The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy

The physical properties of low-temperature-deposited GaN buffer layers with different thicknesses grown by metal-organic vapor-phase epitaxy have been studied. A tentative model for the optimum thickness of buffer layer has been proposed. Heavily Si-doped GaN layers have been grown using silane as the dopant. The electron concentration of Si-doped GaN reached 1.7 x 10(20) cm(-3) with mobility 30 cm(2)/V s at room temperature. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition

Fe-N films containing the Fe16N2 phase were prepared in a high-vacuum system of ion-beam-assisted deposition (IBAD). The composition and structure of the films were analysed by Auger electron spectroscopy (AES) and X-ray diffraction (XRD), respectively. Magnetic properties of the films were measured by a vibrating sample magnetometer (VSM). The phase composition of Fe-N films depend sensitively on the N/Fe atomic arrival ratio and the deposition temperature. An Fe16N2 film was deposited successfully on a GaAs (1 0 0) substrate by IBAD at a N/Fe atomic arrival ratio of 0.12. The gram-saturation magnetic moment of the Fe16N2 film obtained is 237 emu/g at room temperature, the possible cause has been analysed and discussed. Hysteresis loops of Fe16N2 have been measured, the coercive force H-c is about 120 Oe, which is much larger than the value for Fe, this means the Fe16N2 sample exhibits a large uniaxial magnetocrystalline anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Structural and PL properties of Cu-doped ZnO films

Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at similar to 380nm and a blue band centered at similar to 430nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zn-i) and Zn vacancy (V-Zn) level transition. A strong blue peak (similar to 435 nm) was observed in the PL spectra when the alpha(Cu) (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of alpha(Cu) and the sputtering power on the blue band was investigated.

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400 degrees C, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.

Synthesis and luminescence properties of hybrid organic-inorganic transparent titania thin film activated by in-situ formed lanthanide complexes

Stable transparent titania thin films were fabricated at room temperature by combining thenoyltrifluoroacetone (TTFA)-modified titanium precursors with amphiphilic triblock poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO-PPO-PEO, P123) copolymers. The obtained transparent titania thin films were systematically investigated by IR spectroscopy, PL emission and excitation spectroscopy and transmission electron microscopy. IR spectroscopy indicates that TTFA coordinates the titanium center during the process of hydrolysis and condensation. Luminescence spectroscopy confirms the in-situ formation of lanthanide complexes in the transparent titania thin film.

Dynamic mechanical properties of gel polymer electrolytes containing ionic liquid

The copolymer of acrylonitrile (AN), methyl methacrylate (MMA) and poly(ethylene glycol) methyl ether methacrylate (PEGMEMA) is synthesized in 1-butyl-3-methylimidazolium tetrafluoroborate (BMImBF(4)). The dynamic mechanical properties of the resulting gel polymer electrolytes containing ionic liquid are measured.

Hydrothermal synthesis and thermoelectric transport properties of impurity-free antimony telluride hexagonal nanoplates

Impurity-free single-crystalline antimony telluride hexagonal nanoplates (see figure) are synthesized by a facile and quick hydrothermal treatment without any organic additives or templates. The inherent crystal structure is the driving force for the growth of these Sb2Te3 hexagonal nanoplates. Films of these nanoplates shows p-type behavior, and exhibit a promisingly high Seebeck coefficient of 425 mu V K-1 at room temperature.

Preparation, structure and dielectric properties of (Ba1-xSrx)(2)NaNb5O15 ceramics

In this study the tungsten-bronze type tetragonal (Ba1-xSrx)(2)NaNb5O15 system as a kind of lead-free ferroelectric ceramics has been synthesized by low-temperature combustion method. Microstructure and dielectric properties of (Ba1-xSrx)(2)NaNb5O15 system were also investigated. X-ray diffraction (XRD) study confirms the formation of single-phase tetragonal compounds in the crystal system at room temperature. The TEM photograph shows that the particles synthesized by low-temperature combustion method are uniform with an average particle size of 30nm in diameter.

Structure and mechanical properties of extruded Mg-Gd based alloy sheet

The Mg-8Gd-2Y-1Nd-0.3Zn-0.6Zr (wt.%) alloy sheet was prepared by hot extrusion technique, and the structure and mechanical properties of the extruded alloy were investigated. The results show that the alloy in different states is mainly composed of alpha-Mg solid solution and secondary phases of Mg5RE and Mg24RE5 (RE = Gd, Y and Nd). At aging temperatures from 200 degrees C to 300 degrees C the alloy exhibits obvious age-hardening response. Great improvement of mechanical properties is observed in the peak-aged state alloy (aged at 200 degrees C for 60 h), the ultimate tensile strength (sigma(b)), tensile yield strength (sigma(0.2)) and elongation (epsilon) are 376 MPa, 270 MPa and 14.2% at room temperature (RT), and 206 MPa. 153 MPa and 25.4% at 300 degrees C, respectively, the alloy exhibits high thermal stability.

Holmium porphyrin compound liquid crystals: Synthesis and properties

5,10,15,20-Tetra-[(p-alkoxy-m-ethyloxy)phenyl]porphyrin and [5-(p-alkoxy)phenyl-10,15,20-tri-phenyl]porphyrin and their holmium(III) complexes are reported. They display a hexagonal columnar discotic columnar Col(h)) liquid crystal phase and were studied by cyclic voltammetry, surface photovoltage spectroscopy (SPS), electric-field-induced surface photovoltage spectroscopy (EFISPS) and luminescence spectroscopy. Within the accessible potential window, all these compounds exhibit two one-electron reversible redox reactions. Quantum yields of Q band are in the region 0.0045-0.21 at room temperature. The SPS and EFISPS reveal that all the compounds are p-type semiconductors and exhibit photovoltaic response due to pi-pi* electron transitions.

Microstructure and mechanical properties of high performance Mg-Gd based alloys

The Mg-12Gd-4Y-2Nd-0.3Zn-0.6Zr (wt.%) alloy was prepared by casting technology, and the structure, age hardening behavior and mechanical properties of the alloy have been investigated. The results demonstrated that the alloy was composed of alpha-Mg matrix, a lot of dispersed Mg24RE5 (RE = Gd/Y/Nd) and Mg5RE precipitates in the as-cast and the T6 state alloys. The alloy exhibited remarkable age hardening response and excellent mechanical properties from room temperature (RT) to 300 degrees C by optimum solid solution and aging conditions. The ultimate tensile strength.

Microstructures and mechanical properties of as-cast Mg-5Y-3Nd-Zr-xGd (x=0, 2 and 4 wt.%) alloys

Mg-5Y-3Nd-0.6Zr-xGd (x = 0, 2 and 4 wt.%) alloys were prepared by metal mould casting technique, the structures and mechanical properties were investigated. The alloys were mainly composed of alpha-Mg solid solution and beta-phase. With increasing Gd content, Mg5RE phase increased and the grain was refined. The Mg-5Y-3Nd-2Gd-0.6Zr alloy exhibited highest ultimate tensile strength and Mg-5Y-3Nd-0.6Zr alloy showed highest yield strength at room temperature. With increasing amount of Gd, the thermal resistance was improved. The Mg-5Y-3Nd-4Gd-0.6Zr alloy exhibited highest UTS and YS at 250 degrees C, they were about 1.27 times higher than those of Gd-free alloy, which was mainly attributed to the increase of the beta-phase and Mg5RE strengthening phase.

Self-Assembly from Two-Dimensional Layered Networks to Tetranuclear Structures: Syntheses, Structures, and Properties of Four Copper-Thiacalix[4]arene Compounds

Two new copper-thiacalix[4]arene compounds, [Cu-2(1)-Cl-2(H(4)TC4A)](CH3OH) (1) and [Cu(I)2Cl(2)(H(4)PTC4A)](CH3OH)(CHCl3)(0.5) (2) (where H(4)TC4A = p-tert-butylthiacalix[4]arene and H(4)PTC4A = p-phenylthiacalix[4]arene), were synthesized by the solvothermal method in the mixed CH3OH/CHCl3 (1: 1) solvent and reassembled in air at room temperature to two other structures, [(Cu4Cl3)-Cl-II(HCO2)(TC4A)(CH3-OH)(2)(H2O)](CHCl3)(CH3OH)(2.7) (3) and [(Cu4Cl4)-Cl-II(PTC4A)(CH3OH)(4)] (4), respectively. All these four compounds were characterized by TG analyses, FTIR spectroscopy, and singlecrystal X-ray diffraction analyses. Compounds 1 and 2 feature two-dimensional layered networks, while compounds 3 and 4 are assembled by some tetranuclear units.

Investigations of the properties of Mg-5Al-0.3Mn-xCe (x=0-3, wt.%) alloys

Mg-5Al-0.3Mn-xCe (x = 0-3, wt.%) alloys were prepared by metal mould casting method. The microstructures and mechanical properties were investigated. The results revealed that the main phases of as-cast Mg-5Al-0.3Mn alloy consist of alpha-Mg matrix and beta-Mg17Al12 phase. With the addition of Ce element, Al11Ce3 precipitates were formed and mainly aggregated along the grain boundaries. The amount of the Al11Ce3 precipitates increased with increasing addition of Ce, but the amount of beta-Mg17Al12 phase decreased. The highest tensile strength was obtained in Mg-5Al-0.3Mn-1.5Ce alloy. The ultimate tensile strength (UTS), yield strength (YS) and elongation at room temperature are 203 MPa, 88 MPa and 20%, separately.