Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors

High-quality InAsxSb1-x (0 < x <= 0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2x10(4) cm(2) V-1 s(-1) and cutoff wavelengths longer than 10 mu m at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8 mu m are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13 mu m with a maximum responsivity of 0.26 V/W is obtained at RT. Hence, the InAsxSb1-x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors. (c) 2006 American Institute of Physics.

A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD

1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well (MD-MQW) DFB lasers have been fabricated successfully by low pressure metal organic chemical vapour deposition (LP-MOCVD) technology. The experimental results indicate that n-type MD-MQWs can effectively reduce the threshold Current compared with conventional multiple quantum well DFB lasers. Theoretical analysis indicates that such an effect is due to the much smaller absorption loss and lower Auger recombination, compared with that in an undoped MQW structure. Moreover, the introduction of n-type dopant of suitable levels of concentration in the barrier layers enhances the dynamic characteristics of DFB lasers, due to a coupling between the adjacent quantum well layers and tunnelling-assisted injection, which can reduce the relatively long capture time and increase the effective differential gain 1/X dG/dn .

The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures

Al0.38Ga0.62N/AIN/GaN HEMT structures have been grown by metal-organic chemical vapor deposition (MOCVD) on 2-inch sapphire substrates. Samples with AIN growth time of 0s (without AIN interlayer), 12, 15, 18 and 24s are characterized and compared. The electrical properties of two-dimensional electron gas (2DEG) are improved by introducing AIN interlayers. The AIN growth time in the range of 12-18s, corresponding to the AIN thickness of 1-1.5 nm, is appropriate for the design of Al0.38Ga0.62N/AIN/GaN HEMT structures. The lowest sheet resistance of 277 Omega sq(-1) and highest room temperature 2DEG mobility of 1460 cm(2)V(-1) s(-1) are obtained on structure with AIN growth time of 12s. The structure with AIN growth time of 15s exhibits the highest 2DEG concentration of 1.59 x 10(13) cm(-2) and the smallest RMS surface roughness of 0.2 nm. (c) 2006 Elsevier B.V. All rights reserved.

纳米半导体技术

本书介绍了纳米半导体材料的定义、性质及其在未来信息技术中的地位的同时，主要介绍了纳米半导体材料制备的方法和共性关键技术，几种常用的纳米半导体材料的评价技术和应变自组装半导体量子点(线)的尺寸、密度分布、形貌、组分及结构特性的实验研究，纳米半导体材料的电子结构、光学和电学性质，基于子带跃迁的量子级联激光器的工作原理、特性和它的发展现状及其应用前景分析，最后重点介绍了纳米半导体器件及应用。本书适合于从事或对纳米半导体科学技术有兴趣的科研工作者、教师、研究生、本科生和工程技术人员阅读，有些章节可作为科普读物。

An ambient proof and wide tuning range LC VCO with automatic amplitude control for tuner applications

This paper represents a LC VCO with AAC (Auto Amplitude Control), in which PMOS FETs are used as active components, and the varactors are directly connected to ground to widen Kvco linear range. The AAC circuitry adds little noise to the VCO and provides it with robust performance over a wide temperature and carrier frequency range. The VCO is fabricated in 50-GHz 0.35-mu m SiGe BiCMOS process. The measurement results show that it has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole circuit draws 6.6-mA current from 5.0-V supply.

Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 mu m with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 degrees C with a short duration of 10 s is suggested for optimizing the annealing effect. (c) 2005 Elsevier B.V. All rights reserved.

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.

神二2号机组保温状况的测试、分析及改进建议

介绍了神二2号机组保温状况，进行了热力测试，找出了机组在保温方面存在的问题，分析了保温不良对机组的影响，并提出了改进建议

全固态电流型氧传感器及Pt-Fe复合催化剂的研究

控制电位电解型即电流型气体传感器由于具有检测气体种类多、浓度范围宽、体积小、价格低、测量精度高、可用于现场直接检测等优点，在环境监测与安全生产等领域中得到了广泛应用。本文论述了纳米级铂、碳纳米管负载铂及铂铁催化剂的合成方法，并对其进行了物理化学表征和电化学研究，主要结果如下： 采用柠檬酸钠还原的方法，合成了纳米级铂催化剂。TEM和XRD测试表明，该球形多晶铂的粒径为2－5nm。用此种铂催化剂制备了离子交换膜电极复合体，并组装了全固态电流型氧传感器；在对低浓度氧气进行测试时，具有高的灵敏度、较短的响应时间、较低的底电流和噪声，且响应信号与氧气的浓度呈良好的线性关系。 1．利用空气氧化和硝酸相结合对多壁碳纳米管进行了纯化，并利用1:1的H2SO4-HNO3混酸使其表面羧基化，TEM和CV测试表明多壁碳纳米管达到了纯化和表面官能团化的目的。 2．利用喷雾冷却法制备了多壁碳纳米管负载的铂及铂铁合金纳米级催化剂复合体，并利用TEM、EDS、XRD、ICP等进行了表征；在循环伏安扫描中，铂铁合金催化剂呈现较高的比表面积。将多壁碳纳米管负载的铂及铂铁合金纳米级催化剂应用于C1有机小分子的电化学氧化研究中发现，铂铁合金催化剂具有较高的催化活性.

铬系催化剂聚合1,3-双烯烃的研究

铬系催化剂是合成1,2-聚丁二烯和3,4-聚异戊二烯的一种主要催化剂体系，1,2-聚丁二烯和3,4-聚异戊二烯是制造高性能轮胎的重要原料。本论文研究了以含氮化合物和含磷化合物为配体的铬催化剂合成1,2-聚丁二烯和3,4-聚异戊二烯的反应规律。 1. 以邻菲咯啉为配体的铬催化剂在己烷中50℃下可获得1,2-结构、顺-1,4-结构和反-1,4-结构单元含量分别约为50%、30%和20%，分子量呈双峰分布的聚丁二烯。改变聚合温度，可有效控制聚合物的1,2-结构含量和分子量及分布。催化剂通过预陈化方式，可有效抑制低聚物的生成。 2. 以亚磷酸二烷基酯为配体的铬催化剂是合成1,2-聚丁二烯的高效催化剂，所得聚合物具有高的1,2-结构含量（> 78%）。改变烷基铝和亚磷酸二烷基酯的结构，可以得到高熔点或低熔点间同1,2-聚丁二烯和无规1,2-聚丁二烯。催化剂以现配方式的活性最高。 3. 以磷酸三苯酯为配体的铬催化剂可获得间同1,2-聚丁二烯，而聚合物中含有低聚物。催化剂以现配方式的活性最高。聚合物的熔点，低聚物的含量与磷酸三苯酯的结构有一定的关系。 4. 以邻菲咯啉为配体的铬催化剂在50℃下聚合异戊二烯，具有高的催化活性，可获得3,4-结构含量约67%的高分子量无规3,4-聚异戊二烯。催化剂的组成对聚合物的微观结构无明显影响。改变聚合温度，可有效控制聚合物的3,4-结构含量和分子量及分布。

2,3'-联吡啶还原合成毒藜碱、安那他品和异毒藜碱

本论文从2，3'-联吡啶出发，利用两个吡啶环上氮的反应活性差异，选择性合成了单烷基盐1-甲基-2，3，-联吡啶盐、1-甲基-1，一氧-2，3，-联吡啶盐和1'-甲基／节基2，3气联吡啶盐，还原单烷基盐合成了天然生物碱毒黎碱、安那他品和异毒黎碱及其衍生物：对异毒黎碱的合成由还原N，-节基盐后脱节基简化为一步实现还原和脱节基直接得到异毒黎碱。通过用（R）-BINOL和（S）-BINOL对N，-节基异毒黎碱拆分得到了旋光纯的N，-节基异毒黎碱和异毒黎碱，-N，-节基异毒黎碱的旋光度［a］D20：-61．50（c＝2．0，乙醇），卜异毒黎碱的旋光度fa］D20：-14．4"（c-1．0，乙醇）；将C关异毒黎碱用（RMTPA和（s）MT队衍生为Mosher酞胺，应用Mosllel方法确定了C）异毒黎碱手性中心的绝对构型为R型，即（R）-C）异毒黎碱，同时发现，由（R）一MTPA合成的Mosller酞胺中顺式旋转异构体占优。而通常在环胺的Mosller酞胺中，是反式旋转异构体占优。这一例外被MollteCarlo模型模拟计算结果解释：稀溶液中C卜异毒黎碱的Moshel－酞胺，顺式构型能量上比反式更有利。不对称合成天然生物碱更具有挑战性。对异毒黎碱还原合成中的呱l淀烯类中间体，用BINAP-灿催化体系进行了催化不对称还原的合成研究，氢化N'-节基-1，，4，，5，，6，-四氢一2，3，一联吡陡时得到了最高为21．5％的对映体选择性，而对N'-节基一1，，2'，5'，6，-四氢-2，3'一联吡陡的氢化则只得到了不超过10．0％的对映体选择性。

1,5-二氮杂戊二烯合成非对称联吡啶研究

联吡陡及其衍生物不仅用于化工和药物合成的中间体，而且具有独特的赘合作用，可被用于金属催化剂配体等方面，因此它的合成方法研究引起了人们广泛的兴趣。但是非对称联吡陡的合成日前方法仍很少。本文利用己经被成功使用于其他含氮杂环的二碳合成子-1，5-二氮杂戊二烯（vinamidiniulnsalts），合成了单取代的2，2'-，2，3'-，2，4，一二类联吡陡。在合成1，5-二氮杂戊二烯的过程中：确立了一条以四甲氧基丙烷为原料一步合成l，5一二氮杂戊二烯的简捷，经济，易工业化的合成路线，并成功进行了公斤级的放大实验；优化了1，5-二氮杂戊二烯的亲电取代反应，高收率的获得溟代，硝化的1，5-二氮杂戊二烯；优化了从取代乙酸合成p取代1，5-二氮杂戊二烯的合成方法，高收率的获得九种p芳基取代1，5-二氮杂戊二烯。本文研究了非对称联吡睫合成的一种新方法：在碱性条件下，取代的1，5-二氮杂戊二烯盐各种乙酞基吡陡亲核加成的产物，不经分离直接和氨进行［3＋2＋1〕的成环反应，可以高收率的合成出单取代的2，2气，2，3气，2，4气三类联吡陡。这一方法己经被成功的应用于芳基取代，卤素取代，硝基取代以及无取代基的1，5-二氮杂戊二烯与三种乙酞基吡陡的反应。这种成环反应的收率与1，5-二氮杂戊二烯俘位的吸电子特征相关。因此，针对不同取代基的1，5-二氮杂戊二烯在溶剂，碱的选择以及反应温度的控制等方面进行了优化。从而成功合成出近30种单取代的非对称联吡陡。一这种合成方法，原料价格低廉，实验操作简单，而且收率高，非常适合大量合成的要求。