247 resultados para single crystal epilayer


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通过使用基于非正交网格有限体积法的FLUTRAPP(fluid flow and transport phenomena pro-gram)程序模拟了工业8 in单晶硅提拉法生长过程.数值模拟结果表明,流场及提拉速率在单晶硅生长过程中具有振荡特性,提拉速率的振荡周期大约为2 min.尖形磁场的引入能够抑制坩埚中熔体流动的振荡,减小提拉速率的振幅,从而有利于提高所生长单晶的质量.

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In this work, the results of numerical simulations of X-ray fluorescence holograms and the reconstructed atomic images for Fe single crystal are given. The influences of the recording angles ranges and the polarization effect on the reconstruction of the atomic images are discussed. The process for removing twin images by multiple energy fluorescence holography and expanding the energy range of the incident X-rays to improve the resolution of the reconstructed images is presented. (c) 2005 Elsevier B.V. All rights reserved.

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Deep-subwavelength gratings with periodicities of 170, 120, and 70 nm can be observed on highly oriented pyrolytic graphite irradiated by a femtosecond (fs) laser at 800 nm. Under picosecond laser irradiation, such gratings likewise can be produced. Interestingly, the 170-nm grating is also observed on single-crystal diamond irradiated by the 800-nm fs laser. In our opinion, the optical properties of the high-excited state of material surface play a key role for the formation of the deep-subwavelength gratings. The numerical simulations of the graphite deep-subwavelength grating at normal and high-excited states confirm that in the groove the light intensity can be extraordinarily enhanced via cavity-mode excitation in the condition of transverse-magnetic wave irradiation with near-ablation-threshold fluences. This field enhancement of polarization sensitiveness in deep-subwavelength apertures acts as an important feedback mechanism for the growth and polarization dependence of the deep-subwavelength gratings. In addition, we suggest that surface plasmons are responsible for the formation of seed deep-subwavelength apertures with a particular periodicity and the initial polarization dependence. Finally, we propose that the nanoscale Coulomb explosion occurring in the groove is responsible for the ultrafast nonthermal ablation mechanism.

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Theoretical and experimental results are presented for simultaneous multibeam coupling in photorefractive SBN:Ce. Within a single crystal, multiple signals are amplified through a coupling process that employs a single pump. The coupling gain of each signal results from coupling both between the pump and the signal and between different signals. The amount of gain that each signal receives is dependent on the intensity of the incident signal; thus a competition for the gain exists among the various signals.

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Smooth thin films of three kinds of azo dyes of 2-(5'-tert-butyl-3'-azoxylisoxazole)-1, 3-diketones and their copper (II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on a glass substrate in the 300-600 nm wavelength region were measured. Optical constants (complex refractive index N=n+ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon(epsilon=epsilon(1)+i epsilon(2)), absorption coefficients alpha as well as reflectance R of thin films were then calculated. In addition, one of the copper (II)-azo complex thin film prepared on glass substrate with an Ag reflective layer was also studied by atomic force microscopy (AFM) and static optical recording. AFM study shows that the copper (II)-azo complex thin film is very smooth and has a root mean square surface roughness of 1.89 nm. Static optical recording shows that the recording marks on the copper (II)-azo complex thin film are very clear and circular, and the size of the minimal recording marks can reach 200 nm. (c) 2004 Elsevier B.V. All rights reserved.

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Thin films of four nickel(II) and copper(II) hydrazone complexes, which will hopefully be used as recording layers for the next-generation of high-density recordable disks, were prepared by using the spin-coating method. Absorption spectra of the thin films on K9 optical glass substrates in the 300-700 nm wavelength region were measured. Optical constants (complex refractive indices N) and thickness d of the thin films prepared on single-crystal silicon substrates in the 275-675 nm wavelength region were investigated on a rotating analyzer-polarizer scanning ellipsometer by fitting the measured ellipsometric angles (Psi(lambda) and Delta(lambda)) with a 3-layer model (Si/dye film/air). The dielectric functions epsilon and absorption coefficients alpha as a function of the wavelength were then calculated. Additionally, a design to achieve high reflectivity and optimum dye film thickness with an appropriate reflective layer was performed with the Film Wizard software using a multilayered model (PC substrate/reflective layer/dye film/air) at 405 nm wavelength.

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Thiazolyl heterocyclic azo dye and its metal (Ni2+, Co2+)-azo complexes were synthesized. Their structures were confirmed by elemental analysis, UV-VIS absorption spectra, FT-IR, H-1 NMR and MALDI-MS. The thermal properties of metal complexes were studied by DSC-TGA. The optical constants (complex refractive index N=n + ik) and thickness of the complex thin films on polished single-crystal silicon substrates were investigated on a scanning ellipsometer. Results indicate that thiazolyl metal-azo complexes possess good optical and thermal properties. They would be a promising recording medium candidate for NVD with the Super-resolution near field structure (Super-RENS) technology. (c) 2007 Elsevier B.V. All rights reserved.

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Smooth thin films of three kinds of nickel(II)-azo complexes were prepared by the spin-coating method. Absorption spectra of the thin films on K9 glass substrate in the 300-600 nn wavelength region were measured. Optical constants (complex refractive index N = n + ik) and thickness of the thin films prepared on single-crystal silicon substrate in the 300-600 nm wavelength region were investigated on rotating analyzer-polarizer type of scanning ellipsometer, and dielectric constants epsilon (epsilon = epsilon(1) + i epsilon(2)), absorption coefficients a as well as reflectance R of thin films were then calculated at 405 nm. In addition, in order to examine the possible use of nickel(II)-azo complex thin film as an optical recording medium, one of the nickel(II)-azo complex thin film prepared on K9 glass substrate with an Ag reflective layer was also studied by atomic force microscopy and static optical recording. The results show that the nickel(II)-azo complex thin film is smooth and has a root mean square surface roughness of 2.25 nm, and the recording marks on the nickel(II)-azo complex thin film are very clear and circular, and their size can reach 200 nn or less. (c) 2006 Elsevier Ltd. All rights reserved.

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合成了2-(2-氨基-6-乙氧基苯并噻唑基偶氮)-5-(N,N-二乙基氨基)三氟甲基磺酰苯胺偶氮染料(EBTDATFS)及其与乙酸镍、乙酸钴、乙酸铜、乙酸锌等金属盐鏊合的金属鏊合物。通过红外光谱、紫外-可见吸收光谱和MALDI质谱等对染料及其金属鏊合物进行了结构表征;使用旋涂方法在K9玻璃和抛光的单晶硅基片上制备薄膜;研究了镍金属鏊合物的热学性能;使用椭偏仪研究了Ni和Zn鏊合物的光学常数。结果表明:4种金属鏊合物薄膜最大吸收光谱为621-629nm,且长波边吸收峰陡峭;TGA-DSC测试结果表明镍金属鏊

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介绍了一种基于纳米粉末真空烧结技术的新型固体激光材料——Yb:Y2O3多晶陶瓷的制备工艺、物理化学特性、能级结构和光谱特性,并与Yb:YAG单晶进行了对比.采用紧凑型有源镜激光器(CAMIL)的抽运方式,验证了Yb:Y2O3透明陶瓷的激光输出性能.在35W的最大抽运功率下,得到波长1078nm,功率10.5w的连续激光输出,斜率效率达到37.5%.实验中还观察到激光输出波长随抽运功率增加而红移以及随输出耦合镜变化而漂移的现象.Yb:Y2O3多晶陶瓷是一种理想的激光材料,不仅具有与Yb:YAG单晶同样优秀的

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By employing a continuous-wave (CW) Ti:sapphire tunable laser as a pumping source and a Cr4+:YAG single crystal as the saturable absorber (SA), a passively Q-switched Nd:YAG ceramic laser has been demonstrated at room temperature. With an absorbed pumping power of 541 mW at 808 nm, an average output power of 61 mW at 1064 nm has been obtained with 3.5 mu J pulse energy, 15 ns pulse width and 18.18 kHz repetition rate, and the corresponding slope-efficiency is 15%. The relationships between the pulse width, repetition rate, average output power, pulse energy, and peak power on the absorbed pumping power for different initial transmission of the Cr4+:YAG SA are discussed separately. The Nd:YAG ceramic is one of the most promising laser materials for compact, efficient, all-solid-state pulsed lasers.

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In this paper, a highly efficient Ti:sapphire end-pumped 1 at.-% Nd:YAG ceramic laser that is comparable in efficiency with Nd:YAG single crystal lasers has been developed. Optical absorption and emission spectra for Nd:YAG ceramics have been measured. With 673-mW pumping, 295-mW laser output at 1064 nm has been obtained. The laser threshold is only 13 mW. Deducted the transmitted light, the corresponding optical-to-optical conversion efficiency is 58.4%. The lasing characteristics of Nd:YAG ceramic are nearly equal to those of Nd:YAG single crystal.

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By employing a uniformly compact side-pumping system, a high-energy electro-optical Q-switched Nd:YAG ceramic laser has been demonstrated. With 420 W quasi-cw laser-diode-array pumping at 808 ran and a 100 Hz modulating repetition rate, 50 mJ output energy at 1064 nm was obtained with 10 ns pulse width, 5 W average output power, and 5 MW peak power. Its corresponding slope efficiency was 29.8%. The laser system operated quite stably and no saturation phenomena have been observed, which means higher output energy could be expected. Laser parameters between ceramic and single-crystal Nd:YAG lasers have been compared, and pulse characteristics of Nd:YAG ceramic with different repetition rate have been investigated in detail. The still-evolving Nd:YAG ceramics are potential super excellent media for high-energy laser applications. (C) 2007 Optical Society of America.

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用扫描电镜(SEM)观察了化学沉积Ni-P合金薄膜/单晶硅基体的结构与颗粒度,利用X射线衍射(XRD)技术测试了其化学沉积后的残余应力,测量了激光热处理后残余应力的变化规律,分析了残余应力对磨损性能及界面结合强度的影响。实验结果表明,化学沉积Ni-P合金薄膜/硅基体的残余应力均表现为拉应力,经过激光热处理后残余应力发生了变化,由高值的拉应力变为低值的拉应力或压应力;薄膜残余应力对其磨损性能有明显的影响,其磨损量随着残余应力的减小而减小;薄膜与基体结合强度随着残余应力的增大而减小,合理地选择激光热处理参数可

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Transparent glass-ceramics containing beta-Ga2O3:Ni2+ nanocrystals were synthesized and characterized by X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy. Intense broad-band luminescence centering at 1200 nm was observed when the sample was excited by a diode laser at 980 nm. The room-temperature fluorescent lifetime was 665 mu s, which is longer than the Ni2+-doped ZnAl2O4 and LiGa5O8 glass-ceramics and is also comparable to the Ni2+-doped LiGa5O8 single crystal. The intense infrared luminescence with long fluorescent lifetime may be ascribed to the high crystal field hold by Ni2+ and the moderate lattice phonon energy of beta-Ga2O3. The excellent optical properties of this novel material indicate that it might be a promising candidate for broad-band amplifiers and room-temperature tunable lasers.