Enhanced electrical conductivity of highly crystalline polythiophene/insulating-polymer composite

Poly(3-butylthiophene) (P3BT)/insulating-polymer composites with high electrical conductivity have been prepared directly from the solution. These composites exhibit much higher conductivity compared to pure P3BT with the same preparation method provided that P3BT content is higher than 10 wt %. Morphological studies on both the pure P3BT and the composites with insulating polymer show that P3BT highly crystallizes and develops into whisker-like crystals. These nanowires are homogeneously distributed within the insulating polymer matrix and form conductive networks, which provide both extremely large interface area between conjugated polymer and insulating polymer matrix and highly efficient conductive channels through out the whole composite. In contrast, the conductivity enhancement of P3HT/PS composite is not so obvious and drops down immediately with increased PS content due mainly to the absence of highly crystalline whisker-like crystals and much larger scale phase separation between the components. The results presented here could further illuminate the origin of conductivity formation in organic semiconducting composites and promote applications of these polymer semiconductor/insulator composites in the fields of organic (opto-)electronics, electromagnetic shielding, and antistatic materials.

Bonding quartz wafers by the atom transfer radical polymerization of the glycidyl methacrylate at mild temperature

In this paper, we presented a novel covalent bonding process between two quartz wafers at 300 degrees C. High-quality wafer bonding was formed by the hydroxylization, aminosilylation and atom transfer radical polymerization (ATRP) of glycidyl methacrylate (GMA), respectively, on quartz wafer surfaces, followed by close contact of the GMA functional wafer and the aminosilylation wafer, the epoxy group opening ring reaction was catalyzed by the amino and solidified to form the covalent bonding of the quartz wafers. The shear force between two wafers in all bonding samples was higher than 1.5 MPa. Microfluidic chips bonded by the above procedures had high transparency and the present procedure avoided the adhesive to block or flow into the channel.

Organic thin-film transistors having inorganic/organic double gate insulators

Bottom-contact organic thin-film transistors (BC OTFTs) based on inorganic/organic double gate insulators were demonstrated. The double gate insulators consisted of tantalum pentoxide (Ta2O5) with high dielectric constant (kappa) as the first gate insulator and octadecyltrichlorosilane (OTS) with low kappa as the second gate insulator. The devices have carrier mobilities larger than 10(-2) cm(2)/V s, on/off current ratio greater than 10(5), and the threshold voltage of -14 V, which is threefold larger field-effect mobility and an order of magnitude larger on/off current ratio than the OTFTs with a Ta2O5 gate insulator. The leakage current was decreased from 2.4x10(-6) to 7.4x10(-8) A due to the introduction of the OTS second dielectric layer. The results demonstrated that using inorganic/organic double insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics.

Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine

The effects of positive and negative gate-bias stress on organic field-effect transistors (OFET) based on tantalum (Ta)/tantalum pentoxide (Ta2O5)/fluorinated copper phthalocyanine (F16CuPc) structure are investigated as a function of stress time and stress temperature. It is shown that gate-bias stress induces a parallel threshold voltage shift (DeltaV(T)) of OFETs without changes of field-effect mobility mu(EF) and sub-threshold slope (DeltaS). The DeltaV(T) is observed to be logarithmically dependent on time at high gate-bias appropriate to OFET operation. More importantly, the shift is directional, namely, be large shift under positive stress and almost do not move under negative stress. The threshold voltage shift is temperature dependent with activation energy of 0.51 eV We concluded that threshold voltage shift of the OFET with F16CuPc as active layer is due to charge trapping in the insulator in which trapped carriers have redistribution.

Electrical conductivity of a single Au/polyaniline microfiber

We report the measurements of conductivity, I-V curve, and magnetoresistance of a single Au/polyaniline microfiber with a core-shell structure, on which a pair of platinum microleads was attached by focused ion beam. The Au/polyaniline microfiber shows a much higher conductivity (similar to 110 S/cm at 300 K) and a much weaker temperature dependence of resistance [R(4 K)/R(300 K)=5.1] as compared with those of a single polyaniline microtube [sigma(RT)=30-40 S/cm and R(4 K)/R(300 K)=16.2]. The power-law dependence of R(T)proportional to T-beta, with beta=0.38, indicates that the measured Au/polyaniline microfiber is lying in the critical regime of the metal-insulator transition. In addition, the microfiber shows a H-2 dependent positive magnetoresistance at 2, 4, and 6 K.

Organic integrated pixels fabricated by a full evaporation method

An organic integrated pixel consisting of an organic light-emitting diode driven by an organic thin-film field-effect transistor (OTFT) was fabricated by a full evaporation method oil a transparent glass substrate. The OTFT was designed as a top-gate Structure, and the insulator is composed of a double-layer polymer of Nylon 6 and Teflon to lower the operation voltage and the gate-leakage current, and improve the device stability. The field-effect mobility of the OTFT is more than 0.5 cm(2) V-1 s(-1), and the on/off ratio is larger than 10(3). The brightness of the pixel reached as large as 300 cd m(-2) at a driving current of 50 mu A.

Bottom-contact organic field-effect transistors having low-dielectric layer under source and drain electrodes

An organic thin-film transistor (OTFT) having a low-dielectric polymer layer between gate insulator and source/drain electrodes is investigated. Copper phthalocyanine (CuPc), a well-known organic semiconductor, is used as an active layer to test performance of the device. Compared with bottom-contact devices, leakage current is reduced by roughly one order of magnitude, and on-state current is enhanced by almost one order of magnitude. The performance of the device is almost the same as that of a top-contact device. The low-dielectric polymer may play two roles to improve OTFT performance. One is that this structure influences electric-field distribution between source/drain electrodes and semiconductor and enhances charge injection. The other is that the polymer influences growth behavior of CuPc thin films and enhances physical connection between source/drain electrodes and semiconductor channel. Advantages of the OTFT having bottom-contact structure make it useful for integrated plastic electronic devices.

Preparation, structure and some physical properties of scheelite-related AgLnMo(2)O(8) compounds

We present the synthesis of the AgLnMo(2)O(8) oxides with Ln = La-Nd, Sm, Gd, Tb and Y. These compounds represent a scheelite-related structure type characterized by MoO42- tetrahedrons. The IR spectra show three transmittance bands in the region of 1000-400 cm(-1), which correspond respectively to the nu(1), nu(2), and nu(3) modes of the tetrahedral MoO42- groups. All of AgLnMo(2)O(8) are insulator materials at room temperature. The temperature dependence of the magnetic susceptibilities of AgLnMo(2)O(8) (Ln = Ce-Nd, Sm, Gd, Tb) show Curie-Weiss Law behaviors with two anomalies occurring at low temperature, whereas AgLaMo2O8 and AgYMo2O8 both exhibit diamagnetic properties as expected. The magnetic moments at room temperature fit very well with those corresponding to rare earth sesquioxides. This suggests that rare earth ions exist in +3 oxidation state in all AgLnMo(2)O(8) compounds.

LIGHT-ASSISTED OXIDATIVE DOPING OF POLYANILINES

A novel doping phenomenon of fully reduced polyaniline and poly-o-methyl-aniline, "light-assisted oxidative doping", was found for the first time. The doping reaction was followed by FTIR, UV-VIS, ESR and electrical conductivity measurements. It was shown that the fully reduced polyanilines in the form of HCl-salts undergo a spontaneous transition from an insulator or semiconductor to a conductor when exposed to air and light, and their final molecular chain structures are analogous to those found in HCl-doped common polyanilines.

高强度瓷绝缘子的矿物组成和显微结构研究

以矿物学理论为基础，采用XRD、AAS、TEM和OM等分析仪器，对国产70kN、日本120kN和210kN高强度瓷绝缘子的化学成分、显微结构等特征进行了分析，找出造成国内外瓷绝缘子性能差异的主要因素。并对贵州地区的高强瓷非金属矿物原料进行了较系统的矿物学研究，确定了6个主要原料基地。在以上研究的基础上，优化设计了420kN和300kN高强度瓷绝缘子的配方及相关生产工艺。并对烧结出420kN高强度瓷绝缘子的化学成分与显微结构进行了研究分析。得到的主要结论如下： （1）对比国内外高强瓷得出，造成国内高强瓷性能差的主要因素是化学成分和显微结构。国内70kN样品含有较高的K2O和TiO2，严重超过了高强瓷标准配方值，而国外配方恰好落在标准值范围内；国内70kN样品晶相含量仅为35%，而国外210kN样品的晶相含量为48%，且晶粒细小分布均匀，玻璃相和气孔相含量也比国内产品少且分布均匀。 （2）采用XRD对贵州地区矿物原料进行分析，最终选定了毕节、大方6个高强瓷原材料产地。这些基地粘土类矿物原料，具有可塑性好，有害矿物含量少，化学成分中Si、Al比适中，Fe、Ti等杂质元素含量低的特点；铝氧类矿物具有含Al2O3含量高且杂质元素少的特点，是制备高强度瓷绝缘子的优质原料。 （3）在主要使用贵州所产的矿物原料基础上，结合国内外高强瓷的性能差异，优化设计了300kN和420kN高强瓷的配方和工艺。其中将坯料的颗粒度组成设定在：≥5µm43-48%，≥10µm25-31%，≥20µm5-12%，并采用合理烧结制度下烧结出420kN高强瓷，其烧结温度范围在13001400℃，最终产品通过IEC检测且显微结构较好。