Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with 42.5% indium content were successfully grown by molecular beam epitaxy. The growth of well layers was monitored by reflection high-energy electron diffraction (RHEED). Room temperature photoluminescence (PL) peak intensity of the GaIn0.425NAs/GaAs (6 nm / 20 nm) 3QW is higher than, and the full width at half maximum (FWHM) is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality due to strain compensation effects by introducing N to the high indium content InGaAs epilayer. The measured (004) X-ray rocking curve shows clear satellite peaks and Pendellosung fringes, suggesting high film uniformity and smooth interfaces. The cross sectional TEM measurements further reveal that there are no structural defects in such high indium content QWs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The fabrication of TiO2-supported zeolite with core/shell heterostructure for ethanol dehydration to ethylene

The TiO2-supported zeolite with core/shell heterostructure was fabricated by coating aluminosilicate zeolite (ASZ) on the TiO2 inoculating seed via in situ hydrothermal synthesis. The catalysts were characterized by transmission electron microscope (TEM), X-ray diffraction (XRD), nitrogen physisorption (BET), and Fourier transform infrared spectroscopy (FT-IR). The surface acidity of the catalysts was measured by pyridine-TPD method. The catalytic performance of the catalysts for ethanol dehydration to ethylene was also investigated. The results show that the TiO2-supported zeolite composite catalyst with core/shell heterostructure exhibits prominent conversion efficiency for ethanol dehydration to ethylene.

Catalytic Dehydration of Ethanol to Ethylene on TiO2/4A Zeolite Composite Catalysts

TiO2/4A zeolite composite catalysts were prepared by coating TiO2 on 4A zeolite via liquid phase deposition. The TiO 2/4A zeolite composite catalysts wtih higher surface weak acidity and lower mediate strong acidity exhibit much better catalytic performance on ethanol dehydration to ethylene compared with 4A zeolite. It is suggested that the TiO2 promoter could improve the effective Lewis acidity of composite catalyst which consequently enhanced the catalytic performance.

溶液浇铸嵌段共聚物薄膜的自组织相行为

本论文以聚苯乙烯–聚甲基丙烯酸甲酯（PS–b–PMMA）两嵌段共聚物为研究对象，系统地考察了嵌段共聚物/择优亲和性良溶剂的溶液浇注膜由溶液膜向固体膜转化过程中嵌段共聚物的自组织相行为。 采用冷冻干燥的方法，研究了不同组成的PS–b–PMMA两嵌段共聚物分别用对不同嵌段组分有择优亲和性的良溶剂浇注时的薄膜在可控挥发的过程中，随着聚合物浓度的增加，不同聚合物分子链在溶液中自组织形成有序结构的过程。结果表明当溶剂表现出对平衡态呈柱状相的嵌段共聚物中含量少的嵌段组分有择优亲和性时，在聚合物浓度较低的溶液中耗尽吸引的熵力作用能促使被溶剂疏远的含量多的组分择优聚集，形成以含量多的组分为核而含量少的组分为壳的类胶束球状相，随着聚合物浓度增大，这些球密堆积形成反转相。聚集过程之所以能够发生，是因为聚集引起的平移熵的增加补偿了由聚集导致的混合熵的减少。由于PS–b–PMMA的两嵌段组分有相近的玻璃化转变温度和本体模量，因此认为本论文中得到的反转相与嵌段组分的模量无关。随着浓度的增大，由于溶剂在两相区中离去的速度不同，使得反转球状相（IS）经历反转柱状相（IC）、反转的刺穿片层结构（IHPL）和片层结构（LAM）后又演变成正常柱状相（NC）结构。 通过控制不同的溶剂挥发速度，研究了溶剂挥发动力学对溶液浇注嵌段共聚物薄膜相行为的影响，发现当溶剂的挥发速度介于0.02和0.004 mL/h时，借助于溶剂快速挥发保留住的低聚合物浓度的溶液结构和造成的强表面剪切应变场，在膜上形成了一种新颖的环状结构。这种环状结构与两亲性嵌段共聚物在溶液中形成的环状结构有明显不同。 研究了溶液浇注超薄膜的相形态，发现薄膜边界条件强烈影响薄膜相结构的形成，但其所波及的范围只有从薄膜表面向膜内部延伸约一个结构周期的厚度。

Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques

In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic Vapour phase epitaxy on (001)GaAs substrates, which were intentionally off-oriented towards the [011]-direction. The substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. Several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. The reciprocal space maps clearly show a two-dimensional periodicity of the X-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. The distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. Our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well

Ultrathin single quantum well (about one monolayer) grown on GaAs(001) substrate with GaAs cap layer has been studied by high resolution x-ray diffractometer on a beamline of the Beijing Synchrotron Radiation Facility. The interference fringes on both sides of the GaAs(004) Bragg peak are asymmetric and a range of weak fringes in the higher angle side of the Bragg peak is observed. The simulated results by using the kinematical diffraction method shows that the weak fringe range appears in the higher angle side when the phase shift introduced by the single quantum well is very slightly smaller than m pi (m:integer), and vice versa. After introducing a reasonable model of single quantum well, the simulated pattern is in good agreement with the experiment. (C) 1996 American Institute of Physics.

Growth of GaAs on Si by using a thin Si film as buffer layer

We report a novel technique for growing high-quality GaAs on Si substrate. The process involves deposition of a thin amorphous Si film prior to the conventional two-step growth. The GaAs layers grown on Si by this technique using metalorganic chemical vapor deposition exhibit a better surface morphology and higher crystallinity as compared to the samples gown by conventional two-step method. The full width at half maximum (FWHM) of the x-ray (004) rocking curve for 2.2 mu m thick GaAs/Si epilayer grown by using this new method is 160arcsec. The FWHM of the photoluminescence spectrum main peak for this sample is 2.1 meV. These are among the best results reported so far. In addition, the mechanism of this new growth method was studied using high-resolution transmission electron microscopy.

PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER

Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorphous Si film as buffer layer. In this paper, the impurity properties of this kind of GaAs/Si epilayers have been studied by using PL spectrum, SIMS and Hall measurement. Compared to a typical PL spectrum of the GaAs/Si epilayers grown by conventional two-step method, a new peak was observed in our PL spectrum at the energy of 1.462 eV, which is assigned to the band-to-silicon acceptor recombination. The SIMS analysis indicates that the silicon concentration in this kind of GaAs/Si epilayers is about 10(18) cm(-3). But its carrier concentration (about 4 x 10(17) cm(-3)) is lower than the silicon concentration. The lower carrier concentration in this kind of GaAs/Si epilayer can be interpreted both as the result of higher compensation and as the result of the formation of the donor-defect complex. We also found that the high-quality and low-Si-concentration GaAs/Si epilayers can be regrown by using this kind of GaAs/Si epilayer as substrate. The FWHM of the X-ray (004) rocking curve from this regrowth GaAs epilayer is 118 '', it is much less than that of the first growth GaAs epilayer (160 '') and other reports for the GaAs/Si epilayer grown by using conventional two-step method (similar to 200 '').

Analog computation using quantum-dot cell network

A novel analog-computation system using a quantum-dot cell network is proposed to solve complex problems. Analog computation is a promising method for solving a mathematical problem by using a physical system analogous to the problem. We designed a novel quantum-dot cell consisting of three-stacked. quantum dots and constructed a cell network utilizing the nearest-neighbor interactions between the cells. We then mapped a graph 3-colorability problem onto the network so that the single-electron configuration of the network in the ground state corresponded to one of the solutions. We calculated the ground state of the cell network and found solutions to the problems. The results demonstrate that analog computation is a promising approach for solving complex problems.

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

中国急流牙甲族的系统学研究

急流牙甲族Sperchopsini属于鞘翅目Coleoptera牙甲科Hydrophilidae的水牙甲亚科Hydrophilinae，共包括五属，即水龟虫属 Hydrocassis、革牙甲属 Ametor、Sperchopsis、Anticura、Cylomissus，世界共计有25种，我国分布有2属18个种。 本文回顾了水甲虫、牙甲科以及急流牙甲族的研究简史；综述了水甲虫在分类学、保护生物学、形态学、遗传学、分子生物学等方面研究进展，总结了水甲虫与生态因子的关系以及水甲虫作为生态系统健康指示物的可行性。还简要介绍了昆虫分子系统学，以及细胞色素氧化酶亚基I（COI）和rDNA内部转录间隔区（ITS）在昆虫学研究中的应用。 通过对收集到的700余号急流牙甲族的标本观察和分类研究，发现了一新种（内蒙水龟甲Hydrocassis mongolica sp.nov.）。并且对已知全部种类重新作了描述，特别是长茎革牙甲 Ametor elongatus雄性外生殖器部分，首次对7个种类（长茎革牙甲 Ametor elongatus、粗革牙甲 Ametor scabrosus、帝水龟甲 Hydrocassis imperialis、伪舟水龟甲Hydrocassis pesudoscapha、条纹水龟甲Hydrocassis scapulata、舟水龟甲 Hydrocassi scapha、四川水龟甲Hydrocassis sichuana）的雌性个体进行了描述。编制了急流牙甲族的分属、分种检索表。 采用支序分类学的方法对中国急流牙甲族种类的系统发育关系进行探讨。结果显示革牙甲属内的A. latus、A. rudesculptus、A. rugosus 及A. scabrosus 构成单系（不包括A. elongates），支持皱革牙甲A. rugosus和A. latus属于革牙甲属。水龟虫属内H. anhuiensis、H. baoshanensis、H. lacustris、H. pseudoscapha、H. scaphoides、H. scapulata、H. sichuana、H. taiwana、H. uncinata、H. schillhammeri构成一个单系。水龟虫属包括两大类群，一类群包括H. anhuiensis、H. lacustris、H. scapulata、H. sichuana 、H. taiwana，另一类群包括H. baoshanensis、H. scaphoides、 H. schillhammeri 、H. uncinata。两类群的不同之处在于后一类群的阳基侧突上有一齿状凸起。 测序了H. scapulata、H. sichuana和H. mongolica雌雄各一个个体的COI和ITS2序列。全部的COI基因序列为828bp，编码275个氨基酸。H. scapulata的ITS2序列有446bp，H. sichuana的有456bp，H. mongolica的有455bp。用MEGA 3.1计算比对距离（pairwise distances）和构建邻近系统树。结果显示对于COI，种内的比对距离分别是0(H. scapulata)、0.008(H. mongolica)、0.004(H. sichuana)，种间的比对距离在0.024-0.045之间。对于ITS2，种内的比对距离分别为0.005(H. scapulata)、0(H. mongolica)、0.007(H. sichuana)，种间的比对距离在0.028-0.047之间。H. sichuana和新种间的比对距离在0.024-0.037(COI)和0.044(ITS2)。比对距离揭示出种内低于0.008，种间在0.024-1.078之间。因而，它们之间应该是种间关系而不是种内的关系。COI数据集和ITS2数据集所构建的系统树存在一定的差异，前者显示四川水龟甲和条纹水龟甲是姐妹种，后者显示新种和条纹水龟甲是姐妹种。总之，在内蒙古自治区发现的为一新的物种。

有机酸对砷在针铁矿表面吸附影响研究

砷（As）在自然环境下的迁移转化受到矿物质尤其是铁氧化物吸附过程的制约,大量溶解性有机酸影响了砷的吸附过程。 柠檬酸(CA)和As(Ⅴ)不同加入顺序实验表明CA抑制As(Ⅴ)吸附与其促进针铁矿溶解有关。当CA首先加入时，吸附体系溶解铁浓度为~0.3mmol/L，As(Ⅴ)吸附量随初始浓度增加在0.004~0.10mmol/g针铁矿之间；As(Ⅴ)先加入体系，溶解铁浓度为~0.16mmol/L，As(Ⅴ)吸附量在0.007~0.12mmol/g针铁矿之间。为进一步考察有机酸溶解作用对As(Ⅴ)吸附影响，本研究比较了在柠檬酸(1.0 mM)、草酸(1.5 mM)和乙酸(3.0 mM)与As(Ⅴ)共存条件下砷吸附变化和针铁矿溶解状况，结合三种有机酸引起针铁矿表面等质子状态点迁移结果认为：草酸促进针铁矿溶解趋势强于柠檬酸，而抑制砷吸附程度低于柠檬酸，可归因于小分子量有机酸抑制砷吸附是竞争表面位与溶解作用协同作用的结果。 在酸性区域，CA和As(Ⅴ)共存导致二者在针铁矿表面吸附量分别下降28%和29%左右，这与二者在针铁矿表面发生竞争吸附作用有关。在碱性区域，As(Ⅴ)吸附不受CA存在的影响；CA则随加入顺序不同存在明显差异：As(Ⅴ)先于CA加入的体系，CA严重下降达75%左右，而当CA先加入时，As(Ⅴ)的后续加入导致CA吸附少量升高。As(Ⅴ)对CA在碱性区域的影响与二者随pH变化吸附模式不同有关。 本研究采用平衡透析的方式研究了砷在腐殖酸和针铁矿之间的迁移转化问题。结果显示腐殖酸的存在影响了砷向针铁矿表面的迁移，且对As（Ⅴ）的影响比As（Ⅲ）更显著。在酸性区域，腐殖酸导致As（Ⅴ）在针铁矿表面分配系数降低最高可达70%左右；对As（Ⅲ）而言，腐殖酸在弱酸性、中性和弱碱性区域表现出最大抑制效应，As（Ⅲ）分配系数的降低在10%左右。

文冠果壳苷提取工艺的研究

文冠果为我国独有的油料树种，研究发现，文冠果壳乙醇提取物具有良好的促智作用，文冠果壳苷（Xanthoceracide）为齐墩果烷型五环三萜皂苷，是文冠果壳乙醇提取物中活性最强的物质。大量的药效学实验证明其具有显著改善多种记忆障碍模型小鼠的学习能力，提高大脑的缺氧耐受能力，预防并治疗多发性栓塞引起的记忆保持障碍，降低谷氨酸造成的PC12细胞死亡数量，增强对神经细胞的保护作用；数例临床试验中，一些记忆力严重减退导致生活不能自理的老年人以及智力低下的儿童服用文冠果壳提取物或文冠果壳苷后，也有明显的康复效果或治疗效果；而急性毒性试验进一步证实，这些天然产物毒性低，仅仅1/50的LD50用量就能表现出明显的改善记忆障碍作用，这预示着文冠果壳乙醇提取物将有可能开发成有效的老年痴呆症特效药。 本研究采用薄层层析法（TLC）对文冠果壳提取物中的文冠果壳苷进行定性鉴别。显色剂为10%硫酸乙醇，操作方法简便，斑点清晰，Rf适中，重现性良好。采用分光光度法对文冠果壳总皂苷含量进行测定。用文冠果壳苷作为对照品，测定波长为546 nm，文冠果壳苷含量在0.004 mg·mL-1~0.02 mg·mL-1（r=0.9998）呈现良好的线性关系，方法检验合格。采用高效液相色谱法（HPLC）对文冠果壳苷进行含量测定，文冠果壳苷含量在0.02 mg·mL-1~0.2 mg·mL-1（r=0.9992）范围内线性关系良好，方法检验合格。 采用溶剂提取法，大孔吸附树脂分离，有机溶剂萃取，硅胶柱层析分离，结晶与重结晶等方法相结合，得到纯度达98.5%的文冠果壳苷，可作标准品为开发利用文冠果壳提供依据。 以出膏率和文冠果壳苷含量为考察指标，分别考察提取次数、提取温度、乙醇浓度、料液比以及提取时间等因素对提取效果的影响。采用正交试验优化文冠果壳苷的溶剂提取工艺，最终确定提取工艺为：用70%乙醇提取，料液比为1/7（W／V），提取时间为5 h，提取温度为60 ℃，提取次数为2次。采用中试放大试验验证该工艺条件，结果表明，该提取工艺简单，易操作，提取效果较好，具有较好的应用前景。