Observation of defects in GaN epilayers

GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.

Electronic investigation of self-organized InAs quantum dots

Deep Level Transient Spectroscopy (DLTS) has been applied to investigate the electronic properties of self-organized InAs quantum dots. The energies of electronic ground states of 2.5ML and 1.7ML InAs quantum dots (QDs) with respect to the conduction band of bulk GaAs are about 0.21 eV and 0.09 eV, respectively. We have found that QDs capture electrons by lattice relaxation through a multi-phonon emission process. The samples are QDs embedded in superlattices with or without a 500 Angstrom GaAs spacing layer between every ten periods of a couple of GaAs and InAs layers. The result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers.

Material transport in self-assembled InAs/GaAs quantum dot ensemble

Introducing the growth interruption between the InAs deposition and subsequent GaAs growth in self-assembled quantum dot (QD) structures, the material transport process in the InAs layers has been investigated by photoluminescence and transmission electron microscopy measurement. InAs material in structures without misfit dislocations transfers from the wetting layer to QDs corresponding to the red-shift of PL peak energy due to interruption. On the other hand, the PL peak shifts to higher energy in the structures with dislocations. In this case, the misfit dislocations would capture the InAs material from the surrounding wetting layer and coherent islands leading to the reduction of the size of these QDs. The variations in the PL intensity and Linewidth are also discussed.

Deformation behaviour of electrodeposited nanocrystalline Ni with broad grain size distribution

In the present work, nanocrystalline Ni (nc-Ni) with a broad grain size distribution (BGSD) of 5-120 nm and an average grain size of 27.2 nm was prepared. The BGSD nc-Ni sample shows a similar strength and good ductility in comparison with electrodeposited nc-Ni with a narrow grain size distribution. The intracrystalline dislocation network was observed in the post-deformed microstructure confirming the conventional intracrystalline dislocation sliding mechanism in BGSD nc-Ni. The uniaxial tensile loading-unloading-loading deformation shows BGSD nc-Ni has the capability to store dislocations in the grain interior, which is very limited compared with that of coarse grained metals. For BGSD nc-Ni, the strain rate sensitivity of flow stress m enhances with decreasing strain rate. At the strain rate of 5 x 10(-6) s(-1), m was estimated to be 0.055. At the corresponding strain rate, the enhanced ductility along with the decreased strength was achievable, indicating activation of other deformation mechanisms, e. g. grain boundary sliding or diffusion.

Dislocation nucleation governed softening and maximum strength in nano-twinned metals

In conventional metals, there is plenty of space for dislocations-line defects whose motion results in permanent material deformation-to multiply, so that the metal strengths are controlled by dislocation interactions with grain boundaries(1,2) and other obstacles(3,4). For nano-structured materials, in contrast, dislocation multiplication is severely confined by the nanometre-scale geometries so that continued plasticity can be expected to be source-controlled. Nano-grained polycrystalline materials were found to be strong but brittle(5-9), because both nucleation and motion of dislocations are effectively suppressed by the nanoscale crystallites. Here we report a dislocation-nucleation-controlled mechanism in nano-twinned metals(10,11) in which there are plenty of dislocation nucleation sites but dislocation motion is not confined. We show that dislocation nucleation governs the strength of such materials, resulting in their softening below a critical twin thickness. Large-scale molecular dynamics simulations and a kinetic theory of dislocation nucleation in nano-twinned metals show that there exists a transition in deformation mechanism, occurring at a critical twin-boundary spacing for which strength is maximized. At this point, the classical Hall-Petch type of strengthening due to dislocation pile-up and cutting through twin planes switches to a dislocation-nucleation-controlled softening mechanism with twin-boundary migration resulting from nucleation and motion of partial dislocations parallel to the twin planes. Most previous studies(12,13) did not consider a sufficient range of twin thickness and therefore missed this strength-softening regime. The simulations indicate that the critical twin-boundary spacing for the onset of softening in nano-twinned copper and the maximum strength depend on the grain size: the smaller the grain size, the smaller the critical twin-boundary spacing, and the higher the maximum strength of the material.

Mechanical Behavior of Nanometer Ni by Simulating Nanoindentation

An indentation simulation of the crystal Ni is carried out by a molecular dynamics technique (MD) to study the mechanical behavior at nanometer scales. Indenter tips with both sphere shape and conical shape with 60 cone angle are used, and simulation samples with different crystal orientations are adopted. Some defects such as dislocations and point defects are observed. It is found that nucleated defects (dislocations, amorphous atoms) are from the local region near the pin tip or the sample surface. The temperature distribution of the local region is analyzed and it can explain our MD simulation results.

Mechanical Behavior of Nanometer Ni by MD Simulation

The indention simulation of the crystal Ni is carried out by molecular dynamics technique (MD) to study the mechanical behavior at nanometer scales, the indenter tips with sphere shape is used. Some defects such as dislocations, point defects are observed. It is found that defects (dislocations, amorphous) nucleated is from local region near the pin tip or the sample surface. The temperature distribution of local region is analyzed and it can explain our MD simulation result.

Knotted wave dislocation with the hopf invariant

We study the wave dislocations with an induced gauge potential. The topological current characterized the wave dislocations is constructed with the dual of Abelian gauge field. And the topological charges and locations of the wave dislocations are determined by the phi-mapping topological current theory. Furthermore, it is shown that the knotted wave dislocations can be described with a Hopf invariant in the wave field. At last we discussed the evolution of the knotted wave dislocations.

The effects of the annealing time on helium implantation in Si

The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. (C) 2010 Elsevier B.V. All rights reserved.

Microstructure and mechanical properties of Mg-4Al-4Nd-0.5Zn-0.3Mn alloy

Mg-4Al-4Nd-0.5Zn-0.3Mn alloy was prepared by metal mould casting method. Microstructure, aging behavior, mechanical properties and fracture morphology of the alloy were investigated. The results showed that alpha-Mg, Al-11 Nd-3, Al2Nd and Mg-32(Al,Zn)(49) phases were the main phases of the as-cast alloy. And the long rod-like Al-11 Nd-3 phase was decomposed to granular Al2Nd through T6 heat treatment. The tensile strength was also enhanced by T6 treatment. The yield strength was increased by 17% and 21% at RT and 150 degrees C, respectively. It was mainly because that the precipitates were refined through T6 treatment and this became more benefit to hinder dislocations slipping.

Microstructures and mechanical properties of extruded Mg-8Gd-0.4Zr alloys containing Zn

Microstructures and mechanical properties of the Mg-8Gd-xZn-0.4Zr (x = 0, 1 and 3 wt.%) alloys in the as-cast, as-extruded and extruded-T5 conditions, have been investigated. The peak-aged Mg-8Gd-1Zn-0.4Zr alloy during isothermal ageing at 423 K acquires highest mechanical properties, with the highest ultimate tensile strength and yield tensile strength of 314 and 217 MPa, respectively. Addition of Zn has obvious effect on age hardening responses, especially for 1 wt.% Zn addition. It is due to a uniform distribution of beta' phase which can impede the movement of dislocations. However, addition of 3 wt.% Zn to the Mg-8Gd-0.4Zr alloy leads to a precipitation of Mg3Zn3Gd2 phase (W-phase). This phase is incoherent with interface of the matrix and becomes cores of the fracture in tensile test at room or elevated temperature.

Study on crystalline morphology of poly(L-lactide)-poly(ethylene glycol) diblock copolymer

Crystallization behavior, structural development and morphology evolution in a series of diblock copolymers Of poly(L-lactide)-blockpoly(ethylene glycol) (PLLA-b-PEG) were investigated via differential scanning calorimetry, wide-angle X-ray diffraction, polarized optical microscopy and atomic force microscopy. In these copolymers, both blocks are crystallizable and biocompatible. It was interesting that these PLLA-b-PEG diblock copolymers could form spherulites with banded textures, which was undercooling dependent. Single crystals with an abundance of screw dislocations were also observed via AFM. Such results indicated that these ringed spherulites and single crystals were formed during the crystallization of the PLLA blocks.

Observation of twisting growth of branched polyethylene single crystals formed from the melt

The twisting growth of a branched polyethylene single crystal formed from the melt was observed directly by means of transmission electron and atomic force miscroscopy. The surface stress asymmetry arising from the asymmetry of the surface-fold structure and, chain tilting resulted in the twisting growth of the single crystals. The handedness of the twisting lamellae was consistent With the chain-tilting direction. When multilayer lamellae piled up in a thicker film, the lamellar twist would be inevitably causing screw dislocations.

Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate

An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit.

Morphology and structure of poly(aryl ether ketone ketone) containing isophthaloyl moieties crystallized from dilute solution

Spherulites and lamellar single crystals of poly(aryl ether ketone ketone) containing isophthaloyl moieties (PEKK(I)) were obtained from dilute alpha-chloronaphthalene solution. The morphology and structure of the spherulites and single crystals were studied by electron microscopy and electron diffraction. The spherulites were found to consist of elongated lamellar branches that grow with the b crystallographic axis in the radial direction. Single crystals possess a similar habit, with b parallel to the long axis, a transverse, and c perpendicular to the lamellae plane. High-resolution images of the PEKK(I) crystals which show the perfection of and defects in the crystals, were obtained, and many defects or dislocations a,ere observed. (C) 1997 Elsevier Science Ltd.