Quantitative measurement of domain inversion in RuO2 : LiNbO3 crystal by digital holographic interferometry

We quantitatively study the domain inversion in a RuO2:LiNbO3 crystal wafer by the digital holographic interferometry. The crystal wafer is placed into one arm of a Mach-Zehnder-type interferometer to record a series of holograms. Making use of the angular spectrum backward propagation algorithm, we reconstruct the optical wave field in the crystal plane. The extracted phase difference from the reconstructed optical wave field is a well linear function of the applied external voltage. We deduce that the linear electro-optic coefficient of the detected RuO2:LiNbO3 crystal sample is 9.1x10(-12) m/V. An unexpected phase contrast at the antiparallel domain wall is observed and the influence of the applied external voltage on it is studied in detail. Also the built-in internal field is quantitatively measured as 0.72 kV/mm. (c) 2006 American Institute of Physics.

Wavefront conversion by local volume holograms between cylindrical and plane waves with reconstruction at a different readout wavelength

Based on the two-dimensional coupled-wave theory, the wavefront conversion between cylindrical and plane waves by local volume holograms recorded at 632.8 nm and reconstructed at 800 nm is investigated. The proposed model can realize the 90 degrees holographic readout at a different readout wavelength. The analytical integral solutions for the amplitudes of the space harmonics of the field inside the transmission geometry are presented. The values of the off-Bragg parameter at the reconstructed process and the diffracted beam's amplitude distribution are analysed. In addition, the dependences of diffraction efficiency on the focal length of the recording cylindrical wave and on the geometrical dimensions of the grating are discussed. Furthermore, the focusing properties of this photorefractive holographic cylindrical lens are analysed.

Wavefront measurement of double-clad pulsed ytterbium fiber laser

Because of high efficiencies, compact structure, and excellent heat dissipation, high-power fiber lasers are extremely useful for applications such as cutting, welding, precision drilling, trimming, sensing, optical transmitter, material processing, micromachining, and so on. However, the wavefront of the double clad fiber laser doped with ytterbium is still unknown. In this paper, wavefront of a fiber laser is measured and the traditional Hartmann-shack wavefront sensing method is adopted. We measured a double clad fiber laser doped with ytterbium which produces pulse wave output at infrared wavelength. The wavefront shape and contour are reconstructed and the result shows that wavefront is slightly focused and not an ideal plane wavefront. Wavefront measurement of fiber laser will be useful to improving the lasers' performance and developing the coherent technique for its applications.

A novel method to determine the FOCAL energy range

Determination of the energy range is an important precondition of focus calibration using alignment procedure (FOCAL) test. A new method to determine the energy range of FOCAL off-lined is presented in this paper. Independent of the lithographic tool, the method is time-saving and effective. The influences of some process factors, e.g. resist thickness, post exposure bake (PEB) temperature, PEB time and development time, on the energy range of FOCAL are analyzed.

平面交叉型微透镜阵列的制作及成像特性研究

介绍了采用光刻离子交换工艺制作平面交叉型微透镜阵列的方法。利用积分形式的光线方程式讨论了平面交叉型微透镜的近轴光学特性，研究了微透镜的光线轨迹方程式和一些重要的近轴成像特性，利用ABCD定理得到了平面交叉型微透镜像距、焦距、像高、横向放大率和主平面位置的数学表达式，焦距的理论计算结果和实验数据吻合得很好。

Optical generaton of millimeter-wave pulses using a fiber Bragg grating in a fiber-optics system

A scheme is proposed to transform an optical pulse into a millimeter-wave frequency modulation pulse by using a weak fiber Bragg grating (FBG) in a fiber-optics system. The Fourier transformation method is used to obtain the required spectrum response function of the FBG for the Gaussian pulse, soliton pulse, and Lorenz shape pulse. On the condition of the first-order Born approximation of the weak fiber grating, the relation of the refractive index distribution and the spectrum response function of the FBG satisfies the Fourier transformation, and the corresponding refractive index distribution forms are obtained for single-frequency modulation and linear-frequency modulation millimeter-wave pulse generation. The performances of the designed fiber gratings are also studied by a numerical simulation method for a supershort pulse transmission. (c) 2007 Optical Society of America.

Corrections to the paraxial approximation of an arbitrary free-propagation beam

A relatively simple transform from an arbitrary solution of the paraxial wave equation to the corresponding exact solution of the Helmholtz wave equation is derived in the condition that the evanescent waves are ignored and is used to study the corrections to the paraxial approximation of an arbitrary free-propagation beam. Specifically, the general lowest-order correction field is given in a very simple form and is proved to be exactly consistent with the perturbation method developed by Lax et nl. [Phys. Rev. A 11, 1365 (1975)]. Some special examples, such as the lowest-order correction to the paraxial approximation of a fundamental Gaussian beam whose waist plane has a parallel shin from the z = 0 plane, are presented. (C) 1998 Optical Society of America.

Pure-phase plates for super-Gaussian focal-plane irradiance profile generations of extremely high order

A set of recursive formulas for diffractive optical plates design is described. The pure-phase plates simulated by this method homogeneously concentrate more than 96% of the incident laser energy in the desired focal-plane region. The intensity focal-plane profile fits a lath-order super-Gaussian function and has a nearly perfect flat top. Its fit to the required profile measured in the mean square error is 3.576 x 10(-3). (C) 1996 Optical Society of America

Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method

E2SiO5 thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er2SiO5 crystalline structure was formed as sample treated at 1100 degrees C for 1 h in O-2 atmosphere. Through proper thermal treatment, the 1.53 mu m Er3+-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 degrees C. Analysis of pump-power dependence of Er3+ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10(21) (photons/cm(2)/sec). Temperature-dependent photoluminescence (PL) of Er2SiO5 was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er2SiO5 films has been demonstrated with Er3+ concentration of 10(22)/cm(3), and it opens a promising way towards future Si-based light source for Si photonics. (C) 2009 Elsevier B.V. All rights reserved.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of -0.89 GPa.

Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]

Sixfold symmetry of excitonic transition energies in c-plane for wurtzite GaN

The optical properties of the strained wurtzite GaN are investigated theoretically within the nearest neighbor tight-binding method. The piezoelectric effect is also taken into account. The empirical rule has been used in the strained band-structure calculation. The results show that the excitonic transition energies are anisotropic in the c-plane in a high electronic concentration system and have a 60 degrees periodicity, which is in agreement with experiment. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3001937]

Resonant Enhanced Wave Filter and Waveguide via Surface Plasmons

The authors present an analysis of plasmonic wave filter and curved waveguide, simulated using a 2-D finite-difference time-domain technique. With different dielectric materials or surface structures located on the interface of the metal/dielectric, the resonant enhanced wave filter can divide light waves of different wavelengths and guide them with low losses. And the straight or curved waveguide can confine and guide light waves in a subwavelength scale. Within the 20 mu m simulation region, it is found that the intensity of the guided light at the interface is roughly four times the peak intensity of the incident light.

Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN

Using the effective-mass Hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the transition energies and optical properties in the R-plane ([1012]-oriented plane) GaN. The results show that (1) the transition energies decrease with the biaxial strains changing from -0.5 to 0.5%; and (2) giant optical anisotropy appears in the R-plane which is significantly affected by the biaxial strains. We clarify the relation between the strains and the polarization properties. Finally, we discuss the application of these properties to the R-plane GaN based devices. (c) 2009 The Japan Society of Applied Physics

Effects of the wave function localization in AlInGaN quaternary alloys

Using the first-principles band-structure method and the special quasirandom structures approach, the authors have investigated the band structure of random AlxInyGa1-x-yN quaternary alloys. They show that the wave functions of the band edge states are more localized on the InN sites. Consequently, the photoluminescence transition intensity in the alloy is higher than that in GaN. The valence band maximum state of the quaternary alloy is also higher than GaN with the same band gap, indicating that the alloy can be doped more easily as p-type. (c) 2007 American Institute of Physics.