Deformation behaviour of electrodeposited nanocrystalline Ni with broad grain size distribution

In the present work, nanocrystalline Ni (nc-Ni) with a broad grain size distribution (BGSD) of 5-120 nm and an average grain size of 27.2 nm was prepared. The BGSD nc-Ni sample shows a similar strength and good ductility in comparison with electrodeposited nc-Ni with a narrow grain size distribution. The intracrystalline dislocation network was observed in the post-deformed microstructure confirming the conventional intracrystalline dislocation sliding mechanism in BGSD nc-Ni. The uniaxial tensile loading-unloading-loading deformation shows BGSD nc-Ni has the capability to store dislocations in the grain interior, which is very limited compared with that of coarse grained metals. For BGSD nc-Ni, the strain rate sensitivity of flow stress m enhances with decreasing strain rate. At the strain rate of 5 x 10(-6) s(-1), m was estimated to be 0.055. At the corresponding strain rate, the enhanced ductility along with the decreased strength was achievable, indicating activation of other deformation mechanisms, e. g. grain boundary sliding or diffusion.

Mechanical Behavior of Nanometer Ni by Simulating Nanoindentation

An indentation simulation of the crystal Ni is carried out by a molecular dynamics technique (MD) to study the mechanical behavior at nanometer scales. Indenter tips with both sphere shape and conical shape with 60 cone angle are used, and simulation samples with different crystal orientations are adopted. Some defects such as dislocations and point defects are observed. It is found that nucleated defects (dislocations, amorphous atoms) are from the local region near the pin tip or the sample surface. The temperature distribution of the local region is analyzed and it can explain our MD simulation results.

Mechanical Behavior of Nanometer Ni by MD Simulation

The indention simulation of the crystal Ni is carried out by molecular dynamics technique (MD) to study the mechanical behavior at nanometer scales, the indenter tips with sphere shape is used. Some defects such as dislocations, point defects are observed. It is found that defects (dislocations, amorphous) nucleated is from local region near the pin tip or the sample surface. The temperature distribution of local region is analyzed and it can explain our MD simulation result.

快重离子辐照引起Ni/SiO2界面原子混合及相变研究

Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012,5×1012 Xe/cm2 and 853 MeV Pb ions to 5×1011 Pb/cm2,respectively.These samples were analyzed using Rutherford Backscattering Spectrometry(RBS) and X-ray diffraction spectroscopy(XRD),from which the intermixing and phase change were investigated.The obtained results show that both Xe-and Pb-ions could induce diffusion of Ni atoms to SiO2 substrates and result in intermixing of Ni with SiO2.Furthermore,1.0×1012 Xe/cm2 irradiat...中文摘要：在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和NiO相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。

类钴氙离子入射Ni表面激发的红外光谱线和X射线谱

当高电荷态类钴氙离子(cobaltlike-Xe,Xe27+)入射金属Ni表面过程中,共振电子俘获释放势能完成中性化,形成多激发态的Xe原子,其外壳层电子退激辐射红外光谱线.入射离子特殊的势能释放方式、离子动能和金属表面引起离子增益的能量在极短的时间(飞秒量级)沉积靶平方纳米尺度的空间范围,引起靶表面原子激发和电离,形成复杂组态之间的跃迁,特别是偶极禁戒跃迁(电四极跃迁、磁偶极跃)和X射线发射.单离子X射线产额随入射离子的动能增加而增加.

快重离子辐照引起Ni/SiO_2界面原子混合及相变研究

在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/Si O2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和Ni O相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。

~(129)Xe~(30+)轰击Ni表面激发靶原子偶极跃迁和禁戒(M1和E2)跃迁的特征光谱线

报道了用高电荷态离子1 2 9Xe30 + (15 0keV)轰击金属Ni表面 ,激发的 2 0 0— 10 0 0nmNiⅠ和NiⅡ的特征光谱线的实验结果 .实验结果表明 :用电荷态足够高的离子作光谱激发源 ,无需很强的束流强度 (nA量级 ) ,便可有效地产生原子和离子的复杂组态间跃迁所形成的可见光波段的特征谱线 ,特别是NiⅠ和NiⅡ偶极禁戒的电四极跃迁E2和磁偶极跃迁M1的特征光谱线 .通过分析发现 ,在禁戒跃迁的谱线中 ,有些是电子组态相同而原子态不同的偶极禁戒跃迁光谱线而且NiⅡ的 6 84 84nm谱线较强

~(40)Ca+~(58)Fe,~(58)Ni反应中的径向膨胀流研究

利用同位旋相关的Boltzmann Langevin方程研究了40 Ca + 5 8Fe和40 Ca +5 8Ni两个反应系统在 53 ,1 0 0 ,1 50和 2 0 0MeV/u入射能量下对心碰撞的径向膨胀流 .发现对于丰中子系统40 Ca + 5 8Fe的径向膨胀流系统性地小于稳定系统40 Ca+ 5 8Ni的径向膨胀流 .在假定轰击能量与反应体系的压缩密度呈抛物线关系时 ,能够解释入射能量和径向膨胀流之间呈现的直线关系 .提取了出现径向膨胀流的轰击能量阈值 ,发现对丰中子系统40 Ca + 5 8Fe得到的能量阈值小于稳定系统40 Ca+ 5 8Ni所得到的能量阈值

25MeV/u ~(40)Ar+~(115)In,~(58)Ni,~(27)Al反应中前中角区碎片角分布和元素Z分布

测量了 ２５ＭｅＶ／ｕ４０　Ａｒ＋１１５　Ｉｎ，５８　Ｎｉ，２７　Ａ１反应前中角区出射碎片的角分布和 元素 Ｚ分布．用改进的量子分子动力学（ＭＱＭＤ）模型研究了碎片的角分布和 Ｚ 分布．理论计算值和实验值整体上符合得很好，但在前角区，ＭＱＭＤ模型低估 了碎片的产额，在中角区对于Ｚ接近弹核的碎片，理论计算值比实验值偏高．碎 片产物的角分布和Ｚ分布还与统计蒸发模型ＧＥＭＩＮＩ进行了比较，结果表明，在 前角区平衡蒸发成份所占的比例很小，中角区所占的比例有所增加，但仍然是较 小的比例．同时发现平衡蒸发成份随着出射碎片核电荷数Ｚ的减小而逐渐减 少．

Relativistic Distorted-Wave Collision Strengths of Ni-, Cu- and Zn-like Au Ions

Excitation energies and electron impact excitation strengths from the ground states of Ni-, Cu- and Zn-like Au ions are calculated. The collision strengths are computed by a 213-levels expansion for the Ni- like Au ion, 405-levels expansion for the Cu-like Au ion and 229-levels expansion for the Zn-like Au ion. Configuration interactions are taken into account for all levels included. The target state wavefunctions are calculated by using the Grasp92 code. The continuum orbits are computed in the distorted-wave approximation, in which the direct and exchange potentials among all the electrons are included. Excellent agreement is found when the results are compared with previous calculations and recent measurements.