Optimization of the multiwavelength erbium-doped fiber laser in a unidirectional cavity without an isolator

A highly uniform multiwavelength erbium-doped fiber ring laser with an intracavity sine phase modulator is demonstrated. The flat output spectrum is achieved by optimizing the cavity structure, modulation amplitude, and frequency of the sine phase modulator. Fifteen lasing lines with wavelength spacing of 0.9 nm appear simultaneously and stably with power differences less than 2 dB and side-mode suppression ratio higher than 32 dB. In addition, the proposed cavity can support unidirectional operation without optical isolators. An output power difference of about 20 dB is realized between the counterclockwise and clockwise directions, which is almost independent of the pump power and lasing wavelengths. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Lau cavity and phase locking of laser arrays

The Lau cavity is the self-imaging cavity with a phase corrector under the Lau reimaging condition. The author proposes the use of the Lau cavity to utilize both the Talbot and the Lau effects for phase locking one-dimensional and two-dimensional diode-laser arrays into a single-lobe coherent beam. Analyses on the self-reproducing of a coherent lasing field and the reimaging of initial incoherent radiation are given.

Optimization of the multiwavelength erbium-doped fiber laser in a unidirectional cavity without an isolator

A highly uniform multiwavelength erbium-doped fiber ring laser with an intracavity sine phase modulator is demonstrated. The flat output spectrum is achieved by optimizing the cavity structure, modulation amplitude, and frequency of the sine phase modulator. Fifteen lasing lines with wavelength spacing of 0.9 nm appear simultaneously and stably with power differences less than 2 dB and side-mode suppression ratio higher than 32 dB. In addition, the proposed cavity can support unidirectional operation without optical isolators. An output power difference of about 20 dB is realized between the counterclockwise and clockwise directions, which is almost independent of the pump power and lasing wavelengths. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Instabilities in a grating feedback external cavity semiconductor laser

Output power fluctuations in a grating external cavity diode laser with Littman configuration are described, showing peculiar chaotic behaviors of self-pulsation at the L-I curve kink points. Different spectral characteristics with multiple peaks are observed at upper and lower state of the self-pulsation. It is found also that P-N junction voltage jumps in a same pace with the pulsation. The observed phenomena reflect competition between different longitudinal modes, and transient variation of transverse modes in addition. These experimental results may contain information about the mechanisms of the chaotic instability in strong filtered feedback semiconductor lasers. (C) 2008 Optical Society of America

Dynamic analysis of V-folded cavity for TEM00 operation of end-pumped solid-state laser

Based on graphic analysis design method of optical resonator, a simple design expression of V-folded cavity of end-pumped solid-state lasers with TEM00 operation is described, which satisfies two criterias of the resonator design. We give numerical simulation of spot size as a function of thermal focal length using this design approach whose advantages are validated experimentally.

A compact diode-pumped injection seeded Nd : YAG laser with resonance-detection technique

A diode pumped injection seeded single-longitudinal-mode (SLM) Nd:YAG laser is achieved by using the resonance-detection technique in Q-switching operation. The pulsed oscillator laser uses a folded cavity to achieve compact construction. This system operates at 100 Hz and provides over 20 mJ/pulse of single-frequency 1064 nm output. The M-2 values of horizontal and vertical axes are 1.58 and 1.41, respectively. The probability of putting out single-longitudinal-mode pulses is 100%. The 355 nm laser output produced by frequency tripling has a linewidth less than 200 MHz. The laser can run over eight hours continually without mode hopping.

Line-width reduction of a laser diode array using an external cavity with two feedback mirrors

A novel Littman-Metcalf external cavity laser diode array with two feedback mirrors is introduced. The line-width broadening effect caused by smile can be reduced by the novel external cavity. At the drive current of 16A, the line-width is narrowed to 0.1nm from free-running width of 1.6nm with output efficiency of 84%.

Beam quality improvement of laser diode array by using off-axis external cavity

A novel off-axis external cavity is designed for laser diode array to improve the beam quality. In this external cavity, a circle aperture with variable size is used as a spatial filter. The diameter of aperture is optimized to 1.2mm and the off-axis angle of external cavity is optimized at 2.6 deg. In the optimal case, the beam parameter product (BPP) of laser diode array is reduced to 121 mm. mrad from 1050 mm. mrad with external cavity optical efficiency of 81%. (C) 2007 Optical Society of America.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Room-temperature photonic crystal laser in H3 cavity on InGaAsP/InP slab

We fabricate and investigate two-dimensional photonic crystal H3 microcavities in an InGaAsP slab. The lasing action at room temperature is observed. The lasering threshold is 7mW under the pulsed pump of 0.75% duty cycle. The Q factor and the lasing mode characteristics are simulated by three-dimensional finite difference time domain method. The simulation result matches well with the experiment.

Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing

SiO2-TiO2 sol-gel films are deposited on SiO2/Si by dip-coating technique. The SiO2-TiO2 strips are fabricated by laser direct writing using all ytterbium fiber laser and followed by chemical etching. Surface structures, morphologies and roughness of the films and strips are characterized. The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in Structure and a shrinkage concave groove forms if the film is irradiated by laser beam. The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time. But the roughness of laser irradiated area increases more than that of non-irradiated area under the same etching time. After being etched for 28 s, the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm.

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd YVO4 laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%. (C) 2008 Elsevier B.V. All rights reserved.