Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)

We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V.

Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice

We have demonstrated a 20 period dislocation-free InGaAs/GaAs quantum dot superlattice which is self-formed by the strain from the superlattice taken as a whole rather than by the strain from the strained single layer. The island formation does not take place while growing the corresponding strained single layer. From the variation of the average dot height in each layer, the strain distribution and relaxation process in the capped superlattice have been examined. It is found that the strain is not uniformly distributed and the greatest strains occur at two interfaces between the superlattice and the substrate and the cap layer in the capped superlattice. (C) 1997 American Institute of Physics.

Structural ordering and interface morphology in symmetrically strained (GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest [110] directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation, A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Self-organization of the InGaAs GaAs quantum dots superlattice

The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) was investigated with cross-sectional transmission electron microscopy (XTEM), and double-crystal X-ray diffraction (DCXD). We found that the QDs spacing in the first layer can affect the vertical alignment of QDs. There seems to exist one critical lateral QD spacing, below which merging of QDs with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. Once the critical value of QDs spacing is reached, the InGaAs QDs of the first layer are simply reproduced in the upper layers. The X-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the QDs superlattice, and multi-quantum wells (QW) formed by the wetting layers around QDs. (C) 1999 Elsevier Science B.V. All rights reserved.

New method for the growth of highly uniform quantum dots

A new method is realized for the growth of self-formed quantum dots. We identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. Unlike the Stranski-Krastanow (S-K) growth mode, the islands do not form during the growth of the corresponding strained single layers. Highly uniform quantum dots can be self-formed via this mechanism. The low temperature spectra of self-formed InGaAs/GaAs quantum dot superlattices grown on a (001) GaAs substrate have a full width at half maximum of 26-34 meV, indicating a better uniformity of quantum dot size than those grown in the S-K mode. This method can provide great degrees of freedom in designing possible quantum dot devices. 1998 Published by Elsevier Science B.V. All rights reserved.

Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)

The structural evolution of the ordered N-N' dibutyl-substituted quinacridone (QA4C) multilayers (3 MLs) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (LEED) during organic molecular beam epitaxy (MBE). Experimental results of LEED patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. Multilayer growth can be achieved at the substrate temperatures below 300 K, while at the higher temperatures we can only get one ordered monolayer of QA4C. Two kinds of structures, the commensurate and incommensurate one, often coexist in the QA4C multilayer. With a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the QA4C bulk crystal, prevails with the layer of QA4C increasing to 3 MLs. The two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer.

应用负载型纳米铁去除饮用水中砷的研究

砷是毒性最强的元素之一，水体中砷的污染己经引起人们广泛的关注。我国的新疆、内蒙、山西和台湾等省和地区地下水砷含量严重超标。全球共有5,000多万人遭受高砷饮用水的威胁，其中中国有1,500多万，是饮用水砷污染最严重的国家之一。WHO推荐饮用水砷的最高允许浓度从原来的50 µg•L-1已降至10 µg•L-1。更为严格的砷卫生标准的颁布，对作为饮用水源的地下水中的砷去除工艺提出了更高的要求。吸附法除砷比膜法、混凝法和离子交换法更安全、简便，是砷去除工艺中最有效的方法之一。 首先，本研究通过优化制备条件（包括炭种类的选择、炭的粒径大小、还原剂的浓度及滴定速率、反应温度、铁盐的种类及浓度、分散剂的比例及浓度），制备了负载型纳米铁。考虑到砷的去除效率、工程应用的可行性以及经济性，最优的制备条件如下：选用粒径为20~40目煤质炭，在室温、一定的分散剂比例及浓度，0.2 M KBH4滴速为20 d•min-1时所制备的Fe/炭为82.0 mg•g-1；纳米铁在活性炭孔内呈针状，其直径为30~500 nm，长度为1,000~2,000 nm。绝大多数的铁都负载到活性炭内部，这在处理水时铁不流失很重要。 其次，利用制备的负载型纳米铁作吸附载体，进行了饮用水中As(Ⅴ)的吸附去除实验。研究了该吸附剂对As(Ⅴ)的吸附等温线、动力学以及影响动力学的各种因素（包括As(Ⅴ)的不同初始浓度、吸附剂用量、pH值、共存离子和不同温度）、pH值、共存离子等环境条件对As(Ⅴ)去除的影响；以及吸附剂的再生及再生后的吸附效率等。研究发现在前12 h内吸附较快，72 h时达到了平衡。用Langmuir 吸附等温式估算出As(Ⅴ)的吸附量为12.0 mg•g-1。该吸附剂在pH 6.5， (25±2)℃， As(Ⅴ)初始浓度为2 mg•L-1，吸附剂用量为1.0 g•L-1时，As(Ⅴ)的去除率为75.2%；当把吸附剂的用量增加到1.5 g•L-1时，As(Ⅴ)的去除率可达99.9%以上。吸附剂可以用0.1M的NaOH浸泡12 h后即可再生，再生效率较高。常见的阴离子中PO43-、SiO32-对As(Ⅲ)的去除抑制较大，而SO42-、CO32-、C2O42-等离子对砷的去除影响较小。Fe2+对As(Ⅲ)的吸附抑制作用较大而其它阳离子影响不大。吸附剂可用0.1 M NaOH 有效再生，并且具有良好的机械性能。实验室初步实验数据表明，该吸附剂对饮用水除砷具有较好的应用前景。 第三，利用实验室制备的负载型纳米铁对饮用水中As(Ⅲ)的吸附去除也进行了研究。考察了吸附等温线、动力学以及影响动力学的各种因素、pH值、共存离子等环境条件对As(Ⅲ)去除的影响；以及吸附剂的再生及再生后的吸附效率等。研究发现，该吸附剂在pH 6.5， (25±2)℃， As(Ⅲ)初始浓度为2 mg•L-1，吸附剂用量为1.0 g•L-1时， 对As(Ⅲ)的去除率为99.8%；其吸附容量为1.996mg•g-1。吸附过程中部分As(Ⅲ)被氧化。与As(Ⅴ)的吸附相比，该吸附剂对As(Ⅲ)的效率比较高-而常见的其它除砷吸附剂如载铁纤维棉等，对As(Ⅴ)的效率比As(Ⅲ)高，为有效去除As(Ⅲ)，常常需要专门加上氧化这一过程。 最后，利用负载型纳米铁对饮用水中As(Ⅲ) 的氧化性能进行考察，发现该吸附剂不但能够有效吸附去除饮用水中的砷，而且还能把As(Ⅲ)有效地氧化为As(Ⅴ)。经过对吸附剂的构成组分分析发现，活性炭表面因富含多种官能团而对三价砷的氧化作用最大；其次是纳米铁也能把As(Ⅲ)氧化为As(Ⅴ)。

染料脱色菌株筛选及染料脱色作用研究

染料废水成分复杂，色度高，是主要的环境污染源之一。应用微生物对染料废水脱色具有处理费用低和操作管理方便等优势，具有较好的发展前景。 本文采用筛选到一株短刺小克银汉霉(Cuuninghamella echinulata) KM3及一株红酵母(Rhodotorula sp.)YR-1分别对偶氮染料刚果红废水和酸性红废水进行了脱色研究，同时利用KM3及YR-1组成的复合菌种脱色体系对酸性红废水进行了脱色实验，为染料脱色真菌的应用奠定了基础。 KM3形成的菌丝球对多种染料具有较好脱色效果。KM3最适菌丝球形成条件：pH6-7、装液量90ml、孢子悬液浓度105个/ml (接种5ml)、摇床转速120rpm、培养温度30℃、培养时间72h；成球机理为凝聚型发育。KM3菌丝球对刚果红最佳脱色条件为：染料溶液初始pH值7.0，温度为33℃，摇床转速为120rpm。在刚果红50~200mg/l 浓度范围内， KM3菌丝球对刚果红吸附脱色动力学可用拟二级动力学方程描述。菌丝球对刚果红的吸附行为符合Langmuir和Freundlich 等温方程模型，Langmuir方程能更好的描述菌丝球对刚果红的吸附行为。丙酮对刚果红的解吸率最高，其解吸动力学过程符合二级动力学方程。将KM3应用在真菌生物滤床反应器中，在非灭菌和灭菌情况下接种孢子悬液后处理刚果红废水的过程中，均需长时间挂膜，处理效果一般。反应器中投加菌丝球后处理刚果红废水在3小时内达到92%以上的脱色效果。 YR-1对酸性红脱色机制属于降解脱色。YR-1对酸性红的最佳脱色培养条件为：初始pH 5.0、接种量5%、温度30℃；最佳碳源是葡萄糖，其次是蔗糖；最佳氮源是酵母膏或蛋白胨。在替换分批脱色实验和连续补料脱色实验中，脱色率一直保持在75%以上，显示YR-1在上述脱色体系中均具有良好适应性。 在三种复合菌种对酸性红的脱色体系中，体系Ⅲ（菌丝球与海藻酸钠固定化的酵母细胞混合培养）的脱色效果可达98%以上。对该体系而言，3种粒径固定化酵母小球（Ø1.1mm、1.8mm、3.1mm）中Ø1.8mm、3.1mm小球脱色率较为理想，而酵母细胞初始密度对脱色效果的影响不大。 KM3、YR-1分别具有处理刚果红废水和酸性红废水的应用前景，而KM3与YR-1联合应用对酸性红的脱色效果更好。

磷酸盐在白浆土中的吸附与解吸特性

本文对采自黑龙江省三江平原地区三个不同亚类的四种白浆土的表层和白浆层的磷酸盐吸附与解吸特性做了较详细的研究，结果表明，白浆土是一种吸磷能力很强的土类。整个吸附过程分快反应和慢反应两步进行。吸附动力学过程能很好地拟合Langmuir型方程磷在白浆土中的吸附特性表明，土壤中存在两种能量不同的吸附点位，因此，其吸附过程可用双面Langmuir方程描述。白浆土的解吸过程存在明显的滞后现象，连续解吸特征进一步证明白浆土中含有两种不同类型的吸附点位或吸附区域。一类结合能常数较高，被吸附的磷难于解吸。另一类则相反。有机质、pH和铁铝氧化物都显著地影响白浆土对磷的吸附。增加有机质可促进磷的吸附，同时又合被吸附的磷易于解吸。而去除有机质，则使吸附的磷难于解吸。提高土壤的pH值。可减少磷的吸附，但施用石灰，因磷酸钙的沉淀生成。反而使“吸附”量大大增加。铁铝氧化物中，铝对吸附的影响更强烈一些。磷被吸附后，转变成铝磷（Al-P）的量多于铁磷（Fe-P）。吸附磷解吸时，也以Al-P为主。Fe-P是较好的“速效磷源”，而Al-P既是较好的“速效磷源”，也是很好的“缓效磷源”。

Evaluation of the Uncertainties Caused by the Forward Scattering in Turbidity Measurement of the Coagulation Rate

The forward scattering light (FSL) received by the detector can cause uncertainties in turbidity measurement of the coagulation rate of colloidal dispersion, and this effect becomes more significant for large particles. In this study, the effect of FSL is investigated on the basis of calculations using the T-matrix method, an exact technique for the computation of nonspherical scattering. The theoretical formulation and relevant numerical implementation for predicting the contribution of FSL in the turbidity measurement is presented. To quantitatively estimate the degree of the influence of FSL, an influence ratio comparing the contribution of FSL to the pure transmitted light in the turbidity measurement is introduced. The influence ratios evaluated under various parametric conditions and the relevant analyses provide a guideline for properly choosing particle size, measuring wavelength to minimize the effect of FSL in turbidity measurement of coagulation rate.

PEGylated Phospholipid Membrane on Polymer Cushion and Its Interaction with Cholesterol

By employing poly(ethylene glycol) (PEG) shielding and a polymer cushion to achieve air stability of the lipid membrane, we have analyzed PEG influence on dried membranes and the interaction with cholesterol. Small unilamellar vesicles (SUVs) formed by the mixture of 1,2-dimyristoylphosphatidylcholine (DMPC) with different molar fraction of 1,2-distearoyl-sn-glycero-3-phosphoethanolamine-N-[methoxy(poly(ethylene glycol))-2000] (DSPE-PEG(2000)) adsorb and fuse into membranes on different polymer-modified silicon dioxide surfaces, including chitosan, poly(L-lysine) (PLL), and hyaluronic acid, Dried membranes arc further examined by ellipsometer and atomic force microscopy (AFM). Only chitosan can support a visible and uniform lipid array. The thickness of dry PEGylated lipid membrane is reduced gradually as the molar fraction of PEG increases. AFM scanning confirms the lipid membrane stacking for vesicles containing low PEG, and only a proper amount of PEG can maintain a single lipid hi lover; however, the air stability of the membrane will be destroyed if overloading. PEG. Cholesterol incorporation can greatly improve the structural stability of lipid membrane, especially for those containing high molar fraction of PEG. Different amounts of cholesterol influence the thickness and surface morphology of dried membrane.

活性炭纤维(ACF)吸附法处理河流突发污染事故模拟研究

环境突发污染事故给人民生活、经济发展和生态环境造成重大影响，研究污染物泄漏造成河流突发污染事故的应急处理方法十分必要。本论文选取苯酚、苯胺和亚甲基蓝等典型污染物为实验对象，采用吸附容量大、密度与水接近的活性炭纤维(ACF)为吸附剂。在自制的河流模型中，研究了ACF以苯酚、苯胺和亚甲基蓝为典型污染物的吸附过程，考察了吸附剂投加量、污染物浓度、吸附剂比表面积、吸附剂投加方式、水流速度与水质等对吸附速率与吸附效果的影响。实验结果表明，ACF能以较快的速率吸附苯酚、苯胺和亚甲基蓝，吸附率都在95％以上； ACF投加量是影响吸附速率最重要的因素，当一次性投加ACF质量之比为 1:2:4时，吸附速率常数之比近似为1:2:4；污染物浓度对吸附速率的影响显著，浓度较低时吸附速率较高。苯酚初始浓度为7mg·L-1时，经过86分钟的吸附，处理后的浓度可以达到地表水Ⅴ类水中挥发酚的限值要求(0.1mg·L-1)；在吸附11分钟左右追加适量的ACF，能够明显提高吸附速率；河水流速和河流中的天然有机物、浊度、河水硬度对ACF吸附都不产生显著影响，这说明ACF作为河流突发污染事故应急处理的吸附剂，有广泛的适应性。在实际河水中，ACF对苯酚的吸附过程与在模拟河水中相似，吸附效果显著。实验结果还表明，ACF对苯酚的吸附是放热反应，符合Freundlich模型和Langmuir模型。事故应急处理后，应该及时将吸附了污染物的ACF打捞上来，有利于进行后续处理。 Emergency environmental pollution accidents pose significant impacts on our living, economic development and ecological environment. The study on the approach of emergency control for the contingency caused by leakage of pollutants in rivers is very necessary. In the experiment, phenol, aniline and methylene blue were selected as representative pollutant and activated carbon fiber (ACF) was selected as adsorbent, which has strong adsorption capacity and similar density to water. In the self-made river model, the effects of ACF dosage, pollutant concentration, ACF surface area, ACF adding ways, water flow rate and water quality on adsorption courses were investigated. The experimental results showed that ACF could adsorb pollutant quickly and effectively. The ACF dosage was the most important factor that affected adsorption rate .When the ACF dosage rate was 1:2:4, the constants of adsorption rate was approximately 1:2:4. The effect of pollutant concentrations on the adsorption rate was notable. Faster adsorption rates were achieved at low pollutant concentrations. Phenol concentration reached the limits of volatile phenol in Category Ⅴ surface water (0.1 mg·L-1) after 86 minutes of adsorption with initial phenol concentration of 7 mg·L-1. After 11 minutes of adsorption, certain amount of ACF was added and the adsorption rate was improved significantly. River flow rate and water quality have little effect on the adsorption rate. The adsorption results obtained in actual river water were comparable with that in simulating river water. The results also showed that, ACF on the absorption of phenol is exothermic reaction, witch matched with the Freundlich model and the Langmuir model. After emergency treatment, the ACF absorbed pollutants should be promptly salvaged for follow-up treatment.

粘红酵母对铀的吸附研究

Characteristic of uranium biosorption in water solution by Rhodotorula glutinis was investigated in the present study and the optimal pH for uranium adsorption was found to be 6-7.At the same time,maximum adsorption capacity of 149.4 mgU/(g dry cell)was identified,and Langmuir adsorption models can be used to simulate the isothermal biosorption process with high correlation coefficient of 0.99.According to Fourier transform infrared spectra,a new peak at wave number of 904 cm-1,which can be assigned to the ...中文摘要：研究了粘红酵母对水溶液中铀的吸附行为,发现其吸附铀的最佳pH值为6～7,最大吸附量为149.4mgU.g-1,其吸附等温线和Langmuir吸附等温方程符合较好,相关系数R2达到0.99;比较吸附铀前后粘红酵母的红外光谱图发现,吸附过铀的菌体的红外光谱在904cm-1处出现了一个新的峰,此峰为UO2的伸缩振动峰,说明粘红酵母确实对铀发生了吸附作用。此外,氨基或羟基的伸缩振动峰由3309移至3287cm-1,细胞壁中碳水化合物或醇中C—O键伸缩振动发生位移,由1068移至1080cm-1,说明这些基团可能参与了吸附过程;蛋白质的特征吸收峰(1653,1540,1237cm-1)在吸附前后基本无明显变化,表明粘红酵母的主要成分及结构仍保持完整。吸附后的菌体利用0.1mol.L-1的NaHCO3处理后可解吸出其中96%的铀,可见该菌在铀矿废水处理方面具有广阔的应用前景。

Experimental results of helicon sources

Helicon plasma source is known as an efficient generator of uniform and high density plasma. A helicon plasma source was developed for the investigation of plasma striping and plasma lens at the Institute of Modern Physics, CAS. In this paper, the characteristics of helicon plasma have been studied by using Langmuir four-probe and a high plasma density up to 3.9×1013 /cm3 has been achieved with the Nagoya type III antenna. In the experiment, several important phenomena have been found: (1) for a given magnetic induction intensity, the plasma density became greater with the increase of RF power; (2) the helicon mode appeared at the RF power between 300 W and 400 W; (3) the plasma density gradually tended to saturation as the RF power increased to the higher power; (4) a higher plasma density can be obtained by a good matching between the RF power and the magnetic field distribution. The key issue is how to optimize the matching between the RF power and the magnetic field. Moreover, some tests on the extraction of ion beam were performed, and the preliminary results were given. The problems which existed in the helicon ion source will be discussed and the increase in beam density will be expected by extraction system optimum.