Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities

This paper describes the design and fabrication process of a two-dimensional GaAs-based photonic crystal nanocavity with InAs quantum dots (QDs) emitters and analyzes the optical characteristics of cavity modes at room temperature. The micro-luminescence spectrum recorded from the nanocavities exhibits a narrow optical transition at the lowest order resonance wavelength of about 1137 nm with about 1 nm emission linewidth. In addition, the spectra of photonic crystal nanocavities processed under different etching conditions show that the verticality of air hole sidewall is an important factor determing the luminescence characteristics of photonic crystal nanocaivties. Finally,,the variance of resonant modes is also discussed as a function of r/a ratio and will be used in techniques aimed at improving the probability of achieving spectral coupling of a single QD to a cavity mode.

Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.

广西主要林区多孔菌生物多样性与资源的初步研究

广西壮族自治区是中国多孔菌资源比较丰富的区域之一，本研究对广西主要林区进行了初步调查，并根据形态学研究方法对广西地区的多孔菌进行了系统分类学研究。 结果显示，广西地区的多孔菌共有15科，60属，140种。研究过程中发现两个新种，分别是菌索容氏孔菌Junghuhnia rhizomorpha H.S. Yuan & Y.C. Dai和小孔大孢卧孔菌Megasporoporia microporela X.S. Zhou &Y.C. Dai；发现7个中国新记录种：萨拉氏灵芝Ganoderma sarasinii Steyaert，唐氏胶囊革菌Gloeocystidiellum donkii S.S. Rattan，线浅孔菌Grammothele lineata Berkeley & M.A. Curtis，粉状捷克革菌Jacksonomyces furfurellus (Bres.) Sheng H. Wu & Z.C. Chen，半伏容氏孔菌Junghuhnia separabilima (Pouzar) Ryvarden，非洲纵隔担孔菌Protomerulius africanus (Ryvarden) Ryvarden和日本芮氏孔菌Wrightoporia japonica Núñez & Ryvarden；78种为广西地区新记录种，占该地区已报道种类的55.7%。 依据分类学的研究结果，对广西地区的多孔菌的种类组成和地理成分进行了初步分析，结果显示，优势科为多孔菌科Polyporaceae（33.3%），其次为皱孔菌科Meripilaceae（10%），优势属为多孔菌属Polyporus（7.9%%）和针层孔菌属Phellinus（5.7%）；属的地理成分以世界广布属（68.3%）和热带–亚热带分布属（23.3%）为主，种的地理成分以泛热带分布成分（35%）和世界广布种（30%）为主。 经研究表明广西地区共有森林干基腐朽病原多孔菌21种，食用多孔菌菌有5种，药用多孔菌32种，工业用多孔菌17种，多孔菌资源较丰富。 对重要种类木蹄层孔菌Fomes fomentarius (L.:Fr.) Fr.进行了固体培养研究，结果显示木蹄层孔菌的营养菌丝生长最适培养温度为28℃，最适培养pH值为7，最适培养碳源为蔗糖，最适培养氮源为蛋白胨。

中国产丝齿菌属Hyphodontia分类学研究

革菌是指平伏的具有光滑、齿状或瘤状子实层体表面的木材腐朽菌，该类群属于担子菌门（Basidiomycota），担子菌纲（Basidiomycetes），是一类数量较多、组成较为复杂的高等真菌。 革菌具有重要的生态学功能和经济价值。该类群真菌能够降解木质素和纤维素，在森林生态系统中起着关键的降解还原作用；同时，革菌还是重要的生物资源，部分种类能够造成林木病害是林木病原菌；部分革菌具有药用、食用价值；有些种类的革菌还具有重要的工业应用价值。 对采集自我国不同地区、不同森林生态类型中的，以及现保存于中国科学院沈阳应用生态研究所东北生物标本馆（IFP），中国科学院微生物研究所真菌标本馆（HMAS）等国内主要标本馆的非褶菌目木材腐朽菌 — 产丝齿菌属（Hyphodontia J. Erikss.）的真菌标本进行了全面系统的研究，其中自采标本约800余号，馆藏标本600余号。按照Donk，Eriksson和Parmasto提出的传统分类方法对该属的种类进行详细的描述和显微结构绘图，记载了每个种类的寄主、国内外分布及研究标本，并对每种与相似种的联系和区别进行了讨论。我国范围内共记录及描述产丝齿菌属（Hyphodontia）39种，其中共发现新种3个，分别是：头状囊产丝齿菌Hyphodontia capitatocystidiata H.X. Xiong, Y.C. Dai & Sheng H. Wu，异囊产丝齿菌H. heterocystidiata H.X. Xiong, Y.C. Dai & Sheng H. Wu 和 似土黄产丝齿菌H. subpallidula H.X. Xiong, Y.C. Dai & Sheng H. Wu；发现中国新记录种2个：冷杉产丝齿菌Hyphodontia abieticola (Bourdot & Galzin) J. Erikss.和弯孢产丝齿菌H. curvispora J. Erikss. & Hjortstam；大陆新记录种7个，分别是：台湾产丝齿菌Hyphodontia formosana Sheng H. Wu & Burds.，羊毛状产丝齿菌Hyphodontia lanata Burds. & Nakasone，膜质产丝齿菌Hyphodontia pelliculae (H. Furuk.) N. Maek.，无锁产丝齿菌Hyphodontia poroideoefibulata Sheng H. Wu，近球孢产丝齿菌Hyphodontia subglobasa Sheng H. Wu，热带产丝齿菌Hyphodontia tropica Sheng H. Wu和管形产丝齿菌Hyphodontia tubuliformis Sheng H. Wu。