Effects of solar UV radiation on morphology and photosynthesis of filamentous cyanobacterium Arthrospira platensis

To study the impact of solar UV radiation (UVR) (280 to 400 nm) on the filamentous cyanobacterium Arthrospira (Spirulina) platensis, we examined the morphological changes and photosynthetic performance using an indoor-grown strain (which had not been exposed to sunlight for decades) and an outdoor-grown strain (which had been grown under sunlight for decades) while they were cultured with three solar radiation treatments: PAB (photosynthetically active radiation [PAR] plus UVR; 280 to 700 nm), PA (PAR plus UV-A; 320 to 700 nm), and P (PAR only; 400 to 700 nm). Solar UVR broke the spiral filaments of A. platensis exposed to full solar radiation in short-term low-cell-density cultures. This breakage was observed after 2 h for the indoor strain but after 4 to 6 h for the outdoor strain. Filament breakage also occurred in the cultures exposed to PAR alone; however, the extent of breakage was less than that observed for filaments exposed to full solar radiation. The spiral filaments broke and compressed when high-cell-density cultures were exposed to full solar radiation during long-term experiments. When UV-B was screened off, the filaments initially broke, but they elongated and became loosely arranged later (i.e., there were fewer spirals per unit of filament length). When UVR was filtered out, the spiral structure hardly broke or became looser. Photosynthetic 0, evolution in the presence of UVR was significantly suppressed in the indoor strain compared to the outdoor strain. UVR-induced inhibition increased with exposure time, and it was significantly lower in the outdoor strain. The concentration of UV-absorbing compounds was low in both strains, and there was no significant change in the amount regardless of the radiation treatment, suggesting that these compounds were not effectively used as protection against solar UVR. Self-shading, on the other hand, produced by compression of the spirals over adaptive time scales, seems to play an important role in protecting this species against deleterious UVR. Our findings suggest that the increase in UV-B irradiance due to ozone depletion not only might affect photosynthesis but also might alter the morphological development of filamentous cyanobacteria during acclimation or over adaptive time scales.

New data on the morphology and systematic status of Spinitectus petrowi and Spinitectus gigi (Nematoda : Cystidicolidae) parasitic in catfishes in central China

Two little-known nematode species of the genus Spinitectus Fourment, 1883, S. petrowi Belous, 1965 (prevalence 25%, intensity 1-8) and S. gigi Fujita, 1927 (prevalence 10%, intensity 2-3), were collected from the gastrointestinal tract of the yellow catfish, Pelteobagrus fulvidraco (Richardson), from Liangzihu Lake, Hubei Province, central China, in September of 2002. The light and scanning electron microscopical examination of this material, supplemented by a few museum specimens of S. gigi collected from the catfish Clarias fuscus (Lacepede) in southern China, made it possible to study in detail the morphology of these parasite species and to redescribe them. The first species, whose correct name is S. petrowi Belous, 1965, exhibits some morphological features (e.g., unusually short vestibule, shape of pseudolabia and of the left spicule) not found in most other congeners; a unique feature is the presence of peculiar pairs of transversely oriented peg-like cuticular spines with rounded ends on the ventral surface of the female tail. Spinitectus gigi was found to have 28-31 cuticular spines in the first ring, relatively long distances between the 2nd-7th rings of spines, and anterior rings divided into 2 sectors; the excretory pore is located at the level of the 4th ring of cuticular spines; males posses 4 pairs of preanal- and 6 pairs of postanal caudal papillae and a pair of small phasmids. Spinitectus bagri Wang, Wu et Yu, 1993 and S. wulingensis Yu et Wang, 1997 are considered junior synonyms of S. petrowi, whereas S. clariasi Ky, 1971, S. ophicephali Ky, 1971 and S. yuanjiangensis Wang, Wit et Yu, 1997 are regarded to be junior synonyms of S. gigi. Spinitectus petrowi was not previously reported from China.

Structural evolution of mechanically alloyed nanocrystalline FeAl intermetallics

Nanostructured FeAl intermetallics were prepared directly by mechanical alloying (MA) in a high-energy planetary ball-mill. The phase transformations and structural changes occurring in the studied material during mechanical alloying were investigated by X-ray diffraction (XRD). Transmission electron microscopy (TEM) was employed to examine the morphology of the powders. Thermal behavior of the milled powders was examined by differential scanning calorimetry (DSC). Disordered Fe(Al) solid solution was formed at the early stage. After 30 h of milling, Fe(Al) solid solution transformed into an ordered FeAl phase. The average crystallite size reduction down to about 12 nm was accompanied by the introduction of the average lattice strain up to 1.7%. The TEM picture showed that the size of milled powders was less than 30 nm. (c) 2007 Elsevier B.V. All rights reserved.

Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles

The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors.

Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO2 matrix

A detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in a silicon-rich SiO2 matrix is reported. The PL spectra consist of three Gaussian bands (peaks A,B, and C), originated from the quantum confinement effect of Si NCs, the interface state effect between a Si NC and a SiO2 matrix, and the localized state transitions of amorphous Si clusters, respectively. The size and the surface chemistry of Si NCs are two major factors affecting the transition of the dominant PL origin from the quantum confinement effect to the interface state recombination. The larger the size of Si NCs and the higher the interface state density (in particular, Si = O bonds), the more beneficial for the interface state recombination process to surpass the quantum confinement process, in good agreement with Qin's prediction in Qin and Li [Phys. Rev. B 68, 85309 (2003)]. The realistic model of Si NCs embedded in a SiO2 matrix provides a firm theoretical support to explain the transition trend.

Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)

The strain evolution in metal organic chemical vapor deposition growth of GaN on Si (111) substrate with an AlN interlayer is studied. During the growth of GaN film on AlN interlayer, the growth stress changes from compression to tension. The study shows that the density of V trenches in the AlN interlayer surface and the threading dislocations generated in the AlN interlayer have a significant influence on this strain evolution process. The dislocations generated in AlN interlayer may thread across the interface and play a key role in the strain evolution process of the GaN layer grown on AlN interlayer.

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

The effects of growth temperature on the bimodal size distribution of InAs quantum dots on vicinal GaAs(100) substrates grown by metal organic chemical vapor deposition are studied. An abnormal trend of the bimodal size evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then exhibits a sudden decrease at 535 degrees C. The trend is explained by taking into account the presence of multiatomic steps on the substrates. Photoluminescence (PL) studies show that quantum dots on vicinal substrates have a narrower PL linewidth, a longer emission wavelength, and a larger PL intensity than those of the dots with exact substrates. (c) 2006 American Institute of Physics.

Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots

By using reflectance difference spectroscopy we have studied the in-plane optical anisotropy of GaAs surfaces covered by ultrathin InAs layers. The strain evolution of the GaAs surface with the InAs deposition thickness can be obtained. It is found that the optical anisotropy and the surface tensile strain attain maximum values at the onset of the formation of InAs quantum dots (QDs) and then decrease rapidly as more InAs QDs are formed with the increase of InAs deposition. The origin of the optical anisotropy has been discussed.

Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

Statistical investigation on morphology development of gallium nitride in initial growth stage

Morphology of Gallium Nitride (GaN) in initial growth stage was observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM), It was found that the epilayer developed from islands to coalesced film. Statistics based on AFM observation was carried out to investigate the morphology characteristics. It was found that the evolution of height distribution could be used to describe morphology development. Statistics also clearly revealed variation of top-face growth rate among islands. Indium-doping effect on morphology development was also statistically studied. The roughening and smoothing behavior in morphology development was explained. (C) 2002 Elsevier Science B.V. All rights reserved.

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs(311)A substrates

The formation of triangular-shaped dot-like (TD) structures grown by molecular beam epitaxy on GaAs (311)A substrates patterned with square- and triangular-shaped holes is compared. On substrates patterned with square-shaped holes, TD structures are formed via the pinch-off of two symmetrically arranged {111} planes which develop freely in the regions between the holes on the original substrate surface, while the (111)A sidewalls of the as-etched holes develop a rough morphology during growth. The evolution of the rough ( 1 1 1)A sidewalls is eliminated on substrates patterned with triangular shaped holes resulting in similar TD structures with highly improved uniformity over the entire pattern. Spectrally and spatially resolved cathodoluminescence spectroscopy reveals the lateral variation of the quantum-well confinement energy in the TD structures generating distinct lateral energy barriers between the top portion and the nearby smooth regions with efficient radiative recombination. Formation of TD structures provides a new approach Do fabricate three-dimensionally confined nanostructures in a controlled manner.

Morphology and wetting layer properties of InAs/GaAs nanostructures

In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Surface Initiated Polymerization from Substrates of Low Initiator Density and Its Applications in Biosensors

Surface initiated polymerization (SIP) has become an attractive method for tailoring physical and chemical properties of surfaces for a broad range of applications. Most of those application relied on the merit of a high density coating. In this study we explored a long overlooked field of SIP. SIP from substrates of low initiator density. We combined ellipsometry with AFM to investigate the effect of initiatior density and polymerization time on the morphology of polymer coatings. In addition, we carefully adjusted the nanoscale separation of polymer chains to achieve a balance between nonfouling and immobilization capacities. We further tested the performance of those coating on various biosensors, such as quartz crystal microbalance, surface plasmon resonance, and protein microarrays. The optimized matrices enhanced the performance of those biosensors. This report shall encourage researches to explore new frontiers in SIP that go beyond polymer brushes.