PREPARATION AND PROPERTIES OF BACUO2.5 AND ITS RELATED OXIDES

The compound BaCuO2.5 Was obtained using BaO2 and CuO as starting materials, and its various properties were investigated. It belongs to the orthorhombic system with a = 8.55 angstrom, b = 10.56 angstrom, and c = 7.62 angstrom. The p-type semiconductor Ba

THE PHOTOELECTRIC PROPERTIES OF THIN-FILMS OF RARE-EARTH MONOPHOSPHIDES

The optical, electrical and photoelectric properties of rare earth monophosphides (LnP, Ln = La, Nd, Sm, Y, Dy and Yb) have been studied in thin films. The films exhibit semiconducting behaviour with energy gaps of 1.0-1.46 eV and n-type electrical conduction. Their resistivities are 10(-2) OMEGA-cm with corresponding Hall mobilities of 8.5-400 cm2 V-1 s-1. The films are deposited on a p-type silicon substrate in vacuum. Voltage-current characteristic measurements show that a p-n junction has been formed between LnP and silicon. Spectral sensitivity and a photovoltaic effect have been observed in LnP-Si junctions. They may be useful photoelectric materials.

An organic-inorganic vanadium oxide with one-dimensional ladder-type structure: hydrothermal synthesis, structure and characterization of [V4O10(o-phen)(2)]

A novel organic-inorganic hybrid vanadium oxide [V4O10(o-phen)(2)], involving all vanadium atoms present in +5 oxidation, has been hydrothermally synthesized and characterized by elemental analysis, IR, UV-vis, ESR, XPS spectra and TG-DTA thermal analysis. The single-crystal X-ray diffraction shows that the red-brown crystal is formed in the triclinic system, space group P (1) over bar, a = 9.782(2), b = 6.5124(14), c = 19.765(4) Angstrom, alpha = 89.94(2)degrees, beta = 100.66(2)degrees, gamma = 89.86(2)degrees. The title compound exhibits an infinite one-dimensional ladder-type tetravanadate skeleton with organonitrogen donors of o-phenanthroline ligands coordinated directly to the vanadium oxide framework.

Numerical analysis and comparison of three metal-oxide-type super-resolution near field structures

Based on the Fresnel-Kirchkoff diffraction theory, we build up a Gaussian diffraction model of metal-oxide-type super-resolution near field structure (super-RENS), which can describe far field optical properties. The spectral contrast induced by refractive index and the structural changes in AgOx, PtOx and PdOx thin films, which are the key functional layers in super-RENS, are studied by using this model. Comparison results indicate that the spectral contrast intensively on laser-induced distribution and change of the refractive index in the metal-oxide films. The readout mechanism of the metal-oxide-type super-RENS optical disc is further clarified. This Gaussian diffraction model can be used as a simple and effective method for choosing proper active materials in super-RENS.

Structural Integration of Tellurium Oxide into Mixed-Network-Former Glasses: Connectivity Distribution in the System NaPO3–TeO2

FSodium phosphate tellurite glasses in the system (NaPO3)(x)(TeO2)(1-x) were prepared and structurally characterized by thermal analysis, vibrational spectroscopy, X-ray photoelectron spectroscopy (XPS) and a variety of complementary solid-state nuclear magnetic resonance (NMR) techniques. Unlike the situation in other mixed-network-former glasses, the interaction between the two network formers tellurium oxide and phosphorus oxide produces no new structural units, and no sharing of the network modifier Na2O takes place. The glass structure can be regarded as a network of interlinked metaphosphate-type P(2) tetrahedral and TeO4/2 antiprismotic units. The combined interpretation of the O 1s XPS data and the P-31 solid-state NMR spectra presents clear quantitative evidence for a nonstatistical connectivity distribution. Rather the formation of homootomic P-O-P and Te-O-Te linkages is favored over mixed P-O-Te connectivities. As a consequence of this chemical segregation effect, the spatial sodium distribution is not random, as also indicated by a detailed analysis of P-31/No-23 rotational echo double-resonance (REDOR) experiments. ACHTUNGTRENUNG(TeO2)1 x were prepared and structurally characterized by thermal analysis,vibrat ional spectroscopy,X-ray photoelectron spectroscopy (XPS) and a variety of complementary solid-state nuclear magnetic resonance (NMR) techniques. Unlike the situation in other mixed-network-former glasses,the interaction between the two network formers tellurium oxide and phosphorus oxide produces no new structural units,and no sharing of the network modifier Na2O takes place. The glass structure can be regarded as a network of interlinked metaphosphate-type P(2) tetrahedral and TeO4/2 antiprismatic units. The combined interpretation of the O 1s XPS data and the 31P solid-state NMR spectra presents clear quantitative evidence for a nonstatistical connectivity distribution. Rather,the formation of homoatomic P O P and Te O Te linkages is favored over mixed P O Te connectivities. As a consequence of this chemical segregation effect,the spatial sodium distribution is not random,as also indicated by a detailed analysis of 31P/23Na rotational echo double-resonance (REDOR) experiments.

Investigation of the spectroscopic properties of Yb3+-doped yttrium lanthanum oxide transparent ceramic

Spectroscopic properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic were studied. Two main absorption peaks of the specimen are centered at 940 and 970 nm, which are suitable for InGaAs laser diode pumping. The main emission peaks were located at 1032 and 1075 nm with larger emission cross-section and longer fluorescence lifetime than those of Yb:Y2O3. These properties of (Y0.9-xLa0.1Ybx)(2)O-3 transparent ceramic are favorable to achieve high efficiency and high power laser output. (c) 2007 Elsevier B.V. All rights reserved.

Cooperative up-conversion luminescence of ytterbium doped yttrium lanthanum oxide transparent ceramic

The up-conversion luminescence of Yb3+-doped yttriurn lanthanum oxide transparent ceramic was investigated. It was ascribed to cooperative luminescence originated from the coupled states of the Yb3+ ion pairs. The proper doping of La2O3 can remove the cooperative luminescence of Yb3+ ion. But excessive La2O3 (at least 10 at.%) the cooperative up-conversion of Yb3+:Y2O3 is obtained again, and the intensity of up-conversion luminescence strengthens with the increase of La2O3 content. (c) 2007 Elsevier B.V. All rights reserved.

Fabrication and spectral properties of Nd3+-doped yttrium lanthanum oxide transparent ceramics

Transparent 1 at% Nd3+:Y1.9La0.1O3 ceramics were fabricated with nanopowders prepared by carbonate coprecipitation method. The powder compacts were sintered in H-2 atmosphere at 1550 degrees C for 30 h. The Nd3+:Y1.9La0.1O3 ceramics display uniform grains of about 50 mu m and high transparency. The highest transmittance of the ceramics reaches 67%. The strongest absorption peak is in the wavelength of 820 nm with absorption cross section of 2.48 x 10(-20) cm(2). The absorption is still high at LD wavelength 806 nm with absorption cross section of 1.78 x 10(-20) cm(2) and broad full width at half maximum (FWHM) of about 6.3 nm. The strongest emission peak was centered at 1078 nm with large stimulated emission cross section of 9.63 x 10(-20) cm(2) and broad FWHM of about 7.8 nm. The broad absorption and emission bandwidth of Nd3+:y(1.9)La(0.1)O(3) transparent ceramics are favorable to achieve the miniaturized LD pumping apparatus and ultrashort modelocked pulse laser output, respectively. (c) 2007 Elsevier B.V. All rights reserved.

Luminescence behavior of Yb(3+)heavy-doped yttrium lanthanum oxide transparent ceramics

Yb3+ heavy-doped yttrium lanthanum oxide transparent ceramics were fabricated and their spectroscopic properties were investigated. The absorption bands of (YbxY0.9-xLa0.1)(2)O-3 (x = 0.05-0.15) ceramics are broad at wavelength of 900-1000 nm. The absorption cross-sections centered at 974 nm and the emission cross-sections at 1031 nm of Yb3+ ion are 0.89-1.12 x 10(-20) cm(2) and 1.05 x 10(-20) cm(2) respectively. The up-conversion luminescence intensity of Yb3+-doped yttrium lanthanum oxide ceramics increased firstly, then decreased with the increase of Yb3+ ion content. (C) 2008 Elsevier B.V. All rights reserved.

Anti Human Immunodeficiency Virus Type 1 (HIV-1) Agents 4. Discovery of 5,5 '-(p-Phenylenebisazo)-8-hydroxyquinoline Sulfonates as New HIV-1 Inhibitors in Vitro

To search for compounds with superior anti-human immunodeficiency virus type 1 (HIV-1) activity, ten 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline sulfonates (4a-j) were synthesized and preliminarily evaluated as HIV-1 inhibitors in vitro for the first time. Some compounds demonstrated anti-HIV-1 activity, especially 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-ethylbenzenesulfonate (4g) and 5,5'-(p-phenylenebisazo)-8-hydroxyquinoline p-chlorobenzenesulfonate (41) showed the more potent anti-HIV-1 activity with 50% effective concentration (EC50) values of 2.59 and 4.01 mu g/ml, and therapeutic index (TI) values of 31.77 and 24.51, respectively.

XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells

Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.

Electroluminescence afterglow from indium tin oxide/Si-rich SiO2/p-Si structure

Indium tin oxide/Si-rich SiO2/p-Si structured devices are fabricated to study the electroluminescence (EL) of the Si-rich SiO2 (SRO) material. The obvious peaks at similar to 1050nm and similar to 1260nm in the EL are ascribed to localized state transitions of amorphous Si (alpha-Si) clusters. The EL afterglow associated with alpha-Si clusters is observed from this structure at room temperature, while the afterglow is absent in the case of optical pumping. It is believed that carrier-induced defects act as trap centres in the alpha-Si clusters, resulting in the EL afterglow. The phenomenon of the EL afterglow indicates the limits of EL performance and electrical modulation of the SRO material with a larger fraction of alpha-Si clusters.

Aluminium doping induced enhancement of p-d coupling in ZnO

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and 0 K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.