三种海洋红藻和两株放线菌次级代谢产物研究

海洋是一个巨大的天然产物宝库，约占地球表面积70%的海洋蕴藏着80%的生物资源。由于海洋生态环境的特殊性，导致海洋生物能够产生大量结构独特多变和活性特殊多样的代谢产物。我国海域辽阔，海洋资源丰富，为寻找结构新颖、生理活性独特的先导化合物，加强对海洋资源的开发利用，本论文对中国沿海的三种海洋红藻和两株放线菌次生代谢产物以及生物活性进行研究，为新药研究与开发提供模式结构和药物前体。 对红藻似瘤凹顶藻Laurencia similis乙酸乙酯萃取物进行分离纯化，从中得到单体化合物35个，通过波谱学方法（IR、MS、NMR等）鉴定了他们的结构。分别为：2, 2, 5, 5, 6, 6-sixibromo-3, 3-bi-1H-indole (1)，3,5-dibromo- 1-methyl-indole (2)，3',5',6,6'-tetrabromo-2,4-dimmethyldiphenyl ether (3)，1,2,5- tribromo-3-bromoamino-7-bromomethylnaphthalene (4)，2,5,8-tribromo-3-bromo- amino-7-bromomethylnaphthalene (5)，2,5,6-tribromo-3-bromoamino-7-bromo- methylnaphthalene (6), 2,5,6,5',6'-pentabromo-3,4,3',4'-tetramethoxybenzophenone (7), (4E)-1-bromo-5-[(1'S*,3'R*)-3'-bromo-2',2'-dimethyl-6'-methylenecyclohexyl] -3-methylpent-4-ene-2,3-diol (8)，4-hydroxy-Palisadin C (9)，Isopalisol (10)，Luzonensol (11)，Palisadin B (12)，Aplysistatin (13)，Palisadin A (14)，5-Acetoxypalisadin B (15)，Aristolan-1(10)- en-9-ol (16)，Aristol-8-en-1-one (17)，Aristolan-9-en-1-one (18)，Aristolan-1(10)-en- 9-one (19)，Aristofone (20)，Aristolan-1(10)-8-diene (21)，Aristolan-1,9-diene (22)，10-Hydroxyaristolan-9-one (23)，7,11,15-trimethyl-3-methylene-hexadecan-1,2-diol (24)，3β-Hydroxyergosta- 5,24(28)-dien-7-one (25)，Isofucosterol (26)，β-sitosterol (27)，豆甾-4-烯-3α,6β-二醇 (28)，Cholesta-5-en-3β-ol (29)，Stigmasterol (30)，2,3,5,6-四溴-吲哚 (31)，2,3,6-tribromo-1H-indole (32)，3,5,6-tribromo-1-methylindole (33)，3,5,6-tribromo -1H-indole (34)，2,3,5-tribromo-1-methylindole (35)，其中化合物1-9为新化合物，化合物10-15、20和化合物24-30均为首次从该种海藻中得到。对新化合物1-9进行PTP1B酶抑制剂活性筛选，新化合物1、3、7显示强的PTP1B酶抑制活性。 对红藻齐藤凹顶藻Laurencia saitoi乙酸乙酯萃取物进行分离纯化，从中得到单体化合物11个，通过波谱学方法（IR、MS、NMR等）鉴定了他们的结构，分别为：2-hydroxyl-Luzofuranone (1)，2-hydroxyl-Luzofuranone B (2)，4-hydroxyl-Palisudin C (3)，2-bromo-γ-ionone (4)，Aplysistatin (5)，5-Acetoxypalisadin B (6)，Palisadin B (7)，Palisadin A (8)，Pacifigorgiol (9)，豆甾-4-烯-3α,6β-二醇 (10)，2, 3, 5, 6-四溴-吲哚 (11)，其中化合物1-4为新化合物，所有化合物均为首次从该种海藻中得到。通过MTT法对分离得到的新化合物1-4进行肿瘤细胞毒活性筛选，结果显示4个新化合物对所测肿瘤细胞株均无明显的活性。 对红藻瘤状软骨凹顶藻Chondrophycus papillous乙酸乙酯萃取物进行分离纯化，从中得到单体化合物5个，通过波谱学方法（MS、NMR等）鉴定了他们的结构，分别为邻苯二甲酸二丁酯 (1)，邻苯二甲酸二异辛酯 (2)，胆甾醇 (3)，3,7,11,15-tetramethyl-hexadec-2-en-1-ol (4)，4-羟基苯甲醛 (5)，所有化合物均为首次从该种海藻中得到。 对海洋放线菌M159乙酸乙酯萃取物进行分离纯化，从中得到单体化合物13个，通过波谱学方法（MS、NMR等）鉴定了他们的结构，分别为：5-(4',6'-dihydroxy-6-methyloctyl)furan-2(5H)-one (A)，phenethyl alcohol (1)，4-羟基苯甲醛(2)，anthranilic acid (3)，4-Hydroxy-3-methoxy- phenyl-propionic acid (4)，5-(6,7-dihydroxy-6-methyloctyl)furan-2(5H)-one (5)，p-Hydroxyphenylethyl alcohol (6)，3-Indoleacrylic acid (7)，Indol-3-carboxylic acid (8)，Adenine cordyceposide (9)，腺嘌呤核苷(10)，尿嘧啶核苷(11)，Thymidine (12)，其中化合物A为新化合物。所有化合物均为首次从该株放线菌中得到。 对海洋放线菌L211乙酸乙酯萃取物进行分离纯化，从中得到单体化合物15个，通过波谱学方法（MS、NMR等）鉴定了7个结构，分别为：spatozoate (1)，anthranilic acid (2)，3-Indolylethanol (3)，1-Acetyl-β-carbolin (4)，p-Hydroxyphen- ylethyl alcohol (5)，Indole-3-acetic acid (6)，Indol-3-carboxylic acid (7)，所有化合物均为首次从该株放线菌中得到。

石英砂在菱苦土磨具中的作用机理

本文利用物质结构与化学键的有关理论对石英砂的菱苦土磨具中的作用机理进行分析，并以实验对分析结果进行验证。结果表明：金刚砂晶体中Si-C共价键的离子性百分数仅为9％，石英晶体中Si-O共价键的离子性百分数为47％，因此，石英与主要以离子键结合的菱苦土结合剂之间有较强的静电作用力，石英与菱苦土的结合力强于金刚砂，可提高菱苦土磨具的耐磨性。

REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10(15)-10(16) cm-2. Subsequent rapid infrared thermal annealing was carried out at 850-degrees-C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation

HfO2 films were deposited by electron beam evaporation with different deposition parameters. The properties such as refractive index, weak absorption, and laser induced damage thresholds (LIDTs) of these films have been investigated. It was found that when pulsed Nd:YAG 1064 nm laser is used to investigate LIDT of films: Metallic character is the main factor that influences LIDTs of films obtained from Hf starting material by ion-assisted reaction, and films prepared with higher momentum transfer parameter P have fewer metallic character; The ion-assisted reaction parameters are key points for preparing high LIDT films and if the parameters are chose properly, high LIDT films can be obtained. (c) 2004 Elsevier B.V. All rights reserved.

Optical and electrical properties of TiOx thin films deposited by electron beam evaporation

The TiOx thin films were prepared by electron beam evaporation using TiO as the starting material. The effect of the annealing temperature on the optical and electrical properties was investigated. The spectra of X-ray photoelectron spectroscopy reveal that Ti in the films mainly exist in the forms of Ti2+ and Ti3+ below 400 degrees C 24h annealing. The charge transfer between different titanium ion contribute greatly to the color, absorption, and electrical resistance of the films. (c) 2006 Elsevier Ltd. All rights reserved.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The effect of ion-induced damage on GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy employing a DC plasma as the N source was investigated. Ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the X-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. It was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the QWs. The bandedge potential fluctuations for the samples grown with and without ion removal magnets (IRMs) are 44 and 63 meV, respectively. It was found that the N-As atomic interdiffusion at the interfaces of the QWs was enhanced by the ion damage-induced defects. The estimated activation energies of the N-As atomic interdiffusion for the samples grown with and without IRMs are 3.34 and 1.78 eV, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grown by molecular-beam epitaxy using a dc plasma as the N source. It was found that RTA at low temperature (LT, 650 degrees C) and high temperature (HT, 900 degrees C) could both improve the QW quality significantly. To clarify the mechanism of quality improvement by RTA, a magnetic field perpendicular to the path of the N plasma flux was applied during the growth of the GaInNAs layers for the sake of comparison. It was found that LT-RTA mainly removed dislocations at interfaces related to the ion bombardment, whereas, HT-RTA further removed dislocations originating from the growth. LT-RTA caused only a slight blueshift of photoluminescence peak wavelength, probably due to defect-assisted interdiffusion of In-Ga at the QW interfaces. The blueshift caused by HT-RTA, on the other hand, was much larger. It is suggested that this is due to the fast defect-assisted diffusion of N-As at the QW interfaces. As defects are removed by annealing, the diffusion of In-Ga at interfaces would be predominant. (C) 2000 American Institute of Physics. [S0003- 6951(00)01535-7].

Characterization of strain relaxation in As ion implanted Si1-xGex epilayers grown by gas source molecular beam epitaxy

Strain relaxation in the As ion implanted Si0.57Ge0.43 epilayers was studied by double-crystal x-ray diffractometry and transmission electron microscopy, and was compared to that in the nonimplanted Si0.57Ge0.43 epilayers. Experimental results show that after rapid thermal annealing (RTA) the x-ray linewidth of the As+-implanted Si0.57Ge0.43 epilayers is narrower than that of the nonimplanted epilayers, and than that of the partially relaxed as-grown samples, which is due primarily to low density of misfit dislocations in the As+-implanted SiGe epilayers. RTA at higher than 950 degrees C results in the formation of misfit dislocations for the nonimplanted structures, and of combinations of dislocations and precipitates (tentatively identified as GeAs) for the As+-implanted epilayers. The results mean that the strain relaxation mechanism of the As+-implanted Si1-xGex epilayers may be different from that of the nonimplanted Si1-xGex epilayers. (C) 1998 American Institute of Physics.