Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method

We report the growth of hexagonal ZnO nanorods and nanoflowers on GaN-based LED epiwafer using a solution deposition method. We also discuss the mechanisms of epitaxial nucleation and of the growth of ZnO nanorods and nanoflowers. A GaN-based LED epiwafer was first deposited on a sapphire substrate by MOCVD with no electrode being fabricated on it. Vertically aligned ZnO nanorods with an average height of similar to 2.4 mu m were then grown on the LED epiwafer, and nanoflowers were synthesized on the nanorods. The growth orientation of the nanorods was perpendicular to the surface, and the synthesized nanoflowers were composed of nanorods. The micro-Raman spectra of the ZnO nanorods and nanoflowers are similar and both exhibit the E-2 (high) mode and the second-order multiple-phonon mode. The photoluminescence spectrum of ZnO nanostructures exhibits ultraviolet emission centred at about 380 nm and a broad and enhanced green emission centred at about 526 nm. The green emission of the ZnO nanostructures combined with the emission of InGaN quantum wells provides a valuable method to improve the colour rendering index (CRI) of LEDs.

Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells

This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC: H thin film with optical gap of 1.92 eV and activation energy of 0.06 eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC : H/a-Si : H solar cells have been successfully prepared with a V-oc of 0.94 eV.

Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition

A novel 10-period SiC/AlN multilayered structure with a SiC cap layer is prepared by low pressure chemical vapour deposition (LPCVD). The structure with total film thickness of about 1.45 mu m is deposited on a Si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3 nm. According to the secondary ion mass spectroscopy results, good interface of the 10 period SiC/AlN structure and periodic changes of depth profiles of C, Si, Al, N components are obtained by controlling the growth procedure. The structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. To the best of our knowledge, this is the first report of growth of the SiC/AlN periodic structure using the home-made LPCVD system.

Effect of growth conditions on the GaN thin film by sputtering deposition

The phase transition between thermodynamically stable hexagonal wurtzite (h-WZ) gallium nitride (GaN) and metastable cubic zinc-blende (c-ZB) GaN during growth by radio-frequency planar magnetron sputtering is studied. GaN films grown on substrates with lower mismatches tend to have a h-WZ structure, but when grown on substrates with higher mismatches, a c-ZB structure is preferred. GaN films grown under high nitrogen pressure also tend to have a h-WZ structure, whereas a c-ZB structure is preferred when grown under low nitrogen pressure. In addition, low target-power growth not only helps to improve hexagonal GaN (h-GaN) crystalline quality at high nitrogen pressure on low-mismatch substrates, but also enhances cubic GaN (c-GaN) quality at low nitrogen pressure on high-mismatch substrates. (c) 2007 Elsevier B.V. All rights reserved.

Growth of AlGaN epitaxial film with high Al content by metalorganic chemical vapour deposition

A high-Al-content AlGaN epilayer is grown on a low-temperature-deposited AlN buffer on (0001) sapphire by low pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity, and twisted mosaicity on the conditions of the AlGaN epilayer deposition is evaluated. An AlGaN epilayer with favourable surface morphology and crystal quality is deposited on a 20 nm low-temperature-deposited AlN buffer at a low V/III flow ratio of 783 and at a low reactor pressure of 100 Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.

Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition

Rutherford backscattering and channeling is combined with X-ray diffraction to study the depth dependence of crystalline quality in InN layers grown by metalorganic chemical vapor deposition on sapphire substrate. The poorest crystalline quality in InN layer is produced at the intermediate region over 100 nm away from the InN/sapphire interface. With increasing layer thickness the crystalline quality improves to a certain degree dependent on the growth temperature. The InN sample grown at 450 degrees C is found to be more homogeneous than the sample grown at 550 degrees C. The difference in the defect profile is explained by the temperature-dependent growth modes. The inhomogeneity of structural quality and related properties such as carrier concentration and strain field is possibly the reason to observe a high energy wing in PL spectrum of the InN sample grown at 550 degrees C. (c) 2006 Elsevier B.V All rights reserved.

Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition

The effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition is investigated. With the increase of trimethylalluminum (TMAl) flux, the crystal quality becomes worse, and the epilayer surface becomes rougher. An interesting phenomenon is that the growth rate of AlGaN decrease with increasing TMAl flux, which is opposite to the AlN growth rate dependence on the TMAl flux. All these effects are attributed to the different properties of At atoms due to the higher bond strength of Al-N compared with Ga-N, which lead to lower surface mobility and stronger competitive ability of Al atoms during the growth. The enhancement of the surface mobility of Al is especially important for improving the quality of AlGaN. (c) 2006 Elsevier B.V. All rights reserved.

Slow light at terahertz frequencies in surface plasmon polariton assisted grating waveguide

National Natural Science Foundation of China 60677045 60876049

ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target

ZnO thin films with highly c-axis orientation have been fabricated on p-type Si(1 1 1) substrates at 400 degrees C by pulsed laser deposition (PLD) from a metallic Zn target with oxygen pressures between 0.1 and 0.7 mbar. Experimental results indicate that the films deposited at 0.3 and 0.5 mbar have better crystalline and optical quality and flatter surfaces than the films prepared at other pressures. The full width at half maximum (FWHM) of (0 0 0 2) diffraction peak decreases remarkably from 0.46 to 0.19 degrees with increasing annealing temperature for the film prepared at 0.3 mbar. In photoluminescence (PL) spectra at room temperature, the annealed film at 700 degrees C exhibits a smaller ultraviolet (UV) peak FWHM of 108 meV than the as-grown film (119 meV). However, an enhanced deep-level emission is observed. Possible origins to above results are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Growth of single crystalline ZnxCd1-xS nanocombs by metallo-organic chemical vapor deposition

Single crystalline ternary ZnxCd1-xS nanocombs, which have 'comb' shaped' teeth on one side, have been synthesized by a one-step metallo-organic chemical vapor deposition process at a low temperature of 420 degrees C. The asymmetric, growth behavior of the nanocombs is likely to be induced by the polarization of the c-ptane. Because of the uniform structure and perfect geometrical shape, the nanoteeth could be potentially useful as nanocantilever arrays for nanosensors and, nanotweezers. (c) 2006 Elsevier B.V. All rights reserved.

Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition

The structural property of InN films grown on Ga-face GaN layers by metal-organic chemical vapor deposition has been studied by high-resolution x-ray diffraction. The mosaic tilt and twist are found to be strongly dependent on the surface lateral grain size. The twist decreases with increasing grain size and finally approaches to a constant level. On the other hand, the mosaic tilt increases substantially when the grain size becomes large enough and exceeds the width of step terraces on the GaN surface, showing an important mechanism for the defect generation in the InN/GaN system with large out-of-plane lattice mismatch. (c) 2006 American Institute of Physics.

Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition

Mosaic structure in InN layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by X-ray diffraction (XRD). With a combination of Williamson-Hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 degrees C leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in InN films in a, respectively, monotonic way. In particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. Atomic force microscopy shows the morphological difference of the InN nucleation layers grown at 450 and 550 degrees C. Different coalescence thickness and temperature-dependent in-plane rotation of InN nuclei are considered to account for the XRD results. (c) 2006 Elsevier B.V. All rights reserved.

InN nanoflowers grown by metal organic chemical vapor deposition

Hexangular indium nitride nanoflower pattern is observed from scanning electron microscopy and atomic force microscopy. The sample is grown on c-plane (0001) sapphire by metal organic chemical vapor deposition with intentional introduction of hydrogen gas. With the aid of hydrogen, a stable existence of metallic indium is achieved. This will induce the growth of InN nanoflowers via self-catalysis vapor-liquid-solid (VLS) process. It is found that the VLS process is modulated by the interface kinetics and thermodynamics among the sapphire substrate, indium, and InN, which leads to the special morphology of the authors' InN nanoflower pattern. (c) 2006 American Institute of Physics.

Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

The effects of In doped low-temperature (LT) AlGaN interlayer on the properties of GaN/Si(111) by MOCVD have been investigated. Using In doping LT-interlayer can decrease the stress sufficiently for avoiding crack formation in a thick (2.0 mu m) GaN layer. Significant improvement in the crystal and optical properties of GaN layer is also achieved. In doping is observed to reduce the stress in AlGaN interlayer measured by high-resolution X-ray diffraction (HRXRD). It can provide more compressive stress to counteract tensile stress and reduce crack density in subsequent GaN layer. Moreover, as a surfactant, indium is observed to cause an enhanced PL intensity and the narrowed linewidths of PL and XRD spectra for the LT-interlayer. Additionally, the crystal quality of GaN layer is found to be dependent on the growth parameters of underneath In-doped LT-AlGaN interlayer. The optimal parameters, such as TMIn flow rate, TMAl flow rates and thickness, are achieved to obtain nearly 2.0 mu m thick crack free GaN film with advanced optical and crystal properties. (c) 2005 Elsevier B.V. All rights reserved.

Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates

Magnetophotoluminescence properties of Zn0.88Mn0.12Se thin films grown by metal-organic chemical vapor deposition on GaAs substrates are investigated in fields up to 10 T. The linewidth of the excitonic luminescence peaks decreases with the increasing magnetic field (< 1 T), but the peak energy is almost unchanged. There is a crossover of the photoluminescence intensities between interband and bound excitonic transitions as the magnetic field is increased to about 1 T. These behaviors are interpreted by the strong tuning of the local alloy disorder potential by the applied magnetic field. In addition, the magnetic field-induced suppression of the energy transfers from excitons to Mn2+ ions is also observed.