Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

The SPER and characteristics of Si1-yCy alloys

\Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si(100) substrate by solid phase epitaxy recraystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of beta-SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate.

Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)

The structural evolution of the ordered N-N' dibutyl-substituted quinacridone (QA4C) multilayers (3 MLs) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (LEED) during organic molecular beam epitaxy (MBE). Experimental results of LEED patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. Multilayer growth can be achieved at the substrate temperatures below 300 K, while at the higher temperatures we can only get one ordered monolayer of QA4C. Two kinds of structures, the commensurate and incommensurate one, often coexist in the QA4C multilayer. With a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the QA4C bulk crystal, prevails with the layer of QA4C increasing to 3 MLs. The two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer.

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.

Esterification of acetic acid with N-butanol over the catalysts of surface hydrophobicity and lipophobicity

A series of silica-supported silicotungstic acid catalysts (H4SiW12O40, abbreviated as HSiW), modified with various loadings of Teflon (HSiW/SiO2-Teflon), were prepared by impregnation method. The surface properties of the catalysts were studied by means of XRD, BET, NH3-TPD and the Drop Shape Analyzer (DSA) measurements. Both the surface hydrophobicity and the surface lipophobicity of HSiW/SiO2-Teflon catalysts are enhanced by means of the addition of Teflon.

Hydrogenation of phenol in scCO(2) over carbon nanofiber supported Rh catalyst

A catalyst of Rh nanoparticles supported on a carbon nanofiber, 5 wt.% Rh/CNF, with an average size of 2-3 nm has been prepared by a method of incipient wetness impregnation. The catalyst presented a high activity in the ring hydrogenation of phenol in a medium of supercritical CO2 (scCO(2)) at a low temperature of 323 K. The presence of compressed CO2 retards hydrogenation of cyclohexanone to cyclohexanol under the reaction conditions used, and this is beneficial for the formation of cyclohexanone, increasing the selectivity to cyclohexanone.

In situ preparation of Ir/ZSM-5/cordierite honeycombs and their application for NOx abatement

ZSM-5 zeolites were synthesized in situ onto cordierite honeycombs by vapor phase transport (VPT) for the first time. The as-synthesized ZSM-5/cordierite honeycombs were impregnated with IrCl3 and tested for NOx reduction with a simulated exhaust gas as the reducing agent. Under the conditions of excess oxygen, the Ir/ZSM-S/cordierite monolith catalyst exhibited NO reduction of 73% at a temperature of 573 K and a space velocity of 20,000 h(-1).

Catalytic reduction of NO over in situ synthesized Ir/ZSM-5 monoliths

The catalytic performance of Ir-based catalysts was investigated for the reduction of NO under lean-burn conditions over binderless Ir/ZSM-5 monoliths, which were prepared by a vapor phase transport (VPT) technique. The catalytic activity was found to be dependent not only on the Ir content, but also on the ZSM-5 loading of the monolith. With the decreasing of the Ir content or the increasing of the ZSM-5 loading of the monolith, NO conversion increased. When the ZSM-5 loading on the cordierite monolith was raised up to ca. 11% and the metal Ir content was about 5 g/l, the NO conversion reached its maximum value of 73% at 533 K and SV of 20 000 h(-1). Furthermore, both the presence of 10% water vapor in the feed gas and the variation of space velocity of the reaction gases have little effect on the NO conversion. A comparative test between Ir/ZSM-5 and Cu/ZSM-5, as well as the variation of the feed gas compositions, revealed that Ir/ZSM-5 is very active for the reduction of NO by CO under lean conditions, although it is a poor catalyst for the C3H8-SCR process. This unique property of Ir/ZSM-5 makes it superior to the traditional three-way catalyst (TWC) for NO reduction under lean conditions. (C) 2001 Elsevier Science B.V. All rights reserved.

Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition

The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that the ( 0002) peak of GaNP shifts to a smaller angle with increasing P content. From the GaNP photoluminescence (PL) spectra, the red shifts from the band-edge emission of GaN are determined to be 73, 78 and 100 meV, respectively, in the GaNP alloys with the P contents of 1.5%, 5.5% and 7.5%. No PL peak or XRD peak related to GaP is observed, indicating that phase separation induced by the short-range distribution of GaP-rich regions in the GaNP layer has been effectively suppressed. The phase-separation suppression in the GaNP layer is associated with the high growth rate and the quick cooling rate under the given growth conditions, which can efficiently restrain the accumulation of P atoms in the GaNP layer.