268 resultados para Er3 -doped oxyhalide glasses


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SiOx films with oxygen concentrations ranging 13-46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using: pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2x10(15) ions/cm(2). The samples were subsequently annealed in N-2 for 20 sec at temperatures of (300-950 degrees C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 mu m. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er3+ luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.

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Erbium-implanted silicones were treated by lamp-heating rapid thermal annealing (RTA). Two types of erbium-related photoluminescence spectra appear under different anneal temperatures. 750 degrees C annealing optimizes the luminescence intensity, which does not change with anneal time. Exciton-mediated energy transfer model in erbium-doped silicon was presented. The emission intensity is related to optical active erbium concentration, lifetime of excited Er3+ ion and spontaneous emission time. The thermal quenching of the erbium luminescence in Si is caused by thermal ionization of erbium-bound exciton complex and nonradiative energy backtransfer processes, which correspond to the activation energy of 6.6 meV and 47.4 meV respectively.

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Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

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Ytterbium fluoride compounds with different crystal phases and morphologies, such as beta-NaYbF4 hexagonal microdisks, microprisms, microtubes, and alpha-NaYbF4 submicrospheres as well as YbF3 octahedra, have been synthesized via a facile hydrothermal route. X-Ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and photoluminescence (PL) spectra were used to characterize the samples.

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The blue long-lasting phosphorescence (LLP) phenomenon was observed for Eu2+-doped SrO-B2O3 glasses prepared in the reducing atmosphere. The phosphorescence peaks at about 450 nm due to the 4f5d -> 4f transition of Eu2+. With the doping of different amounts of Eu2+, the concentration-quenching phenomenon was observed for both the LLP and photoluminescence of the glasses, and the critical concentration for the two cases was same, i.e., 0.02 mol% Eu2+. And by the investigation of the TL curves, the content of Eu2+ had an effect on the trap depth of the samples. At last the possible mechanism of the LLP of the samples was suggested.

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Y2(1-x) Gd2xSiWO8 : A ( 0 <= x <= 1; A= Eu3+, Dy3+, Sm3+, Er3+) phosphor films have been prepared on silica glass substrates through the sol - gel dip-coating process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscope (AFM), scanning electron microscopy (SEM) and photoluminescence spectra as well as lifetimes were used to characterize the resulting films. The results of the XRD indicated that the films began to crystallize at 800 degrees C and crystallized completely at 1000 degrees C. The AFM and SEM study revealed that the phosphor films, which mainly consisted of closely packed grains with an average size of 90 - 120 nm with a thickness of 660 nm, were uniform and crack free. Owing to an efficient energy transfer from the WO42- groups to the activators, the doped lanthanide ion ( A) showed its characteristic f - f transition emissions in crystalline Y2(1-x) Gd2xSiWO8 (0 <= x <= 1) films. The optimum concentrations for Eu3+, Dy3+, Sm3+, Er3+ were determined to be 21, 5, 3 and 7 mol% of Y3+ in Y2SiWO8 films, respectively.

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Samarium and manganese co-doped zinc borosilicate storage glasses were prepared by high temperature solid state method. The effect of doping samarium on the defect of Mn activated sample was studied by means of thermoluminescence spectra. It was found that the shallower traps of the sample predominate with the addition of samarium, as a result, the phosphorescence and storage properties of the manganese doped zinc borosilicate glasses were greatly changed.

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CaWO4 phosphor films doped with rare-earth ions (Eu3+, Dy-,(3+) Sm3+, Er3+) were prepared by the Pechini sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, thermogravimetric and differential thermal analysis, atomic force microscopy, and photoluminescence spectra, as well as lifetimes, were used to characterize the resulting powders and films. The results of the XRD analysis indicated that the films began to crystallize at 400degreesC and that the crystallinity increased with elevation of the annealing temperature. The doped rare-earth ions showed their characteristic emissions in crystalline CaWO4 phosphor films due to energy transfer from WO42- groups to them. Both the lifetimes and PL intensities of the doped rare-earth ions increased with increasing annealing temperature, from 500 to 900degreesC, and the optimum concentrations for Eu3+, Dy3+, Sm3+, Er3+ were determined as 30, 1.5, 1.5, 0.5 at.% of Ca2+ in CaWO4 films annealed at 900degreesC, respectively.

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Nanocrystalline Gd2O3:A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 degreesC and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 mum). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 degreesC, and the optimum concentrations for Eu3+, Dy3+, sm(3+), Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively.

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Nanocrystalline YVO4:A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM) and optical microscopy, UV/vis transmission and absorption spectra, photoluminescence (PL) spectra, and lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 400 degreesC and the crystallinity increased with the increase of annealing temperatures. Transparent nonpatterned phosphor films were uniform and crack-free, which mainly consisted of grains with an average size of 90 nm. Patterned gel and crystalline phosphor film bands with different widths (5-60 mum) were obtained. Significant shrinkage and a few defects were observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline YVO4 phosphor films because of an efficient energy transfer from vanadate groups to them. The Sm3+ and Er3+ ions also showed upconversion luminescence in a YVO4 film host. Both the lifetimes and PL intensity of the rare earth ions increased with increasing annealing temperature from 400 to 800 degreesC, and the optimum concentration for Eu3+ was determined to be 7 mol % and those for Dy3+, Sm3-, and Er3+ were 2 Mol % of Y3- in YVO4 films, respectively.

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In this presentation, nanocrystalline YVO4:A (A=Eu3+, Dy3+, SM3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography (micro-molding in capillaries). XRD, FT-IR, AFM and optical microscope, absorption spectra, photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 400 degrees C and the crystallinity increased with the increase of annealing temperatures. Transparent nonpattemed phosphor films were uniform and crack free, which mainly consisted of grains with an average size of 90nm. Patterned crystalline phosphor film bands with different widths (5-30 mu m) were obtained. The doped rare earth ions (A) showed their characteristic emission in crystalline YVO4 phosphor films due to an efficient energy transfer from vanadate groups to them. The Sm3+ and Er3+ ions also showed upconversion luminescence in YVO4 film host. The optimum concentration for Eu3+ was determined to be 7 mol% and those for Dy3+, Sm3+, Er3+ were 2 Mol% of Y3+ in YVO4 films, respectively.

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Sol-gel derived luminescent thin films doped with rare earth (RE) complexes were prepared using an in-situ synthesis method with a two-step hydrolysis process and the luminescence spectra were measured. Fluorescence Lifetime and thermal stability were investigated. The results show that a broad excitation band indicates the formation of RE complexes in the solid thin films. RE ions, which are restrained in a silica matrix, present longer lifetime and higher thermal stability than that in DMF/PVB films containing the corresponding pure complexes. (C) 2000 Elsevier Science B.V. All rights reserved.

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A two-dimensional axisymmetric numerical model is presented to study the influence of local magnetic fields on P-doped Si floating zone melting crystal growth in microgravity. The model is developed based on the finite difference method in a boundary-fitted curvilinear coordinate system. Extensive numerical simulations are carried out, and parameters studied include the curved growth interface shape and the magnetic field configurations. Computed results show that the local magnetic field is more effective in reducing the impurity concentration nonuniformity at the growth interface in comparison with the longitudinal magnetic field. Moreover, the curved growth interface causes more serious impurity concentration nonuniformity at the growth interface than the case with a planar growth interface.

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The room temperature creep behaviors of Ce-based bulk metallic glasses were examined by the use of nanoindentation. The creep rate and creep rate sensitivity of Ce-based BMGs were derived from indentation creep curves. The low creep rate sensitivity of Ce-based BMGs indicates that the room temperature creep is dominated by localized shear flow. The experimental creep curves can be described by a generalized Kelvin model. Furthermore, the creep retardation spectrum is calculated for the Ce-based metallic glasses. The results showed that creep retardation spectrum consists of two relatively separated peaks with the well defined characteristic relaxation times.

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We report ductile bulk metallic glasses based on martensitic alloys. The slowly cooled specimens contain a mixture of parent 'austenite' and martensite phase. The slightly faster cooled bulk metallic glasses with 2-5 nm sized 'austenite'-like crystalline cluster reveal high strength and large ductility (16%). Shear bands propagate in a slither mode in this spatially inhomogeneous glassy structure and undergo considerable 'thickening' from 5-25 nm. A 'stress induced displacive transformation' is proposed to be responsible for both plasticity and work-hardening-like behavior of these 'M-Glasses'.