信号采集与数据处理电路的研究

随着原子核科学技术的发展，无论是对原子核内部特征和规律的研究，或者是对原子核科学技术的应用，都需要对核辐射和原子核所携带的信息进行测量和分析研究。在核电子学测量系统中，核辐射探测器输出信号在经过各种信号处理电路后，通常都要变换成数字信号，再经过数据收集和处理，给出实验的最终结果，因此实验工作的任何进展都要求有相应的数据获取和处理系统的支持。根据实验的实际需求，我们以采集、处理探测器输出的信号为题，开展了一些研究工作，我们先后开展的研究工作包括以下儿个方面：1．激光功率计的变换与显示电路的研制2．基于PCI总线、嵌入8051单片机的计数卡的研制3．数据处理分析软件的设计这三部分的设计工作我们将在论文的第二、第三、第四章分别进行阐述。激光功率计的变换与显示电路把由激光功率计输出的模拟电压量变为数字脉冲输出，并且把该输出脉冲的频率实时定性显示出来。本电路测量精度高，线性好，工作稳定。我们研制开发的计数卡是一种很实用的计数卡，它是一种基于PCI总线，嵌入单片机的高速计数器，最大计数范围为109-1，最高的计数频率为20MHz。该计数卡计数范围宽，计数频率高，具有定时计数、重复计数等功能，可以取代常规的定标器，具有广泛的应用前景。数据处理分析软件包括下位机软件、上位机软件及通讯协议三部分，实现数据的采集与记录，并将读取的数据以Excel电子表格的形式存储，以备查询。下位机的软件采用KeilC编写，上位机软件采用Delphi编写。目前激光功率计的变换与显示电路和计数卡及相应的数据处理软件都设计、调试完成，已经投入使用，获得满意结果，受到好评。

Spatial-temporal characteristics of siping urban expansion based on remote sensing and GIS

Based on the RS and GIS methods, Siping city is selected as a study case with four remote sensing images in 25 years. Indices of urban morphology such as fractal dimension and compactness are employed to research the characteristics of urban expansion. Through digital processing and interpreting of the images, the process and characteristics of urban expansion are analysed using urban area change, fractal dimension and compactness. The results showed that there are three terms in this period. It expended fastest in the period of 1979~1991, and in the period of 1992~2001, the emphases on urban redevelopment made it expended slower. And this is in agreement with the Siping Statistical Yearbook. This indicates that the united of metrics of urban morphology and statistical data can be used to satisfactorily describe the process and characteristics of urban expansion. © 2008 IEEE.

Phthalocyanato tin(IV) dichloride: An air-stable, high-performance, n-type organic semiconductor with a high field-effect electron mobility

Phthalocyanato tin(IV) dichloride, an axially dichloriniated MPc, is an air-stable high performance n-type organic semiconductor with a field-effect electron mobility of up to 0.30 cm(2) V-1 s(-1). This high mobility together with good device stability and commercial availability makes it a most suitable n-type material for future organic thin-film transistor applications.

Potassium-Lead-Switched G-Quadruplexes: A New Class of DNA Logic Gates

A cation-driven allosteric G-quadruplex DNAzyme (PW17) was utilized to devise a conceptually new class of DNA logic gate based on cation-tuned ligand binding and release. K+ favors the binding of hemin to parallel-stranded PW17, thereby promoting the DNAzyme activity, whereas Pb2+ induces PW17 to undergo a parallel-to-antiparallel conformation transition and thus drives hemin to release from the G-quadruplex, deactivating the DNAzyme. Such a K+-Pb2+ switched G-quadruplex, in fact, functions as a two-input INHIBIT logic gate. With the introduction of another input EDTA, this G-quadruplex can be further utilized to construct a reversibly operated IMPLICATION gate.

Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate

We have observed, respectively, a negative differential resistance (NDR) and switching conduction in current-voltage (I-V) characteristics of organic diodes based on copper phthalocyanine (CuPc) film sandwiched between indium-tin-oxide (ITO) and aluminum (Al) by controlling the evaporation rate. The NDR effect is repeatable which can be well, controlled by sweep rate and start voltage, and the switching exhibits write-once-read-many-times (WORM) memory characteristics. The traps in the organic layer and interfacial dipole have been used to explain the NDR effect and switching conduction. This opens up potential applications for CuPc organic semiconductor in low power memory and logic circuits.

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.