Effects of crystalline quality on the ultraviolet emission and electrical properties of the ZnO films deposited by magnetron sputtering

The ZnO films were deposited on c-plane sapphire, Si (0 0 1) and MgAl2O4 (1 1 1) substrates in pure Ar ambient at different substrate temperatures ranging from 400 to 750 degrees C by radio frequency magnetron sputtering. X-ray diffraction, photoluminescence and Hall measurements were used to evaluate the growth temperature and the substrate effects on the properties of ZnO films. The results show that the crystalline quality of the ZnO films improves with increasing the temperature up to 600 degrees C, the crystallinity of the films is degraded as the growth temperature increasing further, and the ZnO film with the best crystalline quality is obtained on sapphire at 600 degrees C. The intensity of the photoluminescence and the electrical properties strongly depend on the crystalline quality of the ZnO films. The ZnO films with the better crystallinity have the stronger ultraviolet emission, the higher mobility and the lower residual carrier concentration. The effects of crystallinity on light emission and electrical properties, and the possible origin of the n-type conductivity of the undoped ZnO films are also discussed. (C) 2009 Elsevier B. V. All rights reserved.

Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows

AlInGaN quaternary epilayers have been grown with various TMGa flows by metalorganic chemical vapor deposition to investigate the influence of growth rate on the structural and optical properties. Triple-axis X-ray diffraction measurements show AlInGaN epilayers have good crystalline quality. Photolummescence (PL) measurements show that the emission intensity of AlInGaN epilayers is twenty times stronger than that of AlGaN epilayer with comparable Al content. V-shaped pits are observed at the surface of AlInGaN epilayers by atomic force microscopy (AFM) and transmission electron microscopy (TEM). High growth rate leads to increased density and size of V-shaped pits, but crystalline quality is not degraded. (C) 2003 Elsevier B.V. All rights reserved.

Stability of GaAs photocathodes under different intensities of illumination

The photocurrent curves of reflection-mode GaAs photocathodes as a function of time, when were illuminated by white light with an intensity of 0, 33 and 100 Ix, respectively, were measured using a multi-information measurement system. The calculated lifetimes of cathodes are 320, 160 and 75 min, respectively, showing that the stability of cathodes degraded with the increase of light intensity. The lifetime of cathode, illuminated by white light with an intensity of 100 Ix, while no photocurrent was being drawn during the illumination, was 100 min. Through comparison, we found that the influence of illumination on cathodes stability is greater than that of photocurrent. The quantum-yield curves of cathodes as a functions of time, when illuminated by white light with an intensity of 33 Ix, were measured also. The measured results show that the shape of the yield curves changes with increasing illumination time due to the faster quantum-yield degradation rate of low energy photons. Based on the revised quantum-efficiency equations for the reflection-mode cathodes, the variation of yield curves are analyzed to be due to the intervalley diffusion of photoelectrons and the evolution of the surface potential barrier profile of the photocathodes during degradation process.

Structure optimization of field-plate AlGaN/GaN HEMTs

AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC with varying field-plate length and gate-drain spacing were fabricated and analyzed. The classical small signal FET model and the well-known ColdFET method were used to extract the small signal parameters of the devices. Though the devices with field plates exhibited lower better f(T) characteristic, they did demonstrate better f(max), MSG and power density performances than the conventional devices without field plate. Besides, no independence of DC characteristic on field-plate length was observed. With the increase of the field-plate length and the gate-drain spacing, the characteristic of f(T) and f(max), degraded due to the large parasitic effects. Loadpull method was used to measure the microwave power performance of the devices. Under the condition of continuous wave at 5.4 GHz, an output power density of 4.69 W/mm was obtained for device with field-plate length of 0.5 mu m and gate-drain length of 2 mu m. (c) 2006 Elsevier Ltd. All rights reserved.

Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD

High-performance violet light-emitting diodes (LEDs) with InGaN/AlInGaN multiple quantum well (MQW) active regions were grown by metal organic chemical vapor deposition (MOCVD). The interface flatness of the InGaN/AlInGaN MQWs and the emission efficiency of the LED are firstly improved with increasing Al content in the AlInGaN barrier layer, and then degraded as Al content increases further, being optimal when Al content is 0.12. Similarly, the result is optimized if the indium content is approximately 2.5% in the AlInGaN barrier layer. The mechanisms which have influences on the radiative efficiency when the Al content increases are discussed. A high output power of 7.3 mW for the violet LED at 20 mA current has been achieved. (c) 2006 Elsevier B.V. All rights reserved.

Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells

Thermal annealing of GaInAs/GaNAs quantum wells (QWs) as well as other nitrogen- and indium-contained QW structures grown by molecular beam epitaxy and its effect on optical properties are investigated. The photoluminescence (PL) and photovoltaic (PV) spectra of annealed GaInAs/GaNAs QWs show that the luminescence properties become degraded due to the N diffusion from the GaNAs barrier layers to the GaInAs well layer. Meantime, the annealing-induced blueshift of the PL peak in this QW system is mainly induced by the change of In distribution, suggesting that the In reorganization is greatly assisted by the N-induced defects. The elucidation of annealing effect in GaInAs/GaNAs QW samples is helpful for a better understanding to the annealing effect in the GaInNAs/GaAs QWs. (C) 2003 Elsevier Science B.V. All rights reserved.

Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50). (C) 2001 Elsevier Science B,V. All rights reserved.

Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X

The effects of plasma induced damage in different conditions of ICP and PECVD processes on LEDs were presented. For ICP mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type GaN, a photoluminescence (PL) measurement was investigated with different rf chuck power. It was founded the PL intensity of the peak decreased with increasing DC bias and the intensity of sample etched at a higher DC bias of -400V is less by two orders of magnitude than that of the as-grown sample. Meanwhile, In the IN curve for the etched samples with different DC biases, the reverse leakage current of higher DC bias sample was obviously degraded than the lower one. In addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by PECVD. The PL intensity of samples deposited with different powers sharply decreased when the power was excessive. The PL spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. A two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power.

Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G

High quality ZnO films have been successfully grown on Si(100) substrates by Metal-organic chemical vapor deposition (MOCVD) technique. The optimization of growth conditions (II-VI ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on ZnO films' crystal quality, surface morphology and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectrum, respectively. The XRD patterns of the films grown at the optimized temperature (300 degrees C) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal ZnO, and the FWHM was lower than 0.4 degrees. We find that under the optimized growth conditions, the increase of the ZnO films' thickness cannot improve their structural and optical properties. We suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between Si and ZnO. In PL analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality ZnO films obtained. Thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. Through the analysis of PL spectra, we found that ZnO films annealing in oxygen have the strongest intensity and the low FWHM of 10.44 nm(106 meV) which is smaller than other reported values on ZnO films grown by MOCVD.

All-optical clock recovery using a ridge width varied two-section partly gain-coupled DFB self-pulsation laser

A 1.55 mu m InGaAsP-InP partly gain-coupled two-section DFB self-pulsation laser (SPL) with a varied ridge width has been fabricated. The laser produces self-pulsations with a frequency tuning range of more than 135 GHz. All-optical clock recovery from 40 Gb/s degraded data streams has been demonstrated. Successful lockings of the device at frequencies of 30 GHz, 40 GHz, 50 GHz, and 60 GHz to a 10 GHz sidemode injection are also conducted, which demonstrates the capability of the device for all-optical clock recovery at different frequencies. This flexibility of the device is highly desired for practical uses. Crown Copyright

黄河首曲湿地功能区“黑土滩”退化草甸恢复改良

采用样方法研究了首曲湿地功能区"黑土滩"退化草甸改良后3 a的群落特征变化,分析了围栏封育和补播"高寒1号"生态组合草种对退化草甸的恢复改良效果.结果显示:仅封育3 a后,"黑土滩"退化草甸群落的盖度、高度、地上生物量和可食牧草比例均显著提高,丰富度指数由0.55增加到0.75,多样性指数由0.07增加到了0.25;封育后补播"高寒1号"生态草种相对于封育前,使得退化草甸的盖度增加了56.00%,高度增加了11.74 cm,地上生物量增加了222.24 g/m~2,可食牧草比例增加了55.98%,物种数由5种/m~2增加到了15种/m~2,丰富度指数由0.55增加到了3.29,多样性指数由0.07增加到了1.85,均匀度指数由0.06增加到了0.27.相对围栏封育而言,封育后补播是一种更有效的"黑土滩"退化草甸改良恢复措施.围栏封育和补播配套实施可以显著改善"黑土滩"退化草地的群落貌相、草地生产力和组分结构状况.

黄土高原丘陵沟壑区草地植物群落健康动态评价

植被恢复重建是遏制水土流失的有效措施之一,研究植被恢复重建过程、评价植物群落健康状况对加速植被建设具有重要的实践意义。本文根据黄土丘陵沟壑区的特点,建立了植物群落健康评价指标体系,对草地植被恢复重建过程中的不同阶段的植物群落的健康状况进行了评价。结果表明:植被群落活力变化过程呈抛物线型;群落组织力基本呈波动性变化;恢复力的变化则与活力变化过程相反,在群落活力达到最高水平时,群落的恢复力降至最低;土壤健康呈波动性上升的变化趋势。综合评价表明,植物群落健康水平随着演替过程的发展呈波动性且逐渐上升的变化过程。

草地植被恢复对次降雨土壤水分动态的影响分析

通过对宁南典型草原植被恢复过程次降雨土壤水分动态的研究,阐明植被恢复对次降雨后土壤水分的影响及机理。结果表明,次降雨提高了土壤含水率和贮水量,均表现出1 d>3 d>7 d。草地封育能够提高次降雨资源化效率,随封育时间延长,次降雨后0-60 cm土壤含水率和0-100 cm土壤贮水量不断提高。降雨对封育草地土壤水分的影响范围在100 cm土层内,100 cm以下不能得到降雨的补充。封育时间延长土壤水分活跃层加深,坡耕地仅为40 cm,封育17 a后达到60 cm。土壤持水能力越强,表层土壤饱和导水率越大,雨后1 d在0-100 cm土壤贮水量越大。地上生物量愈大,雨后1~7 d在0-200 cm土壤耗水量越大。

毛乌素沙区土壤养分对湿地退化的响应

采用湿地生态理论中空间替代时间的研究方法,以毛乌素沙区退化湿地为研究对象,选择距退化湿地水面不同距离,具有不同地下水位埋深的研究区域代表湿地不同退化阶段,通过分析5个不同阶段退化湿地土壤的有机质、全氮、全磷随水平距离的变化特征,研究了土壤养分对湿地退化不同退化程度的响应特征。结果表明,不同退化阶段土壤有机质与全氮剖面均具有一个明显的富集层,既湿地退化前的泥炭沉积层。该沉积层在剖面中所处深度随退化程度的加剧而逐渐增加,且沉积层以上深度的有机质和全氮含量趋于一致。土壤中全磷含量在剖面波动较大,分布特征无明显规律,不同水平距离全磷平均含量无明显变化规律说明湿地退化对全磷含量无明显影响。以上研究结果表明,由于流动沙丘入侵是导致毛乌素沙地湿地退化的首要原因,湿地退化导致土壤有机质和全氮富集层深度逐渐下移,平均含量逐渐下降,而对全磷影响不大。

半干旱典型草原区封育草地土壤结构特征研究

以宁夏固原云雾山自然保护区典型草原为研究对象,采用空间序列代替时间序列的方法,以坡耕地为对照,对封育演替草地百里香(Thymus mongolicus Ronn.)、铁杆蒿(Artemisia sacrorum Ledeb.)、大针茅(Stipa grandis P.Smirn.)和本氏针茅(Stipa bungeana Trin.)群落0~10 cm表层土壤水稳性团聚体分布、孔隙度及土壤结构评价指标进行了研究和分析。结果表明:草地实施封育措施能明显改善土壤结构特征,随着草地植被自然演替,土壤的结构稳定性和孔隙状况逐步得到提高;在演替过程中,封育草地土壤的>0.25 mm水稳性团聚体含量(WSAC)、平均重量直径(MWD)、几何平均直径(GMD)和孔隙分形维数(Dp)逐渐增加,团聚体分形维数(Da)逐渐减少,说明植被演替能促进形成良好的土壤结构;同时,土壤结构影响因素随着草地植被演替过程表现出有机碳含量显著增加,容重显著降低,毛管孔隙度逐渐增大,非毛管孔隙度逐渐降低。本研究还比较了多项土壤结构评价指标,表明与MWD和GMD相比,指标WSAC(>0.25 mm)、Da及Dp能更好地反映出各封育草地群落之间土壤结...