Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.

Design of two-dimensional photonic crystal edge emitting laser for photonic integrated circuits

An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benelits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(lambda/eta(slab))(3) for oscillation -mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.

A two-dimensional photonic crystal slab mirror with silicon on insulator for wavelength 1.3 mu m

A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3 mu m with a silicon-on-insulator (Sol) substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the F-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3 mu m, hence the incident light at wavelength 1.3 mu m will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540mn. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.

Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer

We report on stacking fault (SF) detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si(100) substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability (BP) model in the framework of linear-chain concept. Good agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 angstrom in the BP model.

共源-共栅组态S~2I电流存储单元及其性能

针对原型S~2I开关电流存储单元性能上的一些弱点，提出了共源-共栅组态的S~2I电流存储单元（简称CS~2I）新结构，使其关键速度与精度性能得到较好的改善。相同器件尺寸下的CS~2I单元电路相比，后者速度性能提高了1.6倍，两种电路结构同样应用于延迟单元和双采样双线性积分器功能部件的HSPICE仿真表明

渐变应变偏振不灵敏半导体光学放大器

采用渐变应变有源区结构，制备出偏振不灵敏半导体光学放大器，工作电流在60～160mA范围内，其3dB带宽范围不小于35nm，偏振不灵敏度小于0.35dB，自发发射出光功率为0.18～3.9mW。

用侧向外延生长法降低立方相GaN中的层错密度

尝试用侧向外延（ELOG）方法来降低立方相GaN中的层错密度。侧向外延是在SiO_2/GaN/GaAs图像形底上进行的，对生长所得的立方相GaN外延层用扫描电子显微镜（SEM）和透射电子显微镜（TEM）进行了观察和分析，TEM的平面像表明经过ELOG方法生长后，立方相GaN外延层中的层错密度由侧向外延生长前的5 * 10~9cm~(-2)降低至生长后的6 * 10~8cm~(-2)。双晶X射线衍射（DCXRD）测量给出侧向外延前后外延层ω扫描（002）衍射摇摆曲线的半高宽（FWHM）分别为33’和17.8’，表明晶体质量有了较大改善。对立方相GaN侧向外延过程中层错减少的机制进行了讨论。

Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP

Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PI and PC.

半导体面发射微腔激光器及其集成面阵的应用

半导体面发射微腔激光器可用于制作极低激射阈值、高密集度、动态单纵模工作的二维光源。若制成锁相面阵,可以得到相当强的输出。