Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 mu m at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current-voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide

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A novel photonic crystal vertical cavity surface emitting laser based on coherent coupling

We demonstrate a novel oxide confined GaAs-based photonic crystal vertical cavity surface emitting laser (PC-VCSEL) operating at a wavelength of 850 nm based on coherent coupling. A ring-shaped light-emitting aperture is added to the conventional PC-VCSEL, and coherent coupling is achieved between the central defect aperture and the ring-shaped light-emitting aperture. Measurements show that under the continuous-wave (CW) injected current of 20 mA, a high power of 2 mW is obtained, and the side mode suppression ratio (SMSR) is larger than 20 dB. The average divergence angle is 4.2 degrees at the current level of 20 mA. Compared with the results ever reported, the divergence angle is reduced.

Slow Light Effect and Multimode Lasing in a Photonic Crystal Waveguide Microlaser

The slow light effect in a photonic crystal waveguide is investigated theoretically and experimentally. Theoretical calculation indicates that there is a slow light region for the even mode, from which the resonance and lasing in a microcavity would benefit. A photonic crystal waveguide microlaser is fabricated, which is related to the group velocity of c/120.6.

Control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers

The control of the photonic crystal waveguide over the beam profile of vertical-cavity surface-emitting lasers is investigated. The symmetric slab waveguide model is adopted to analyze the control parameters, of the beam profile in the photonic-crystal vertical-cavity surface-emitting laser (PC-VCSEL). The filling factor (the ratio of the hole diameter to the lattice constant) and the etching depth control the divergence angle of the PC-VCSEL, and the low filling factor and the shallow etching depth are beneficial to achieve the low-divergence-angle beam. Two types of PC-VCSELs with different filling factors and etching depths are designed and fabricated. The experimental results show that the device with a lower filling factor and a shallower etching depth has a lower divergence angle, which agrees well with the theoretical predictions.

Single-mode holey vertical-cavity surface-emitting laser with ultra-narrow beam divergence

We demonstrated oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs) with a two-dimensional petal-shaped holey structure composed of several annular-sector-shaped holes. Four types of devices with different hole numbers were designed and fabricated. The measured results showed that the larger hole number was beneficial to purifying the lasing mode, and realizing the single-mode operation. The side mode suppression ratio (SMSR) exceeded 30 dB throughout the entire drive current. Mode selective loss mechanism was used to explain the single-mode characteristic. The single-mode devices possessed good beam profiles, and the lowest divergence angle was as narrow as 3.2 degrees (full width at half maximum), attributed to the graded index profile and the shallow etching in the top distributed Bragg reflector (DBR).

Phase-locked ring-defect photonic crystal vertical-cavity surface-emitting laser

Phase-locked oxide-confined ring-defect photonic crystal vertical-cavity surface-emitting laser is presented. The coupled-mode theory is employed to illustrate the two supermodes of the device, in-phase and out-of-phase supermode. Experimental results verify the two supermodes by the characteristics of the spectra and the far field patterns. At the lower current, only the out-of-phase supermode is excited, whereas under the higher current, the in-phase supermode also appears at the shorter wavelength range. In addition, the measured spectral separation between the two supermodes agrees well with the theoretical result.

Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates

Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3x2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%similar to 7% and 6.7%similar to 8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.

on a class of pseudorandom sequences from elliptic curves over finite fields

Following the idea of Xing et al., we investigate a general method for constructing families of pseudorandom sequences with low correlation and large linear complexity from elliptic curves over finite fields in this correspondence. With the help of the tool of exponential sums on elliptic curves, we study their periods, linear complexities, linear complexity profiles, distributions of r-patterns, periodic correlation, partial period distributions, and aperiodic correlation in detail. The results show that they have nice randomness.