AlGaInAs-InPMicrocylinder Lasers Connected With an Output Waveguide

AlGaInAs-InPmicrocylinder lasers connected with an output waveguide are fabricated by planar technology. Room-temperature continuous-wave operation with a threshold current of 8 mA is realized for a microcylinder laser with the radius of 10 mu m and the output waveguide width of 2 mu m. The mode Q-factor of 1.2 x 10(4) is measured from the laser spectrum at the threshold. Coupled mode characteristics are analyzed by 2-D finite-difference time-domain simulation and the analytical solution of whispering-gallery modes. The calculated mode Q-factors of coupled modes are in the same order as the measured value.

COMPARISON BETWEEN THE INFLUENCES OF LAYER THICKNESSES AND ALAS MOLE FRACTION-X ON VERTICAL-CAVITY SURFACE-EMITTING LASERS

Based on the n(x, lambda), the calculation of the reflection spectrum for vertical cavity surface emitting lasers shows that the deviation of the central wavelength caused by the change of layer thickness is much more than that caused by the change of AlAs mole fractions. Therefore the control of the MBE growth rate is very important.

MEASUREMENT AND SIMULATION OF THE TURN-ON DELAY TIME JITTER IN GAIN-SWITCHED SEMICONDUCTOR-LASERS

The turn-on delay time jitter of four different unbiased gain-switched laser types is determined by measuring the temporal probability distribution of the leading edge of the emitted optical pulse. One single-mode 1.5-mu-m distributed feed-back laser and three multimode Fabry-Perot lasers emitting at 750 nm and 1.3-mu-m are investigated. The jitter is found to decrease for all lasers with increasing injection current. For multimode lasers it decreases from 8 ps excited slightly above threshold down to below 2 ps at three times the threshold current. The jitter of the distributed feedback (DFB) laser is a factor of 3-5 larger than the jitter of the three multimode lasers. A new model to predict the turn-on delay time jitter is presented and explains the experiments quantitatively.

EXTREMELY LOW THRESHOLD CURRENT, BURIED-HETEROSTRUCTURE STRAINED INGAAS GAAS MULTIQUANTUM WELL LASERS

A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-heterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 44.6% (0.53 mW/mA) and output power of more than 30 mW per facet were achieved in the same laser.