Environmentally stable ytterbium figure-of-eight fiber laser producing 177-fs pulses

Pulses of 177 fs and 1035 nm, with average power of 1.2 mW, have been generated directly from a passively mode-locked Yb-doped figure-of-eight fiber laser, with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. To our knowledge, these are the shortest pulses ever to come from a passively mode-locked Yb-doped figure-of-eight fiber laser. This represents a 5-fold reduction in pulse duration compared with that of previously reported passively mode-locked Yb-doped figure-of-eight fiber lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0 MHz. (c) 2007 Elsevier B.V. All rights reserved.

Generation of 207-femtosecond pulses from a ytterbium figure-of-eight fibre laser

We report the generation of 207-fs pulses with 1.2mW average power at 1036 nm directly from a passively mode-locked Yb-doped fibre laser with a nonlinear optical loop mirror for mode-locking and pairs of diffraction gratings for intracavity dispersion compensation. These results imply a 4-fold reduction in pulse duration over previously reported figure-of-eight cavity passively mode-locked Yb-doped fibre lasers. Stable pulse trains are produced at the fundamental repetition rate of the resonator, 24.0MHz. On the other hand, this laser offers a cleaner spectrum and greater stability and is completely self-starting.

SOA-based polarity-preserving all-optical wavelength conversion at 80Gbit/s: Wide conversion range, well dynamic characteristics and polarization insensitive

This letter presents the effective design of a tunable 80 Gbit/s wavelength converter with a simple configuration consisting of a single semiconductor optical amplifier (SOA) and an optical bandpass filter (OBPF). Based on both cross-gain and cross-phase modulation in SOA, the polarity-preserved, ultrafast wavelength conversion is achieved by appropriately filtering the blue-chirped spectral component of a probe light. Moreover, the experiments are carried out to investigate into the wavelength tunability and the maximum tuning range of the designed wavelength converter. Our results show that a wide wavelength conversion range of nearly 35 nm is achieved with 21-nm downconversion and 14-nm upconversion, which is substantially limited by the operation wavelength ranges of a tunable OBPF and a tunable continuous-wave laser in our experiment. We also exploited the dynamics characteristics of the wavelength converter with variable input powers and different injection current of SOA. (C) 2008 Wiley Periodicals, Inc.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

One-Dimensional InP-Based Photonic Crystal Quantum Cascade Laser Emitting at 5.36μm

An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithography instead of electron beam lithography and using inductively coupled plasma etching, four-period air-semiconductor couples are defined as Bragg reflectors at one end of the resonator. The spectral measurement at 80K shows the quasi-continuous-wave operation with the wavelength of 5.36μm for a 22μm-wide and 2mm-long epilayer-up bonded device.

A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.

Optical Pr operties of GaNAs and GaAsSb Semiconductors

Under short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from GaNx As1- x/GaAs SQWs. This new emission has totally different optical properties compared with the localized exciton transition in GaNx As1-x, and is attributed to the recombination of delocalized excitons in QWs. At the same time, a competition process between localized and delocalized exciton emissions in GaNx As1-x/GaAs quantum wells is observed in the temperaturedependent PL spectra under the short pulse excitation. This competition process for the first time, reveals the physical origin of the temperature-induced S-shaped PL peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. We have also investigated a set of GaNx As1- x samples with small nitrogen composition( x ＜ 1% )by PL, and time-resolved PL. After the PL dependence on temperature and excitation power and PL dynamics were measured, the new PL peak was identified as an intrinsic transition of alloy, rather than N-related bound states. This is the first observation in PL, showing that alloy state exists in GaNx As1- x materials even when N composition is smaller than 0.1%. Finally by selective excitation,both type-Ⅰ and type-Ⅱ transitions were observed simultaneously in GaAs1-xSbx/GaAs SQWs for the first time.

800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser

A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror with low temperature method and surface state method combined absorber is presented.With which passive Kerr lens mode locking of Ti∶Al2O3 laser pumped by argon ion laser is realized,which produces pulses as short as 40fs.The spectrum bandwidth is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

冷却储存实验环功率源的设计与计算

RF system of HIRFL-CSRe(cooling storage experimental ring)was designed by ourselves and manufactured domestically,which operates in the frequency range of 0.5~2.0 MHz at first and second harmonic modes.Based on detailed engineering calculation,the design of RF generator was completed.It will work not only in CW mode but also in the mode of ramping pulse modulation,and the maximum power is up to 70 kW.It satisfies the requirement of 10 kV maximum deceleration voltage to capture the irradiative beam and decel...中文摘要：对兰州重离子加速器冷却储存环实验环(CSRe)的高频系统功率源的设计作了详细的工程计算,工作频率范围为0.5～2.0MHz,工作于基波及二次谐波模式,发射机不仅能工作于点频连续波模式,而且还可以工作在扫频调制模式,输出最大功率达到70kW。满足最高加速或减速电压10kV的设计要求,能够用于捕获放射性次级束并将束流的能量从400MeV/u减速到30MeV/u。

Laser glazing of lanthanum magnesium hexaaluminate

Lanthanum magnesium hexaalumminate (LMA) is an important candidate for thermal barrier coatings due to its thermal stability and low thermal conductivity. On the other hand, laser glazing method can potentially make thermal barrier coatings impermeable, resistant to corrosion on the surface and porous at bulk. LMA powder was synthesized at 1600 degrees C by solid-state reaction, pressed into tablet and laser glazed with a 5-kW continuous wave CO2 laser.

Influence of laser-glazing on hot corrosion resistance of yttria-stabilized zirconia TBC in molten salt mixture of V2O5 and Na2SO4

Plasma-sprayed 8YSZ (zirconia stabilized with 8 wt% yttria)/NiCoCrAlYTa thermal barrier coatings (TBCs) were laser-glazed using a continuous-wave CO2 laser. Open pores within the coating surface were eliminated and an external densified layer was generated by laser-glazing. The hot corrosion resistances of the plasma-sprayed and laser-glazed coatings were investigated. The two specimens were exposed for the same period of 100 h at 900 degrees C to a salt mixture of vanadium pentoxide (V2O5) and sodium sulfate (Na2SO4). Serious crack and spallation occurred in the as-sprayed coating, while the as-glazed coating exhibited good hot corrosion behavior and consequently achieved a prolonged lifetime. The results showed that the as-sprayed 8YSZ coating achieved remarkably improved hot corrosion resistance by laser-glazing.

Facile synthesis of highly uniform octahedral LuVO4 microcrystals by a facile chemical conversion method

Uniform octahedral LuVO4 microcrystals have been successfully prepared through a designed two-step hydrothermal method. One-dimensional lutetium precursor was first prepared through a simple hydrothermal route. Subsequently, a well-shaped octahedral LuVO4 sample was synthesized at the expense of the wirelike precursors during the hydrothermal process. The whole process in this method was carried out in aqueous conditions without the use of any organic solvents, surfactant, or catalyst. The conversion process from nanowire precursor to octahedral product has been investigated in detail. The LuVO4 : Ln(3+) (Ln Eu, Dy, Sm, and Er) phosphors show strong light emissions with different colors coming from different activator ions under ultraviolet light excitation or low-voltage electron beam excitation. Furthermore, this general and facile method may be of much significance in the synthesis of many other lanthanide compounds with polyhedral morphology.

Identifying framework titanium in TS-1 zeolite by UV resonance Raman spectroscopy

Framework titanium in Ti-silicalite-1 (TS-1) zeolite was selectively identified by its resonance Raman bands using ultraviolet (W) Raman spectroscopy. Raman spectra of the TS-1 and silicalite-1 zeolites were obtained and compared using continuous wave laser lines at 244, 325, and 488 nm as the excitation sources. It was only with the excitation at 244 nm that resonance enhanced Raman bands at 490, 530, and 1125 cm(-1) appeared exclusively for the TS-1 zeolite. Furthermore, these bands increased in intensity with the crystallization time of the TS-1 zeolite. The Raman bands at 490, 530, and 1125 cm(-1) are identified as the framework titanium species because they only appeared when the laser excites the charge-transfer transition of the framework titanium species in the TS-1. No resonance Raman enhancement was detected for the bands of silicalite-1 zeolite and for the band at 960 cm(-1) of TS-1 with any of the excitation sources ranging from the visible tb UV regions. This approach can be applicable for the identification of other transition metal ions substituted in the framework of a zeolite or any other molecular sieve.