基于景观格局变化评价的梯级水电开发规划方案研究

根据景观生态学理论,借助地理信息系统工具,采用定量的方法分析工程景观格局状况,通过建立水电开发建设规划方案的景观格局变化评价的指标体系和评价方法,研究水电开发规划方案对区域景观格局的影响。本方法应用于黄河上游黑山峡河段水电开发建设方案析分析。结果表明:不同规划方案实施后对原有生态环境均产生了一定影响。通过对不同方案与研究区域生态现状进行灰色关联分析,红山峡、五佛、小观音和大柳树4个坝址均修建低坝的方案的景观格局指数最高,研究区域景观生态风险最小。最终确定该方案为最优方案,该方案对区域原有生态体系性质和功能影响较小。

黄土高原水土保持政策演变

水土保持政策是指导和促进水土保持开展的主要社会驱动力之一。新中国成立以来,黄土高原水土保持经过探索治理、重点治理、全民治理、小流域综合治理和预防为主、依法防治等5个阶段。在不同阶段,水土保持目标和任务、治理主体、政策的针对性和治理主导措施侧重等均有变化。在分析政策演变的基础上,提出了针对新时期水土保持特点的政策建议。

黄河中游地区年径流对土地利用变化时空响应分析

以黄河中游河龙区间为研究区,以水土流失综合治理及生态环境建设导致的土地利用/覆被变化为背景,采用非参数统计法,基于区内38个水文站20世纪50年代至2000年水文数据,分析流域年径流对土地利用/覆被变化响应的时空变异特征,估算影响因素贡献率。结果表明:其中29条流域年径流量呈显著减少趋势,变率为0.17~2.61 mm/a;28条流域年径流量具有显著跃变时间,无定河流域各水文站跃变时间多在1970—1973年间,其余则多为1978—1985年,最晚为1994年;在5%、50%和95%的发生频率上,跃变前后时段年径流量减少幅度以30%~60%普遍,最大分别为73.2%、63.5%和69.7%;河龙区间整体呈显著减少趋势,变率为0.79 mm/a,跃变时间发生在1979年,3个频率上的减少幅度分别为46.5%、42.4%和24.1%。估算的11条流域中有9条土地利用/覆被变化等人类活动对流域径流减少影响程度超过50%。水土保持措施面积的增加,尤其淤地坝等水利水保工程措施的持续修建,对区域地表径流变化具有明显影响。

黄土高原六盘山生态经济圈功能区规划研究

六盘山区位于黄河中上游,是黄土高原西部天然生态屏障和水源涵养区,在中国生态环境建设中具有重要战略地位。本区土地资源丰富,生态环境洁净,旱作农业潜力大,草畜业兴旺。六盘山生态经济圈规划了4个功能区和7大特色农业基地产业,以六盘山国家自然保护区为中心,加大退耕造林种草与管护力度,到2015年基本修复六盘山区受损的森林生态系统和灌丛草原植被;以旱作农业技术体系为支撑,建立高效可持续发展的生态农业系统和绿色农牧产品基地,为经济社会发展和新农村建设提供良好的生态环境和农业基础。

合成方法对几种稀土发光材料的形貌及发光性能的影响

分别采用喷雾热解法、溶胶-凝胶法、共沉淀法和固相法合成了Y<,3>Al<,5>O<,12>:Eu<'3+>发光粉,并且比较了不同方法制备的发光粉的结晶过程和发光性质.通过比较我们发现,与其他三种方法相比,喷雾热解法结晶温度低、合成的发光粉具有球形形貌、且发光强度较大,是一种比较理想的合成发光粉的方法.

溶胶-凝胶软石印法制备稀土发光薄膜及其图案化

利用溶胶-凝胶法合成了一系列稀土离子掺杂的发光薄膜，包括三元氧磷灰石稀土硅酸盐Ca2RS（SiO4）6O2（R＝YGd）体系，YVO4体系，LaPO4体系以及钒磷酸盐形成的固熔体体系1并研究了稀土离子Eu3+，Tb3+，Dy3+，Sm3+，Er3+和类汞离子Pb2＋在这些薄膜中的发光性质和能量传递性质。同时利用软石印法结合毛细管微模板技术实现了发光薄膜的图案化。SEM以及AFM结果表明，利用溶胶一凝胶法制备的发光薄膜表面致密均匀，无开裂。通过增加镀膜溶液的粘度、镀膜的次数可以有效的控制薄膜的厚度，使其达到理想的范围。由此可见溶胶一凝胶法是一种比较理想的制备发光薄膜的方法。在三元氧磷灰石稀土硅酸盐Ca2R8（SiO4）6O2（R＝YGd）体系中，稀土离子Eu3+，Tb3+在Ca2Y8（SiO4）6O2基质中占据低刘·称性格位6h（Cs）和4f（C3），并以其特征的红光发射（5Do-7F2）和绿光发射（5D4-7F5）为主。Eu3+，Tb3+发光的最佳浓度分别为Y3+的10mol％和6mol％，Ca2Y8（51O4）6O2:Eu3＋薄膜样品的发光强度和寿命随着烧结温度的升高而增加，Ca2Y8（SiO4）6O2:Tb3+薄膜样品的发光强度和寿命在800℃时最大，随后又随烧结温度的升高有所下降，Pb2＋可以敏化Ca2Gd8（SiO4 ）6O2中Gd3+的基质晶格，通过Pb2＋→Gd3十→（Gd3＋）n→A3＋形式传递和转移能量。在YVO4体系中，利用Pechini溶胶一凝胶法以无机盐为主要原料，柠檬酸为络合剂，利用聚乙二醇调节镀膜溶液的粘度，制备了YvO4:A（A＝Eu3＋ Dy3＋，Sm3＋，Er3＋）纳米发光薄膜。结合软石印法，通过简单工艺实现了发光薄膜图案化烧结过程中图案化薄膜有一定程度的收缩，存在一定的缺陷。得到的条纹在紫外灯下发出明亮的红光。掺杂的稀土离子在YVO4薄膜中显示它们特征发射，同时VO43-和稀土离子之间存在能量传递。Dy3＋，Sm3＋，Er3十发光的最佳浓度皆为Y3+的2mol％，这三者的发光淬灭是由交叉驰豫引起的。在LaPO4发光薄膜中，Etl3+以591nm的5Do-7Fl跃迁发射为主，呈现红橙光；Tb3＋以543nm的5D4-7F5发射为主，属于绿光发射。Ce3＋则由其特有的5d-4f双峰发射组成。Tb3＋和Eu3+掺杂的样品发光强度和荧光寿命随烧结温度的升局而增加。Tb3+和Eu3+的寿命曲线符合指数衰减，但Tb3十在LaPO4:Ce，Tb薄膜中，所得的寿命曲线不符合单指数衰减。Ce3+和Tb3+之间存在吸收能量传递。通过计算得到能量传递效率可以达到95％以上。XRD结果表明，从x＝0到x＝1 YVxP1-xO4:Eu3+薄膜形成了一系列具有错石结构的固熔体。在YVxP1-xO4:Eu3+（0≤x≤1）系列薄膜中，随着x值的增加，Eu3+的发光强度和红橙比逐渐增大。除x＝0，其它的Eu3+的红橙比都大于1，说明在发射光谱中，以Eu3+禁戒5Do一7F2电偶极跃迁为主，Etls十在基质中处于低对称性格位。当x＝0时，即Y0.98Eu0.l2PO4薄膜中，Eu3+，仍处于D2d低对称性格位，但5D0一7FI橙光发射却比SD0一7F2红光发射强。x对Y0.98Eu0.02VxP1-xO4（0≤x≤l）薄膜寿命曲线有很大的影响，当0≤x≤0.5时，Eu3+5 D0-7F2发射呈单指数衰减；当x≥0.6时，Eu3+5D0-7F2发射的衰减曲线比较复杂，不能用单指数拟合。YVxP1-xO4:A3＋（0≤x≤1，A＝Er，Sm）薄膜中，由于存在VO43-A3+，以及VO43-（VO43-）n-A3+（n≥1）形式的能量传递，同时由于浓度淬灭，VO43-的蓝光发射在0.1≤x≤1范围内，随x的增加而减弱，当x＝1时，VO43-的蓝光发射被完全淬灭，而A3+发光强度随x的增加而增加。在RVO4:A3+（R＝Y，La，Gd，A＝Eu，Sm，Er）纳米发光薄膜中，R对稀土离子发光性质的影响主要是由于基质晶体结构的不同。A3+在YVO4和GdVO4中属于D2d对称性，在YVO4和GdVO4薄膜中A3+的光谱性质基本相同，而LaVO4属于单斜晶系，具有独居石结构。A3+在LaVO4中属于C1对称性。C1对称性比D2d对称性低，A3+的发光光谱中谱线的位置以及谱线的劈裂数目都略有不同。由于Gd3+和发光离子之间的能量传递，A3+在GdVO4基质中的发光最强。

溶胶-凝胶软石印法制备硅酸盐发光薄膜及其图案化

利用瑞利波信息反演层状半空间介质的性质和状态，是地震勘探、岩土工程、及超声检测领域关注的研究课题。本文由层状半空间瑞利波的实验数据，分析给出了层状半空间中瑞利波的传播模式和频散曲线，并进而利用基阶和（或）高阶模式瑞利波频散曲线反演了层状介质参数。本文分别用数值模拟和实验分析进行了深入的研究。在数值模拟中，采用地震勘探中常用的爆炸点源激发产生的瑞利波，利用频率波数分析方法分析了层状半空间瑞利波的频散，考察了源检距，道间距，接收道数目等因素对频散曲线的影响，给出了这些参数的定量要求。研究表明频率波数分析方法得到的频散曲线和按激发强度占主导的模式随频率的变化而形成的跳跃频散曲线一致。对于速度递增的层状半空间，反演时可以仅考虑基阶模式的瑞利波频散曲线，对于含有低速层的层状半空间，则必须考虑模式跳跃后形成的“之”字形频散曲线。在用遗传算法反演介质参数时，也必须考虑激发强度占主导地位的模式随频率的变化，从而恰当地设计目标函数，才能得出对层状介质参数的正确反演。在超声实验中，用表面圆形法向力源激发的瑞利波，对三个层状半空间模型，即均匀半空间，速度递增的两层半空间，含低速层的三层半空间，利用我们实验室自行研制的数字式多通道发射和接收系统，进行了超声探测实验。通过对实验得到的多道瑞利波信号，利用频率波数分析的方法得到了和理论结果一致的实验频散曲线，并基此利用遗传算法实现了层状介质参数的正确反演，得到了和实际介质参数相符的反演结果。数值模拟和实验研究的结果均表明，由实验数据正确给出频散曲线和相应的采用遗传算法发展的适合层状半空间介质的反演方法，是一种优良的反演方法，一般可以找到全局的最优解。获得介质性状较好反演结果的原因，是因为我们首次考虑到了由激发强度决定的占主导地位的模式随频率的变化规律，对应地我们建立了爆炸点源和表面法向力源激发下，分层半空间多模瑞利波模式分析及频散曲线获取和介质参数反演的系统方法。此外，本文最后为了与频率波数分析的结果进行对比，研究了时频分析方法一魏格纳维尔分布，用数值模拟和实验结果分析了层状介质中瑞利波的频散曲线。结果表明时频分析方法获得的频散曲线不及多道频率波数分析得到的瑞利波频散曲线准确。不过由于时频分析仅需要一个接收道的数据就能给出结果，比多道频率波数分析方法要简便，如果能对此方法加以改进，还是一种具有前景的分析方法。总的来说，本文系统地给出了用瑞利波反演分层半空间介质性质和层厚的方法，并给出了相应的软件。数值模拟和实验研究表明，本文给出的建立在严格理论基础上的方法，为用瑞利波探测地层和超声探测层状介质，奠定了可靠的基础。在此基础上，进一步发展相应的系统解释软件，可望能提供给地层勘探，层状材料和薄膜的超声探测等领域应用。

A colorimetric assay for screening microcystin class compounds in aquatic systems

Secondary metabolites produced by water-blooming cyanobacteria in eutrophic waters include some potent hepatotoxins, These compounds also have tumour-promoting properties, attributable to their inhibition and activation of protein phosphatases and kinases respectively. The inhibitory effect of these toxins on protein phosphatases have been employed in a commonly used radiometric assay, involving the use of a P-32-labeled substrate, for the detection and quantitation of these compounds. This paper investigates and describes a colorimetric method in which the activity of protein phosphatase 2A is determined by measuring the rate of colour production from the release of yellow p-nitrophenol using p-nitrophenyl phosphate as the substrate. Results of this study suggest that the colorimetric protein phosphatase inhibition assay is a simple, inexpensive tool for screening substances that may have tumour-promoting characteristics in aquatic systems. The detection limit of the colorimetric method is comparable to the radiometric assay. (C) 1998 Elsevier Science Ltd. All rights reserved.

Electron migration in BaFCl:Eu2+ phosphors

Here we report the electron migration by photo- or thermostimulation in BaFCl:Eu2+. Electrons released from F centers may be trapped by other defect sites to form F aggregates or another type of F center and vice versa. This migration reduces the photostimulated luminescence efficiency, lowers the imaging plate sensitivity, and causes the difference between the optical absorption and photostimulation spectra of color centers. (C) 1997 American Institute of Physics.

Structural and Optical Performance of GaN Thick Film Grown by HVPE

Thick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum（FWHM）of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.

Persistent Photoconductivity in n-type GaN

The persistent photoconductivity（PPC） phenomena in n-type GaN Films grown by metalorganic chemical vapor deposition（MOCVD） have been studied. After using some testing and analysis methods, such as the double crystal X-ray diffraction（DCXRD）, the photolumineseence（PL） spectra, etc, it is found that the issue which influences PPC in n-type GaN is not relative to the dislocations and yellow band （YB）, and is caused by the doping level of Si most likely.

Photoluminescence from carbon nanotubes

We observed yellow colored light emission bands from multiwalled carbon nanotubes in photo-luminescence (PL) experiments. The light emission band features indicate that the PL bands are associated with the electronic properties inherent to the carbon nanotube (CNT) structures.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Influence of precipitates on GaN epilayer quality

GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.