INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 to 3 ML. The temperature dependence of InAs exciton emission and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML. The fast redshift of PL energy and an anomalous decrease of linewidth with increasing temperature were observed and attributed to the efficient relaxation process of carriers in multilayer samples, resulting from the spread and penetration of the carrier wave functions in coupled InAs quantum dots. The measured thermal activation energies of different samples demonstrated that the InAs wetting layer may act as a barrier for the thermionic emission of carriers in high-quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to escape thermally from the localized states.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As In0.53Ga0.47As, and (In0.52Al0.48As)(2)/(In(0.53)Ga(0.47)AS)(2)-short-period-lattice matrixes on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x4 direction in the 2x4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers.

Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots

The influence of interdot electronic coupling on photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) has been systematically investigated combining with the measurement of transmission electron microscopy. The experimentally observed fast red-shift of PL energy and an anomalous reduction of the linewidth with increasing temperature indicate that the QD ensemble can be regarded as a coupled system. The study of multilayer vertically coupled QD structures shows that a red-shift of PL peak energy and a reduction of PL linewidth are expected as the number of QD layers is increased. On the other hand, two layer QDs with different sizes have been grown according to the mechanism of a vertically correlated arrangement. However, only one PL peak related to the large QD ensemble has been observed due to the strong coupling in InAs pairs. A new possible mechanism to reduce the PL linewidth of QD ensemble is also discussed.

Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)

The structural evolution of the ordered N-N' dibutyl-substituted quinacridone (QA4C) multilayers (3 MLs) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (LEED) during organic molecular beam epitaxy (MBE). Experimental results of LEED patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. Multilayer growth can be achieved at the substrate temperatures below 300 K, while at the higher temperatures we can only get one ordered monolayer of QA4C. Two kinds of structures, the commensurate and incommensurate one, often coexist in the QA4C multilayer. With a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the QA4C bulk crystal, prevails with the layer of QA4C increasing to 3 MLs. The two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer.

基于分布式内存数据库的HIRFL-CSR真空监控系统

This paper introduced a real-time vacuum monitor system based on multilayer Web architecture for HIRFL-CSR(Heavy Ion Research Facility of Lanzhou & Cooler Storage Ring) project in Lanzhou.It combined with COM/DCOM to develop the application layer,and developed the web layer with ActiveX and Ajax technology.It provided a facility and efficiency method for real-time control.The application shows that this system runs stably and accurately.中文文摘：简要介绍了国家"九五"重大科学工程——兰州重离子加速器冷却储存环(HIRFL-CSR)真空监控系统的总体结构,分析了在Web构架下,基于分布式内存数据库的多层真空监控系统的实现方法。采用分布式内存数据库,解决了基于Web构架的分布式实时应用环境下对系统和网络资源的消耗问题。在软件控制方面采用了统一调度,既简化了软件实现过程,又提高了系统的安全性、高效性和易维护性。该系统已成功运行。

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.

Melting of Au and Al in nanometer Fe/Au and Fe/Al multilayers under swift heavy ions: A thermal spike study

Knowing that Fe is sensitive to swift heavy ion irradiations whereas Au and Al are not, the behavior of nanometric metallic multilayer systems, like [Fe(3 nm)/Au(x)](y) and [Fe(3 nm)/Al(x)](y) with x ranging between 1 and 10 mn, were studied within the inelastic thermal spike model. In addition to the usual cylindrical geometry of energy dissipation perpendicular to the ion projectile direction, the heat transport along the ion path was implemented in the electronic and atomic sub-systems. The simulations were performed using three different values of linear energy transfer corresponding to 3 MeV/u of Pb-208, Xe-132 and Kr-84 ions. For the Fe/Au system, evidence of appearance of a molten phase was found in the entire Au layer, provided the Au thickness is less than 7 nm and 3 nm for Pb and Xe ions, respectively. For the Fe/Al(x) system irradiated with Pb ions, the Al layers with a thickness less than 4 nm melt along the entire ion track. Surprisingly, the Fe layer does not melt if the Al thickness is larger than 2 nm, although the deposited energy surpasses the electronic stopping power threshold of track formation in Fe. For Kr ions melting does not occur in any of the multilayer systems.

Photo- and Thermo-Chromic Study of the Ethylenediamine Trimolybdate

The ethylenediamine trimolybdate (ENTMo) can show unusually photochromic and thermochromic properties and there exists in the difference of chromic mechanisms, which has been proved in our previous work [I]. In this paper, X-ray powder diffraction (XRD), Fourier transform infrared (FTIR) and laser Raman spectroscopy (LRS) of the colored samples are characterized and analyzed in detail. The crystal structure, the inorganic skeleton and the microenvironment of center ions of the colored samples do not substantively change except distortion. The color difference of the photochromic and the thermochromic samples is discussed and that the difference of reduction sites result in their different chromic mechanisms is suggested.

Sensing H2O2 with layer-by-layer assembled Fe3O4-PDDA nanocomposite film

It was found that Fe3O4 nanoparticles (Fe3O4 NPs) possess intrinsic enzyme mimetic activity similar to that found in natural peroxidase. Here, we applied Fe3O4 NPs to the construction of efficient electrochemical sensor to detect the concentration of hydrogen peroxide. The sensor was fabricated with layer-by-layer assembly of Fe3O4 NPs and poly(diallyldimethylammonium chloride) (PDDA) through the electrostatic interaction, and the multilayer film was characterized with UV-vis absorption spectra, atomic force microscopy, and cyclic voltammetry.

Layer-by-layer assembly of carbon nanotubes and Prussian blue nanoparticles: A potential tool for biosensing devices

A promising method for assembling carbon nanotubes (CNTs) and poly(diallyldimethylammonium chloride) protected Prussian blue nanoparticles (P-PB) to form three-dimensional (3D) nanostructured films is proposed. The electrostatic interaction, combined with layer-by-layer self-assembly (LBL), between negatively charged CNTs and positively charged P-PB is strong enough to drive the formation of the 3D nanostructured films. Thus, prepared multilayer films were characterized by ultraviolet-visible-near-infrared spectroscopy (UV-vis-NIR), scanning electron microscopy (SEM) and cyclic voltammetry (CV).

Electroluminescence of hole block material caused by electron accumulation and hole penetration

In this study, we investigated the electroluminescence (EL) mechanisms and processes of hole block material in the multilayer devices with Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1,10-phenanthroline) doped CBP (4,4'-N,N'-dicarbazolebiphenyl) as the light-emitting layer (EML). First, the hole block ability of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was experimentally confirmed by comparing the EL spectra. With increasing hole injection, BCP emission emerges and increases gradually due to the increasing hole penetration from EML into the hole block layer (HBL).