三种兰科植物的保护遗传学研究

本研究在野外调查的基础上，采用随机扩增多态DNA (RAPD)分析和形态学方法，研究了我国三种珍稀濒危兰科植物硬叶兜兰（Paphiopedilummicranthum）、麻栗坡兜兰（P. malipoense）和独花兰（Changnienia amoena）的遗传多样性与群体遗传结构，主要结果如下： 1．采用1 2个引物对分布于我国云贵地区的4个硬叶兜兰群体共161个体进行RAPD扩增和分析，得出物种水平的多态条带百分率（PPB）为71.6%，Nci的基因多样度(h)为0.217，Shannon多样性指数（1)为0.3301;4个群体的平均多样性水平为PPB=45.2%，h=0.1457，1= 0.2204：低于远交兰花的平均水平。分子方差分析(AMOVA)表明，在总遗传变异中，群体间遗传变异占20.31%．群体内占79.69%;POPGENE给出的基因分化系数 （Gst）为0.2958;遗传分化略高于远交物种的平均水平。空间自相关分析表明，所检测的两个群体中存在明显的空间结构，基因型在群体中以不同的小斑块存在。遗传距离和空间距离不存在相关关系。 2．用于麻栗坡兜兰的RAPD引物同上，但取样范围只有贵州的2个群体共10个个体。就所研究的个体柬看，麻栗坡兜兰的遗传多样性明显低于远交兰花物种的平均水平。物种水平上，多态条带百分率(PPB)为49.5%。Nei的基因多样度（h）为0. 1174， Shannon多样性指数(I)为0.1764：在群体水平上，上述三个指标的平均值则分别为12. 75%、0.0486和0.0712，均大大低于硬叶兜兰。然而，尽管作了种种努力，麻栗坡兜兰的取样个体数量仍很少，因此所得结果可能会有误差。 3．用16个引物对分布于河南、湖北、湖南、江西4个省11个独花兰群体共216个体进行了RA PD扩增和分析，独花兰在物种水平PPB=80. 7%，h=0.197．1=0. 3116;在群体水平，上述三个指标的平均值则分别为40. 9%、0.1247和0. 1902，均低于远交兰花的平均水平。AMOVA分析表明，11个独花兰群体间的遗传变异占43.48%，群体内的占56.52%：在神农架和新宁地区内部，群体间的遗传变异分别占13.68%和49.3g%(AMOVA)。POPGENE给出的11个群体的基因分化系数(Gst)为0.3580．神农架和新宁地区内的Gst，值分别为0.1194和0.2597。可见，群体间的遗传分化明显高于远交物种的平均水平。空间自相关分析表明，独花兰的遗传变异在群体内不存在明显的空间结构。群体之间的遗传距离和空间距离不存在相关关系。 4．对独花兰7个群体形态性状的分析发现，12个形态性状在群体内均有较高的变异性，cv值变动于0.022-0.30O。庐山群体(LS)在所有性状上的平均值均为最高。营养性状和花部性状的变异性基本一致。除花葶长和花距直径与某些花部性状之间没有显著的相关关系外，各性状之间均有显著的相关性。对XN4群体的统计没有发现假磷茎数目与其他性状之间存在显著相关性。 根据以上对硬叶兜兰、麻粟坡兜兰和独花兰遗传多样性和群体遗传结构韵研究，结合其他方面的资料;对三种兰花的濒危机制进行了初步的分析。首先，人为采挖和破坏是导致这些兰花物种濒危的直接原因，尤其是麻栗坡兜兰。其次， 适宜兰花生存的生境正在只益萎缩、退化和片段化。这两方面因素的共同作用导致上述兰花群体的数目和规模日益下降，由此引发的遗传多样性降低和遗传结构的改变进一步加剧其濒危状况。对于独花兰而言，较低的繁殖能力又使其生存状态雪上加霜。针对三个物种不同的繁殖特性和遗传学状况，提出如下保护措施。(1)硬叶兜兰由于繁殖能力较强、现存个体尚多，遗传多样性损失不甚严重，因此以保护其所在的生境为基础、实施原位保护，是比较合适的保护策略。(2)麻粟坡兜兰目前受破坏程度非常严重;所剩个体很少，遗传多样性较低，已经很难进行有效的原位保护。因此;应利用迁地保护手段抢救目前尚存的个体。(3)独花兰的繁殖能力较弱，因此在保护生境和严禁采摘的基础上，可采用人工授粉等方式，提高结实率、增加繁殖效率，促使其复壮：在进行迁地保护时，则应注意不同群体间存在较大遗传变异而群体内多样性较低这一现实。

Y-chromosome evidence of southern origin of the East Asian - Specific haplogroup O3-M122

The prehistoric peopling of East Asia by modern humans remains controversial with respect to early population migrations. Here, we present a systematic sampling and genetic screening of an East Asian-specific Y-chromosome haplogroup (O3-M122) in 2,332 individuals from diverse East Asian populations. Our results indicate that the O3-M122 lineage is dominant in East Asian populations, with an average frequency of 44.3%. The microsatellite data show that the O3-M122 haplotypes in southern East Asia are more diverse than those in northern East Asia, suggesting a southern origin of the O3-M122 mutation. It was estimated that the early northward migration of the O3-M122 lineages in East Asia occurred similar to 25,000-30,000 years ago, consistent with the fossil records of modern humans in East Asia.

孵化温度对中华鳖4种同工酶和肌肉蛋白基因表达的影响

应用聚丙烯酰胺梯度凝胶电泳 ,对不同温度 (常温 30～ 33℃和低温 2 2～ 2 4℃ )人工孵化的幼鳖肝、肌、肾、心、脑等不同组织的乳酸脱氢酶 (LDH)、异柠檬酸脱氢酶 (IDH)、葡萄糖 6 磷酸脱氢酶 (G 6 PD)和酯酶(EST)等 4种同工酶和肌肉蛋白进行分析研究。结果发现 :不同温度孵化的中华鳖同工酶表达无差异。LDH和IDH的基因表达有组织特异性 ,但不存在遗传多态性 ;G 6 PD和EST同工酶具有遗传多态性。低温孵化的个体的肌肉蛋白有别于常温孵化个体的特异蛋白带。

混养罗非鱼对对虾池浮游生物群落结构的影响

国家攀登B计划（PD－ B6 － 7 － 3）;国家自然科学基金（39430102 号）;国家九五攻关计划（96 － 922 － 02

Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films

We present a study of magnetic anisotropy by using magneto-transport and direct magnetization measurements on tensile strained (Ga,Mn)As films. The magnetic easy axis of the films is in-plane at low temperatures, while the easy axis flips to out-of-plane when temperature is raised or hole concentration is increased. This easy axis reorientation is explained qualitatively in a simple physical picture by Zeners pd model. In addition, the magneto-crystalline anisotropic resistance was also investigated experimentally and theoretically based on the single magnetic domain model. The dependence of sheet resistance on the angle between the magnetic field and [1 0 0] direction was measured. It is found that the magnetization vector M in the single-domain state deviates from the external magnetic field H direction at low magnetic field, while for high magnetic field, M continuously moves following the field direction, which leads to different resistivity function behaviors.

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.

A photonic wire-based directional coupler based on SOI

A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 mu m x 0.34 mu m, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 mu m, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 +/- 0.4 dB coupling loss between the taper fibers and the polished sides of the device. (c) 2008 Elsevier B.V. All rights reserved.

Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

Optical response of high-level bandgap in one-dimensional photonic crystal applying in-plane integration

A new broadband filter, based on the high level bandgap in 1-D photonic crystals (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si is designed by the plane wave expansion method (PWEM) and the transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-level bandgaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and the PC device. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes

Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by evaporation. Both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. A shift of 0.3 V at 300K is obtained at a fixed forward current after switching from N-2 to 10%H-2+N-2. The sensor responses under different concentrations from 50ppm H-2 to 10%H-2+N-2 at 373K are investigated. Time dependences of the device forward current at 0.5 V forward bias in N-2 and air atmosphere at 300 and 373K are compared. Oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. Finally, the decrease of the Schottky barrier height and sensitivity of the sensor are calculated.

Monolithically integrated transceiver with novel Y-branch by bundle integrated waveguide for fibre optic gyroscope

A novel Y-branch based monolithic transceiver with a superluminescent diode and a waveguide photodiode (Y-SDL-PD) is designed and fabricated by the method of bundle integrated waveguide (BIG) as the scheme for monolithic integration and angled Y-branch as the passive bi-directional waveguide. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10mW at 120mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than 1 dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x 8 degrees, resulting in good fibre coupling.

Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs

AlGaN-based resonant-cavity-enhanced (RCE) p-i-n photodetectors (PDs) for operating at the wavelength of 330 nm were designed and fabricated. A 20.5-pair AlN/Al0.3Ga0.7N distributed Bragg reflector (DBR) was used as the back mirror and a 3-pair AlN/Al0.3Ga0.7N DBR as the front one. In the cavity is a p-GaN/i-GaN/n-Al0.3Ga0.7N structure. The optical absorption of the RCE PD structure is at most 59.8% deduced from reflectance measurement. Selectively enhanced by the cavity effect, a response peak of 0.128 A/W at 330 nm with a half-peak breadth of 5.5 nm was obtained under zero bias. The peak wavelength shifted 15 nm with the incident angle of light increasing from 0 degrees to 60 degrees.

Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors

With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10 nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.

High-performance evanescently-coupled uni-traveling-carrier photodiodes

A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer.

Development of Swept Frequency Method for Measuring Frequency Response of Photodetectors Based on Harmonic Analysis

We develop a swept frequency method for measuring the frequency response of photodetectors; (PDs) based on harmonic analysis. In this technique, a lightwave from a laser source is modulated by a radio-frequency (RF) signal via a Mach-Zehnder LiNbO3 modulator, and detected by a PD under test. The measured second-order harmonic of the RF signal contains information of the frequency responses and nonlinearities of the RF source, modulator, and PD. The frequency response of the PD alone is obtained by deducting the known frequency responses and nonlinearities of the RF source and modulator. Compared with the conventional swept frequency method, the measurement frequency range can be doubled using the proposed method. Experiment results show a good agreement between the measured results and those obtained using other techniques.