Occupation modulation of higher subbands in a three-barrier tunnelling structure with a magnetic field

We verify that the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. This is clearly determined by the relative intensity ratio of the interband photoluminescence spectra for the E-2 - HH1 and E-1 - HH1 transitions. The observed phenomenon may provide an effective method to control the intersubband scattering rate, which is a key factor of the so-called quantum cascade lasers. This is helpful for the population inversion between both the subbands in quantum wells.

Bloch oscillation under a bichromatic laser: Dynamical delocalization and localization, persistent terahertz emission, and harmonics generation

A novel AC driving configuration is proposed for biased semiconductor superlattices, in which the THz driving is provided by an intense bichromatic cw laser in the visible light range. The frequency difference between two components of the laser is resonant with the Bloch oscillation. Thus, multi-photon processes mediated by the conduction (valence) band states lead to dynamical delocalization and localization of the valence (conduction) electrons, and to the formation and collapse of quasi-minibands. Thus, driven Bloch oscillators are predicted to generate persistent THz emission and harmonics of the dipole field, which are tolerant of the exciton and the relaxation effects.

Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature

The behavior of room temperature self-sustained current oscillations resulting from sequential resonance tunneling in a doped weakly-coupled GaAs/AlAs superlattice (SL) is investigated under hydrostatic pressure. From atmosphere pressure to 6.5 kbar, oscillations exist in the whole plateau of the I-V curve and oscillating characteristics are affected by the pressure. When hydrostatic pressure is higher than 6.5 kbar, the current oscillations are completely suppressed although a current plateau still can be seen in the I-V curve. The plateau disappears when the pressure is close to 13.5 kbar. As the main effect of hydrostatic pressure is to lower the X point valley with respect to Gamma point valley, the disappearance of oscillation and the plateau shrinkage before Gamma - X resonance takes place are attributed to the increases of thermoionic emission and nonresonant tunneling components determined by the lowest Gamma - X barrier height in GaAs/AlAs SL structure.

High-output very small aperture laser and its near-field distribution properties - art. no. 60200L

A Very-Small-Aperture Laser with a 250 X 500 nm(2) aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15 MW/mu m(2). The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.

Design of surface emitting distributed feedback quantum cascade laser with single-lobe far-field pattern and high outcoupling efficiency

A 7.8-mu m surface emitting second-order distributed feedback quantum cascade laser (DFB QCL) structure with metallized surface grating is studied. The modal property of this structure is described by utilizing coupled-mode theory where the coupling coefficients are derived from exact Floquet-Bloch solutions of infinite periodic structure. Based on this theory, the influence of waveguide structure and grating topography as well as device length on the laser performance is numerically investigated. The optimized surface emitting second-order DFB QCL structure design exhibits a high surface outcoupling efficiency of 22% and a low threshold gain of 10 cm(-1). Using a pi phase-shift in the centre of the grating, a high-quality single-lobe far-field radiation pattern is obtained.

Far-field and beam characteristics of vertical-cavity surface-emitting lasers

We have determined the far-field patterns and beam parameters of vertical-cavity surface-emitting lasers (VCSELs) with different structures. The results show that the window diameter and the active-layer aperture of VCSELs strongly influence laser far-field distributions and beam characteristics; for VCSELs with small window omega=5 mu m, only one dominant lobe has been observed in the far-field profiles, even though injected current was increased up to 2 Ith; and the smaller the ratio of the window diameter to the active-layer aperture, the larger is the far-field divergence. The laser structure dependence of the K factor has also been studied. (C) 1996 American Institute of Physics.

Theoretical study on spherical proton emission

The proton radioactivity half-lives of spherical proton emitters are investigated within a generalized liquid drop model (GLDM), including the proximity effects between nuclei in a neck and the mass and charge asymmetry. The penetrability is calculated in the WKB approximation and the assault frequency is estimated by the quantum mechanism method considering the structure of the parent nucleus. The spectroscopic factor is taken into account in half-life calculation, which is obtained by employing the relativistic mean field (RMF) theory. The half-lives within the GLDM are compared with the experimental data and other theoretical values. The results show that the GLDM works quite well for spherical proton emitters when the assault frequency is estimated by the quantum mechanical method and the spectroscopic factor is considered.

Investigation on internal electric field distribution of organic light-emitting diodes (OLEDs) with Eu2O3 buffer layer

We have found that organic light-emitting diode (OLED) performance was highly improved by using europium oxide (Eu2O3) as a buffer layer on indium tin oxide (ITO) in OLEDs based on tris-(8-hydroxyquinoline) aluminium (Alq(3)), which showed low turn-on voltage, high luminance, and high electroluminescent (EL) efficiency. The thickness of Eu2O3 generally was 0.5-1.5 nm. We investigated the effects of Eu2O3 on internal electric field distributions in the device through the analysis of current-voltage characteristics, and found that the introduction of the buffer layer balanced the internal electric field distributions in hole transport layer (HTL) and electron transport layer (ETL), which should fully explain the role of the buffer layer in improving device performance. Our investigation demonstrates that the hole injection is Fowler-Nordheim (FN) tunnelling and the electron injection is Richardson-Schottky (RS) thermionic emission, which are very significant in understanding the operational mechanism and improving the performance, of OLEDs.

Dependence of crystal field splitting of 5d levels on hosts in the halide crystals

The crystal field splitting of 5d level of EU2+ and Ce3+ in halide crystals has been studied. Our results indicate that the 10Dq splitting can be directly related to the homopolar part of average energy gap, the coordination number of central (doped) ion, the charge of neighboring anions and bond ionicity between central ion to nearest anions. A relation between the 10Dq splitting and the above mentioned factors is presented. Our calculated results are in reasonable agreement with diverse experiments.

EFFECT OF CRYSTAL-FIELD AND BONDING PROPERTIES ON SPECTRAL STRUCTURE OF EU-2+

Five Eu~(2+)-doped simple fluorides and six Eu~(2+)-doped complex fluorides are synthesized by solid reactions. The strength of the crystal-field at the sites of Eu~(2+) ion, and the degroe of covalenco of Eu—F bond in these hosts are discussed. The f-f transition emission of Eu~(2+) ion is observed in the hosts which has lower coordination number and strong crystal-field. The f-f transition emission of Eu~(2+) ion is observed for the first time in the simple fluoride AlF_3.

CRITERION ON F-]F TRANSITION EMISSION OF EUROPIUM(II) AND ITS APPLICATION IN COMPLEX FLUORIDES

The criterion on 4f~7(~6P_J)→4f~7 (~8S_(7/2))(i. e. f→f)transition emission of Eu~(2+) ions was established based on chemical band properties and crystal field effects. By means of the criterion, we have predioted, designed and synthesized 40 Eu~(2+)-doped complex fluorides. The sharp emissions of f→f transition of Eu~(2+) ions were observed in these doped compounds. The condition for applying this criterion is briefly discussed.