P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering

P-doped ZnO films were deposited on n-Si substrate by radio-frequency magnetron sputtering. Hall measurements revealed that the films annealed in situ at 750 degrees C in an oxygen ambient at a pressure of 1.3x10(-3)-3.9x10(-3) Pa showed p-type behavior with a hole concentration of 2.7x10(16)-2.2x10(17) cm(-3), a mobility of 4-13 cm(2)/V s, and a resistivity of 10.4-19.3 Omega cm. Films annealed at 750 degrees C in a vacuum or in oxygen ambient at higher pressures (5.2x10(-3) and 6.5x10(-3) Pa) showed n-type behavior. Additionally, the p-ZnO/n-Si heterojunction showed a diodelike I-V characteristic. Our results indicate that P-doped p-type ZnO films can be obtained by annealing in oxygen ambient at very low pressures. (c) 2006 American Institute of Physics.

Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908

Si0.75Ge0.25/Si/Si0.5Ge0.5 trilayer asymmetric superlattices were prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The nonlinear optical response caused by inherent asymmetric interfaces in this structure predicted by theories was verified by in-plane optical anisotropy in (001) plane measured via reflectance difference spectroscopy. The results show Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice is optically biaxial and the two optical eigen axes in (001) plane are along the directions [110] and [-110], respectively. Reflectance difference response between the above two eigen axes can be influenced by the width of the trilayers and reaches as large as similar to 10(-4)-10(-3) in 15-period 2.7 nm-Si0.75Ge0.25/8 nm-Si/1.3 nm-Si0.5Ge0.5 superlattice when the normal incident light wavelength is in the range of 500-1100 nm, which is quite remarkable because the optical anisotropy does not exist in bulk Si.

Determination of the absorption for incident light propagating parallel through the guest-host polymer film waveguide

Guest host polymer thin films of polymethyl methacrylate (PMMA) incorporated with (4'-nitrobenzene)-3-azo-9-ethylcarbazole (NAEC) were fabricated by spin coating and then poled by the method of corona-onset poling at elevated temperature. The absorption mechanism of the polymeric film, which is very important for the optical transmission losses and directly relates to the orientation of chromophore NAEC in polymer PMMA, was investigated in detail. From the UV-visible absorption spectra for NAEC/PMMA film before and after being poled, we determined the change of absorption coefficient kappa with the wavelength and approximately calculated the maximum absorption A(parallel tomax) as 3.46 for incident light propagating parallel through the film, i.e. the ordinary polarized light, which cannot be directly measured in the spectro photometer. (C) 2002 Elsevier Science Ltd. All rights reserved.

Pressure dependence of Mn2+ luminescence in differently sized ZnS : Mn nanoparticles

The pressure behavior of Mn2+ emission in the 10-, 4.5-, 3.5-, 3-, and 1-nm-sized ZnS:Mn2+ nanoparticles is investigated. The emission shifts to lower energies with increasing pressure, and the shift rate (the absolute value of the pressure coefficient) is larger in the ZnS:Mn2+ nanoparticles than in bulk. The pressure coefficient increases with the decrease in particle size with the 1-nm-sized particles as an exception. Pressure coefficient calculations based on the crystal field theory are in agreement with the experimental results. The pressure dependence of the emission intensity is also size dependent. For nanoparticles 1 and 3 nm in size, the luminescence intensity of Mn2+ decreases dramatically with increasing pressure, while, for bulk and particles with average sizes of 3.5, 4.5, and 10 nm, the luminescence intensity of Mn2+ is virtually unchanged at different pressures. The bandwidth increases faster with increasing pressure for smaller particles. This is perhaps due to the fact that there are more Mn2+ ions at the near-surface sites and because the phonon frequency is greater for smaller particles. These new phenomena provide some insight into the luminescence behavior of Mn2+ in ZnS:Mn2+ nanoparticles.

Optical properties of NAEC-PMMA nonlinear polymeric thin film

Novel guest nonlinear optical (NLO) chromophore molecules (4-nitrobenzene)-3-azo-9-ethylcarbazole (NAEC) were doped in poly (methyl methacrylate) (PMMA) host with a concentration of approximately 15% by weight. For a useful macroscopic electro-optic (EO) effect, these NLO molecules NAEC were arranged in a noncentrosymmetric structure in the host polymer by corona-onset poling at elevated temperature (COPET). For applying NAEC-PMMA polymer in optical devices such as EO switch, its optical properties have been investigated. The UV/Visible absorption spectra for the unpoled and poled polymer film were determined. The refractive index of the film was also determined from measurements of the coupling angles with the reflective intensity at 632.8 nm wavelength. Using the simple reflection technique, the EO coefficient 33 value was measured as 60 pm/V at 632.8 nm wavelength. The second-order nonlinear coefficient d(33) was characterized by the second-harmonic-generation (SHG) experimental setup and the calculated d(33) value reached 18.4 pm/V at 1064 nm wavelength. The relation between the second-order nonlinear coefficients d(33) and d(13) for the poled polymer film was also discussed in detail and the ratio d(33)/d(13) value was obtained as 3.3. (C) 2002 Kluwer Academic Publishers.

Pressure behavior of Te isoelectronic centers in ZnS : Te

ZnS:Te epilayers with Te concentration from 0.5% to 3.1% were studied by photoluminescence under hydrostatic pressure at 15 K. Two emission bands related to the isolated Te-1 and Te-2 pair isoelectronic centers were observed in the samples with Te concentrations of 0.5% and 0.65%. For the samples with Te concentrations of 1.4% and 3.1%, only the Te-2-related peak was observed. The pressure coefficients of all the Te-1-related bands were found to be unexpectedly much larger than that of the ZnS band gap. The pressure coefficients for all the Te-2-related bands are, however, rather smaller than that of ZnS band gap as usually observed. Analysis based on a Koster-Slater model indicates that an increase of the valence bandwidth with pressure is the main reason for the faster pressure shift of the Te-1 centers, and the huge difference in the pressure behavior of the Te-1 and Te-2 centers is due mainly to the difference in the pressure-induced enhancement of the impurity potential on the Te-1 and Te-2 centers. (C) 2002 American Institute of Physics.

Determination of the macroscopic optical properties for the NAEC/PEK-c guest-host polymer films

The polyetherketone (PEK-c) guest-host polymer films doped with (4'-nitro)-3-azo-9-ethyl-carbazole (NAEC) were prepared. The films were poled by corona-onset poling at elevated temperature (COPET). The orientational order parameter of the chromophores NAEC in poled polymer film was determined by measuring the absorption spectra of the films before and after being poled. By using the two-level model, the measured dispersion of the refractive index of the polymer film, and the dispersion of the first hyperpolarizability of chromophore NAEC, the dispersion of the macroscopic second-order nonlinear optical (NLO) and linear electrooptic (EO) coefficients was evaluated for the NAEC/PEK-c guest-host polymer film. (C) 2001 Elsevier Science Ltd. All rights reserved.

Measurement of the optical transmission modes and losses of the poled guest-host polymer NAEC/PEK-c planar waveguides

The polyetherketone (PEK-c) guest-host polymer planar waveguides doped with (4'-nitro)-3-azo-9-ethyl-carbazole (NAEC) were prepared. The waveguide films were poled by corona-onset poling at elevated temperature (COPET), and the corona poling setup includes a grid voltage making the surface-charge distribution uniform. By using the prism-in coupling method, the dark-line spectrum given by the reflected intensity versus the angle of incidence have been obtained, and the optical transmission losses of mth modes have been measured for the poled polymer waveguides at lambda = 632.8 nm. The measurement result showed that the optical loss of the fundamental mode is less than 0.7 dB cm(-1) for the TE polarization. (C) 2000 Elsevier Science Ltd. All rights reserved.

甚短距离光传输技术

本书从光电子器件及其在光通信领域的应用出发，介绍了甚短距离光传输技术的组成、原理、实现方案、技术性能、关键技术以及在高速互连领域内的应用等。本书重点阐述了垂直腔面发射激光器的原理、工艺和特性；10gb/s和40gb/s传输方案的具体实现及其性能指标；甚短距离光传输涉及到的各项关键技术，如新型多模光纤技术、cwdm复用技术、硅探测器技术、高速光电集成(oeic)技术以及相关高速网络技术等。

纳米半导体技术

本书介绍了纳米半导体材料的定义、性质及其在未来信息技术中的地位的同时，主要介绍了纳米半导体材料制备的方法和共性关键技术，几种常用的纳米半导体材料的评价技术和应变自组装半导体量子点(线)的尺寸、密度分布、形貌、组分及结构特性的实验研究，纳米半导体材料的电子结构、光学和电学性质，基于子带跃迁的量子级联激光器的工作原理、特性和它的发展现状及其应用前景分析，最后重点介绍了纳米半导体器件及应用。本书适合于从事或对纳米半导体科学技术有兴趣的科研工作者、教师、研究生、本科生和工程技术人员阅读，有些章节可作为科普读物。

微电子与光电子集成技术

微电子技术与光电子技术紧密结合，相互渗透，必将推进信息技术及相关的高新技术进入新的发展阶段。本书共分为9章，从技术基础和实际应用的角度出发，着重对微电子与光电子集成技术相关的工艺基础、基本原理和关键集成技术进行了详细阐述，主要内容包括光发射器件、光电探测器、光波导器件、光电子专用集成电路、硅基光电子集成回路、甚短距离光传输技术以及微电子与光电子混合集成技术等。 微电子与光电子集成技术的实用化进程，必将为21世纪科学技术的发展作出重大贡献。然而，微电子与光电子集成技术是信息技术发展的一个崭新方向，虽然各项关键技术的发展取得了一定的进步，但还存在诸多难题需要进一步解决和完善。 本书主要为从事集成光电子和光通信等相关技术研究的科研人员提供参考。

光电子器件微波封装和测试

本书总结了作者多年来的工作经验和近期研究成果，系统地介绍了高速光电子器件测试和微波封装设计方面的实用技术，先进性、学术性和实用性兼备。全书共十一章，内容包括半导体激光器、光调制器和光探测器三种典型高速光电子器件的微波封装设计，网络分析仪扫频测试法、小信号功率测试法、光外差技术等小信号频率响应特性测试方法及测试系统校准方法，数字和模拟通信光电子器件大信号频率响应特性测试方法，光电子器件本征响应特性分析和应用，光谱与频谱分析技术的总结。

布尔函数的非线性度量及其构造

布尔函数或者向量布尔函数是很多序列密码和分组密码的核心构件之一，因此这些函数密码学性质的好坏直接关系到密码系统的安全性和稳定性，所以构造密码学性质好的布尔函数或者分析布尔函数的密码学性质是一个十分有意义的研究工作。本文对有关问题进行了深入研究并得到一些有意义的结果。本文的主要结果有： (1) 对低差分均匀性函数的研究。由于完全非线性函数在几何、编码理论、密码学和设计中都有很多重要的应用，但是对完全非线性函数的性质研究比较少，因此本文研究了完全非线性函数的一些性质，得到了完全非线性函数的几个充要条件；几乎完全非线性函数抗击差分攻击是最优的，但是有几类已知的几乎完全非线性函数抗击线性攻击的能力还不知道，因此本文研究了三类几乎完全非线性函数抗击线性攻击的能力，即研究了三类几乎完全非线性函数非线性度的下界；本文还构造了差分均匀性为4的函数，这些函数由于其差分均匀性较低，同样能够较好的抗击差分攻击。 (2) 对布尔函数高阶非线性度的研究。非线性度是衡量布尔函数抗击线性攻击的能力，相对应的高阶非线性度是衡量布尔函数抗击高阶线性攻击的能力。在现有文献中研究布尔函数高阶非线性度的文献很少，因此本文研究了四类具有较高非线性度的布尔函数的二阶非线性度下界，这些下界刻画了这四类布尔函数抗击二阶线性攻击的能力。 (3)对单项式bent函数和半-bent函数的研究。单项式bent函数在bent函数的研究中有重要的意义，但是现在知道的单项式bent函数并不多，本文在已有的单项式bent函数的基础上构造了一类新的单项式bent函数；bent函数虽然有最优的非线性度，但是由于bent函数不具有平衡性，因此bent函数并不能直接用到密码系统中，于是本文构造了几类非线性度较高并且可以使其平衡的半-bent函数。同时本文还给出了一种由已有的半-bent函数或者已有的bent函数构造新的半-bent函数的方法，这种方法的优点是不增加新函数变元的个数。

汉语拼音的短韵母编码与汉字输入

《汉语拼音方案》在中文信息处理中具有重要地位，拼音输入法更是电脑汉字输入的大众化方法。由于韵母采用1～4个字母，显得长短不齐。本文提出短韵母编码方案，除原来单字母韵母外，其他韵母用{aoeiuv}中的两个字母来表示，使得拼音编码变短。由于韵母采用的字母与声母采用的20个字母不同，在键盘输入汉字时可以采用“声韵声”方式输入词组。此方案可用于字母键盘，在数字键盘更有优势。声调的4个键与短韵母编码的6个键互不相同，拼音串输入时容易切分各字拼音，即使省略了韵母。每对模糊音设有3个数字键盘编码，以方便部分字音需要模糊的用户。

优化MISTY型结构的伪随机性

该文对4轮MISTY和3轮双重MISTY两种结构进行了优化。在保持其安全性不变的情况下，把4轮MISTY结构中第1轮的伪随机置换，用一个XOR-泛置换代替，第2，第3轮采用相同的伪随机置换，3轮结构中第1轮的伪随机置换用XOR-泛置换代替，其它轮相同。伪随机置换的数量分别由原来的4个变为2个，3个变为1个，从而缩短了运行时间，节省了密钥量，大大降低了结构的实现成本。