Tin (IV) phthalocyanine oxide: An air-stable semiconductor with high electron mobility

Air-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (IV) phthalocyanine oxide (SnOPc), as active layers. The SnOPc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) V-1 s(-1). After storage in air for 32 days, the mobility and on/off ratio did not obviously change. The above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system.

Phthalocyanato tin(IV) dichloride: An air-stable, high-performance, n-type organic semiconductor with a high field-effect electron mobility

Phthalocyanato tin(IV) dichloride, an axially dichloriniated MPc, is an air-stable high performance n-type organic semiconductor with a field-effect electron mobility of up to 0.30 cm(2) V-1 s(-1). This high mobility together with good device stability and commercial availability makes it a most suitable n-type material for future organic thin-film transistor applications.

Glass wafers bonding via Diels-Alder reaction at mild temperature

In this paper, we introduced a novel bonding method of glass wafers by Diels-Alder reaction at mild temperature. After standard hydroxylization and aminosilylation, two wafers were modified by 2-furaldehyde and maleic anhydride, respectively. Then they were brought into close contact and tightly held with a clamping fixture. A strong bonding could be achieved by annealing for 5 h at 200 degrees C. Bonding strength is as high as 1.78 MPa and sufficient for most application of microfluidic chips.

Weak epitaxy growth of organic semiconductor thin films

The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review-which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials-summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films.

Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold

A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.

Blue amplified spontaneous emission from 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer with high photoluminescence efficiency

The amplified spontaneous emission properties of a 2, 1, 3-benzothiadiazole attached polyfluorene semiconductor polymer were studied. The conjugated polymer shows a high photoluminescence quantum efficiency of 67% and emits a narrowed blue emissive spectrum with a full width at half-maximum of 3.6 nm when optically pumped, indicating better lasing action. A threshold energy as low as 0.22 mJ pulse(-1) cm(-2), a net gain of 40.54 cm(-1) and a loss of 7.8 cm(-1) were obtained, demonstrating that this conjugated polymer could be a promising candidate as the gain medium for the fabrication of blue polymer lasers.

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

Charge ordering induced metal-semiconductor transition in Ag2BiO3: A first-principles study

Accurate ab initio density-functional calculations are performed to investigate the relationship of the ground-state crystal structures and electronic properties of Ag2BiO3 compound. The results indicate that Ag2BiO3 in Pnna phase, in which the bismuth atoms occupy the same Wyckoff positions, exhibits metallic conductivity, while in Pnn2 and Pn phases, Ag2BiO3 exhibits semiconducting character, which is in agreement with the experimental results. Charge ordering is indeed induced by the crystal inversion twin in the Pnn2 phase compared with the Pnna phase. In the low temperature phase Pn, the charge ordering is similar to that of Pnn2 phase although it is more distorted in Pn phase. In addition, the calculation indicates that the charge ordering is caused in the 6s electron rearrangement.

Bonding quartz wafers by the atom transfer radical polymerization of the glycidyl methacrylate at mild temperature

In this paper, we presented a novel covalent bonding process between two quartz wafers at 300 degrees C. High-quality wafer bonding was formed by the hydroxylization, aminosilylation and atom transfer radical polymerization (ATRP) of glycidyl methacrylate (GMA), respectively, on quartz wafer surfaces, followed by close contact of the GMA functional wafer and the aminosilylation wafer, the epoxy group opening ring reaction was catalyzed by the amino and solidified to form the covalent bonding of the quartz wafers. The shear force between two wafers in all bonding samples was higher than 1.5 MPa. Microfluidic chips bonded by the above procedures had high transparency and the present procedure avoided the adhesive to block or flow into the channel.

Naphthyl end-capped quarterthiophene: A simple organic semiconductor with high mobility and air stability

An organic semiconductor that can be mass produced is synthesized by end-capping quaterthiophene with naphthyl units (NaT4). An organic thin-film transistor (OTFT, see figure) has been fabricated using this organic semiconductor, and exhibits stability under ambient conditions with a mobility of up to 0.40 cm(2) V-1 s(-1).

Semiconductor "nano-onions" with multifold alternating CdS/CdSe or CdSe/CdS structure

"Nano-onions" with multifold alternating CdS/CdSe or CdSe/CdS structure have been synthesized via a two-phase approach. The influences of shell on photoluminescence (PL) quantum yields (QYs) and PL lifetimes are investigated and discussed. It is found that the outmost shell plays an important role in the PL QYs and PL lifetimes of the multishells "onion-like" nanocrystals. The PL QYs and PL lifetimes fluctuate regularly with CdSe and CdS shells. The PL QY increases when the nanocrystals have an outmost CdS shell; however, it decreases dramatically with the outmost CdSe shell. The trend of the change of PL lifetimes is consistent with that of the QYs. The crystal structure and composition of the novel nano-onions are characterized by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectra techniques.

Well-organized structures of ZnS semiconductor nanocrystals using amphiphilic triblock copolymer aggregates as templates

Ring- and rod-shaped P4VP-b-PS-b-P4VP ( PS, polystyrene; P4VP, poly( 4-vinylpyridine)) triblock copolymer aggregates are used as templates to synthesize ZnS nanocrystals. Herein, PVP serves as both a stabilizing agent and a structure- directing agent. The resulting ZnS nanocrystals could be aligned along the corona of the copolymer aggregates in near-perfect structures through control of both the molar ratio of Zn2+ to P4VP and the reaction time. The diameter of the as-synthesized ZnS layer on the surface of polymer template is approximate 2 - 3 nm. High-resolution transmission electron microscopy images reveal that the ZnS particles are single crystal in a zinc blende structure. This method provides a simple, reproducible route at room temperature to prepare assembled hybrid polymer - semiconductor nanocrystal nanocomposites.