188 resultados para Neutron reflectivity


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The NiOx thin films were deposited by reactive dc-magnetron sputtering from a nickel metal target in Ar + O-2 with the relative O-2 content 5%. The as-deposited NiOx, thin films could represent a two-component system comprising crystalline NiO particles dispersed in an amorphous Ni2O3. Decomposition temperature of the as-deposited NiO, thin films was at about 263 degrees C. After annealed at 400 degrees C for 30 min in air, the surface morphology of the films became very rough due to the decomposition of the Ni2O3, leading to the changes of the optical properties of the NiO, thin films. The reflectivity of the films annealed at 400 degrees C was lower than that of the as-deposited one and the optical contrast was 52% at 405 nm. (c) 2006 Elsevier B.V. All rights reserved.

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SbOx thin films are deposited by reactive dc-magnetron sputtering from all antimony metal target in Ar+O-2 with the relative O-2 content 7%. It is found that the as-deposited films call represent a two-component system comprising amorphous Sb and amorphous Sb2O3. The crystallization of Sb is responsible for the changes of optical properties of the films. The results of the static, test show that the SbOx thin films have good writing sensitivity for blue laser beams and the recording marks are very clear and circular. High reflectivity contrast of about 41% is obtained at a writing power 6 mW and writing pulse width 300 ns. In addition, the films show a good stability after reading 10000 times.

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Thin films of four nickel(II) and copper(II) hydrazone complexes, which will hopefully be used as recording layers for the next-generation of high-density recordable disks, were prepared by using the spin-coating method. Absorption spectra of the thin films on K9 optical glass substrates in the 300-700 nm wavelength region were measured. Optical constants (complex refractive indices N) and thickness d of the thin films prepared on single-crystal silicon substrates in the 275-675 nm wavelength region were investigated on a rotating analyzer-polarizer scanning ellipsometer by fitting the measured ellipsometric angles (Psi(lambda) and Delta(lambda)) with a 3-layer model (Si/dye film/air). The dielectric functions epsilon and absorption coefficients alpha as a function of the wavelength were then calculated. Additionally, a design to achieve high reflectivity and optimum dye film thickness with an appropriate reflective layer was performed with the Film Wizard software using a multilayered model (PC substrate/reflective layer/dye film/air) at 405 nm wavelength.

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Si:SbOx films have been deposited by reactive dc-magnetron sputtering from a Sb target with Si chips attached in Ar + O-2 with the relative O-2 content 7%. The as-deposited films contained Sb metal, Sb2O3, SiO, Si2O3 and SiO2. The crystallization of Sb was responsible for the changes of optical properties of the films. The results of the blue laser recording test showed that the films had good writing sensitivity for blue laser beam (406.7 nm), and the recording marks were still clear even if the films were deposited in air 60 days, which demonstrated that doping silicon in SbOx films can improve the stability of SbOx films. High reflectivity contrast of about 36% was obtained at a writing power 6 mW and writing pulse width 300 ns. (c) 2007 Elsevier B.V. All rights reserved.

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利用直流磁控反应溅射技术制备了氧气和氩气的分压比为5:100的NiOx薄膜。利用X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)和光谱仪研究了热处理对薄膜的微观结构和光学性质的影响, 并对沉积态薄膜的粉末进行了热分析。沉积态的NiOx薄膜在262 ℃时开始分解, 导致NiOx薄膜的透过率增加和反射率降低。X射线衍射和示差扫描量热曲线(DSC)分析表明, 在热处理过程中并无物相的变化, 光学性质的变化是由于NiOx薄膜热分解引起薄膜表面形貌发生变化而引起的。通过Kissinger公式计算出

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利用直流磁控溅射法在不同氧氩分压比条件下制备了BiOx薄膜。通过对薄膜在蓝光作用前后的反射率对比度变化的研究发现,氧氩分压比为50%时制备的薄膜具有最佳的光学对比度。利用X射线衍射仪(XRD)、X光电子能谱(XPS)和光谱仪研究了薄膜热处理前后的结构和光谱性质的变化。研究结果表明薄膜光学性质变化主要由薄膜中氧化铋的相变引起。蓝光静态测试结果显示氧氩分压比为50%条件下制备的BiOx薄膜具有很好好的记录敏感度,在11mW的记录功率和800ns的记录脉宽条件下,得到了52%的反射率对比度。此外,BiOx薄膜表现出了非常好的读出稳定性。

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由于硝酸钡晶体具有很强的对称振动(频率1047 cm^-1)和较高的拉曼增益,可以用来产生受激拉曼激光.采用单端泵浦的外置拉曼振荡腔与双棱镜分光装置进行了硝酸钡晶体拉曼激光实验,泵浦源为倍频Nd: YAG的532 nm激光,硝酸钡晶体通过水溶液降温法生长,尺寸为10 mm×10 mm×48 mm,采用特殊镀膜的腔镜对各阶斯托克斯光进行优化选择.在泵浦源达到65 mJ时,获得21 mJ一阶斯托克斯光,输出波长为563 nm,以及16 mJ的二阶斯托克斯光,输出波长为599 nm,受激拉曼散射SRS最大的整体

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提出了基于菲佐干涉仪和多通道光电倍增管(PMT)阵列探测器组合的多普勒频移检测的方案, 适用于风速测量的直接探测多普勒激光雷达。首先介绍了工作原理, 再根据菲佐干涉仪光谱特征对频移检测用干涉仪进行了优化设计, 优化设计的菲佐干涉仪腔长150mm、平板反射率0.755。对提出的菲佐干涉仪和多通道光电倍增管阵列探测器组合的方案进行了数值模拟, 以分子散射作为背景噪声, 计算了该方法的风速测量误差。模拟结果表明, 设计的基于菲佐干涉仪的直接探测多普勒测风激光雷达, 在30 s的积分时间内、探测高度5 km以下,

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We report on the fabrication and characterization of low-loss planar and stripe waveguides in a Nd3+-doped glass by 6 MeV oxygen-ion implantation at a dose of 1x10(15) ions/cm(2). The dark mode spectroscopy of the planar waveguide was measured using a prism coupling arrangement. The refractive index profile of the planar waveguide was reconstructed from a code based on the reflectivity calculation method. The results indicate that a refractive index enhanced region as well as an optical barrier have been created after the ion beam processing. The near-field mode profiles of the stripe waveguide were obtained by an end-fire coupling arrangement, by which three quasitransverse electric modes were observed. After annealing, the propagation losses of the planar and stripe waveguides were reduced to be similar to 0.5 and similar to 1.8 dB/cm, respectively. (c) 2007 American Institute of Physics.

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研究了氙灯抽运脉宽、输出耦合镜的反射率、铒玻璃工作温度以及工作重复频率对铬镱铒共掺磷酸盐玻璃激光输出能量的影响。结果表明, 对于输出能量, 抽运脉宽为2.3 ms(10%最大幅度间)时较好; 综合考虑激光阈值和斜率效率, 输出耦合镜的反射率为85%时较好。此外, 如同大多数激光介质那样, 铬镱铒共掺磷酸盐玻璃的激光输出能量随铒玻璃工作温度的升高和工作重复频率的增加而降低。

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Nd:silicate glass was implanted at room temperature by 6.0 MeV C3+ ions with a dose of 2.0 x 10(15) ions cm(-2). A waveguide with thickness of about 6.3 mu m was formed. The prism-coupling method was used to observe the dark modes of the waveguide at 633 nm and 1539 nm, respectively. There are three dark modes at 633 nm, of which one is the enhanced-index mode. The propagation loss of the enhanced-index mode in the waveguide measured at 633 nm is 0.42 dB cm(-1) after annealing at 217 degrees C for 35 min. The reflectivity calculation method was applied to simulate the refractive index profiles in the waveguide. The mode optical near-field output at 633 nm was presented.

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研究了中子辐照下钛宝石单晶体缺陷的形成及光学性能的变化。对温度梯度法(TGT)生长的钛宝石晶体进行中子辐照。中子能量为1.5MeV,剂量为4.32×10^18 neutrons/cm^2。辐照后194nm吸收峰强度增加,268nm吸收峰强度则降低。荧光谱检测中发现辐照使得420nm荧光峰强度明显降低,荧光峰位置也蓝移至414nm处。分析表明辐照使得钛宝石晶体内形成F^+缺陷,同时Ti^4+离子则转化成Ti^3+离子。辐照后的钛宝石在247C处有热释光TL出现,通过初始上升法计算出其陷阱深度为0.63eV。

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研究了中子辐照对蓝宝石(α-Al2O3)单晶体缺陷形成及光学性能的影响,对采用提拉法与温度梯度法生长的蓝宝石晶体进行中子辐照,通过对比辐照前后的吸收及荧光光谱变化,发现辐照使得蓝宝石晶体内形成F、F^+和F2^+色心缺陷,但不同方法生长的晶体样品中色心浓度差异明显。其中提拉法样品的F心浓度要高于温度梯度法样品,而温度梯度法样品中F^+色心浓度要高于提拉法样品。分析表明,这与两种方法生长的晶体中杂质含量差异有关。通过研究辐照后晶体的热致发光谱发现提拉法与温度梯度法生长的蓝宝石晶体分别在145℃与150℃有明

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Considering the interface absorption in optical coatings, we propose a model to simulate interface absorption. Calculations are made and the temperature field of several kinds of thin film multilayers, including those of partial reflectivity, high-reflectivity, and antireflectivity coatings are analyzed. The interface absorption is found to greatly influence the temperature distribution within multilayer coatings and to weaken the laser damage resistance of the samples. The real-time results of the photothermal deflection technique for laser induced damage to samples supports the model. (C) 1997 Society of Photo-Optical Instrumentation Engineers.

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阐述了用光学薄膜进行色散补偿的基本原理,介绍了设计的基本过程.根据Ti:Sapphire飞秒激光器中腔内色散补偿的要求,设定了色散补偿目标,通过计算机优化,得到了一种40层的Ta2O5/SiO2介质膜系.该膜系能在720~870am范围获得大于99.5%的反射率,在510~550nm获得大于90%的透射率,在740~850nm提供较平滑的-40fs^2的群延迟色散.这样的结果经过7次反射后,可以补偿5-mm Ti:sapphire晶体产生的绝大部分群延迟色散。