具有Pb衬的Tb薄靶的制备

采用滚压法制备Ｔｂ靶，采用滚压法或真空蒸发法制得Ｐｂ膜，两者通过滚压或真空蒸发法结合制得了带Ｐｂ村的Ｔｂ薄靶。

50MeV/u~(20)Na+~(208)Pb→p+~(19)Ne+~(208)Pb反应的探测效率模拟

用半经典模型考虑20Ｎａ＋２０８Ｐｂ→ｐ＋１９Ｎｅ＋２０８Ｐｂ的Ｃｏｕｌｏｍｂ解离过程。用ＭｏｎｔｅＣａｒｌｏ方法计算前角放置的望远镜阵列对Ｃｏｕｌｏｍｂ解离碎片的探测效率。讨论了天体环境下ｐ＋１９Ｎｅ→２０Ｎａ俘获反应道的低能级共振截面测量的可行性。

Sputtering induced by highly charged Pb-208(q+) bombardment on Al surface

Highly charged ions (HCls) carrying high Coulomb potential energy (E-p) could cause great changes in the physical and chemical properties of material surface when they bombard on the solid surface. In our work, the secondary ion yield dependence on highly charged Pbq+ (q = 4-36) bombardment on Al surface has been investigated. Aluminum films (99.99%) covered with a natural oxide film was chosen as our target and the kinetic energy (E-k) was varied between 80 keV and 400 keV. The yield with different incident angles could be described well by the equation developed by us. The equation consists of two parts due to the kinetic sputtering and potential sputtering. The physical interpretations of the coefficients in the said equation are discussed. Also the results on the kinetic sputtering produced by the nuclear energy loss on target Surface are presented.

Surface erosion of GaN bombarded by highly charged Pb-208(q+)-Ions

Surface change of gallium nitride specimens after bombardment by highly charged Pbq+-ions (q = 25, 35) at room temperature is studied by means of atomic force microscopy. The experimental results reveal that the surface of GaN specimens is significantly etched and erased. An unambiguous step-up is observed. The erosion depth not only strongly depends on the charge state of ions, but also is related to the incident angle of Pbq+-ions and the ion dose. The erosion depth of the specimens in 60 incidence (tilted incidence) is significantly deeper than that of the normal incidence. The erosion behaviour of specimens has little dependence on the kinetic energy of ion (E-k = 360, 700 keV). On the other hand, surface roughness of the irradiated area is obviously decreased due to erosion compared with the un-irradiated area. A fiat terrace is formed.

Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation

Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials.

Effects of annealing on the photoluminescence of He ion implanted sapphire after 230-MeV Pb ion irradiation

Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.

Pb isotope shifts in the relativistic mean field theory

The ground state properties of the Pb isotopic are studied by using the axially deformed relativistic mean field (RMF) calculation with the parameter set TM1. The pairing correlation is treated by the BCS method and the isospin dependent pairing force is used. The 'blocking' method is used to deal with unpaired nucleons. The theoretical results show that the relativistic mean field theory with non-linear self-interactions of mesons provides a good description of the binding energy and neutron separation energy. The present paper focus on the physical mechanism of the Pb isotope shifts.

Electron emission induced by the interaction of highly charged ions Pb-207(q+) (24 <= q <= 36) with solid surface of Si(110)

The electron emission induced by highly charged ions Pb-207(q+) (24 <= q <= 36) interacting with Si(110) surface is reported. The result shows that the electron emission yield Y has a strong dependence on the projectile charge state q, incidence angle psi and impact energy E. In fitting the experimental data we found a nearly 1/tan psi dependence of Y. Theoretical analysis shows that these processes are closely related to the process of potential electron emission based on the classical over-the-barrier model.

0.4-1.2A GeV能区重离子碰撞中的直接流系统性研究

直接流是研究重离子碰撞动力学演变和压缩形成的高密核物质性质很好的探针，本论文系统地研究了0.4、0.8和1.16A GeV的Ni+Ni和Pb+Pb碰撞中的直接流。实验是在德国重离子研究中心(GSI)的FOPI探测装置上完成的。论文中，简单总结了中高能区重离子碰撞的现状和描述集体流的主要理论模型，介绍了FOPI探测系统，给出了详细的实验数据分析过程，对所得到的物理结果进行了讨论。本论文工作的重点如下：基于FOPI系统的实验数据，发展了一套质量相关(Z=1离子)的直接流的提取方法。提取了各碰撞系统出射P、D和T粒子在不同碰撞中心度下的微分直接流和积分直接流。研究了P、D和T的直接流对碰撞中心度、系统尺寸和碰撞能量的依赖性，以及对核物质状态方程的敏感性。结果表明：直接流敏感地依赖于碰撞中心度，近中心碰撞具有更强直接流信号；对于轻重两种系统，用常用的AP1/3+AT1/3系数对积分直接流进行了标度，观察到一定的标度性，但不能完全标度；通过研究直接流对碰撞能量的依赖性发现，在0.4－1.2A GeV能区内，随能量升高，直接流在已经达到了饱和，并开始下降，并且P、D和T的变化趋势相同。实验数据与输运模型IQMD计算比较发现，直接流的变化趋势和最大密度变化趋势相同，说明直接流是核物质压缩程度的一个良好探针。计算得到的P、D和T微分和积分的V1值表明，与质量相关的直接流，无论是微分值还是积分值都敏感依赖于模型中EoS参数。比较发现，不同碰撞能量下，重的Pb+Pb系统的数据和软的EoS符合很好，说明核物质不可压缩系数在210 MeV附近，这与文献中的结果相吻合，说明与质量相关的直接流是EoS的敏感探针。对于轻Ni＋Ni系统，目前的IQMD还不能重现数据，但其趋向于硬的EoS，需要发展描述碰撞过程更为精细的理论模型。数据整体趋势表明，随者系统变重，中子比例的增加，EoS变软，难以给出同一组IQMD参数来同时解释全部的实验数据。对于所研究的碰撞系统，比较中心快度区斜率行为时发现，P、D和T的直接流与出射粒子质量数呈线性关系，并且出射粒子的积分直接流可以很好的用常数(A+1)/2进行标度。如果出射粒子的直接流用IQMD计算的核阻止进行归一，归一后的直接流与碰撞能量成正比。这证明核阻止与直接流有线性关联，反映了核阻止对于碰撞中核物质达到的最高密度起决定性的作用。论文工作的另一部分是完成了FOPI探测装置中飞行时间探测器的升级工作。研制了新型的玻璃MMRPC，完成了性能的批量测试，并研究了该探测器的高计数率行为。测量结果显示，在实验计数率(0.1 kHz/cm2)条件下，MMRPC时间分辨达到75 ps，探测效率达到98％。当计数率达到3－5 kHz/cm2时，时间分辨和探测效率降至约110 ps和75％。高计数率探测效率变差的幅度可以用DC模型进行解释，然而时间分辨的变化幅度用DC模型难以解释