X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

Being an established qualitative method for investigating presence of additional phases in single crystal materials, X-ray diffraction has been used widely to characterize their structural qualities and to improve the preparation techniques. Here quantitative X-ray diffraction analysis is described which takes into account diffraction geometry and multiplicity factors. Using double-crystal X-ray four-circle diffractometer, pole figures of cubic (002), {111} and hexagonal {10 (1) over bar0} and reciprocal space mapping were measured to investigate the structural characters of mixed phases and to obtain their diffraction geometry and multiplicity factors. The fractions of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {10 (1) over bar0} and hexagonal {10 (1) over bar1}. Without multiplicity factors, the calculated results are portions of mixed phases in only one {111} plane of cubic GaN. Diffraction geometry factor can eliminate the effects of omega and X angles on the irradiated surface areas for different scattered planes. (C) 2001 Elsevier Science B.V. All rights reserved.

Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD

Microtwins in the 3C-SiC films grown on Si(001) by APCVD were analyzed in detail using an X-ray four-circle diffractometer. The empty set scan shows that 3C-SiC films can grow on Si substrates epitaxially and the epitaxial relationship is revealed as (001)(3C-SiC)//(001)(Si), [111](3C-SiC)//[111](Si). Other diffractions emerged in the pole figures of the (111) 3C-SiC. We performed the (10 (1) over bar0) h-SiC and the reciprocal space mapping of the (002) plane of twins for the first time, finding that the diffractions at chi = 15.8 degrees result from not hexagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be 1%.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Crystallographic and magnetic properties of R3Fe29-xVxN4 (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy)

A systematic investigation of crystallographic and magnetic properties of nitride R3Fe29-xVxN4 (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed. Nitrogenation leads to a relative volume expansion of about 6%. The lattice constants and unit cell volume decrease with increasing rare-earth atomic number from Nd to Dy, reflecting the lanthanide contraction. On average, the Curie temperature increases due to the nitrogenation to about 200 K compared with its parent compound. Generally speaking, nitrogenation also results in a remarkable improvement of the saturation magnetization and anisotropy fields at 4.2 K and room temperature for R3Fe29-xVxN4 compared with their parent compounds. The transition temperature indicates the spin reorientations of R3Fe29-xVxN4 for R = Nd and Sm are at around 375 and 370 K which are higher than that of R3Fe29-xVx, for R = Nd and Sm 145 and 140 K, respectively. The magnetohistory effects of R3Fe29-xVxN4 (R = Ce, Nd, and Sm) are observed in low fields of 0.04 T. After nitrogenation the easy magnetization direction of Sm3Fe26.7V2.3 is changed from an easy-cone structure to the b-axis. As a preliminary result, a maximum remanence B-r of 0.94 T, an intrinsic coercivity mu(0)H(C) of 0.75 T, and a maximum energy product (B H)(max) of 108.5 kJ m(-3) for the nitride magnet Sm3Fe26.7V2.3N4 are achieved by ball-milling at 293 K.

半导体光电子技术

本书是“高新技术科普丛书”之一。作为信息领域的核心技术，半导体光电子技术在光通信、光盘存储、光纤传感、激光加工以及医疗、军事等方面有着重要的应用，它的发展将直接影响世界经济的进展和人类生活水平的提高。全书共11章，第1章介绍半导体光电子技术的由来和发展趋势；第2、3章重点介绍半导体光电子材料和器件工作原理；第4章到第9章介绍半导体激光器、探测器、光波导器件、光电子集成的结构和特性以及外延生长、微细加工等制造技术，同时介绍了CCD、太阳能电池等器件；最后两章介绍半导体光电子技术的应用。

纳米半导体技术

本书介绍了纳米半导体材料的定义、性质及其在未来信息技术中的地位的同时，主要介绍了纳米半导体材料制备的方法和共性关键技术，几种常用的纳米半导体材料的评价技术和应变自组装半导体量子点(线)的尺寸、密度分布、形貌、组分及结构特性的实验研究，纳米半导体材料的电子结构、光学和电学性质，基于子带跃迁的量子级联激光器的工作原理、特性和它的发展现状及其应用前景分析，最后重点介绍了纳米半导体器件及应用。本书适合于从事或对纳米半导体科学技术有兴趣的科研工作者、教师、研究生、本科生和工程技术人员阅读，有些章节可作为科普读物。

中国材料工程大典—信息功能材料工程

本书是《中国材料工程大典》中的卷目之一。 信息功能材料是信息科学技术和信息产业发展的基础和先导。21世纪将是以信息产业为核心的知识经济时代，对信息技术和信息资源的竞争将更加激烈。我国电子信息行业2004年完成产品销售收入达26500亿元，多年来已居外贸出口首位，并继续以高出工业发展速度10％的速度发展，已成为世界信息产业大国。加快由信息产业大国向信息产业强国迈进的步伐，是我们广大从事信息技术，特别是信息功能材料工作者义不容辞的责任。希望《中国材料工程大典》中《信息功能材料工程》卷的出版，将有力推动我国信息技术和信息产业的健康发展。 《信息功能材料工程》分上、中、下卷，共设20篇，约600万字。它涉及到信息的获取、传输、存储、显示和处理等主要技术用的材料与器件，是目前我国该领域比较完整的专业工具书。参加这部书编写的有中科院、高校和部分企业的专家教授近200名。参加编写的主要单位有中科院半导体研究所、中科院物理研究所、中科院微电子研究所、中科院上海精密光学机械研究所、中科院上海红外技术物理研究所、中科院长春应用化学研究所、中科院合肥固体物理所、南京大学、清华大学、西安理工大学、北京有色金属研究总院、武汉邮电科学研究院等。历时近3年完稿。由王占国、陈立泉、屠海令任主编并统稿。 本卷各篇不仅全面系统地反映了国外信息功能材料研究领域的现状、最新进展和发展趋势，而且也特别注重我国在该领域的研发和产业化方面取得的成果，力图使其具有实用性、先进性和权威性。本书适合于从事信息功能材料的科研工作者和工程技术人员查阅使用，也可供有关师生参考。

On equations for regular languages, finite automata, and sequential networks

We consider systems of equations of the form where A is the underlying alphabet, the Xi are variables, the Pi,a are boolean functions in the variables Xi, and each δi is either the empty word or the empty set. The symbols υ and denote concatenation and union of languages over A. We show that any such system has a unique solution which, moreover, is regular. These equations correspond to a type of automation, called boolean automation, which is a generalization of a nondeterministic automation. The equations are then used to determine the language accepted by a sequential network; they are obtainable directly from the network.

SpMV的自动性能优化实现技术及其应用研究

在科学计算中,稀疏矩阵向量乘(SpMV)是一个十分重要且经常被大量调用的计算内核.由于SpMV一般实现算法的浮点计算和存储访问次数比率非常低,且其存储访问模式极为不规则,其实际运行性能往往很低.通过采用寄存器分块算法和启发式分块大小选择算法,将稀疏矩阵分成小的稠密分块,重用保存在寄存器中向量x元素,可以提高该计算内核的性能.剖析和总结了OSKI软件包所采用的若干关键优化技术,并进行了实际应用性能测试.测试表明,在实际应用这些优化技术的过程中,应用程序对SpMV的调用次数要达到上百次的量级,才能抵消由于应用这些性能优化技术所带来的额外时间开销,取得性能加速效果.在Pentium4和AMD Athlon平台上,测试了10个矩阵,其平均加速比分别达到了1.69和1.48.

珠江口岸式波力试验电站

中国第一座波力试验电站——珠江口岸式波力电站于1990年2月15日试发电成功。该电站位于珠江口大万山岛的南岸，面向浩瀚南海。设计波况H1/10=1.5m，T=6.5s.计划装机容量为8kW，第一台为3kW无刷爪极式发电机组，输出110V直流电，第二台为5kW无刷单相交流同步发电机组，输出220V交流电。目前投入试发电的是3kW机组。本文将介绍该电站气室性能模型试验，空气透平与气室性能匹配设计，岩坎爆破施工，实海条件下电站气室性能试验和发电试验结果。

不同灌溉制度对玉米根系生长及水分利用效率的影响

为了探讨不同灌溉制度对玉米根系生长和水分利用效率的影响及基因型间差异,在大型活动防雨棚和棚外田间条件下,利用一组玉米遗传材料杂交种户单四号、父本803和母本天四进行了研究。结果发现玉米杂交种在根系生长、分布和水分利用效率上表现出显著的杂种优势。在充分灌溉条件下,玉米杂交种在浅层的根长密度大于亲本,但在水分亏缺条件下,玉米杂交种根长密度在整个剖面上都显著大于亲本;同一玉米基因型在不同的灌溉制度下根长密度在土壤剖面的分布也不同,拔节期不灌溉条件下玉米根系在深层土壤中的分布较充分灌溉条件下大,保证了玉米对深层土壤水分的充分吸收,而后期灌水延缓了表层根系生长的衰退,产生明显的补偿效应;拔节期干旱而抽雄期和灌浆期灌水显著提高了3种基因型玉米的水分利用效率。通过合理灌溉优化玉米根系分布特性以提高玉米吸水能力和水分利用效率,是节水栽培上的可行途径。

黄土高原水土流失治理进展及其对策

黄土高原地区水土流失类型复杂,既有自然因素和人为因素,也有水力、风力、重力产生的变化。同时气候干旱、水资源缺乏成为植物生长和生态环境改善的最大障碍。在国家实施西部大开发的进程中,良好的生态环境成为生存与发展和建设小康社会的标志。无论从西部大开发的战略角度考虑,还是从退耕还林(草)政策实施8年以后,如何解决黄土高原地区人民群众衣食住行、经济发展问题及黄河减沙的角度来看,采取有效措施,加快该区的生态建设已势在必行。根据第十一个五年规划的建议,以生态恢复学和土壤侵蚀学的基本原理为指导,分析了黄土高原地区的重要性,探讨了黄土高原生态建设与经济发展的基本现状,因地制宜地提出了发展对策。