•tree-1•a-1、97.83 g•tree-1•a-1和100.08 g•tree-1•a-1，随林龄的增长而增加。5种营养元素的年吸收量大小为：Ca>N>K>Mg>P。落叶松的养分利用效率随林龄的增长而增大，但生长到一定年龄阶段后，其养分利用效率逐渐趋于稳定。落叶松的最佳采伐年龄应为养分利用效率保持稳定时的年龄，此时采伐单位干材所带走的林地养分量较少。不同营养元素的利用效率不同，P的利用效率最高，Mg、K次之，N、Ca最低。不同器官的养分利用效率不同，树干的养分利用效率最高，其次是根、树枝、树皮，针叶最低。随着林龄的增长，树干和根的养分利用效率增大，而树枝和树皮的养分利用效率减小。 （4）落叶松叶片的N再吸收效率为50.76%~55.11%，随林龄的增长表现出增大的趋势；P和K再吸收效率分别为64.38%~68.85%和87.85%~90.62%，随林龄的增长表现出减小的趋势。从养分利用效率和养分再吸收效率综合判断，本研究区落叶松生长可能受土壤N、P、K供应的限制，3种营养元素的限制作用大小为：K>P>N。 （5）落叶松人工林养分的年吸收量、年存留量和年归还量分别为51.94~78.35 kg•hm-2•a-1、17.77~29.43 kg•hm-2•a-1和34.18~48.92 kg•hm-2•a-1，均随林龄的增长而减少，这与林分密度逐渐减小有关。5种营养元素的年吸收量和年存留量大小均为：Ca>N>K>Mg>P，年归还量大小为：Ca>N>Mg>K>P。落叶松人工林的养分循环速率为0.624~0.658，随林龄的增长而增大。5种营养元素的循环速率以Mg、N最快，Ca、P次之，K最慢。K的循环速率较低，可能与研究区土壤K含量较低而表现出的K再吸收效率较高有关。 （6）施肥导致落叶松叶片N再吸收效率显著降低，而凋落叶片的N浓度显著增加，从而使凋落叶片的C/N比由80.29降低到60.29。施肥林地凋落叶片C/N比的降低使其分解速率加快，有利于其养分归还土壤，从而加快了系统的养分循环速率，提高了系统的养分利用率。因此，在人工林经营中，施肥不仅能提高林地生产力，而且对于维持林地养分循环具有积极作用。